MPS4250RL [MOTOROLA]
40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92;
| 型号： | MPS4250RL |
| 厂家： | 
MOTOROLA |
| 描述： | 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 晶体 小信号双极晶体管 放大器 |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MPS4250/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
1
2
EMITTER
3
MAXIMUM RATINGS
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
–40
–40
–40
–5.0
—
Unit
Vdc
V
CEO
V
Vdc
CES
CBO
EBO
V
V
Vdc
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
mW
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
(I = –5.0 mA)
C
V
–40
–40
–40
–5.0
—
—
—
—
Vdc
Vdc
Vdc
Vdc
(BR)CES
(1)
Collector–Emitter Sustaining Voltage
V
(BR)CEO(sus)
(I = –5.0)
C
Collector–Base Breakdown Voltage
(I = –10 A)
C
V
(BR)CBO
(BR)EBO
Emitter–Base Breakdown Voltage
(I = –10 A)
E
V
Collector Cutoff Current
I
CBO
(V
CB
(V
CB
= –50 V)
= –40 V, T = 65°C)
—
—
–10
–3.0
nA
A
A
Emitter Cutoff Current
(V = –3.0 V)
I
—
–20
nA
EBO
EB
1. Pulse Test: Pulse Width = 300 s; Duty Cycle = 2.0%.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
h
FE
—
(I = –1.0 mA, V
= –5.0 V)
= –5.0 V)
250
250
—
—
C
CE
CE
(I = –10 mA, V
C
(1)
Collector–Emitter Saturation Voltage
V
V
—
–0.25
Vdc
Vdc
CE(sat)
(I = –10 mA, I = –0.5 mA)
C
B
(1)
Base–Emitter Saturation Voltage
—
–0.9
BE(sat)
(I = –10 mA, I = –0.5 mA)
C
B
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
C
—
—
6.0
16
pF
pF
—
obo
(V
CB
= –5.0 V, f = 1.0 MHz)
Input Capacitance
(V = –0.5 V, f = 1.0 MHz)
C
ibo
EB
Small–Signal Current Gain
h
fe
(I = –1.0 mA, V
(I = –0.5 mA, V
C
= –5.0 V, f = 1.0 kHz)
= –5.0 V, f = 20 MHz)
250
2.0
800
—
C
CE
CE
Noise Figure
NF
dB
(I = –20 A, V
(I = –250 A, V
C
= –5.0 V, R = 10 kΩ, f = 1.0 kHz, P
BW
= 150 Hz)
= 150 Hz)
—
—
2.0
2.0
C
CE
S
= –5.0 V, R = 1.0 kΩ, f = 1.0 kHz, P
CE
S
BW
1. Pulse Test: Pulse Width = 300 s; Duty Cycle = 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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MPS4250/D
◊
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