MMBFJ309LT1 [MOTOROLA]
JFET VHF/UHF Amplifier Transistor; JFET VHF / UHF放大器晶体管
| 型号： | MMBFJ309LT1 |
| 厂家： | 
MOTOROLA |
| 描述： | JFET VHF/UHF Amplifier Transistor |
| 文件： | 总6页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MMBFJ309LT1/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel
2 SOURCE
3
GATE
1 DRAIN
3
1
MAXIMUM RATINGS
2
Rating
Drain–Source Voltage
Symbol
Value
Unit
Vdc
V
V
25
25
10
DS
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
Gate–Source Voltage
Vdc
GS
Gate Current
I
G
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
(1)
Total Device Dissipation FR–5 Board
P
225
mW
D
T
A
= 25°C
Derate above 25°C
1.8
556
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
JA
T , T
J stg
–55 to +150
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (I = –1.0 µAdc, V
= 0)
V
(BR)GSS
–25
—
—
Vdc
G
DS
Gate Reverse Current (V
Gate Reverse Current (V
= –15 Vdc)
= –15 Vdc, T = 125°C)
I
—
—
—
—
–1.0
–1.0
nAdc
µAdc
GS
GS
GSS
A
Gate Source Cutoff Voltage
(V = 10 Vdc, I = 1.0 nAdc)
MMBFJ309
MMBFJ310
V
–1.0
–2.0
—
—
–4.0
–6.5
Vdc
GS(off)
DS
D
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
MMBFJ309
MMBFJ310
I
12
24
—
—
30
60
mAdc
Vdc
DSS
(V
DS
= 10 Vdc, V
= 0)
GS
Gate–Source Forward Voltage (I = 1.0 mAdc, V
G
= 0)
V
—
—
1.0
DS
GS(f)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (V
DS
= 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
|Y
|
8.0
—
—
—
—
—
—
—
—
10
18
250
5.0
2.5
—
mmhos
µmhos
pF
D
fs
Output Admittance (V
= 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
|y
C
|
DS
D
os
Input Capacitance (V
= –10 Vdc, V
= 0 Vdc, f = 1.0 MHz)
GS
DS
= –10 Vdc, V
iss
rss
Reverse Transfer Capacitance (V
= 0 Vdc, f = 1.0 MHz)
DS
C
pF
GS
Equivalent Short–Circuit Input Noise Voltage
(V = 10 Vdc, I = 10 mAdc, f = 100 Hz)
e
n
nV Hz
DS
1. FR–5 = 1.0
D
0.75 0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Motorola, Inc. 1997
50
Ω
U310
50
Ω
SOURCE
LOAD
C3
L2
L2
S
P
L1
C1
C2
C4
C5
C6
C7
1.0 k
RFC
+V
DD
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 µH Miller #9230–30.
L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
P
L2 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
S
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
70
35
70
60
60
50
40
30
20
10
0
30
25
20
15
10
5.0
0
T
= –55°C
V
= 10 V
A
DS
f = 1.0 MHz
V
= 10 V
T = –55°C
A
DS
+25°C
50
40
30
20
10
+25°C
I
DSS
+25
°
C
+150°C
+25°C
+150
°
C
–55°C
+25°C
+150°C
–55°C
+150
°C
–1.0
0
–5.0
–4.0
–3.0
–2.0
1.0
0
5.0
4.0
3.0
2.0
I
– V , GATE–SOURCE VOLTAGE (VOLTS)
D
GS
V
, GATE–SOURCE VOLTAGE (VOLTS)
GS
I
– V , GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
DSS
GS
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
Figure 3. Forward Transconductance
versus Gate–Source Voltage
100 k
10 k
10
120
1.0 k
100
R
DS
Y
fs
96
72
48
24
0
Y
fs
7.0
4.0
C
gs
V
V
= –2.3 V =
= –5.7 V =
10
1.0 k
100
GS(off)
GS(off)
Y
os
C
gd
1.0
0
1.0
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
10
9.0
8.0
V
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
I
, DRAIN CURRENT (mA)
, GATE SOURCE VOLTAGE (VOLTS)
D
GS
Figure 4. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source Voltage
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
|S |, |S
21
|
|S |, |S
12
|
22
11
0.85 0.45
0.79 0.39
0.73 0.33
0.67 0.27
0.61 0.21
0.55 0.15
0.060 1.00
0.048 0.98
0.036 0.96
0.024 0.94
0.012 0.92
0.90
30
24
18
12
6.0
0
3.0
2.4
1.8
1.2
0.6
S
22
V
= 10 V
DS
= 10 mA
I
T
D
S
21
= 25°C
A
Y
11
V
= 10 V
DS
= 10 mA
I
T
D
= 25°C
A
Y
