MTP12N10L [MOTOROLA]
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;型号: | MTP12N10L |
厂家: | MOTOROLA |
描述: | Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 局域网 开关 脉冲 晶体管 |
文件: | 总1页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
MTP12N20A
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
MTP12N20A16A
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
MTP12N20AF
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
MTP12N20C
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
MTP12N20D1
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
MTP12N20L
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
MTP12N20N
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
MTP12N20T
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
©2020 ICPDF网 联系我们和版权申明