MRF19085 [MOTOROLA]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF19085 |
| 厂家： | 
MOTOROLA |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总12页 (文件大小：585K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF19085/D
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
MRF19085R3
MRF19085LR3
MRF19085SR3
MRF19085LSR3
• Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,
I
DQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
1990 MHz, 90 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — -51 dB
IM3 — -36.5 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
CASE 465-06, STYLE 1
NI-780
MRF19085R3,MRF19085LR3
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
CASE 465A-06, STYLE 1
NI-780S
MRF19085SR3, MRF19085LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
-0.5, +15
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
273
1.56
Watts
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.79
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
Machine Model
1 (Minimum)
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
Motorola, Inc. 2004
For More Information On This Product,
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Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V = 0 Vdc, I = 100 µAdc)
V
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
(BR)DSS
GS
D
Zero Gate Voltage Drain Current
(V = 26 Vdc, V = 0 Vdc)
I
I
DSS
GSS
DS
GS
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
GS
DS
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
V
V
2
—
3.5
0.18
6
4
4.5
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 200 µAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 850 mAdc)
2.5
—
—
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.210
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 2 Adc)
g
fs
DS
D
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
C
rss
—
3.6
—
pF
(V = 26 Vdc, V = 0, f = 1.0 MHz)
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(V = 26 Vdc, P = 18 W Avg., I = 850 mA, f1 = 1930 MHz,
DQ
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
G
12
21
—
13
23
—
—
dB
%
ps
DD
out
Drain Efficiency
η
(V = 26 Vdc, P = 18 W Avg., I = 850 mA, f1 = 1930 MHz,
DQ
DD
out
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
3rd Order Intermodulation Distortion
IMD
-36.5
-35
dBc
(V = 26 Vdc, P = 18 W Avg., I = 850 mA, f1 = 1930 MHz,
DQ
DD
out
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 -2.5 MHz and f2 = +2.5 MHz)
Adjacent Channel Power Ratio
ACPR
—
—
-51
-12
-48
-9
dBc
dB
(V = 26 Vdc, P = 18 W Avg., I = 850 mA, f1 = 1930 MHz,
DD
out
DQ
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 -885 MHz and f2 =+885 MHz)
Input Return Loss
IRL
(V = 26 Vdc, P = 18 W Avg., I = 850 mA, f1 = 1930 MHz,
DD
out
DQ
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Output Mismatch Stress
Ψ
No Degradation In Output Power
Before and After Test
(V = 26 Vdc, P = 90 W CW, I = 850 mA, f = 1930 MHz, VSWR
DQ
DD
out
= 5:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
2
MOTOROLA RF DEVICE DATA
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ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
G
—
13
—
dB
ps
(V = 26 Vdc, P = 90 W PEP, I
1990 MHz, Tone Spacing = 100 kHz)
= 850 mA, f = 1930 MHz and
= 850 mA, f = 1930 MHz and
= 850 mA, f = 1930 MHz and
= 850 mA, f = 1930 MHz and
DD
out
DQ
Two-Tone Drain Efficiency
η
—
—
—
—
36
-31
-12
90
—
—
—
—
%
dBc
dB
W
(V = 26 Vdc, P = 90 W PEP, I
DQ
DD
out
1990 MHz, Tone Spacing = 100 kHz)
3rd Order Intermodulation Distortion
IMD
IRL
(V = 26 Vdc, P = 90 W PEP, I
DQ
DD
out
1990 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V = 26 Vdc, P = 90 W PEP, I
DQ
DD
out
1990 MHz, Tone Spacing = 100 kHz)
P
, 1 dB Compression Point
out
P1dB
(V = 26 Vdc, I
= 850 mA, f = 1990 MHz)
DD
DQ
MOTOROLA RF DEVICE DATA
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
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3
Freescale Semiconductor, Inc.
