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MRF9100 [MOTOROLA]

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs; GSM / EDGE 900兆赫， 110 W， 26 V横向N沟道RF功率MOSFET
MRF9100
元器件型号： MRF9100
生产厂家： MOTOROLA, INC    MOTOROLA, INC
描述和应用：

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
GSM / EDGE 900兆赫， 110 W， 26 V横向N沟道RF功率MOSFET

GSM
PDF文件： 总12页 (文件大小：394K)
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型号参数：MRF9100参数
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MRF9100LR3

 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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18 FREESCALE

MRF9100LSR3

 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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12 FREESCALE

MRF9100R3

 GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

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31 MOTOROLA

MRF9100SR3

 GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

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32 MOTOROLA

MRF911

 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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1 MOTOROLA

MRF911

 RF Small Signal Bipolar Transistor, 1-Element, L Band, Silicon, NPN

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0 MOTOROLA

MRF9120

 RF Power Field Effect Transistors

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158 MOTOROLA

MRF9120

 RF Power Field Effect Transistors

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90 MOTOROLA

MRF9120LR3

 RF Power Field Effect Transistors

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37 MOTOROLA

MRF9120LR3

 RF Power Field Effect Transistors

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40 MOTOROLA

MRF9120R3

 RF Power Field Effect Transistors

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28 MOTOROLA

MRF9120R3

 RF Power Field Effect Transistors

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17 MOTOROLA

MRF9120R3

 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-860, CASE 375B-04, 4 PIN

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2 PHILIPS

MRF9120S

 暂无描述

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0 MOTOROLA

MRF9130L

 RF Power Field Effect Transistors

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15 MOTOROLA
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