MJF18006_技术文档

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SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The MJE/MJF18006 have an applications specific state–of–the–art die designed

for use in 220 V line–operated Switchmode Power supplies and electronic light

ballasts. These high voltage/high speed transistors offer the following:

POWER TRANSISTOR

6.0 AMPERES

1000 VOLTS

40 and 100 WATTS

•

Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain h

— Fast Switching

FE

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

Tight Parametric Distributions are Consistent Lot–to–Lot

Two Package Choices: Standard TO–220 or Isolated TO–220

•

MJF18006, Case 221D, is UL Recognized at 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol MJE18006 MJF18006

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

V

450

1000

9.0

CEO

V

CES

EBO

CASE 221A–06

TO–220AB

MJE18006

V

Collector Current — Continuous

— Peak(1)

I

6.0

15

C

I

CM

Base Current — Continuous

— Peak(1)

I

4.0

8.0

Adc

B

I

BM

RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a

(for 1 sec, R.H. < 30%, Test No. 1 Per Fig. 22b

V

ISOL

—

4500

3500

1500

Volts

T

C

= 25 C)

Test No. 1 Per Fig. 22c

Total Device Dissipation

Derate above 25 C

(T = 25°C)

C

P

D

100

0.8

40

0.32

Watts

W/ C

Operating and Storage Temperature

T , T

J stg

–65 to 150

C

THERMAL CHARACTERISTICS

Rating

Symbol MJE18006 MJF18006

Unit

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

MJF18006

Thermal Resistance — Junction to Case

— Junction to Ambient

R

1.25

62.5

3.125

62.5

C/W

θJC

θJA

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

260

C

L

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

V

450

—

Vdc

µAdc

C

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

I

CEO

100

CE

CEO

B

Collector Cutoff Current (V

= Rated V

, V

= 0)

I

—

100

500

100

CES EB

CES

(T = 125 C)

C

Collector Cutoff Current (V

= 800 V, V

= 0)

(T = 125 C)

C

CE

EB

Emitter Cutoff Current (V

EB

= 9.0 Vdc, I = 0)

I

—

100

µAdc

C

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

1

ELECTRICAL CHARACTERISTICS — continued (T = 25 C unless otherwise specified)

C

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc)

V

—

0.83

0.94

1.2

1.3

Vdc

C

B

BE(sat)

Base–Emitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc)

C

B

Collector–Emitter Saturation Voltage

(I = 1.3 Adc, I = 0.13 Adc)

V

CE(sat)

0.6

0.65

0.7

—

0.25

0.27

0.35

0.4

C

B

(T = 125 C)

C

(I = 3.0 Adc, I = 0.6 Adc)

C

B

0.8

(T = 125 C)

C

DC Current Gain (I = 0.5 Adc, V

= 5.0 Vdc)

= 1.0 Vdc)

h

FE

14

—

6.0

5.0

11

—

32

10

8.0

17

22

34

—

C

CE

(T = 125 C)

C

DC Current Gain (I = 3.0 Adc, V

C

(T = 125 C)

C

DC Current Gain (I = 1.3 Adc, V

(T = 25 to 125 C)

C

10

DC Current Gain (I = 10 mAdc, V

= 5.0 Vdc)

C

CE

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (I = 0.5 Adc, V

= 10 Vdc, f = 1.0 MHz)

f

—

14

75

—

MHz

pF

C

CE

T

Output Capacitance (V

CB

= 10 Vdc, I = 0, f = 1.0 MHz)

C

120

1500

E

ob

Input Capacitance (V

EB

= 8.0 V)

C

1000

pF

ib

Dynamic Saturation Voltage:

V

—

5.5

12

—

Volts

CE(dsat)

1.0 µs

(I = 1.3 Adc

C

(T = 125°C)

C

I

= 130 mAdc

Determined 1.0 µs and

3.0 µs respectively after

B1

CC

—

3.0

7.0

—

V

= 300 V)

3.0 µs

1.0 µs

3.0 µs

(T = 125°C)

C

rising I reaches 90% of

B1

final I

B1

—

9.5

14.5

—

(see Figure 18)

(I = 3.0 Adc

(T = 125°C)

C

B1

CC

I

V

= 0.6 Adc

= 300 V)

—

2.0

7.5

—

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Resistive Load (D.C.

