MRFIC1818 [MOTOROLA]
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT; 1700-1900 MHz的MMIC DCS1800 / PCS1900集成功率放大器砷化镓单片集成电路
| 型号： | MRFIC1818 |
| 厂家： | 
MOTOROLA |
| 描述： | 1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
| 文件： | 总8页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRFIC1818/D
SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
DesignedspecificallyforapplicationinPanEuropeandigital1.0wattDCS1800
handheldradios,theMRFIC1818isspecifiedfor33dBmoutputpowerwithpower
gainover30dBfroma4.8voltsupply.Withminortuningchanges,theMRFIC1818
can be used for PCS1900 as well as PCS CDMA. To achieve this superior
performance,Motorola’splanarGaAsMESFETprocessisemployed.Thedevice
is packaged in the PFP–16 Power Flat Package which gives excellent thermal
and electrical performance through a solderable backside contact while allowing
the convenience and cost benefits of reflow soldering.
1700–1900 MHz MMIC
DCS1800/PCS1900
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
•
Minimum Output Power Capabilities
33 dBm @ 4.8 Volts
32 dBm @ 4.0 Volts
•
Specified 4.8 Volt Characteristics
RF Input Power = 3.0 dBm
RF Output Power = 33 dBm
Minimum PAE = 35%
•
•
•
Low Current required from Negative Supply – 2 mA max
Guaranteed Stability and Ruggedness
CASE 978–02
(PFP–16)
Order MRFIC1818R2 for Tape and Reel.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
•
Device Marking = M1818
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Z = 50 Ω, unless otherwise noted)
A
O
Rating
Symbol
Value
Unit
Vdc
Vdc
dBm
dBm
°C
DC Positive Supply Voltage
DC Negative Supply Voltage
RF Input Power
V
7.5
D1, 2, 3
V
SS
–5
10
P
in
RF Output Power
P
out
36
Operating Case Temperature Range
Storage Temperature Range
T
C
–35 to +85
–55 to +150
10
T
stg
°C
Thermal Resistance, Junction to Case
R
°C/W
θJC
8
V
GND
9
G
V
10
11
12
D2
7
6
V
D3
V
RF OUT
RF OUT
D2
V
5
4
D1
N/C 13
GND 14
RF OUT
3
2
RF OUT
N/C
15
RF IN
N/C 16
1
GND
Pin Connections and Functional Block Diagram
REV 2
Motorola, Inc. 1997
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Value
2.7 to 6
Unit
Vdc
Supply Voltage
V
D1, 2, 3
Gate Voltage
V
–3.5 to –4.5
1700 to 1900
0 to 6
Vdc
SS
RF
RF Frequency Range
RF Input Power
f
MHz
dBm
P
RF
ELECTRICAL CHARACTERISTICS (V
,
= 4.8 V, V
= –4 V, P = 3 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms
SS in
D1 2, 3
Period, T = 25°C unless otherwise noted. Measured in Reference Circuit Shown in Figure 1.)
A
Characteristic
Min
1710
33
35
—
Typ
—
Max
1785
—
Unit
MHz
dBm
%
Frequency Range
Output Power
34.5
42
Power Added Efficiency
—
Output Power (Tuned for PCS Band, 1850 to 1910 MHz)
Power Added Efficiency (Tuned for PCS Band, 1850 to 1910 MHz)
Input VSWR
34.5
42
—
dBm
%
—
—
—
2:1
–35
33
—
VSWR
dBc
Harmonic Output (2nd and 3rd)
—
–30
—
Output Power at Low voltage (V , V , V = 4.0 V)
D1 D2 D3
32
—
dBm
dBm
dBm
dBc
Output Power, Isolation (V , V , V = 0 V)
–40
–85
—
–35
–80
–60
D1 D2 D3
Noise Power (In 100 kHz, 1805 to 1880 MHz)
Stability – Spurious Output (P = 5 dBm, P
—
= 0 to 33 dBm, Load
out
—
in
VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle)
(1)
Load Mismatch stress (P = 33 dBm, Load VSWR = 10:1 at
any Phase Angle)
No Degradation in Output Power after Returning to
Standard Conditions
out
(1)
3 dB V Bandwidth
—
—
2
—
2
MHz
mA
DD
Negative Supply Current
(1) Adjust V (0 to 4.8 V) for specified P ; Duty Cycle = 12.5%, Period = 4.6 ms.
