S2800F-W [MOTOROLA]
Silicon Controlled Rectifier, 10A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB;
| 型号： | S2800F-W |
| 厂家： | 
MOTOROLA |
| 描述： | Silicon Controlled Rectifier, 10A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB 可控硅 |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by S2800/D
SEMICONDUCTOR TECHNICAL DATA
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
•
•
•
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Blocking Voltage to 800 Volts
G
A
K
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
Volts
(1)
Peak Repetitive Forward and Reverse Blocking Voltage
V
RRM
V
DRM
(T = 25 to 100°C, Gate Open)
J
F
50
A
B
D
M
N
100
200
400
600
800
S2800
Peak Non-repetitive Reverse Voltage and
Non-Repetitive Off-State Voltage
V
RSM
V
DSM
Volts
(1)
F
75
A
B
D
M
N
125
250
500
700
900
S2800
RMS Forward Current
(All Conduction Angles)
I
10
Amps
Amps
T(RMS)
T
C
= 75°C
Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, T = 80°C)
I
100
40
C
TSM
2
I t
2
A s
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power (t
Forward Average Gate Power
10 µs)
P
16
Watts
Watt
°C
GM
P
0.5
G(AV)
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +100
–40 to +150
J
T
°C
stg
1. V
and V
for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate
RRM
DRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
2
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
, I
Min
Typ
Max
Unit
Peak Forward or Reverse Blocking Current
I
DRM RRM
(V
AK
= Rated V
or V
, Gate Open)
RRM
T
C
T
C
= 25°C
= 100°C
—
—
—
—
10
2
µA
mA
DRM
Instantaneous On-State Voltage,
(I = 30 A Peak, Pulse Width
V
—
—
—
—
—
—
1.7
2
Volts
mA
Volts
mA
µs
T
1 ms, Duty Cycle
2%)
TM
Gate Trigger Current (Continuous dc)
(V = 12 Vdc, R = 30 Ohms)
I
8
15
1.5
20
—
—
GT
D
L
Gate Trigger Voltage (Continuous dc)
V
GT
0.9
10
1.6
25
(V = 12 Vdc, R = 30 Ohms)
D
L
Holding Current
I
H
(Gate Open, V = 12 Vdc, I = 150 mA)
D
T
Gate Controlled Turn-On Time
(V = Rated V , I = 2 A, I = 80 mA)
GR
t
gt
D
DRM TM
Circuit Commutated Turn-Off Time
(V = V , I = 2 A, Pulse Width = 50 µs,
t
q
µs
D
DRM TM
dv/dt = 200 V/µs, di/dt = 10 A/µs, T = 75°C)
C
Critical Rate-of-Rise of Off-State Voltage
dv/dt
—
100
—
V/µs
(V = Rated V
D
, Exponential Rise, T = 100°C)
DRM
C
FIGURE 2 – POWER DISSIPATION
FIGURE 1 – CURRENT DERATING
12
HALF-WAVE
CURRENT WAVEFORM: A SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE
MAXIMUM
100
90
10
8
I
T(RMS)
MAXIMUM
6
I
T(AV)
HALF-WAVE
CURRENT WAVEFORM: A SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE
4
80
70
2
0
RMS CURRENT
AV CURRENT
0
2
4
6
8
10
0
2
4
6
8
10
I
, I
, MAXIMUM ON-STATE CURRENT (AMP)
I
, I
, ON-STATE CURRENT (AMPS)
T(AV) T(RMS)
T(AV) T(RMS)
2
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
SEATING
PLANE
–T–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
MIN
MILLIMETERS
4
3
STYLE 3:
PIN 1. CATHODE
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.055
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.39
5.33
3.04
2.79
1.39
6.47
1.27
–––
Q
A
K
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
2. ANODE
3. GATE
4. ANODE
1
2
U
H
Z
R
L
V
J
G
T
U
V
D
N
Z
0.080
2.04
CASE 221A-04
(TO–220AB)
3
Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
S2800/D
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