PBF259SRLRE [MOTOROLA]
500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92;型号: | PBF259SRLRE |
厂家: | MOTOROLA |
描述: | 500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 晶体 小信号双极晶体管 |
文件: | 总4页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Order this document
by PBF259/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
3
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
PBF259,S
300
Unit
Vdc
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
V
CEO
V
CBO
V
EBO
300
Vdc
5.0
Vdc
Collector Current — Continuous
I
C
500
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
Watts
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
V
300
300
5.0
—
—
—
—
50
20
50
Vdc
Vdc
(BR)CEO
C
B
Collector–Base Breakdown Voltage
(I = 10 Adc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 100 Adc, I = 0)
V
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 250 Vdc, I = 0)
I
nAdc
nAdc
nAdc
CBO
CB
Emitter Cutoff Current
(V = 3.0 Vdc)
E
I
—
EBO
EB
Collector Cutoff Current
(V = 10 Vdc)
I
—
CEO
CE
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
h
FE
—
(I = 20 mAdc, V
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
PBF259S
All Types
All Types
60
25
25
—
—
—
C
CE
(I = 1.0 mAdc, V
C
CE
CE
(I = 30 mAdc, V
C
Collector–Emitter Saturation Voltage
(I = 30 mAdc, I = 1.5 mAdc)
V
Vdc
CE(sat)
—
—
0.5
1.0
C
B
(I = 30 mAdc, I = 60 mAdc
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
40
—
—
MHz
pF
T
(I = 10 mAdc, V
C CE
= 10 Vdc, f = 20 MHz)
Output Capacitance
(V = 20 Vdc, I = 0, f = 1.0 MHz)
C
3.0
obo
CB
E
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
100
50
V
= 10 Vdc
CE
T
= +125°C
J
25°C
–55°C
30
20
1.0
2.0
3.0
5.0
7.0
, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
I
C
Figure 1. DC Current Gain
100
50
100
70
50
C
eb
20
10
T
= 25°C
= 20 V
J
V
CE
f = 20 MHz
30
20
5.0
C
2.0
1.0
cb
10
1.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V
, REVERSE VOLTAGE (VOLTS)
I
, COLLECTOR CURRENT (mA)
R
C
Figure 2. Capacitances
Figure 3. Current–Gain — Bandwidth Product
1.4
1.2
1.0
500
10
1.0 ms
µs
100 µs
T
= 25°C
J
T
= 25
°
C
A
200
100
50
T
= 25°C
C
100 ms
0.8
0.6
0.4
0.2
0
V
@ I /I = 10
C B
BE(sat)
20
10
CURRENT LIMIT
THERMAL LIMIT
V
@ V
CE
= 10 V
BE(on)
5.0
(PULSE CURVES @ T = 25
°C)
C
SECOND BREAKDOWN LIMIT
2.0
1.0
0.5
CURVES APPLY
BELOW RATED V
V
@ I /I = 10
C B
CE(sat)
PBF259S
PBF259
CEO
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
0.5
1.0
2.0
5.0
10
20
50
100 200
500
I
, COLLECTOR CURRENT (mA)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
CE
Figure 4. “On” Voltages
Figure 5. Maximum Forward Bias
Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
PBF259/D
◊
相关型号:
PBF259SRLRM
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MOTOROLA
PBF259SZL1
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MOTOROLA
PBF493RL1
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MOTOROLA
©2020 ICPDF网 联系我们和版权申明