MRF18085ALSR3 [MOTOROLA]
RF Power Field Effect Transistors; 射频功率场效应晶体管![MRF18085ALSR3](http://pdffile.icpdf.com/pdf1/p00058/img/icpdf/MRF18085_301501_icpdf.jpg)
型号: | MRF18085ALSR3 |
厂家: | ![]() |
描述: | RF Power Field Effect Transistors |
文件: | 总8页 (文件大小:379K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MRF18085A
Rev. 4, 12/2004
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085AR3
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and
multicarrier amplifier applications. To be used in Class AB for PCN-PCS/
cellular radio and WLL applications. Specified for GSM - GSM EDGE
1805-1880 MHz.
MRF18085ALSR3
1800-1880 MHz, 85 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
• GSM and GSM EDGE Performance, Full Frequency Band
(1805-1880 MHz)
Power Gain - 15 dB (Typ) @ 85 Watts CW
Efficiency - 52% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1805 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
CASE 465-06, STYLE 1
NI-780
MRF18085AR3
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465A-06, STYLE 1
NI-780S
MRF18085ALSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-0.5, +65
-0.5, +15
Vdc
Vdc
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
273
1.56
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
Table 2. Thermal Characteristics
Characteristic
(1)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.79
°C/W
θ
JC
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
M3 (Minimum)
Machine Model
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2004. All rights reserved.
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
V
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
(BR)DSS
(V = 0 Vdc, I = 100 µAdc)
GS
D
Zero Gate Voltage Drain Current
(V = 26 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate-Source Leakage Current
I
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
V
2
—
3.9
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 200 µAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 600 mAdc)
V
2.5
—
—
4.5
—
—
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.15
6.0
GS
D
Forward Transconductance
(V = 10 Vdc, I = 2 Adc)
g
fs
DS
D
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
C
—
3.6
—
pF
rss
(V = 26 Vdc, V = 0, f = 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system)
(2)
Common-Source Amplifier Power Gain @ 85 W
G
13.5
48
15
52
—
—
-9
—
dB
%
ps
(V = 26 Vdc, I = 800 mA, f = 1805 - 1880 MHz)
DD
DQ
(2)
Drain Efficiency @ 85 W
(V = 26 Vdc, I = 800 mA, f = 1805 - 1880 MHz)
η
DD
DQ
(2)
Input Return Loss @ 85 W
(V = 26 Vdc, I = 800 mA, f = 1805 - 1880 MHz)
IRL
—
-12
90
dB
DD
DQ
Power Output, 1 dB Compression Point
(V = 26 Vdc, I = 800 mA, f = 1805 - 1880 MHz)
P1dB
83
Watts
DD
DQ
Output Mismatch Stress @ P1dB
(V = 26 Vdc, I = 800 mA, f = 1805 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
DD
DQ
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring
batch-to-batch consistency.
MRF18085AR3 MRF18085ALSR3
RF Device Data
Freescale Semiconductor
5-2
V
SUPPLY
+
C7
C8
C9
V
BIAS
R1
+
C4
R2
Z2
C6
C5
RF
OUTPUT
R3
Z7
Z8
Z9
Z10
Z11
Z12
RF
INPUT
C2
Z1
Z4
Z5
Z6
C3
C10
C1
DUT
Z3
C1, C3, C6, C7 10 pF Chip Capacitors, ATC
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
PCB
0.610″ x 00.118″ Microstrip
0.331″ x 1.153″ Microstrip
0.063″ x 1.153″ Microstrip
0.122″ x 0.925″ Microstrip
0.547″ x 0.925″ Microstrip
0.394″ x 0.177″ Microstrip
0.180″ x 0.087″ Microstrip
0.686″ x 0.087″ Microstrip
0.294″ x 0.087″ Microstrip
C2
1.8 pF Chip Capacitor, ATC
C4
10 mF, 35 V Tantalum Capacitor, AVX
C5, C8
C9
C10
R1, R2
R3
1 nF Chip Capacitors, ATC