V
GG
R3
R1
R2
V
DD
B1
L1
+
+
+
+
C5
C4
C3
C2
C7
C8
C9
C10
C11
C12
Z4
Z9
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z5
Z6
Z7
Z8
C1
C6
DUT
Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic
Table 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values
Part
Description
Short Ferrite Bead
Value, P/N or DWG
2743019447
Manufacturer
Fair Rite
B1
C1
51 pF Chip Capacitor
5.1 pF Chip Capacitors
1000 pF Chip Capacitors
0.1 µF Chip Capacitors
0.1 µF Tantalum Surface Mount Capacitor
10 pF Chip Capacitor
10 µF Tantalum Surface Mount Capacitor
22 µF Tantalum Surface Mount Capacitors
1 Turn, 20 AWG, 0.100″ ID
Type N Flange Mounts
1.0 kΩ, 1/8 W Chip Resistor
220 kΩ, 1/8 W Chip Resistor
10 Ω, 1/8 W Chip Resistor
Microstrip
100B510JCA500X
100B5R1JCA500X
100B102JCA500X
CDR33BX104AKWS
T491C105M050
ATC
C2, C7
C3, C9
C4, C10
C5
ATC
ATC
Kemet
Kemet
ATC
C6
100B100JCA500X
T495X106K035AS4394
T491X226K035AS4394
C8
Kemet
Kemet
Motorola
Omni Spectra
C11, C12
L1
N1, N2
R1
3052-1648-10
R2
R3
Z1
0.750″ x 0.0840″
1.090″ x 0.0840″
0.400″ x 1.400″
0.520″ x 0.050″
0.540″ x 1.133″
0.400″ x 0.140″
0.555″ x 0.0840″
0.720″ x 0.0840″
0.560″ x 0.070″
Z2
Microstrip
Z3
Microstrip
Z4
Microstrip
Z5
Microstrip
Z6
Microstrip
Z7
Microstrip
Z8
Microstrip
Z9
Microstrip
Board
PCB
0.030″ Glass Teflon
GX-0300-55-22, ε = 2.55
Keene
CMR
r
Etched Circuit Boards
MRF19085 Rev. 4
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
4
MOTOROLA RF DEVICE DATA
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C8
C2
C7
R1
R2
B1
L1
R3
C10
C9
C4 C3
C5
C1
C11 C12
C6
MRF19085
Rev.4
Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
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5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
0
30
−28
−35
−42
−49
−56
−63
−70
f1
f2
1.2288 MHz BW 1.2288 MHz BW
V
= 26 Vdc, I = 850 mA
DQ
DD
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
−10
−20
−30
−40
−50
−60
−70
25
20
15
10
5
−ACPR @
30 kHz BW
+ACPR @
30 kHz BW
IM3
G
ps
η
−IM3 @
+IM3 @
1.2288 MHz BW
ACPR
1.2288 MHz BW
−5.00 −3.75 −2.50 −1.25
f, FREQUENCY (MHz)
0
0.00
1.25 2.50
3.75 5.00
0.5
30
1
10
, OUTPUT POWER (WATTS Avg.) N−CDMA
P
out
Figure 3. 2-Carrier N-CDMA Spectrum
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
−20
−30
−40
−50
−60
−70
50
40
30
20
10
0
−20
V
= 26 Vdc
= 850 mA
V
f = 1960 MHz
= 26 Vdc
DD
DD
−25
−30
−35
−40
−45
−50
I
DQ
f1 = 1960 MHz
100 kHz Tone Spacing
100 kHz Tone Spacing
I
= 550 mA
DQ
η
700 mA
3rd Order
5th Order
7th Order
1150 mA
1000 mA
850 mA
−55
4
10
, OUTPUT POWER (WATTS) PEP
100
4
10
P , OUTPUT POWER (WATTS) PEP
out
100
P
out
Figure 5. Intermodulation Distortion
Products versus Output Power
Figure 6. Third Order Intermodulation
Distortion versus Output Power and IDQ
24
22
20
18
16
14
12
0
14
54
47
40
33
26
19
12
5
η
G
ps
12
10
8
−10
−20
−30
−40
−50
−60
IRL
V
= 26 V
= 850 mA
DD
I
DQ
f = 1960 MHz
V
P
= 26 V
= 18 W Avg.
