MPSA43 [MOTOROLA]

High Voltage Transistors; 高电压晶体管
MPSA43
型号: MPSA43
厂家: MOTOROLA    MOTOROLA
描述:

High Voltage Transistors
高电压晶体管

晶体 小信号双极晶体管 开关
文件: 总4页 (文件大小:124K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Order this document  
by MPSA42/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
*Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol MPSA42 MPSA43  
Unit  
Vdc  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
300  
300  
6.0  
200  
200  
6.0  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
°C/mW  
°C/mW  
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
MPSA42  
MPSA43  
300  
200  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
Vdc  
(BR)CBO  
MPSA42  
MPSA43  
300  
200  
C
E
EmitterBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
6.0  
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= 200 Vdc, I = 0)  
MPSA42  
MPSA43  
0.1  
0.1  
E
= 160 Vdc, I = 0)  
E
Emitter Cutoff Current  
I
µAdc  
EBO  
(V  
EB  
(V  
EB  
= 6.0 Vdc, I = 0)  
MPSA42  
MPSA43  
0.1  
0.1  
C
= 4.0 Vdc, I = 0)  
C
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
(1)  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 1.0 mAdc, V  
= 10 Vdc)  
= 10 Vdc)  
= 10 Vdc)  
25  
40  
40  
C
CE  
CE  
CE  
(I = 10 mAdc, V  
C
(I = 30 mAdc, V  
C
CollectorEmitter Saturation Voltage  
(I = 20 mAdc, I = 2.0 mAdc)  
V
V
Vdc  
Vdc  
CE(sat)  
MPSA42  
MPSA43  
0.5  
0.4  
C
B
Base–Emitter Saturation Voltage  
(I = 20 mAdc, I = 2.0 mAdc)  
0.9  
BE(sat)  
C
B
SMALLSIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
50  
MHz  
pF  
T
(I = 10 mAdc, V  
C CE  
= 20 Vdc, f = 100 MHz)  
Collector–Base Capacitance  
(V = 20 Vdc, I = 0, f = 1.0 MHz)  
C
cb  
MPSA42  
MPSA43  
3.0  
4.0  
CB  
E
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
200  
100  
50  
V
= 10 Vdc  
CE  
T
= +125°C  
J
25°C  
–55°C  
30  
20  
1.0  
2.0  
3.0  
5.0  
7.0  
, COLLECTOR CURRENT (mA)  
10  
20  
30  
50  
70  
100  
I
C
Figure 1. DC Current Gain  
100  
50  
100  
70  
50  
C
eb  
20  
10  
T
= 25°C  
= 20 V  
J
V
CE  
f = 20 MHz  
30  
20  
5.0  
C
2.0  
1.0  
cb  
10  
1.0  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100 200  
2.0 3.0  
5.0 7.0 10  
20  
30  
50 70 100  
V
, REVERSE VOLTAGE (VOLTS)  
I
, COLLECTOR CURRENT (mA)  
R
C
Figure 2. Capacitances  
Figure 3. Current–Gain — Bandwidth Product  
1.4  
1.2  
1.0  
500  
10  
1.0 ms  
µs  
100 µs  
T
= 25°C  
J
T
= 25  
°
C
A
200  
100  
50  
T
= 25°C  
C
100 ms  
0.8  
0.6  
0.4  
0.2  
0
V
@ I /I = 10  
C B  
BE(sat)  
20  
10  
CURRENT LIMIT  
THERMAL LIMIT  
V
@ V  
CE  
= 10 V  
BE(on)  
5.0  
(PULSE CURVES @ T = 25  
°C)  
C
SECOND BREAKDOWN LIMIT  
2.0  
1.0  
0.5  
CURVES APPLY  
BELOW RATED V  
V
@ I /I = 10  
C B  
CE(sat)  
MPSA43  
MPSA42  
CEO  
1.0  
2.0 3.0  
5.0 7.0 10  
20  
30  
50 70 100  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100 200  
500  
I
, COLLECTOR CURRENT (mA)  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
C
CE  
Figure 4. “On” Voltages  
Figure 5. Maximum Forward Bias  
Safe Operating Area  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.  
DIMENSION D AND J APPLY BETWEEN L AND K  
MINIMUM. LEAD DIMENSION IS UNCONTROLLED  
IN P AND BEYOND DIMENSION K MINIMUM.  
R
P
L
F
SEATING  
PLANE  
INCHES  
MIN  
MILLIMETERS  
K
DIM  
A
B
C
D
F
G
H
J
K
L
N
P
MAX  
0.205  
0.210  
0.165  
0.022  
0.019  
0.055  
0.105  
0.020  
–––  
MIN  
4.45  
4.32  
3.18  
0.41  
0.41  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
–––  
MAX  
5.20  
5.33  
4.19  
0.55  
0.48  
1.39  
2.66  
0.50  
–––  
0.175  
0.170  
0.125  
0.016  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
–––  
D
J
X X  
G
H
V
SECTION X–X  
C
–––  
–––  
0.105  
0.100  
–––  
2.66  
2.54  
–––  
1
N
R
V
0.115  
0.135  
2.93  
3.43  
N
–––  
–––  
STYLE 1:  
PIN 1. EMITTER  
CASE 029–04  
(TO–226AA)  
ISSUE AD  
2. BASE  
3. COLLECTOR  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA/EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
MPSA42/D  

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