MJD74C [MOTOROLA]
SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS; 硅功率晶体管6安培100 VOLTS20沃茨
| 型号： | MJD74C |
| 厂家： | 
MOTOROLA |
| 描述： | SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJD41C/D
SEMICONDUCTOR TECHNICAL DATA
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
SILICON
POWER TRANSISTORS
6 AMPERES
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
100 VOLTS
20 WATTS
Monolithic Construction With Built–in Base–Emitter Resistors
MAXIMUM RATINGS
MJD41C
MJD42C
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
100
100
5
CASE 369A–13
V
CB
V
EB
I
C
Collector Current — Continuous
Peak
6
10
Base Current
I
B
2
Adc
CASE 369–07
P
D
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
20
Watts
W/ C
0.16
P
D
Total Power Dissipation* @ T = 25 C
A
Derate above 25 C
1.75
Watts
W/ C
0.014
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
T , T
–65 to +150
C
Operating and Storage Junction
Temperature Range
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
6.25
71.4
Unit
C/W
C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
R
R
θJC
θJA
* These ratings are applicable when surface mounted on the minimum pad size recommended.
inches
mm
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
100
—
—
50
10
0.5
Vdc
µAdc
µAdc
mAdc
Collector–Emitter Sustaining Voltage (1)
(I = 30 mAdc, I = 0)
CEO(sus)
C
B
I
Collector Cutoff Current
(V = 60 Vdc, I = 0)
CEO
CE
Collector Cutoff Current
(V = 100 Vdc, V
B
I
—
CES
= 0)
CE EB
I
—
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
EBO
BE
C
ON CHARACTERISTICS (1)
h
FE
—
DC Current Gain
(I = 0.3 Adc, V
= 4 Vdc)
= 4 Vdc)
30
15
—
C
CE
(I = 3 Adc, V
75
C
CE
V
—
1.5
2
Vdc
Vdc
Collector–Emitter Saturation Voltage
(I = 6 Adc, I = 600 mAdc)
CE(sat)
C
B
V
—
Base–Emitter On Voltage
(I = 6 Adc, V = 4 Vdc)
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
3
—
—
MHz
—
Current Gain — Bandwidth Product (2)
T
(I = 500 mAdc, V
C CE
= 10 Vdc, f = 1 MHz)
test
h
20
Small–Signal Current Gain
(I = 0.5 Adc, V = 10 Vdc, f = 1 kHz)
fe
C
CE
(1) Pulse Test: Pulse Width
(2) f = h • f
300 µs, Duty Cycle
2%.
.
T
fe test
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
T
T
C
V
A
CC
+30 V
2.5 25
R
C
2
20
25 µs
SCOPE
+11 V
0
R
B
1.5 15
T
C
D
51
1
–9 V
T
SURFACE MOUNT
1
10
A
t , t
≤
10 ns
r
f
–4 V
DUTY CYCLE = 1%
0.5
0
5
0
R
and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
D
MUST BE FAST RECOVERY TYPE, e.g.:
1
MSB5300 USED ABOVE I
≈
100 mA
B
MSD6100 USED BELOW I
≈ 100 mA
25
50
75
100
125
150
B
REVERSE ALL POLARITIES FOR PNP.
