MPSA70RLRF [MOTOROLA]
100mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92;
| 型号： | MPSA70RLRF |
| 厂家： | 
MOTOROLA |
| 描述： | 100mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 晶体 放大器 小信号双极晶体管 |
| 文件： | 总8页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MPSA70/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Emitter–Base Voltage
Symbol
Value
Unit
V
V
–40
–4.0
–100
Vdc
Vdc
CEO
EBO
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
(I = –1.0 mAdc, I = 0)
V
–40
–4.0
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Emitter–Base Breakdown Voltage
(I = –100 µAdc, I = 0)
V
(BR)EBO
E
C
Collector Cutoff Current
(V = –30 Vdc, I = 0)
I
–100
nAdc
CBO
CB
E
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
(I = –5.0 mAdc, V
C CE
h
40
—
400
—
FE
= –10 Vdc)
Collector–Emitter Saturation Voltage
(I = –10 mAdc, I = –1.0 mAdc)
V
–0.25
Vdc
CE(sat)
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
125
—
—
MHz
pF
T
(I = –5.0 mAdc, V
C
= –10 Vdc, f = 100 MHz)
CE
Output Capacitance
C
4.0
obo
(V
CB
= –10 Vdc, I = 0, f = 1.0 MHz)
E
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(V
= –5.0 Vdc, T = 25°C)
CE
A
10
7.0
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
R
≈ 0
S
R
≈∞
S
I = 1.0 mA
C
I
= 10
µA
3.0
2.0
C
300
100
µA
30
100
300
µA
1.0
3.0
2.0
µA
0.7
0.5
µA
µA
1.0 mA
0.3
0.2
30
10
µ
A
A
µ
1.0
0.1
10
20
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
10
20
50
100 200
500
1.0 k 2.0 k
5.0 k 10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V
= –5.0 Vdc, T = 25°C)
CE
A
1.0 M
500 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
200 k
100 k
50 k
20 k
10 k
20 k
10 k
0.5 dB
0.5 dB
5.0 k
2.0 k
5.0 k
2.0 k
1.0 dB
1.0 dB
2.0 dB
2.0 dB
1.0 k
500
1.0 k
500
3.0 dB
5.0 dB
3.0 dB
200
100
200
100
5.0 dB
500 700 1.0 k
10
20 30
50 70 100
200 300
A)
500 700 1.0 k
10
20 30
50 70 100
200 300
I
, COLLECTOR CURRENT (
µ
I , COLLECTOR CURRENT (µ
C
A)
C
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k
10 Hz to 15.7 kHz
200 k
100 k
Noise Figure is Defined as:
50 k
2
R
n S
2
1 2
2
e
n
4KTR
4KTR
I
S
20 k
10 k
NF
20 log
10
S
0.5 dB
e
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
n
5.0 k
2.0 k
I
n
1.0 dB
2.0 dB
–23
= Boltzman’s Constant (1.38 x 10
K
T
R
j/°K)
1.0 k
500
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
S
3.0 dB
5.0 dB
200
100
20
30
50 70 100
200 300
500 700 1.0 k
10
I
, COLLECTOR CURRENT (µA)
C
Figure 5. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL STATIC CHARACTERISTICS
400
200
T
= 125°C
J
25°C
–55°C
100
80
MPSA70
60
V
V
= 1.0 V
= 10 V
CE
CE
40
0.003 0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
3.0
2.0
5.0 7.0 10
20
30
50 70 100
I
, COLLECTOR CURRENT (mA)
C
Figure 6. DC Current Gain
1.0
0.8
100
I
= 400 µA
T
= 25°C
T
= 25
°
C
B
A
A
PULSE WIDTH = 300
DUTY CYCLE 2.0%
µ
s
MPSA70
350 µA
≤
80
60
300 µA
250
200
µA
I
= 1.0 mA
10 mA
50 mA
100 mA
C
0.6
0.4
0.2
0
µA
150 µA
40
20
0
100
50
µA
µA
0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
0
5.0
10
15
20
25
30
35
40
I
, BASE CURRENT (mA)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
B
CE
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
1.4
1.2
1.6
0.8
0
T
= 25°C
J
*APPLIES for I /I
C B
≤
h
/2
FE
1.0
0.8
0.6
0.4
25°C to 125°C
*
for V
CE(sat)
VC
–55°C to 25°C
V
@ I /I = 10
C B
BE(sat)
0.8
1.6
2.4
V