10%, Pulse Width = 20 µs)

Turn–On Time

(I = 3.0 Adc, I = 0.6 Adc,

t

on

—

90

100

180

—

ns

µs

ns

µs

C

B1

= 1.5 Adc, V

I

= 300 V)

(T = 125°C)

B2

CC

C

Turn–Off Time

t

off

—

1.7

2.1

2.5

—

(T = 125°C)

C

Turn–On Time

Turn–Off Time

(I = 1.3 Adc, I = 0.13 Adc,

t

on

—

200

130

300

—

C

B2

B1

= 0.65 Adc, V

I

= 300 V)

(T = 125°C)

C

CC

t

off

—

1.2

1.5

2.5

—

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Inductive Load (V

clamp

= 300 V, V

CC

= 15 V, L = 200 µH)

Fall Time

(I = 1.5 Adc, I = 0.13 Adc,

t

fi

—

100

120

180

—

ns

µs

ns

µs

ns

C

B1

I

= 0.65 Adc)

(T = 125°C)

C

B2

Storage Time

Crossover Time

Fall Time

t

si

—

1.5

1.9

2.5

—

(T = 125°C)

C

t

c

—

220

230

350

—

(T = 125°C)

C

(I = 3.0 Adc, I = 0.6 Adc,

t

fi

—

85

120

150

—

C

B1

= 1.5 Adc)

I

(T = 125°C)

C

B2

Storage Time

Crossover Time

t

si

—

2.15

2.75

3.2

—

(T = 125°C)

C

t

c

—

200

310

300

—

(T = 125°C)

C

2

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

100

T

= 125°C

V

= 5 V

T

= 125°C

J

V

= 1 V

CE

J

CE

T

= 25°C

T

= 25°C

J

T

= – 20°C

J

T

= – 20°C

J

10

1

0.01

1

0.01

0.1

1

10

0.1

I , COLLECTOR CURRENT (AMPS)

C

1

10

I

, COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

2

1.5

1

10

1

T

= 25°C

J

I

= 1 A

2 A

3 A

5 A

6 A

C

I

/I = 10

C B

0.1

0.5

0

I

/I = 5

C B

T

= 25°C

= 125°C

J

0.01

0.1

1

10

0.01

0.1

I COLLECTOR CURRENT (AMPS)

C

1

10

I

, BASE CURRENT (AMPS)

B

Figure 3. Collector Saturation Region

Figure 4. Collector–Emitter Saturation Voltage

1.3

1.2

1.1

1

10000

1000

T

= 25°C

J

f = 1 MHz

C

ib

0.9

0.8

0.7

0.6

100

10

1

C

ob

T

= 25°C

J

I

/I = 5

= 125°C

C B

J

0.5

0.4

/I = 10

C B

0.01

0.1

1

10

1

10

100

1000

I

, COLLECTOR CURRENT (AMPS)

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

C

CE

Figure 5. Base–Emitter Saturation Region

Figure 6. Capacitance

3

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(I

= I /2 for all switching)

B2

C

2000

1500

1000

4000

I

/I = 5

C B

I

V

= I /2

C

I

V

= I /2

C

B(off)

CC

B(off)

CC

T

= 125°C

T

= 25°C

= 125°C

J

3500

3000

2500

2000

1500

1000

= 300 V

PW = 20 µs

I /I = 10

C B

I

/I = 5

/I = 10

C B

T

= 25°C

I

J

C B

500

0

500

0

1

2

3

4

5

6

0

1

2

3

4

I , COLLECTOR CURRENT (AMPS)

C

5

6

I

, COLLECTOR CURRENT (AMPS)

C

Figure 7. Resistive Switching, t

Figure 8. Resistive Switching, t

off

on

3500

3000

2500

2000

1500

1000

5000

4500

4000

3500

I

V

L

= I /2

C

T

= 25

= 125

°

C

B(off)