0.7
D1, 2, 3
out
V
D2
V
D3
V
D1
V
SS
R1
R2
C1
9
8
7
6
5
4
3
2
1
T4
T3
L1
C2
10
11
12
13
C3
C4
C9 C8
C10
T1
NC
NC
RF OUT
C7 C6
L2
14
15
16
T2
C5
NC
RF IN
C1
6.8 nF
C5
L1
L2
3.9 pF, NPO/COG
18 nH, Coilcraft
1.8 nH, Toko 2012
T1
1.4 mm 25 Ω Microstrip Line
5 mm 50 Ω Microstrip Line
4 mm 50 Ω Microstrip Line
0.5 mm 50 Ω Microstrip Line
C2, C6, C8 22 pF, NPO/COG
C3, C7, C9 47 nF
C4
T2
T3
T4
27 pF, NPO/COG
0.5 pF
R1, R2 = 2.7 KΩ
C10
Board Material: Glass/Epoxy, ε = 4.45,
Thickness = 0.5 mm
r
NOTE: For PCS/DCS1900 applications, the following components are used.
C5 = 2.7 pF, 0603 NPO/COG
L2 = 1.5 nH, Toko 2012
T3 = 1 mm 50 Ω Microstrip Line
Figure 1. Reference Circuit Configuration
MRFIC1818
2
MOTOROLA RF DEVICE DATA
D
D
D
D
5
6
7
8
G
S
S
V
BAT
4
V
reg
3.0 V
3.0 V
3
VRAMP
IDLE
R3
0 V
0 V
2
1
C18
C15
C14
1
2
14
13
Q1
C19
R5
C16
C17
3
4
5
12
11
–4.0 V
R2
R1
CR1
C13
10
9
6
7
C11
V
TUNE
L1
G
8
8
9
T4
C1
7
6
5
4
3
2
1
U2
10
11
C2
T1
C3
R4
T3
C10
C9
C12
12
13
14
15
16
C4
RF
OUT
NC
NC
T2
C6
RF IN
NC
IN
L2
U1
C1
6.8 nF
C14, C15 1 µF
R3, R4 100 Ω
C2, C9, C10 22 pF, 0603 NPO/COG
C3, C11 47 nF
C18
CR1
L1
1 µF
MMBD701LT1
R5
T1
T2
T3
T4
U1
U2
470 Ω
2 mm 25 Ω Microstrip Line
5 mm 50 Ω Microstrip Line
8 mm 40 Ω Microstrip Line
1 mm 40 Ω Microstrip Line
MRFIC1818
C4
C6
C12
27 pF, 0603 NPO/COG
3.9 pF, 0603 NPO/COG
220 nF
18 nH, Coilcraft or 20 mm
50 Ω Microstrip Line
1.8 nH, Toko 2012
or 5 mm 50 Ω Line
MMSF4N01HD
L2
C13, C16, C17, C19 1 µF
Q1
MC33169 (–4 V Version)
R1, R2 2.7 kΩ
Board Material: Glass/Epoxy, ε = 4.45,
Thickness = 0.5 mm
r
NOTE: For PCS/DCS1900 applications, the following
component values are changed.
