MR750 [MOTOROLA]
HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION; 高电流引线装式硅整流50-1000伏扩散结
| 型号： | MR750 |
| 厂家： | 
MOTOROLA |
| 描述： | HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION |
| 文件： | 总6页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MR750/D
SEMICONDUCTOR TECHNICAL DATA
•
•
•
Current Capacity Comparable to Chassis Mounted Rectifiers
Very High Surge Capacity
Insulated Case
Mechanical Characteristics:
MR754 and MR760 are
Motorola Preferred Devices
•
•
•
Case: Epoxy, Molded
Weight: 2.5 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Lead is
Readily Solderable
HIGH CURRENT
LEAD MOUNTED
SILICON RECTIFIERS
50–1000 VOLTS
•
•
•
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Polarity: Cathode Polarity Band
DIFFUSED JUNCTION
Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units
per reel by adding a “RL’’ suffix to the part number
•
Marking: R750, R751, R752, R754, R758, R760
CASE 194–04
MAXIMUM RATINGS
Characteristic
Symbol
MR750 MR751 MR752 MR754 MR756 MR758 MR760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
50
100
200
400
600
800
1000
Volts
RRM
RWM
R
V
Non–Repetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
V
60
35
120
70
240
140
480
280
720
420
960
560
1200
700
Volts
RSM
RMS Reverse Voltage
V
Volts
R(RMS)
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
See Figures 5 and 6
I
O
Amps
22 (T = 60°C, 1/8″ Lead Lengths)
L
6.0 (T = 60°C, P.C. Board mounting)
A
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions)
I
Amps
FSM
400 (for 1 cycle)
65 to +175
Operating and Storage Junction
Temperature Range
T , T
J stg
°C
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage Drop
v
1.25
Volts
F
(i = 100 Amps, T = 25°C)
F
J
Maximum Forward Voltage Drop
(I = 6.0 Amps, T = 25°C, 3/8″ leads)
V
F
0.90
Volts
F
A
Maximum Reverse Current
(Rated dc Voltage)
T
J
T
J
= 25°C
= 100°C
I
R
25
1.0
µA
mA
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
Motorola, Inc. 1996
700
500
600
V
MAY BE APPLIED BETWEEN
RRM
EACH CYCLE OF SURGE. THE T
T
= 25°C
J
J
400
300
NOTED IS T PRIOR TO SURGE
J
300
200
MAXIMUM
25°C
TYPICAL
175°C
200
25°C
T
= 175°C
J
100
70
100
80
50
60
30
20
1.0
2.0
5.0
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
Figure 2. Maximum Surge Capability
10
7.0
5.0
+0.5
0
3.0
2.0
TYPICAL RANGE
–0.5
–1.0
1.0
0.7
0.5
–1.5
–2.0
0.3
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.6 0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
i , INSTANTANEOUS FORWARD CURRENT (AMP)
F
Figure 3. Forward Voltage Temperature Coefficient
Figure 1. Forward Voltage
20
10
1/2”
3/8”
L
L
1/4”
1/8”
5.0
HEAT SINK
3.0
2.0
Both leads to heat sink, with lengths as shown. Variations in R
JL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about ±20% from the values shown. Values
for times greater than 2.0 seconds may be obtained by drawing a
curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
1.0
0.5
typical or maximum values may be used. For R
values at pulse
JL(t)
widths less than 0.1 second, the above curve can be extrapolated
down to 10 s at a continuing slope.
0.3
0.2
0.1
µ
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
t, TIME (SECONDS)
Figure 4. Typical Transient Thermal Resistance
2
Rectifier Device Data
28
24
20
16
12
8.0
4.0
0
7.0
6.0
5.0
4.0
3.0
2.0
R
= 25
°
C/W
SEE NOTE
RESISTIVE INDUCTIVE LOADS
CAPACITANCE LOADS – 1 & 3
θ
JA
RESISTIVE INDUCTIVE
LOADS
L = 1/8”
1/4”
BOTH LEADS TO HEAT
SINK WITH LENGTHS
AS SHOWN
I
I
= 5 I
(pk)
(pk)
avg
= 10 I
3/8”
avg
= 20 I
I
(pk)
avg
5/8”
60
R
= 40
°
C/W
θ
JA
f = 60 Hz
SEE NOTE
1.0
0
6
(I /I = 6.28)
PK AVE
0
20
40
80
100
120 140
C)
160 180 200
0
20
40
60
80
100 120
140 160 180 200
C)
T , LEAD TEMPERATURE (
°
T , AMBIENT TEMPERATURE (°
L
A
Figure 5. Maximum Current Ratings
Figure 6. Maximum Current Ratings
NOTES
THERMAL CIRCUIT MODEL
(For Heat Conduction Through The Leads)
32
28
24
20
16
12
8.0
4.0
0
CAPACITANCE LOADS
= 5 I
I
(pk)
avg
6
R
T
R
R
R
R
R
θS(K)
θ
S(A)
θ
L(A)
θ
J(A)
T
θJ(K)
θ
L(K)
10 I
20 I
avg
avg
1
& 3
T
A(A)
A(K)
P
F
T
T
T
T
L(K)
L(A)
C(A)
J
C(K)
Use of the above model permits junction to lead thermal resistance for
any mounting configuration to be found. Lowest values occur when one
side of the rectifier is brought as close as possible to the heat sink as
shown below. Terms in the model signify:
RESISTIVE – INDUCTIVE LOADS
T
T
R
R
R
= Ambient Temperature
= Lead Temperature
= Thermal Resistance, Heat Sink to Ambient
= Thermal Resistance, Lead to Heat Sink
= Thermal Resistance, Junction to Case
T
T
= Case Temperature
= Junction Temperature
A
L
C
J
0
4.0
8.0
12
16
20
24
28
32
S
L
J
I
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 7. Power Dissipation
P
= Power Dissipation
F
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
R
R
= 40
°
C/W/in. Typically and 44
°C/W/in Maximum.
