MUR190E/D [MOTOROLA]
SWITCHMODE? Ultrafast Power Rectifier ; 开关模式?超快功率整流器\n型号: | MUR190E/D |
厂家: | MOTOROLA |
描述: | SWITCHMODE? Ultrafast Power Rectifier
|
文件: | 总6页 (文件大小:127K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by MUR190E/D
SEMICONDUCTOR TECHNICAL DATA
Ultrafast “E’’ Series with High Reverse
Energy Capability
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
MUR1100E is a
Motorola Preferred Device
•
•
20 mjoules Avalanche Energy Guaranteed
ULTRAFAST
RECTIFIERS
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
1.0 AMPERE
900–1000 VOLTS
•
•
•
•
•
•
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 Volts
Mechanical Characteristics:
•
•
•
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
CASE 59–04
•
Lead and Mounting Surface Temperature for Soldering
Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
•
•
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a “RL’’
suffix to the part number
•
•
Polarity: Cathode Indicated by Polarity Band
Marking: U190E, U1100E
MAXIMUM RATINGS
MUR
Rating
Symbol
190E
1100E
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
900
1000
Volts
RRM
RWM
R
V
Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 1)
I
1.0 @ T = 95°C
Amps
Amps
°C
F(AV)
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
I
35
FSM
Operating Junction Temperature and Storage Temperature
T , T
J
65 to +175
stg
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
R
See Note 1
°C/W
θJA
SWITCHMODE is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS
MUR
Rating
Symbol
190E
1100E
Unit
Maximum Instantaneous Forward Voltage (1)
v
Volts
F
(i = 1.0 Amp, T = 150°C)
1.50
1.75
F
F
J
J
(i = 1.0 Amp, T = 25°C)
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, T = 100°C)
i
R
µA
600
10
J
(Rated dc Voltage, T = 25°C)
J
Maximum Reverse Recovery Time
t
rr
ns
(I = 1.0 Amp, di/dt = 50 Amp/µs)
100
75
F
(I = 0.5 Amp, i = 1.0 Amp, I
REC
= 0.25 Amp)
F
R
Maximum Forward Recovery Time
(I = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V)
F
t
fr
75
ns
Controlled Avalanche Energy (See Test Circuit in Figure 6)
W
AVAL
10
mJ
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
2
Rectifier Device Data
ELECTRICAL CHARACTERISTICS
1000
100
10
20
T
= 175°C
J
10
7.0
5.0
100°C
1.0
3.0
2.0
T
= 175
°C
25°C
25°C
J
0.1
100°C
0.01
1.0
0.7
0.5
0
100
200 300 400
500
600 700 800 900 1000
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
0.3
0.2
estimated from these same curves if V is sufficiently below rated V
.
R
R
5.0
4.0
3.0
2.0
0.1
0.07
0.05
RATED V
R
R
= 50°C/W
JA
0.03
0.02
dc
SQUARE WAVE
1.0
0
0.01
0.3 0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
5.0
2.3
0
50
100
150
200
250
v
INSTANTANEOUS VOLTAGE (VOLTS)
F,
T , AMBIENT TEMPERATURE (
°C)
A
Figure 1. Typical Forward Voltage
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
20
10
5.0
10
I
PK
T
J
= 25°C
(CAPACITIVE LOAD)
20
I
AV
4.0
3.0
2.0
dc
7.0
5.0
T
= 175°C
J
SQUARE WAVE
1.0
0
3.0
2.0
0
0.5
1.0
1.5
2.0
2.5
0
10
20
V , REVERSE VOLTAGE (VOLTS)
R
30
40
50
I
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
Rectifier Device Data
3
+V
DD
I
40 mH COIL
L
BV
DUT
V
D
I
D
MERCURY
SWITCH
I
D
I
L
DUT
S
1
V
DD
t
t
t
2
t
0
1
Figure 6. Test Circuit
Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A mercury
switch was used instead of an electronic switch to simulate a
noisy environment when the switch was being opened.
ponent resistances. Assuming the component resistive ele-
ments are small Equation (1) approximates the total energy
transferred to the diode. It can be seen from this equation
that if the V
voltage is low compared to the breakdown
DD
voltage of the device, the amount of energy contributed by
the supply during breakdown is small and the total energy
can be assumed to be nearly equal to the energy stored in
When S is closed at t the current in the inductor I ramps
1
0
L
up linearly; and energy is stored in the coil. At t the switch is
1
opened and the voltage across the diode under test begins to
rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
the coil during the time when S was closed, Equation (2).
1
The oscilloscope picture in Figure 8, shows the information
obtained for the MUR8100E (similar die construction as the
MUR1100E Series) in this test circuit conducting a peak cur-
rent of one ampere at a breakdown voltage of 1300 volts,
and using Equation (2) the energy absorbed by the
MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this condi-
tion, the new “E’’ series provides added protection against
those unforeseen transient viruses that can produce unex-
plained random failures in unfriendly environments.
BV
and the diode begins to conduct the full load current
DUT
which now starts to decay linearly through the diode, and
goes to zero at t .
2
By solving the loop equation at the point in time when S is
1
opened; and calculating the energy that is transferred to the
diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
power supply while the diode is in
DD
2
breakdown (from t to t ) minus any losses due to finite com-
1
CHANNEL 2:
EQUATION (1):
CH1 500V
CH2 50mV
A
20 s
953 V VERT
I
L
BV
0.5 AMPS/DIV.
2
DUT
–V
1
2
W
LI
LPK
AVAL
BV
DUT DD
CHANNEL 1:
V
DUT
EQUATION (2):
500 VOLTS/DIV.
2
LPK
1
2
W
LI
AVAL
TIME BASE:
20 s/DIV.
1
ACQUISITIONS
SAVEREF SOURCE
217:33 HRS
STACK
CH1
CH2
REF
REF
Figure 8. Current–Voltage Waveforms
4
Rectifier Device Data
NOTE 1 — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to
ambient(R
)forthemountingsshownistobeused
θJA
as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR R
IN STILL AIR
θJA
Lead Length, L
Mounting
Method
1/8
52
67
1/4
65
80
50
1/2
72
87
Units
°C/W
°C/W
°C/W
1
2
3
R
θJA
MOUNTING METHOD 1
L
L
MOUNTING METHOD 2
L
L
Vector Pin Mounting
MOUNTING METHOD 3
L = 3/8″
Board Ground Plane
P.C. Board with
1–1/2″ X 1–1/2″ Copper Surface
Rectifier Device Data
5
PACKAGE DIMENSIONS
NOTES:
B
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO–41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
MILLIMETERS
INCHES
D
DIM
A
B
D
K
MIN
5.97
2.79
0.76
27.94
MAX
6.60
3.05
0.86
–––
MIN
MAX
0.260
0.120
0.034
–––
K
0.235
0.110
0.030
1.100
A
K
CASE 59–04
ISSUE M
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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