MRF5035 [MOTOROLA]
N-CHANNEL BROADBAND RF POWER FET; N沟道宽带射频功率场效应管
| 型号： | MRF5035 |
| 厂家： | 
MOTOROLA |
| 描述： | N-CHANNEL BROADBAND RF POWER FET |
| 文件： | 总8页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF5035/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
•
Guaranteed Performance at 512 MHz, 12.5 Volt
Output Power — 35 Watts
35 W, 12.5 VOLTS, 512 MHz
N–CHANNEL BROADBAND
RF POWER FET
Power Gain — 6.5 dB Min
Efficiency — 50% Min
•
•
•
•
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Capable of Handling 20:1 Load VSWR, @ 15.5 Volt, 512 MHz,
2 dB Overdrive
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 316–01, STYLE 3
MAXIMUM RATINGS
Rating
Symbol
Value
36
Unit
Drain–Source Voltage
V
DSS
Vdc
Vdc
Vdc
Adc
Drain–Gate Voltage (RGS = 1 MΩ)
Gate–Source Voltage
V
DGR
36
V
GS
± 20
15
Drain Current — Continuous
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
97
0.56
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
T
– 65 to +150
200
°C
°C
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
Symbol
Max
Unit
R
1.8
°C/W
θJC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V
GS
= 0, I = 20 mAdc)
V
36
—
—
—
—
—
—
5
Vdc
mAdc
D
(BR)DSS
Zero Gate Voltage Drain Current (V
DS
= 15 Vdc, V
= 0)
= 0)
I
GS
DSS
Gate–Source Leakage Current (V
GS
= 20 Vdc, V
DS
I
5
µAdc
GSS
(continued)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(V = 10 Vdc, I = 25 mAdc)
V
1.25
—
2.3
—
3.5
0.422
—
Vdc
Vdc
S
GS(th)
DS
Drain–Source On–Voltage
(V = 10 Vdc, I = 3 Adc)
D
V
DS(on)
GS
Forward Transconductance
(V = 10 Vdc, I = 3 Adc )
D
g
fs
3.2
—
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
18
88
197
24
—
—
29
pF
pF
pF
iss
(V
DS
= 12.5 Vdc, V
= 0, f = 1 MHz)
GS
Output Capacitance
(V = 12.5 Vdc, V
C
oss
= 0, f = 1 MHz)
DS
GS
Reverse Transfer Capacitance
(V = 12.5 Vdc, V = 0, f = 1 MHz)
C
rss
DS GS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
G
dB
%
ps
(V
DD
= 12.5 Vdc, P
= 400 mA)
= 35 W,
f = 512 MHz
f = 175 MHz
6.5
—
7.5
12
—
—
out
I
DQ
Drain Efficiency
(V = 12.5 Vdc, P
η
= 35 W,
f = 512 MHz
f = 175 MHz
50
—
55
55
—
—
DD
= 400 mA)
out
I
DQ
Load Mismatch
(V = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
ψ
No Degradation in Output Power
DD
Load VSWR = 20:1, All Phase Angles at Frequency of Test)
Socket
R1
B1
V
V
DD
GG
+
+
C1
C13
C14
C2
R2
L1
B2
C3
R4
C12
C7
C6
C8
C9
L2
DUT
R3
N2
N1
C15
Z7
Z8
C16
Z9
Z1
Z2
Z3
Z4
RF Input
RF Output
C10
C4
C5
C11
Components List
B1, B2
C1, C14
C2
C3
C4, C11
C5
C6, C7
C8, C9
C10
Short Ferrite Bead, Fair Rite Products