C6 = 2.7 pF, 0603 NPO/COG
L2 = 1.5 nH, Toko 2012
T3 = 1 mm 50 Ω Microstrip Line
Figure 2. DCS1800 Applications Circuit Configuration
MOTOROLA RF DEVICE DATA
MRFIC1818
3
Typical Characteristics
35
34
33
32
46
T
= –35°C
44
42
40
38
A
T
= –35°C
A
25°C
25
°C
85°C
85°
C
P
= 3 dBm
P
V
V
= 3 dBm
in
in
31
30
36
34
V
V
, V
V
= 4.8 V
, V
V
= 4 V
D1 D2, D3
D1 D2, D3
= –4 V
= –4 V
SS
SS
1.7
1.72
1.74
1.76
1.78
1.8
1.8
1.8
1.7
1.72
1.74
1.76
1.78
1.8
1.8
6
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 3. Output Power versus Frequency
Figure 4. Power Added Efficiency
versus Frequency
36
35
34
44
42
V
= V = 5.6 V
D2
D1
T
= –35°C
A
4.8 V
25°C
4 V
85°C
40
38
P
= 3 dBm
= 25°C
= –4 V
33
32
P
V
V
= 3 dBm
in
in
T
, V
V
= 4.8 V
A
D1 D2, D3
V
= –4 V
SS
SS
1.7
1.72
1.74
1.76
1.78
1.7
1.72
1.74
1.76
1.78
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 5. Output Power versus Frequency
Figure 6. Power Added Efficiency
versus Frequency
40
30
37
36
25°C AND 85°C
20
10
T
= –35°C
A
T
= –35°C
A
0
–10
–20
–30
–40
25°C
85°C
35
34
f = 1.75 GHz
P
V
V
= 3 dBm
in
P
V
= 3 dBm
= –4 V
in
SS
, V = 5.6 V
V
D1 D2, D3
SS
–50
–60
= –4 V
0
1
2
3
4
5
1.7
1.72
1.74
1.76
1.78
V
, V , DRAIN VOLTAGE (VOLTS)
f, FREQUENCY (GHz)
D1 D2
Figure 7. Output Power versus Frequency
Figure 8. Output Power versus Drain Voltage
MRFIC1818
4
MOTOROLA RF DEVICE DATA
Typical Characteristics
45
40
35
30
25
20
15
10
5
35
33
31
29
27
25
23
21
T
= –35°C
A
85°C
T
= –35°C
A
25°C
25°C
85°C
f = 1.75 GHz
f = 1.75 GHz
19
P
V
= 3 dBm
= –4 V
V
, V
= –4 V
V
= 4.8 V
in
SS
D1 D2, D3
V
17
15
–20
SS
0
0
1
2
3
4
5
6
–15
–10
–5
P , INPUT POWER (dBm)
in
0
5
10
V
, V , DRAIN VOLTAGE (VOLTS)
D1 D2
Figure 9. Power Added Efficiency versus
Drain Voltage
Figure 10. Output Power versus Input Power
45
40
35
30
25
20
15
50
48
46
44
42
40
38
36
34
T
= –35°C
A
25
°
C
85
°
C
25°C
T
= –35°C
A
85°C
f = 1.75 GHz
f = 1.75 GHz
10
5
V
, V = 4.8 V
= –4 V
V
D1 D2, D3
P
V
= 3 dBm
= –4 V
in
SS
V
SS
32
30
0
–20
–15
–10
–5
0
5
10
0
2
4
6
P
, INPUT POWER (dBm)
V
, V , DRAIN VOLTAGE (VOLTS)
in
D1 D2
Figure 11. Power Added Efficiency versus
Input Power
Figure 12. Second Harmonic versus
Drain Voltage
41
36
35.5
35
39
37
35
33
31
T
= –35°C
A
T
= –35°C
A
25
°
C
C
25°C
85°
34.5
34
85°C
29
27
25
f = 1.75 GHz
P
V
V
= 3 dBm
in
P
V
= 3 dBm
= –4 V
, V , V
= 4.8 V
in
SS
D1 D2 D3
= –4 V
SS
33.5
0
2
4
6
1.85
1.86
1.87
1.88
1.89
1.9
1.91
V
, V , DRAIN VOLTAGE (VOLTS)
f, FREQUENCY (GHz)
D1 D2
Figure 13. Third Harmonic versus
Drain Voltage
Figure 14. Output Power Versus Frequency –
PCS Band
MOTOROLA RF DEVICE DATA
MRFIC1818
5
Typical Characteristics
50
47
45
43
41
39
5.6 V
T
= –35°C
A
45
40
35
V
, V , V = 4.8 V
D1 D2 D3
25
°
C
C
85°
f = 1880 MHz
Carrier BW = 30 kHz
Channel BW = 30 kHz
P
V
V
= 3 dBm
in
30
, V
= –4 V
V
= 4.8 V
D1 D2, D3
SS
Temp = 25°C
25
1.85
1.86
1.87
1.88
1.89
1.9
1.91
10
15
20
25
30
35
f, FREQUENCY (GHz)
P
, OUTPUT POWER (dBm)
out
Figure 15. Power Added Efficiency versus
Frequency – PCS Band
Figure 16. CDMA ACPR at 885 kHz Offset versus
Output Power
50
49
48
47
46
Table 1. Optimum Loads Derived from
Circuit Characterization
V
, V , V
= 5.6 V
D1 D2 D3
Z
Z
*
in
OHMS
OL
OHMS
f
4.8 V
R
jX
R
jX
MHz
1710
1720
1730
1740
1750
1760
1770
1780
1785
9.19
9.35
9.50
9.65
9.60
9.42
9.11
8.77
8.54
–30.10
–29.60
–29.30
–29.10
–29.00
–28.79
–28.60
–28.30
–28.15
6.00
5.96
5.88
5.80
5.75
5.67
5.60
5.51
5.45
3.80
3.71
3.60
3.46
3.33
3.20
3.07
2.93
2.79
f = 1880 MHz
Carrier BW = 30 kHz
Channel BW = 30 kHz
Temp = 25
°C
10
15
20
25
30
35
P
, OUTPUT POWER (dBm)
out
Z
Z
represents the input impedance of the device.