CC

Z

C

I = I /2

B(off) C

J

I

/I = 5

C B

= 15 V

°C

V

L

= 15 V

CC

= 300 V

= 200 µH

= 300 V

Z

= 200 µH

C

3000

2500

I

= 1.3 A

C

2000

1500

1000

500

0

T

= 25°C

= 125°C

J

500

0

I

/I = 10

I

= 3 A

9

C B

C

0

1

2

3

4

5

6

3

4

5

6

7

8

10

11 12

13 14

15

I

COLLECTOR CURRENT (AMPS)

h

, FORCED GAIN

C

FE

Figure 9. Inductive Storage Time, t

Figure 10. Inductive Storage Time, t (h )

si FE

si

350

300

250

200

150

100

250

200

150

t

c

t

c

I

V

= I /2

C

B(off)

CC

Z

C

= 15 V

= 300 V

= 200 µH

t

fi

t

fi

L

I

= I /2

C

B(off)

CC

Z

C

100

50

V

L

= 15 V

50

0

T

= 25°C

= 125°C

= 300 V

T

= 25°C

J

T = 125°C

J

= 200

µH

0

1

2

3

4

5

6

0

1

2

3

4

5

6

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Inductive Switching, t and t

fi

Figure 12. Inductive Switching, t and t

fi

c

I /I = 5

C B

I /I = 10

C B

4

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(I

= I /2 for all switching)

B2

C

180

160

140

120

100

350

300

I

V

= I /2

C

B(off)

CC

Z

C

I

= 3 A

= 15 V

C

= 300 V

I

= 3 A

C

I

= I /2

C

L

= 200

µH

B(off)

CC

Z

C

250

200

150

V

L

= 15 V

= 300 V

= 200 µH

I

= 1.3 A

C

I

= 1.3 A

C

100

50

80

60

T

= 25°C

= 125°C

T

J

= 25°C

J

T

= 125°C

3

4

5

6

7

8

9

10 11

12

13 14

15

3

4

5

6

7

8

9

10 11

12

13

14

15

h

, FORCED GAIN

h

, FORCED GAIN

FE

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

GUARANTEED SAFE OPERATING AREA INFORMATION

7

100

10

1

DC (MJE18006)

T

I

≤ 125°C

C

/I

≥ 4

6

C B

5 ms

1 ms

10

µ

s

1 µs

L

= 500 µH

C

5

4

3

2

EXTENDED

SOA

DC (MJF18006)

0.1

– 5 V

1

0

V

= 0 V

–1, 5 V

800

BE(off)

0.01

10

100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000

0

200

400

600

1000

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe

Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

1,0

down. Safe operating area curves indicate I – V

limits of

C

CE

SECOND BREAKDOWN

DERATING

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

0,8

0,6

0,4

than the curves indicate. The data of Figure 15 is based on T

C

= 25°C; T

is variable depending on power level. Second

J(pk)

breakdown pulse limits are valid for duty cycles to 10% but

must be derated when T ≥ 25°C. Second breakdown

C

limitations do not derate the same as thermal limitations.

Allowable current at the voltages shown in Figure 15 may be

found at any case temperature by using the appropriate curve

THERMAL DERATING

0,2

0,0

on Figure 17. T

may be calculated from the data in Figure

J(pk)

20 and 21. At any case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown. For inductive

loads, high voltage and current must be sustained simulta-

neously during turn–off with the base–to–emitter junction

reverse–biased. The safe level is specified as a reverse–

biased safe operating area (Figure 16). This rating is verified

under clamped conditions so that the device is never

subjected to an avalanche mode.

20

40

60

80

100

120

C)

140

160

T

, CASE TEMPERATURE (

°

C

Figure 17. Forward Bias Power Derating

5

Motorola Bipolar Power Transistor Device Data

10

5

4

V

CE

90% I

I

C

9

8

7

6

5

C

t

fi

3

dyn 1 µs

t

si

2

dyn 3 µs

1

t

10% I

C

c

V

I

10% V

0

CLAMP

–1

–2

–3

–4

–5

4

90% I

B

90% I

B

1

B

3

2

1

0

1 µs

3 µs

I

B

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

TIME

Figure 18. Dynamic Saturation Voltage Measurements

Figure 19. Inductive Switching Measurements

+15 V

I

PEAK

C

100 µF

1

µ

F

MTP8P10

MUR105

MJE210

100

3 W

Ω

150

3 W

Ω

V

PEAK

CE

V

CE

MTP8P10

MPF930

R

B1

I

1

B

I

MPF930

+10 V

out

I

B

A

I

2

B

50

Ω

B2

V(BR)CEO(sus)