Y
21
S
11
22
S
12
Y
12
100
200
300
500
700 1000
100
200
300
500
700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. Common–Gate Y Parameter
Magnitude versus Frequency
Figure 7. Common–Gate S Parameter
Magnitude versus Frequency
θ
,
θ
θ
, θ
θ
,
θ
θ
, θ
21 11
12 22
11 12
21 22
180
170
160
150
140
130
°
°
°
°
°
°
50°
40°
30°
20°
10°
0°
–20
–20
–40
–60
–80
°
°
°
°
°
87°
86°
85°
84°
83°
82°
–20
°
°
°
°
°
°
120
100
80
°
°
°
°
°
0
θ
11
θ
22
θ
21
–40
θ
–20
–40
–60
–80
°
°
°
°
22
θ
21
–60
–100
–120
–140
–160
–180
–200
°
°
°
°
°
°
–80
60
θ
21
θ
12
θ
θ
12
11
V
I
= 10 V
V
I
= 10 V
DS
= 10 mA
–100
–120
40
DS
= 10 mA
θ
11
D
D
T
= 25°C
T
= 25°C
A
A
–100
700 1000
°
20
°
100
200
300
500
700 1000
100
200
300
500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 8. Common–Gate Y Parameter
Phase–Angle versus Frequency
Figure 9. S Parameter Phase–Angle
versus Frequency
8.0
24
21
18
15
12
9.0
6.0
3.0
0
7.0
6.0
26
22
18
14
V
= 20 V
DD
f = 450 MHz
BW 10 MHz
CIRCUIT IN FIGURE 1
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
≈
5.0
4.0
G
pg
V
= 10 V
G
DS
= 10 mA
pg
I
T
D
A
NF
= 25°C
3.0
2.0
CIRCUIT IN FIGURE 1
10
NF
6.0
2.0
1.0
0
4.0 6.0
8.0
10
12
14
16
18
20
22
24
50
100
200 300
500 700 1000
I
, DRAIN CURRENT (mA)
f, FREQUENCY (MHz)
D
Figure 10. Noise Figure and
Power Gain versus Drain Current
Figure 11. Noise Figure and Power Gain
versus Frequency
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
C1
C6
U310
D
B
(3 dB) – 36.5 MHz
– 10 mAdc
– 20 Vdc
S
W
I
V
D
DS
G
C4
C3
L1
L3
INPUT
= 50
OUTPUT
= 50 Ω
Device case grounded
R
Ω
R
IM test tones – f1 = 449.5 MHz, f2 = 450.5 MHz
S
L
C2
L2
C5
C1 = 1–10 pF Johanson Air variable trimmer.
C2, C5 = 100 pF feed thru button capacitor.
C3, C4, C6 = 0.5–6 pF Johanson Air variable
trimmer.
L4
L1 = 1/8″ x 1/32″ x 1–5/8″ copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8″ x 1/32″ x 1–7/8″ copper bar.
V
V
D
S
SHIELD
Figure 12. 450 MHz IMD Evaluation Amplifier
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and
C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is
29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For
example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40
U310 JFET
V = 20 Vdc
3RD ORDER INTERCEPT POINT
+20
0
DS
= 10 mAdc
I
D
F1 = 449.5 MHz
F2 = 450.5 MHz
–20
–40
–60
–80
–100
–120
FUNDAMENTAL OUTPUT
Example of intercept point plot use:
Assume two in–band signals of –20 dBm at the amplifier input.
They will result in a 3rd order IMD signal at the output of
–90 dBm. Also, each signal level at the output will be
–11 dBm, showing an amplifier gain of 9.0 dB and an
intermodulation ratio (IMR) capability of 79 dB. The gain and
IMR values apply only for signal levels below comparison.
3RD ORDER IMD OUTPUT
–60
–40
–20
0
+20
–120
–100
–80
INPUT POWER PER TONE (dBm)
Figure 13. Two Tone 3rd Order Intercept Point
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SOT–23 package,
P
can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
STYLE 10:
S
B
PIN 1. DRAIN
2. SOURCE
3. GATE
1
2
INCHES
MIN MAX
MILLIMETERS
DIM
A
B
C
D
G
H
J
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
V
G
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
C
K
L
S
H
J
D
V
K
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Mfax is a trademark of Motorola, Inc.
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MMBFJ309LT1/D
◊
相关型号：
MMBFJ310D87Z
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN
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