DD
out
I
= 850 mA
DQ
6
IM3
η
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability) (CCDF)
4
ACPR
2
P
in
G
ps
0
1930
1940
1950
1960
1970
1980
1990
2
10
, OUTPUT POWER (WATTS)
100 140
f, FREQUENCY (MHz)
P
out
Figure 7. 2-Carrier N-CDMA Broadband
Performance
Figure 8. CW Performance
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
6
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
14.0
13.5
13.0
12.5
12.0
11.5
39
38
37
36
35
34
33
−26
−27
−28
−29
−30
−31
−32
I
= 850 mA
f = 1960 MHz
DQ
I
= 1150 mA
DQ
η
100 kHz Tone Spacing
1000 mA
850 mA
IMD
700 mA
550 mA
V
= 26 Vdc
f = 1960 MHz
DD
100 kHz Tone Spacing
4
10
, OUTPUT POWER (WATTS)
100
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
V
, DRAIN SUPPLY (V)
DD
P
out
Figure 9. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
Figure 10. Two-Tone Power Gain versus Output
Power
40
35
30
−5
η
−10
−15
−20
−25
−30
−35
IRL
V
P
= 26 Vdc
25
20
15
10
DD
out
= 90 W (PEP)
= 850 mA
100 kHz Tone Spacing
I
DQ
IMD
G
ps
1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 11. Two-Tone Broadband Performance
MOTOROLA RF DEVICE DATA
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
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7
Freescale Semiconductor, Inc.
Z = 5 Ω
o
Z
f = 1990 MHz
f = 1990 MHz
load
f = 1930 MHz
Z
source
f = 1930 MHz
V
= 26 V, I = 850 mA, P = 18 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1930
1960
1990
0.75 - j2.50
0.70 - j2.40
0.65 - j2.35
1.05 - j1.95
1.10 - j1.85
1.05 - j1.75
Z
=
Test circuit impedance as measured from
gate to ground.
source
Z
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Series Equivalent Input and Output Impedance
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
8
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
NOTES
MOTOROLA RF DEVICE DATA
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
For More Information On This Product,
Go to: www.freescale.com
9
Freescale Semiconductor, Inc.
NOTES
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
10
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B
G
2X
Q
bbb
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
1
M
M
M
B
T A
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
K
INCHES
DIM MIN MAX
MILLIMETERS
B
2
(FLANGE)
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
D
C
3.18
4.32
M
M
M
B
bbb
T A
D
12.57
0.89
0.08
12.83
1.14
0.15
E
F
(LID)
R
(INSULATOR)
M
N
G
1.100 BSC
27.94 BSC
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
M
M
M
M
M
M
M
bbb
T A
B
ccc
T A
T A
B
K
M
19.66
19.60
3.00
19.96
20.00
3.51
(INSULATOR)
S
N
(LID)
Q
M
M
M
M
M
B
aaa
B
ccc
T A
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
H
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
C
F
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
E
A
T
CASE 465-06
ISSUE F
A
(FLANGE)
NI-780
MRF19085R3, MRF19085LR3
4X U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
(FLANGE)
4X Z
(LID)
B
1
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
− − −
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
− − −
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0.040
0.030
2X K
2
B
C
(FLANGE)
D
D
E
M
M
M
bbb
T A
B
F
H
K
M
N
R
(LID)
N
(LID)
R
S
M
M
M
M
M
U
ccc
T A
B
B
M
M
M
M
ccc
T A
T A
B
Z
− − −
− − −
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
(INSULATOR)
S
(INSULATOR)
M
M
M
M
aaa
B
bbb
T A
STYLE 1:
H
PIN 1. DRAIN
2. GATE
5. SOURCE
C
3
F
SEATING
PLANE
E
A
T
CASE 465A-06
ISSUE F
A
(FLANGE)
NI-780S
MRF19085SR3, MRF19085LSR3
MOTOROLA RF DEVICE DATA
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
For More Information On This Product,
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11
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
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P.O. Box 5405, Denver, Colorado 80217
1-800-521-6274 or 480-768-2130
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center,
3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF19085/D
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