10 µF, 50 V, Electrolytic
1500 pF, Chip Capacitor
140 pF, Chip Capacitor
0–10pF, Trimmer Capacitor
30 pF, Chip Capacitor
43 pF, Chip Capacitor
36 pF, Chip Capacitor
3.6 pF, Chip Capacitor
N1, N2
R1
R2
R3
R4
Z1, Z9
Z2
Z3
Z4
Type N Flange Mount
1 kΩ, 1/4 W, Carbon
1 MΩ, 1/4 W, Carbon
100 Ω, 1/4 W, Carbon
110 Ω, 1/4 W, Carbon
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Glass Teflon 0.060″
C12, C15, C16 120 pF, Chip Capacitor
C13
L1
Z7
Z8
Board
0.1 µF, Chip Capacitor
5 Turns, 18 AWG, 0.116″ ID
8 Turns, 20 AWG, 0.125″ ID
L2
*See Photomaster for Dimensions
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic
MRF5035
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
50
40
30
20
55
P
= 10 W
f = 400 MHz
470 MHz
in
50
45
40
35
30
25
20
15
10
5
I
= 400 mA
520 MHz
DQ
f = 400 MHz
7 W
5 W
3 W
10
0
V
= 12.5 V
= 400 mA
DD
DQ
I
0
0
2
4
6
8
10
12
14
6
7
8
9
10
11
12
13
14
15
16
P
, INPUT POWER (WATTS)
V , SUPPLY VOLTAGE (VOLTS)
DD
in
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
55
50
V
P
= 12.5 V
DD
= 7 W
50
45
40
35
30
25
20
15
10
5
f = 400 MHz
520 MHz
in
P
= 10 W
I
= 400 mA
in
DQ
f = 520 MHz
40
30
20
10
0
7 W
5 W
3 W
Typical Device Shown
0
0
1
2
3
4
5
6
6
7
8
9
10
11
12
13
14
15
16
V
, SUPPLY VOLTAGE (VOLTS)
V
, GATE–SOURCE VOLTAGE (VOLTS)
DD
GS
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Gate Voltage
6
5
4
3
2
1
0
400
V
= 10 V
DS
V
= 0 V
GS
f = 1 MHz
350
300
250
200
150
C
C
oss
100
50
C
iss
Typical Device Shown
rss
25
0
0
1
2
3
4
5
0
5
10
15
20
30
V
, GATE–SOURCE VOLTAGE (VOLTS)
V , DRAIN–SOURCE VOLTAGE (VOLTS)
DS
GS
Figure 6. Drain Current versus Gate Voltage
Figure 7. Capacitance versus Voltage
MOTOROLA RF DEVICE DATA
MRF5035
3
TYPICAL CHARACTERISTICS
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
I
= 5 A
DQ
3.5 A
10
2 A
V
= 12.5 V
25
DD
T
= 25°C
1 A
C
0.25 A
1
– 25
0
50
75
100
125
150
175
1
10
100
T
, CASE TEMPERATURE (
°C)
V
, DRAIN–SOURCE VOLTAGE (VOLTS)
C
DS
Figure 8. Gate–Source Voltage
versus Case Temperature
Figure 9. DC Safe Operating Area
520
460
V
DD
= 12.5 V, I
DQ
= 400 mA, P = 7.8 W,
in
Z
*
Tune for Maximum Output Power
OL
f = 400 MHz
f
Z
(Ω)
Z
OL
(Ω)
*
in
(MHz)
Z
in
Z
= 5 Ω
o
520
400
420
440
460
480
500
520
1.0 + j0.89
0.90 + j0.83
0.83 + j0.81
0.82 + j0.83
0.87 + j0.90
0.97 + j1.0
1.1 + j1.2
0.87 + j2.1
0.79 + j2.2
0.73 + j2.3
0.71 + j2.4
0.71 + j2.5
0.74 + j2.6
0.80 + j2.7
460
f = 400 MHz
Z
Z
= Conjugate of source impedance.
in
* = Conjugate of the load impedance at given
input power, voltage and frequency that
produces maximum output power.