L
J
= 2°C/W typically and 4 C/W Maximum.
°
40
Since R is so low, measurements of the case temperature, T , will be
J
C
SINGLE LEAD TO HEAT SINK,
INSIGNIFICANT HEAT FLOW
THROUGH OTHER LEAD
approximately equal to junction temperature in practical lead mounted
applications. When used as a 60 Hz rectifierm the slow thermal response
holds T
35
30
25
20
15
close to T
. Therefore maximum lead temperature may
P . P may be found from Figure 7.
J(PK)
J(AVG)
be found from: T = 175 –R
°
L
θ
JL
The recommended method of mounting to a P.C. board is shown on the
sketch, where R is approximately 25 C/W for a 1–1/2” x 1–1/2” copper
C/W are typical for mounting to terminal strips
F
F
°
θ
JA
surface area. Values of 40
°
or P.C. boards where available surface area is small.
10
5.0
0
BOTH LEADS TO HEAT
SINK, EQUAL LENGTH
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1.0
L, LEAD LENGTH (INCHES)
Board Ground Plane
Recommended mounting for half wave circuit
Figure 8. Steady State Thermal Resistance
Rectifier Device Data
3
100
70
30
20
T
= 25°C
J
T
= 25°C
J
10
T
= 175°C
J
50
30
7.0
5.0
I
= 5 A
3 A
F
CURRENT INPUT WAVEFORM
1 A
I
3.0
2.0
F
0
I
R
t
rr
1.0
0.1
20
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
REPETITION FREQUENCY (kHz)
I
/I , RATIO OF REVERSE TO FORWARD CURRENT
R F
Figure 9. Rectification Efficiency
Figure 10. Reverse Recovery Time
1.0
0.7
1000
700
f
T
= 25°C
J
500
300
200
T
= 25°C
J
t
fr
fr
0.5
= 1.0 V
fr
fr
100
70
0.3
0.2
50
30
20
= 2.0 V
7.0
0.1
10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
2.0
1.0
3.0
5.0
10
V
, REVERSE VOLTAGE (VOLTS)
I , FORWARD PULSE CURRENT (AMP)
F
R
Figure 11. Junction Capacitance
Figure 12. Forward Recovery Time
For a square wave input of amplitude V , the efficiency
m
factor becomes:
R
S
V
R
O
L
2
V m
2
R
2
L
.
σ
100%
50%
(3)
(square)
V m
Figure 13. Single–Phase Half–Wave
Rectifier Circuit
R
L
The rectification efficiency factor σ shown in Figure 9 was
calculated using the formula:
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the re-
verse recovery time of the diode (Figure 10) becomes signifi-
cant, resulting in an increasing ac voltage component across
R which is opposite in polarity to the forward current, there-
L
by reducing the value of the efficiency factor σ, as shown on
2 (dc)
V o
(1)
100%
R
P
L
2 (dc)
(dc)
V o
V o(ac) V o
.
.
σ
100%
2 (rms)
V o
2
2 (dc)
P
(rms)
R
L
Figure 9.
For a sine wave input V sin (wt) to the diode, assumed
lossless, the maximum theoretical efficiency factor becomes:
It should be emphasized that Figure 9 shows waveform ef-
ficiency only; it does not provide a measure of diode losses.
m
Data was obtained by measuring the ac component of V
o
2
V
m
with a true rms ac voltmeter and the dc component with a dc
voltmeter. The data was used in Equation 1 to obtain points
for Figure 9.
2
R
L
4
π
.
.
σ
100%
100%
40.6%
(2)
2
V
(sine)
m
2
4R
L
4
Rectifier Device Data
PACKAGE DIMENSIONS
A
K
D
NOTES:
1. CATHODE SYMBOL ON PACKAGE.
1
MILLIMETERS INCHES
DIM
A
B
MIN
8.43
5.94
1.27
25.15
MAX
8.69
6.25
1.35
25.65
MIN
MAX
0.342
0.246
0.053
1.010
0.332
0.234
0.050
0.990
D
E
B
STYLE 1:
PIN 1. CATHODE
2. ANODE
K
2
CASE 194–04
ISSUE F
Rectifier Device Data
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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相关型号：
MR750-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, P-600, 2 PIN
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