L = 10 mH

INDUCTIVE SWITCHING

RBSOA

L = 500

COMMON

MTP12N10

150

Ω

L = 200

µH

3 W

RB2 =

∞

RB2 = 0

500 µF

V

= 20 VOLTS

V

= 15 VOLTS

V

= 15 VOLTS

CC

(pk) = 100 mA

CC

RB1 SELECTED FOR

DESIRED I

CC

RB1 SELECTED

FOR DESIRED I

I

C

1 µF

1

B

–V

off

Table 1. Inductive Load Switching Drive Circuit

6

Motorola Bipolar Power Transistor Device Data

TYPICAL THERMAL RESPONSE

1

D = 0.5

0.2

0.1

P

R

(t) = r(t) R

θ

(pk)

θ

JC

°C/W MAX

0.1

= 1.25

0.05

0.02

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

t

1

t

2

T

– T = P

C

R

(t)

JC

J(pk)

(pk)

θ

SINGLE PULSE

DUTY CYCLE, D = t /t

1 2

0.01

0.1

1

10

100

1000

t, TIME (ms)

Figure 20. Typical Thermal Response (Z

(t)) for MJE18006

θJC

1

D = 0.5

0.2

0.1

P

R

(t) = r(t) R

θ

(pk)

θ

JC

°C/W MAX

0.1

= 3.12

0.05

0.02

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

t

1

READ TIME AT t

1

t

2

T

– T = P

R

(t)

JC

J(pk)

C

(pk)

θ

DUTY CYCLE, D = t /t

1 2

SINGLE PULSE

0.1

0.01

1

10

100

1000

10000

100000

t, TIME (ms)

Figure 21. Typical Thermal Response (Z

θJC

(t)) for MJF18006

7

Motorola Bipolar Power Transistor Device Data

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

MOUNTED

FULLY ISOLATED

PACKAGE

CLIP

0.107

″

MIN

0.107″ MIN

PACKAGE

LEADS

HEATSINK

0.110 MIN

HEATSINK

″

Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position

for Isolation Test Number 1 for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together

MOUNTING INFORMATION**

4–40 SCREW

CLIP

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

HEATSINK

NUT

Figure 23a. Screw–Mounted

Figure 23b. Clip–Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

.

torque of 6 to 8 in lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a

constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will

.

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affecting the pack-

age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10

.

in lbs of mounting torque under any mounting conditions.

**For more information about mounting power semiconductors see Application Note AN1040.

8

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

SEATING

PLANE

–T–

B

F

C

T

NOTES:

S

4

INCHES

MIN

MILLIMETERS

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

–––

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

A

K

Q

Z

1

2

3

H

U

L

R

V

T

U

V

J

G

D

Z

0.080

2.04

N

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A–06

TO–220AB

ISSUE Y

SEATING

PLANE

–T–

–B–

C

NOTES:

F

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

S

Q

H

U

INCHES

MILLIMETERS

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MIN

MAX

0.629

0.402

0.189

0.034

0.129

MIN

15.78

10.01

4.60

MAX

15.97

10.21

4.80

A

0.621

0.394

0.181

0.026

0.121

1

2 3

0.67

0.86

3.08

3.27

–Y–

K

0.100 BSC

2.54 BSC

0.123

0.018

0.500

0.045

0.129

0.025

0.562

0.060

3.13

0.46

3.27

0.64

12.70

1.14

14.27

1.52

G

N

J

0.200 BSC

5.08 BSC

R

0.126

0.107

0.096

0.259

0.134

0.111

0.104

0.267

3.21

2.72

2.44

6.58

3.40

2.81

2.64

6.78

L

D 3 PL

U

M

0.25 (0.010)

B

Y

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

CASE 221D–02

(ISOLATED TO–220 TYPE)

UL RECOGNIZED: FILE #E69369

ISSUE D

9

Motorola Bipolar Power Transistor Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

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10

Motorola Bipolar Power Transistor Device Data

MJE18006/D

◊


型号：	MJF18006
厂家：	MOTOROLA
描述：	POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS 功率晶体管6.0安培1000伏特40和100瓦晶体晶体管
文件：	总10页 (文件大小：417K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MJF18006 [MOTOROLA]

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