MPS2907A [MOTOROLA]
General Purpose Transistors; 通用晶体管
| 型号： | MPS2907A |
| 厂家： | 
MOTOROLA |
| 描述： | General Purpose Transistors |
| 文件： | 总6页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MPS2907/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
2
Rating
Symbol
MPS2907
MPS2907A
–60
Unit
Vdc
3
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
–40
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
–60
Vdc
–5.0
Vdc
Collector Current — Continuous
I
C
–600
mAdc
Total Device Dissipation
P
D
D
@ T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
Total Device Dissipation
P
@ T = 25°C
1.5
12
Watts
mW/°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
J stg
–500 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
(I = –10 mAdc, I = 0)
MPS2907
MPS2907A
V
V
–40
–60
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Base Breakdown Voltage
(I = –10 Adc, I = 0)
–60
–5.0
—
—
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = –10 Adc, I = 0)
V
—
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = –30 Vdc, V
I
–50
nAdc
µAdc
CEX
= –0.5 Vdc)
CE EB(off)
Collector Cutoff Current
I
CBO
(V
CB
= –50 Vdc, I = 0)
MPS2907
MPS2907A
MPS2907
MPS2907A
—
—
—
—
–0.02
–0.01
–20
E
(V
CB
= –50 Vdc, I = 0, T = 150°C)
E
A
–10
Base Current
(V = –30 Vdc, V
I
B
—
–50
nAdc
= –0.5 Vdc)
300 s, Duty Cycle
CE EB(off)
1. Pulse Test: Pulse Width
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = –0.1 mAdc, V
C
h
FE
—
= –10 Vdc)
MPS2907
MPS2907A
MPS2907
MPS2907A
MPS2907
MPS2907A
MPS2907, MPS2907A
MPS2907
35
75
50
100
75
100
100
30
—
—
—
—
—
—
300
—
CE
CE
CE
(I = –1.0 mAdc, V
C
= –10 Vdc)
= –10 Vdc)
(I = –10 mAdc, V
C
(1)
(1)
(I = –150 mAdc, V
= –10 Vdc)
= –10 Vdc)
C
CE
CE
(I = –500 mAdc, V
C
MPS2907A
50
—
(1)
Collector–Emitter Saturation Voltage
V
V
Vdc
Vdc
CE(sat)
(I = –150 mAdc, I = –15 mAdc)
—
—
–0.4
–1.6
C
C
B
B
(I = –500 mAdc, I = –50 mAdc)
(1)
Base–Emitter Saturation Voltage
BE(sat)
(I = –150 mAdc, I = –15 mAdc)
—
—
–1.3
–2.6
C
C
B
B
(I = –500 mAdc, I = –50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
(1), (2)
Current–Gain — Bandwidth Product
f
200
—
—
8.0
30
MHz
pF
T
(I = –50 mAdc, V
C
= –20 Vdc, f = 100 MHz)
CE
Output Capacitance
C
obo
(V
CB
= –10 Vdc, I = 0, f = 1.0 MHz)
E
Input Capacitance
(V = –2.0 Vdc, I = 0, f = 1.0 MHz)
C
—
pF
ibo
EB
C
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
Rise Time
(V
CC
B1
= –30 Vdc, I = –150 mAdc,
= –15 mAdc) (Figures 1 and 5)
t
—
—
—
—
—
—
45
10
ns
ns
ns
ns
ns
ns
C
on
I
t
d
t
r
40
Turn–Off Time
Storage Time
Fall Time
(V
CC
= –6.0 Vdc, I = –150 mAdc,
t
100
80
C
off
I = I = 15 mAdc) (Figure 2)
B1 B2
t
s
t
f
30
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
2. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
INPUT
= 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
INPUT
= 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
Z
Ω
Z
Ω
o
o
+15 V
–6.0 V
37
–30 V
200
≤
≤
1.0 k
1.0 k
1.0 k
TO OSCILLOSCOPE
RISE TIME 5.0 ns
TO OSCILLOSCOPE
0
0
≤
RISE TIME
≤ 5.0 ns
50
–16 V
–30 V
50
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
3.0
2.0
V
V
= –1.0 V
= –10 V
CE
CE
T
= 125°C
J
25°C
1.0
0.7
0.5
–55°C
0.3
0.2
–0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
–20
–30
–50 –70 –100
–200 –300 –500
I
, COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
–1.0
–0.8
I
= –1.0 mA
–10 mA
–100 mA
–500 mA
C
–0.6
–0.4
–0.2
0
–0.005 –0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–3.0
–30
–2.0
–5.0 –7.0 –10
–20
–50
I
, BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
300
200
500
300
V
= –30 V
/I = 10
= I
V
= –30 V
/I = 10
CC
CC
I
I
I
200
C B
B1 B2
C B
= 25°C
t
r
100
T
t
J
f
70
50
T = 25°C
J
100
70
50
30
20
t
′ = t – 1/8 t
s s f
30
20
t
@ V
BE(off)
= 0 V
d
10
7.0
5.0
10
2.0 V
7.0
5.0
3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
–5.0 –7.0 –10
–20 –30
I , COLLECTOR CURRENT (mA)
C
–50 –70 –100
–200 –300 –500
I
, COLLECTOR CURRENT
C
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
= 10 Vdc, T = 25°C
CE
A
10
10
f = 1.0 kHz
8.0
8.0
I
= –1.0 mA, R = 430 Ω
s
6.0
4.0
2.0
0
C
6.0
4.0
I
= –50 µA
C
–500 µA, R = 560 Ω
–50 µA, R = 2.7 kΩ
s
–100 µA, R = 1.6 kΩ
s
–100
–500
–1.0 mA
µA
A
µ
s
R
= OPTIMUM SOURCE RESISTANCE
s
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (OHMS)
s
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
20
400
300
C
eb
200
10
100
80
7.0
5.0
V
T
= –20 V
CE
= 25
°C
60
J
C
cb
40
30
3.0
2.0
20
–0.1
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
–1.0 –2.0
–5.0 –10 –20
–50 –100 –200
–500 –1000
REVERSE VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
0
–1.0
–0.8
T
= 25°C
J
V
@ I /I = 10
C B
BE(sat)
R
for V
CE(sat)
VC
–0.5
–1.0
–1.5
CE
@ V
V
= –10 V
BE(on)
–0.6
–0.4
–0.2
0
R
for V
BE
–2.0
–2.5
VB
V
@ I /I = 10
C B
CE(sat)
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200 –500
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200 –500
I
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MPS2907/D
◊
相关型号：
MPS2907A-H-AP
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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