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元器件品牌
MTD8N06E
[MOTOROLA]
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM; TMOS功率场效应晶体管8.0安培60伏特的RDS（on ） = 0.12 OHM
元器件型号：
MTD8N06E
生产厂家：
MOTOROLA, INC
描述和应用：
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
TMOS功率场效应晶体管8.0安培60伏特的RDS（on ） = 0.12 OHM
晶体 晶体管 功率场效应晶体管
PDF文件：
总10页 (文件大小：189K)
下载文档：
下载PDF数据表文档文件
型号参数：MTD8N06E参数
查看货源
MTD907
Ethernet Encoder/decoder and 10BaseT Transceiver with Built-in Waveform Shaper
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19
ETC
MTD907
Ethernet Encoder/decoder and 10BaseT Transceiver with Built-in Waveform Shaper
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35
ETC
MTD91A-SERIES
Trigger Device
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156
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0
INFINEON
MTD9D0P03H8
P-Channel Enhancement Mode Power MOSFET
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156
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1
CYSTEKEC
MTD9D0P03H8-0-T6-G
P-Channel Enhancement Mode Power MOSFET
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156
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1
CYSTEKEC
MTD9N10D
POWER MOSFET 9 AMPS, 100 VOLTS
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on line
156
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44
ONSEMI
MTD9N10E
POWER MOSFET 9 AMPS, 100 VOLTS
Warning
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156
-
25
ONSEMI
MTD9N10E
TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
Warning
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156
-
49
MOTOROLA
MTD9N10E
9A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
Warning
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156
-
0
ROCHESTER
MTD9N10E1
POWER MOSFET 9 AMPS, 100 VOLTS
Warning
: Undefined variable $rtag in
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on line
156
-
17
ONSEMI
MTD9N10E1
9A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
Warning
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156
-
0
ROCHESTER
MTD9N10E-1
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
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156
-
0
MOTOROLA
MTD9N10E-1
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Warning
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on line
156
-
0
MOTOROLA
MTD9N10EG
9A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, GREEN, CASE 369A-13, DPAK-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
ONSEMI
MTD9N10ET4
POWER MOSFET 9 AMPS, 100 VOLTS
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
19
ONSEMI
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