@ V = 1.0 V
CE
BE(on)
25°C to 125°C
–55°C to 25°C
for V
BE
0.2
0
VB
V
@ I /I = 10
C B
CE(sat)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
I
1.0
2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
C
C
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL DYNAMIC CHARACTERISTICS
500
1000
V
I
= –3.0 V
/I = 10
= I
= 25°C
V
I
= 3.0 V
CC
C B
CC
/I = 10
700
500
300
200
C B
I
T
T
= 25°C
B1 B2
J
t
s
300
200
J
100
70
50
100
70
50
30
20
t
r
t
f
30
20
t
@ V
BE(off)
= 0.5 V
10
d
10
7.0
5.0
1.0
10
–1.0
2.0 3.0
5.0 7.0
20
30
50 70 100
–2.0 –3.0
–10
–20 –30
, COLLECTOR CURRENT (mA)
C
–100
–50 –70
–5.0 –7.0
I
, COLLECTOR CURRENT (mA)
I
C
Figure 11. Turn–On Time
Figure 12. Turn–Off Time
500
10
7.0
5.0
T
J
= 25°C
T
= 25°C
J
V
= 20 V
300
200
CE
C
ib
5.0 V
3.0
2.0
100
70
C
ob
50
1.0
0.05 0.1
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
0.2
0.5
V , REVERSE VOLTAGE (VOLTS)
R
1.0
2.0
5.0
10
20
50
I
, COLLECTOR CURRENT (mA)
C
Figure 13. Current–Gain — Bandwidth Product
Figure 14. Capacitance
20
10
200
100
V
= –10 Vdc
V
= 10 Vdc
CE
f = 1.0 kHz
= 25
CE
f = 1.0 kHz
= 25
T
°C
T
°C
A
A
7.0
5.0
MPSA70
200
@ I = –1.0 mA
70
50
h
≈
fe
MPSA70
200
@ I = 1.0 mA
C
3.0
2.0
30
20
h
≈
fe
C
1.0
0.7
0.5
10
7.0
5.0
0.3
0.2
3.0
2.0
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.2
0.5
1.0
I , COLLECTOR CURRENT (mA)
C
2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mA)
C
Figure 15. Input Impedance
Figure 16. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
FIGURE 19
1
0.05
DUTY CYCLE, D = t /t
1 2
P
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
(pk)
0.02
0.01
0.03
0.02
t
READ TIME AT t (SEE AN–569)
1
θ
(pk)
Z
T
= r(t)
•
R
SINGLE PULSE
θ
J(pk)
JA(t)
JA
t
2
– T = P
Z
θJA(t)
A
0.01
0.01 0.02
0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
100 k
50 k
t, TIME (ms)
Figure 17. Thermal Response
400
10
µs
1.0 ms
dc
The safe operating area curves indicate I –V
limits of the
CE
C
200
100
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
100 µs
T
= 25°C
C
1.0 s
The data of Figure 18 is based upon T
= 150°C; T or T is
C A
J(pk)
variable depending upon conditions. Pulse curves are valid for duty
cyclesto10%providedT ≤ 150°C. T maybecalculatedfrom
60
40
T
= 25°C
A
dc
J(pk)
J(pk)
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
20
10
T = 150°C
J
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
4.0
40
2.0
4.0
6.0
8.0 10
20
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 18. Active–Region Safe Operating Area
4
10
10
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
= 30 V
CC
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
3
2
I
CEO
To find Z
steady state value R
, multiply the value obtained from Figure 17 by the
θJA(t)
.
1
θJA
10
10
I
CBO
Example:
AND
Dissipating 2.0 watts peak under the following conditions:
= 1.0 ms, t = 5.0 ms (D = 0.2)
I
@ V
= 3.0 V
0
CEX
BE(off)
t
1
2
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
–1
10
10
The peak rise in junction temperature is therefore
–2
∆T = r(t) x P
(pk)
x R
= 0.22 x 2.0 x 200 = 88°C.
θJA
–4
0
–2
0
0
+20 +40 +60 +80 +100 +120 +140 +160
T , JUNCTION TEMPERATURE ( C)
For more information, see AN–569.
°
J
Figure 19. Typical Collector Leakage Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MPSA70/D
◊
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