MMPQ2222 [MOTOROLA]
Quad General Purpose Transistors; 四路通用晶体管
| 型号： | MMPQ2222 |
| 厂家： | 
MOTOROLA |
| 描述： | Quad General Purpose Transistors |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MMPQ2222/D
SEMICONDUCTOR TECHNICAL DATA
1
16
15
14
13
12
11
10
9
NPN Silicon
2
*Motorola Preferred Device
3
4
5
6
7
8
16
MAXIMUM RATINGS
1
Rating
Symbol
MMPQ2222 MMPQ2222A
Unit
Vdc
CASE 751B–05, STYLE 4
SO–16
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
30
60
40
75
V
CB
Vdc
V
EB
5.0
Vdc
Collector Current — Continuous
I
C
500
mAdc
Four
Each
Transistors
Transistor
Equal Power
Total Power Dissipation
P
D
Watts
@ T = 25°C
0.52
4.2
1.0
8.0
A
Derate above 25°C
mW/°C
Total Power Dissipation
P
Watts
D
@ T = 25°C
0.8
6.4
2.4
19.2
C
Derate above 25°C
mW/°C
°C
Operating and Storage
Junction Temperature Range
T , T
J stg
–55 to +150
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
(I = 10 mAdc, I = 0)
MMPQ2222
MMPQ2222A
V
V
V
30
40
—
—
—
—
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector–Base Breakdown Voltage
(I = 10 Adc, I = 0)
MMPQ2222
MMPQ2222A
60
75
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
5.0
—
—
—
—
—
Vdc
B
C
Collector Cutoff Current
I
nAdc
CBO
(V
CB
(V
CB
= 50 Vdc, I = 0)
MMPQ2222
MMPQ2222A
—
—
—
—
50
10
E
= 60 Vdc, I = 0)
E
Emitter Cutoff Current
(V = 3.0 Vdc, I = 0)
I
—
—
100
nAdc
EBO
EB
C
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
h
FE
—
(I = 100 A, V
= 10 V)
= 10 V)
= 10 V)
MMPQ2222A
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222A
35
50
75
—
—
—
—
—
—
—
—
—
—
—
—
—
—
300
—
—
C
C
CE
CE
CE
(I = 1.0 mA, V
(I = 10 mA, V
C
75
(I = 150 mA, V
= 10 V)
100
100
30
40
50
C
CE
(I = 300 mA, V
= 10 V)
= 10 V)
= 1.0 V)
C
CE
CE
CE
(I = 500 mA, V
C
(I = 150 mA, V
—
C
(1)
Collector–Emitter Saturation Voltage
V
V
Vdc
Vdc
CE(sat)
(I = 150 mAdc, I = 15 mAdc)
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
—
—
—
—
—
—
—
—
0.4
0.3
1.6
1.0
C
B
(I = 300 mAdc, I = 30 mAdc)
C
C
B
B
(I = 500 mAdc, I = 50 mAdc)
(1)
Base–Emitter Saturation Voltage
BE(sat)
(I = 150 mAdc, I = 15 mAdc)
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
—
—
—
—
—
—
—
—
1.3
1.2
2.6
2.0
C
B
(I = 300 mAdc, I = 30 mAdc)
C
C
B
B
(I = 500 mAdc, I = 50 mAdc)
DYNAMIC CHARACTERISTICS
(1)
Current–Gain — Bandwidth Product
(I = 20 mAdc, V
C CE
f
200
—
350
4.5
17
—
—
—
MHz
pF
T
= 20 Vdc, f = 100 MHz)
Output Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
ob
CB
Input Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
E
C
—
pF
ib
EB
C
SWITCHING CHARACTERISTICS
Turn–On Time
t
t
—
—
25
—
—
ns
ns
on
(V
CC
= 30 Vdc, V = –0.5 Vdc, I = 150 mAdc,
BE(off) C
I
= 15 mAdc)
B1
Turn–Off Time
(V
250
off
= 30 Vdc, I = 150 mAdc, I = I = 15 mAdc)
CC
C
B1 B2
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SO–16 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
SO–16
SO–16 POWER DISSIPATION
The power dissipation of the SO–16 is a function of the
SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SO–16 package,
P
can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 1.0 watts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
125°C/W
P
=
= 1.0 watts
D
The 125°C/W for the SO–16 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 1.0 watts. There are
other alternatives to achieving higher power dissipation from
the SO–16 package. Another alternative would be to use a
ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
–A–
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
16
1
9
8
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
–B–
P 8 PL
M
S
0.25 (0.010)
B
MILLIMETERS
INCHES
DIM
A
B
C
D
MIN
9.80
3.80
1.35
0.35
0.40
MAX
10.00
4.00
1.75
0.49
1.25
MIN
MAX
0.393
0.157
0.068
0.019
0.049
0.386
0.150
0.054
0.014
0.016
G
F
G
J
K
M
P
R
1.27 BSC
0.050 BSC
K
0.19
0.10
0
0.25
0.25
7
0.008
0.004
0
0.009
0.009
7
F
C
R X 45
5.80
0.25
6.20
0.50
0.229
0.010
0.244
0.019
–T–
SEATING
PLANE
STYLE 4:
D
16 PL
PIN 1. COLLECTOR, DYE #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. COLLECTOR, #3
6. COLLECTOR, #3
7. COLLECTOR, #4
8. COLLECTOR, #4
9. BASE, #4
J
M
M
S
S
0.25 (0.010)
T
B
A
10. EMITTER, #4
11. BASE, #3
12. EMITTER, #3
13. BASE, #2
14. EMITTER, #2
15. BASE, #1
CASE 751B–05
SO–16
ISSUE J
16. EMITTER, #1
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MMPQ2222/D
◊
相关型号：
MMPQ2222AD84Z
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, SOIC-16
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