* represents the conjugate of the optimum output load to present
to the device.
in
OL
Figure 17. CDMA ACPR at 1980 kHz Offset
versus Output Power
Table 2. Optimum Loads Derived from
Circuit Characterization – PCS Board
Z
Z
*
in
OHMS
OL
OHMS
f
R
jX
R
jX
MHz
1850
1860
1870
1880
1890
1900
1910
3.92
4.01
4.08
4.19
4.29
4.31
4.37
–43.30
–43.56
–43.78
–44.00
–44.29
–44.49
–44.81
7.70
7.64
7.57
7.51
7.50
7.44
7.35
0.39
0.23
0.15
0.07
–0.04
–0.06
–0.19
Z
Z
represents the input impedance of the device.
in
* represents the conjugate of the optimum output load to present
OL
to the device.
MRFIC1818
6
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
Design Philosophy
The MRFIC1818 is a 3–stage Integrated Power Amplifier
designed for use in cellular phones, especially for those used
in DCS1800 (PCN) 4.8 V operation. With matching circuit
modifications, it is also applicable for use in DCS1900 (PCS)
equipment. Due to the fact that the input, output and some of
the interstage matching is accomplished off chip, the device
can be tuned to operate anywhere within the 1500 to
2000 MHz frequency range. Typical performance at different
battery voltages is:
space. For applications where the amplifier is operated close
to saturation, such as TDMA amplifiers, the gate bias can be
set with resistors. Variations in process and tempera–ture
will not affect amplifier performance significantly in these ap-
plications. The values shown in the Figure 1 will set quies–
cent currents of 20 to 40 mA for the first stage, 150 to 300 for
the second stage and 400 to 800 mA for the final stage. For
linear modes of operation which are required for CDMA am-
plifiers, the quiescent current must be more carefully con-
trolled. For these applications, the V pins can be referenced
G
•
•
•
36 dBm @ 6.0 V
34.5 dBm @ 4.8 V
32.0 dBm @ 3.6 V
to some tunable voltage which is set at the time of radio
manufacturing. Less than 1 mA is required in the divider net-
work so a DAC can be used as the voltage source.
This capability makes the MRFIC1818 suitable for portable
cellular applications such as:
Power Control Using the MC33169
The MC33169 is a dedicated GaAs power amplifier sup-
•
•
•
6V and 4.8 V DCS1800 Class I
6V and 4.8 V PCS tag5
port IC which provides the –4 V required for V , an N–MOS
SS
drain switch interface and driver and power supply sequenc-
ing. The MC33169 can be used for power control in applica-
tions where the amplifier is operated in saturation since the
3.6 V DCS1800 Class II
RF Circuit Considerations
output power in non–linear operation is proportional to V
.
D2
The MRFIC1818 can be tuned by changing the values
and/or positions of the appropriate external components. Re-
fer to Figure 2, a typical DCS1800 Class I applications circuit.
The input match is a shunt–L, series–C, High–pass structure
and can be retuned as desired with the only limitation being
the on–chip 6 pF blocking capacitor. For saturated applica-
tions such as DCS1800 and DCS1900, the input match
should be optimized at the rated RF input power. Interstage
matching can be optimized by changing the value and/or
This provides a very linear and repeatable power control
transfer function. This technique can be used open loop to
achieve 40–45 dB dynamic range over process and temper-
ature variation. With careful design and selection of calibra-
tion points, this technique can be used for DCS1800 control
where 30 dB dynamic range is required, eliminating the need
for the complexity and cost of closed–loop control. The trans-
mit waveform ramping function required for systems such as
DCS1800 can be implemented with a simple Sallen and Key
filter on the MC33169 control loop. The amplifier is then
position of the decoupling capacitor on the V and V sup-
D1 D2
ply lines. Moving the capacitor closer to the device or reduc-
ing the value increases the frequency of resonance with the
in–ductance of the device’s wirebonds and leadframe pin.