OL
Figure 10. Series Equivalent Input and Output Impedance
MRF5035
4
MOTOROLA RF DEVICE DATA
Table 1. Common Source Scattering Parameters (V
= 12.5 V)
DS
I
D
= 100 mA
f
S
11
S
11
S
11
S
11
S
S
S
S
S
S
S
S
S
22
S
22
S
22
S
22
21
12
MHz
|S
|
φ
|S
|
φ
|S
|
φ
|S
|
φ
11
21
12
22
25
50
0.74
0.74
0.77
0.81
0.85
0.90
0.93
0.94
0.95
0.96
–153
–164
–168
–170
–171
–174
–178
–179
179
6.9
3.4
1.6
1
0.69
0.38
0.24
0.20
0.17
0.12
94
82
67
56
46
32
22
19
16
13
0.039
0.039
0.036
0.032
0.028
0.019
0.013
0.010
0.008
0.008
6
– 5
0.87
0.89
0.90
0.92
0.93
0.96
0.97
0.97
0.98
0.98
–169
–174
–176
–178
–179
179
177
175
174
172
100
150
200
300
400
450
500
600
–16
– 25
– 31
– 36
– 30
– 22
– 8
176
27
I
D
= 400 mA
f
21
21
21
12
12
12
MHz
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
25
50
0.88
0.88
0.88
0.89
0.89
0.91
0.92
0.93
0.94
0.95
–163
–172
–176
–178
–179
180
178
177
176
174
7.8
3.9
1.9
1.3
0.91
0.57
0.39
0.33
0.29
0.22
94
87
77
70
63
51
41
37
33
27
0.018
0.018
0.018
0.017
0.016
0.014
0.012
0.012
0.012
0.014
7
3
–1
– 2
–1
3
14
22
29
42
0.93
0.93
0.94
0.94
0.94
0.95
0.96
0.96
0.97
0.97
–175
–178
–180
179
178
177
175
174
173
171
100
150
200
300
400
450
500
600
I
D
= 1 A
f
MHz
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
25
50
0.92
0.91
0.92
0.92
0.92
0.93
0.94
0.94
0.94
0.95
–165
–173
–177
–179
180
178
176
175
174
7.8
3.9
1.9
1.3
0.95
0.61
0.43
0.38
0.33
0.26
95
88
81
75
69
59
50
46
43
36
0.013
0.013
0.013
0.013
0.012
0.012
0.013
0.013
0.014
0.016
9
6
7
9
12
21
32
37
42
49
0.94
0.95
0.95
0.95
0.95
0.96
0.96
0.97
0.97
0.97
–177
–179
179
179
178
176
174
174
173
171
100
150
200
300
400
450
500
600
173
I
D
= 5 A
f
MHz
|S
11
|
φ
|S
21
|
φ
|S
12
|
φ
|S
22
|
φ
25
50
0.94
0.94
0.94
0.94
0.94
0.95
0.95
0.95
0.96
0.96
–164
–172
–177
–179
179
177
176
175
174
7.2
3.6
1.8
1.2
0.89
0.57
0.42
0.36
0.32
0.26
95
89
81
76
70
61
52
48
45
39
0.010
0.010
0.010
0.011
0.011
0.011
0.013
0.013
0.014
0.017
10
9
0.95
0.95
0.96
0.96
0.96
0.96
0.97
0.97
0.97
0.97
–178
–180
179
178
177
176
174
173
172
171
100
150
200
300
400
450
500
600
11
16
21
31
41
45
48
54
172
MOTOROLA RF DEVICE DATA
MRF5035
5
DESIGN CONSIDERATIONS
The MRF5035 is a common–source, RF power, N–Chan-
nel enhancement mode, Metal–Oxide Semiconductor Field–
Effect Transistor (MOSFET). Motorola RF MOSFETs feature
a vertical structure with a planar design. Motorola Application
Note AN211A, “FETs in Theory and Practice,” is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
the linear region of the output characteristic and is specified
at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
V
. For MOSFETs, V has a positive temperature
ds(on)
ds(on)
coefficient at high temperatures because it contributes to the
power dissipation within the device.
GATE CHARACTERISTICS
This device was designed primarily for 12.5 volt VHF and
UHF Land Mobile FM power amplifier applications. The ma-
jor advantages of RF power MOSFETs include high gain,
simple bias systems, relative immunity from thermal run-
away, and the ability to withstand severely mismatched loads
without suffering damage.
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The input resistance is very high, on the order of 10 Ω, re-
sulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
9
MOSFET CAPACITANCES
V
.