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
2
1
500
T
= 25°C
J
300
200
V
= 2 V
CE
V
I
= 30 V
CC
/I = 10
T
= 150°C
J
C B
0.7
0.5
100
70
25°C
0.3
0.2
t
r
50
30
20
0.1
0.07
–55°C
t
@ V
≈
5 V
d
BE(off)
0.05
10
7
5
0.03
0.02
0.06
0.2
0.3 0.4 0.6
1
2
4
6
0.06
0.2
0.4 0.6
1
2
4
6
0.1
0.1
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 3. DC Current Gain
Figure 4. Turn–On Time
5
2
1.6
1.2
0.8
T
V
= 25°C
J
T
= 25°C
3
2
J
= 30 V
CC
/I = 10
I
C B
t
I
= I
s
B1 B2
1
0.7
0.5
V
@ I /I = 10
C B
CE(sat)
0.3
0.2
V
@ V = 4 V
CE
BE
t
f
0.4
0
0.1
0.07
0.05
V
@ I /I = 10
C B
BE(sat)
0.06
0.2 0.3 0.4
0.6
1
2
3
4
6
0.06
0.2
0.4 0.6
1
2
4
6
0.1
0.1
I
, COLLECTOR CURRENT (AMP)
C
I
, COLLECTOR CURRENT (AMP)
C
Figure 5. “On” Voltages
Figure 6. Turn–Off Time
3
Motorola Bipolar Power Transistor Device Data
2
300
200
T
= 25°C
T
= 25°C
J
J
1.6
I
= 1 A
2.5 A
5 A
C
C
C
ib
1.2
0.8
100
70
ob
50
0.4
0
30
0.5
1
2
3
5
10
20
30
50
10
20 30
50
100
200 300
500
1000
V
, REVERSE VOLTAGE (VOLTS)
I
, BASE CURRENT (mA)
R
B
Figure 8. Capacitance
Figure 7. Collector Saturation Region
1
0.7
D = 0.5
0.2
0.5
0.3
0.2
P
(pk)
R
R
= r(t) R
θ
θ
θ
JC(t)
= 6.25
JC
0.1
°
C/W MAX
JC
0.1
0.07
0.05
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.02
READ TIME AT t
1
t
2
T
– T = P
θ
J(pk)
C
(pk) JC(t)
0.03
0.02
DUTY CYCLE, D = t /t
1 2
0.01
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300 500
1000
t, TIME (ms)
Figure 9. Thermal Response
10
5
3
2
100
µ
s
500 µs
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
1 ms
dc
down. Safe operating area curves indicate I – V
limits of
C
CE
5 ms
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1
0.5
0.3
WIRE BOND LIMIT
THERMAL LIMIT
The data of Figure 10 is based on T
= 150 C; T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
0.1
CEO
J(pk)
may be calculated from the data in Fig-
0.05
0.03
150 C. T
J(pk)
T
T
= 25°C SINGLE PULSE
C
J
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
= 150
°C
MJD41C, 42C
0.01
1
2
3
5
7
10
20
30
50 70 100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 10. Maximum Forward Bias
Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
MILLIMETERS
E
V
DIM
A
B
C
D
E
MIN
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
0.235
0.250
0.086
0.027
0.033
0.037
4
2
Z
A
K
S
F
1
3
G
H
J
K
L
0.180 BSC
4.58 BSC
U
0.034
0.018
0.102
0.040
0.023
0.114
0.87
0.46
2.60
1.01
0.58
2.89
0.090 BSC
2.29 BSC
F
J
R
S
U
V
0.175
0.020
0.020
0.030
0.138
0.215
0.050
–––
0.050
–––
4.45
0.51
0.51
0.77
3.51
5.46
1.27
–––
1.27
–––
L
H
D 2 PL
Z
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369A–13
ISSUE W
C
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
E
R
INCHES
MILLIMETERS
4
DIM
A
B
C
D
E
MIN
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
MAX
6.35
6.73
2.38
0.88
1.01
1.19
0.235
0.250
0.086
0.027
0.033
0.037
A
K
1
2
3
S
F
–T–
SEATING
PLANE
0.090 BSC
2.29 BSC
G
H
J
K
R
S
0.034
0.018
0.350
0.175
0.050
0.030
0.040
0.023
0.380
0.215
0.090
0.050
0.87
0.46
8.89
4.45
1.27
0.77
1.01
0.58
9.65
5.46
2.28
1.27
J
F
V
H
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
0.13 (0.005)
T
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369–07
ISSUE K
5
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MJD41C/D
◊
相关型号：
MJD907
Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
FAIRCHILD
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