Output matching is accomplished with a one–stage low–
pass network as a compromise between bandwidth and har-
monic rejection. Implementation is through chip capacitors
mounted along a 30 or 50 microstrip transmission line. Val-
ues and positions are chosen to present a 2.5 W loadline to
the device while conjugating the device output parasitics.
The network must also properly terminate the second and
third harmonics to optimize efficiency and reduce harmonic
output. Low–Q commercial chip capacitors are used for the
shunt capacitors, as shown in Figure 2. Loss in circuit traces
must also be considered. The output transmission line and
the bias supply lines should be at least 0.6 mm in width to
accommodate the peak circulating currents which can be as
high as 2 amperes under worst case conditions. The bias
supply line which supplies the output should include an RF
choke of at least 18 nH, surface mount solenoid inductors or
quarter wave microstrip lines. Discrete inductors will usually
give better efficiency and conserve board space. The DC
blocking capacitor required at the output of the device is best
mounted at the 50 impedance point in the circuit where the
RF current is at a minimum and the capacitor loss will have
less effect.
ramped on as the V
pin is taken from 0 V to 3 V. To im-
RAMP
plement the different power steps required for DCS1800, the
pin is ramped between 0 V and the appropriate volt-
V
RAMP
age between 0 V and 3 V for the desired output power. For
closed–loop configurations using the MC33169,
MMSF4N01HD N–MOS switch and the MRFIC1818 provide
a typical 1 MHz 3 dB loop bandwidth. The STANDBY pin
must be enabled (3 V) at least 800 µs before the V
goes high and disabled (0 V) at least 20 µs before the V
pin goes low. This STANDBY function allows for the enabling
of the MC33169 one burst before the active burst thus reduc-
ing power consumption.
pin
RAMP
RAMP
Conclusion
The MRFIC1818 offers the flexibility in matching circuitry
and gate biasing required for portable cellular applications.
Together with the MC33169 support IC, the device offers an
efficient system solution for TDMA applications such as
DCS1800 where saturated amplifier operation is used.
For more information about the power control using the
MC33169, refer to application note AN1599, “Power Control
with the MRFIC0913 GaAs Integrated Power Amplifier and
MC33169 Support IC.”
Evaluation Boards
Two versions of the MRFIC1818 evaluation board are
available. Order MRFIC1818DCSTF for the 1.8 GHz version
and order MRFIC1818PCSTF for the 1.9 GHz version. For a
complete list of currently available boards and ones in devel-
opment for newly introduced product, please contact your lo-
cal Motorola Distributor or Sales Office.
Biasing Considerations
Gate bias lines are tied together and connected to the V
SS
voltage, allowing gate biasing through use of external resis-
tors or positive voltages. This allows setting the quiescent
current of all stage in the same time while saving some board
MOTOROLA RF DEVICE DATA
MRFIC1818
7
PACKAGE DIMENSIONS
h X 45
A
D
E2
1
16
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE –H–.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
D1
8
9
E1
B
BOTTOM VIEW
8X E
M
S
bbb
C B
6. DATUMS –A– AND –B– TO BE DETERMINED AT
DATUM PLANE –H–.
b1
DATUM
PLANE
H
MILLIMETERS
c
c1
DIM
A
A1
A2
D
D1
E
E1
E2
L
MIN
MAX
2.350
0.152
2.100
7.100
5.180
9.150
7.100
5.180
0.720
A2
A
2.000
0.025
1.950
6.950
4.372
8.850
6.950
4.372
0.466
b
M
S
aaa
C A
DETAIL Y
SEATING
PLANE
C
SECT W–W
L1
b
b1
c
c1
e
0.250 BSC
0.300
0.300
0.180
0.180
0.432
0.375
0.279
0.230
ccc
C
0.800 BSC
W
W
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DETAIL Y
CASE 978–02
ISSUE A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
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