220 mF, 63 V Electrolytic Capacitor, Radial, Philips
0.3 pF Chip Capacitor, ATC
10 kW, 1/4 W Chip Resistors (1206)
1.0 kW, 1/4 W Chip Resistor (1206)
0.671″ x 0.087″ Microstrip
Z1
Taconic TLX8, 30 mils, ε = 2.55
Z2
0.568″ x 0.087″ Microstrip
r
Z3
0.500″ x 0.098″ Microstrip Shorted Stub
Figure 1. 1800-1880 MHz Test Fixture Schematic
C9
R1
C4
C5 C6
C7
C8
R2
R3
C2
C1
C3
C10
Strap
MRF18085A
C-PP-02-01-2-Rev0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1800-1880 MHz Test Fixture Component Layout
MRF18085AR3 MRF18085ALSR3
5-3
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
17
17
V
= 26 Vdc
f = 1840 MHz
DD
16
15
14
13
12
11
16
15
I
= 1000 mA
800 mA
DQ
T = 25_C
C
600 mA
14
13
400 mA
32 V
28 V
24 V
12
11
10
10
9
I
= 800 mA
f = 1840 MHz
DQ
V
= 20 V
DD
T = 25_C
C
8
0
1
10
100
1000
0.1
1
10
100
1000
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
Figure 3. Power Gain versus Output Power
Figure 4. Power Gain versus Output Power
120
100
17
16
P = 8 W
in
V
I
= 26 Vdc
= 800 mA
DD
T = 25_C
C
DQ
4 W
f = 1840 MHz
15
14
85_C
80
60
40
20
0
V
= 26 Vdc
= 800 mA
DD
50_C
I
DQ
T = 25_C
C
13
12
1 W
11
10
9
0.5 W
1800
1820
1840
1860
1880
1900
1
10
100
1000
f, FREQUENCY (MHz)
P , OUTPUT POWER (WATTS)
out
Figure 6. Output Power versus Frequency
Figure 5. Power Gain versus Output Power
17
16
15
14
13
12
0
16
15
14
13
12
60
50
40
30
20
G
ps
G
ps
@ 30 W
−4
G
ps
@ 80 W
−8
V
= 26 Vdc
= 800 mA
DD
−12
−16
−20
I
DQ
f = 1840 MHz
IRL @ 30 W
IRL @ 80 W
T = 25_C
C
V
= 26 Vdc
= 800 mA
DD
11
10
10
0
η
11
10
−24
−28
I
DQ
T = 25_C
C
1750
1800
1850
f, FREQUENCY (MHz)
1900
1950
0.1
1
10
, OUTPUT POWER (WATTS)
100
1000
P
out
Figure 7. Power Gain versus Frequency
Figure 8. Power Gain and Efficiency versus
Output Power
MRF18085AR3 MRF18085ALSR3
RF Device Data
Freescale Semiconductor
5-4
Z = 10 Ω
o
f = 1990 MHz
f = 1710 MHz
Z
load
f = 1990 MHz
f = 1710 MHz
Z
source
V
DD
= 26 V, I = 800 mA, P = 85 W CW
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
1710
1785
1805
1880
1930
1960
1990
1.13 - j3.62
1.61 - j4.23
1.69 - j4.34
2.83 - j5.25
3.00 - j5.18
4.39 - j4.97
6.59 - j4.74
1.79 - j2.88
1.82 - j3.15
1.90 - j2.66
2.09 - j2.77
2.01 - j2.44
2.01 - j2.57
1.79 - j2.37
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 9. Series Equivalent Source and Load Impedance
MRF18085AR3 MRF18085ALSR3
RF Device Data
Freescale Semiconductor
5-5
NOTES
MRF18085AR3 MRF18085ALSR3
RF Device Data
Freescale Semiconductor
5-6
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
B
bbb
T A
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
bbb
T A
B
ccc
T A
T A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
M
B
aaa
B
ccc
T A
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465-06
ISSUE F
NI-780
MRF18085AR3
4X U
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4X Z
B
(LID)
1
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
2X K
2
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−−
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0.040
0.030
B
(FLANGE)
C
D
D
M
M
M
bbb
T A
B
E
F
H
K
(LID)
N
(LID)
R
M
M
M
M
M
ccc
T A
B
B
N
M
M
M
B
ccc
T A
T A
R
S
(INSULATOR)
S
(INSULATOR)
M
U
M
M
M
M
M
aaa
B
Z
−−−
−−−
bbb
T A
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
H
C
3
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
F
SEATING
PLANE
E
A
T
A
(FLANGE)
CASE 465A-06
ISSUE F
NI-780S
MRF18085ALSR3
MRF18085AR3 MRF18085ALSR3
RF Device Data
Freescale Semiconductor
5-7
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Document Number:
Rev. 4, 12/2004
MRF18085A
相关型号:
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