GS(th)
Gate Voltage Rating – Never exceed the gate voltage rat-
ing. Exceeding the rated V can result in permanent dam-
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
GS
determines the capacitors from gate–to–drain (C ), and
age to the oxide layer in the gate region.
gd
gate–to–source (C ). The PN junction formed during fab-
gs
Gate Termination – The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open–cir-
cuited or floating must be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
rication of the RF MOSFET results in a junction capacitance
from drain–to–source (C ). These capacitances are charac-
ds
terized as input (C ), output (C
) and reverse transfer
oss
iss
(C ) capacitances on data sheets. The relationships be-
rss
tween the inter–terminal capacitances and those given on
Gate Protection – These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended
with appropriate RF decoupling networks.
data sheets are shown below. The C
two ways:
can be specified in
iss
1. Drain shorted to source and positive voltage at the gate.
Using a resistor to keep the gate–to–source impedance
low also helps dampen transients and serves another impor-
tant function. Voltage transients on the drain can be coupled
to the gate through the parasitic gate–drain capacitance. If
the gate–to–source impedance and the rate of voltage
change on the drain are both high, then the signal coupled to
the gate may be large enough to exceed the gate–threshold
voltage and turn the device on.
2. Positivevoltageofthedraininrespecttosourceandzero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
Drain
DC BIAS
C
gd
gs
Since the MRF5035 is an enhancement mode FET, drain
current flows only when the gate is at a higher potential than
the source. See Figure 6 for a typical plot of drain current
versus gate voltage. RF power FETs operate optimally with a
quiescent drain current (I
DQ
pendent. The MRF5035 was characterized at I
C
C
C
= C + C
gd gs
Gate
iss
= C + C
C
oss
rss
gd ds
= C
gd
ds
), whose value is application de-
= 400 mA,
C
DQ
which is the suggested value of bias current for typical ap-
plications. For special applications such as linear amplifica-
Source
tion, I
parameters.
may have to be selected to optimize the critical
DQ
The gate is a dc open circuit and draws essentially no cur-
rent. Therefore, the gate bias circuit may generally be just a
simple resistive divider network. Some special applications
may require a more elaborate bias system.
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
inthefull–oncondition. Thison–resistance, R
, occursin
ds(on)
MRF5035
6
MOTOROLA RF DEVICE DATA
GAIN CONTROL
Power output of the MRF5035 may be controlled to some
degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. Figure 5 is an example
of output power variation with gate–source bias voltage with
a good first approximation. This is an additional advantage of
RF power MOSFETs.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the high gain of the MRF5035
yield a device quite capable of self oscillation. Stability may
be achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. Different
stabilizing techniques may be required depending on the
desired gain and bandwidth of the application. The RF test
fixture implements a resistor in shunt with the gate to im-
prove stability. Two port stability analysis with the MRF5035
S–parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See
Motorola Application Note AN215A, “RF Small–Signal
Design Using Two–Port Parameters,” for a discussion of two
port network theory and stability.
P
held constant. This characteristic is very dependent on
in
frequency and load line.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF5035. For exam-
ples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Both
small–signal S–parameters and large–signal impedances
are provided. While the S–parameters will not produce an
exact design solution for high power operation, they do yield
MOTOROLA RF DEVICE DATA
MRF5035
7
PACKAGE DIMENSIONS
F
D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
4
R
Q
K
INCHES
MILLIMETERS
3
DIM
MIN
MAX
25.14
12.95
7.62
MIN
0.960
0.490
0.235
0.210
0.085
0.200
0.720
0.004
0.405
0.150
0.150
0.115
0.120
0.470
MAX
0.990
0.510
0.300
0.220
0.120
0.210
0.730
0.006
0.440
0.160
0.170
0.130
0.130
0.495
A
B
C
D
E
F
H
J
K
L
24.38
12.45
5.97
5.33
2.16
5.08
18.29
0.10
10.29
3.81
3.81
2.92
3.05
11.94
1
5.58
3.04
2
5.33
18.54
0.15
L
11.17
4.06
N
Q
R
U
4.31
3.30
B
C
J
3.30
12.57
E
STYLE 3:
PIN 1. SOURCE
N
2. DRAIN
3. SOURCE
4. GATE
H
A
U
CASE 316–01
ISSUE D
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MRF5035/D
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相关型号：
MRF5160HXV
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-39
MOTOROLA
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