MTP29N15E [MOTOROLA]
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM; TMOS功率FET 29安培150伏的RDS（on ） = 0.07 OHM
| 型号： | MTP29N15E |
| 厂家： | 
MOTOROLA |
| 描述： | TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MTP29N15E/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
29 AMPERES
150 VOLTS
R
= 0.07 OHM
DS(on)
•
•
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
•
•
Diode is Characterized for Use in Bridge Circuits
N–Channel
I
and V
Specified at Elevated Temperature
DSS
DS(on)
D
G
CASE 221A–06,
TO–220AB
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
150
Unit
Vdc
Vdc
Drain–to–Source Voltage
V
DSS
Drain–to–Gate Voltage (R
= 1.0 MΩ)
V
DGR
150
GS
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (t ≤ 10 ms)
V
± 20
± 40
Vdc
Vpk
GS
V
GSM
p
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (t ≤ 10 µs)
I
I
29
19
102
Adc
Apk
D
D
I
p
DM
Total Power Dissipation
Derate above 25°C
P
D
125
1.0
Watts
W/°C
Operating and Storage Temperature Range
T , T
stg
–55 to 150
421
°C
J
Single Pulse Drain–to–Source Avalanche Energy — STARTING T = 25°C
E
AS
mJ
J
(V
DD
= 25 Vdc, V
= 10 Vdc, PEAK I = 29 Apk, L = 1.0 mH, R = 25
)
GS
L
G
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
R
1.0
62.5
°C/W
°C
θJC
θJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
T
260
L
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
V
Vdc
(BR)DSS
(V
= 0 Vdc, I = 0.25 mAdc)
150
—
—
TBD
—
—
GS
D
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V
DS
(V
DS
= 150 Vdc, V
= 150 Vdc, V
= 0 Vdc)
= 0 Vdc, T =125°C)
—
—
—
—
10
100
GS
GS
J
Gate–Body Leakage Current (V
GS
= ±20 Vdc, V
= 0 Vdc)
I
—
—
100
nAdc
Vdc
DS
GSS
(1)
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
(V
= V , I = 250 µAdc)
2.0
—
2.7
TBD
4.0
—
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
Static Drain–to–Source On–Resistance
R
V
Ohms
DS(on)
(V
GS
= 10 Vdc, I = 14.5 Adc)
—
0.055
0.07
D
Drain–to–Source On–Voltage
Vdc
DS(on)
(V
GS
(V
GS
= 10 Vdc, I = 29 Adc)
—
—
—
—
2.4
2.1
D
= 10 Vdc, I = 14.5 Adc, T = 125°C)
D
J
Forward Transconductance (V
= 8.6 Vdc, I = 14.5 Adc)
g
FS
10
18
—
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
2250
455
3150
910
iss
(V
DS
= 25 Vdc, V
GS
f = 1.0 MHz)
= 0 Vdc,
Output Capacitance
C
oss
Transfer Capacitance
C
133
190
rss
(2)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
t
—
—
—
—
—
—
—
—
17.5
108
90
40
220
180
170
110
—
ns
d(on)
(V
DD
= 75 Vdc, I = 29 Adc,
D
Rise Time
t
r
V
= 10 Vdc,
GS
G
Turn–Off Delay Time
Fall Time
t
d(off)
R
= 9.1 Ω)
t
f
85
Gate Charge
Q
T
Q
1
Q
2
Q
3
78
nC
12
(V
DS
= 120 Vdc, I = 29 Adc,
D
V
GS
= 10 Vdc)
37
—
23
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
V
Vdc
ns
SD
(I = 29 Adc, V
= 0 Vdc)
—
—
0.92
TBD
1.3
—
S
GS
= 0 Vdc, T = 125°C)
(I = 29 Adc, V
S
GS
J
Reverse Recovery Time
t
—
—
—
—
174
140
34
—
—
—
—
rr
t
a
(I = 29 Adc, V
= 0 Vdc,
S
GS
dI /dt = 100 A/µs)
S
t
b
Reverse Recovery Stored Charge
Q
1.4
µC
RR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
L
D
nH
—
—
3.5
4.5
—
—
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
—
7.5
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
V
J
G
T
U
V
D
N
Z
0.080
2.04
CASE 221A–06
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data
3
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MTP29N15E/D
◊
相关型号：
MTP2N45
Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
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