T2322D-VA [MOTOROLA]
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| 型号： | T2322D-VA |
| 厂家： | 
MOTOROLA |
| 描述： | 暂无描述 可控硅 三端双向交流开关 |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by T2322/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for ac power switching. The gate sensitivity of these triacs
permits the use of economical transistorized or integrated circuit control circuits, and
it enhances their use in low-power phase control and load-switching applications.
*Motorola preferred devices
•
•
•
•
Very High Gate Sensitivity
Low On-State Voltage at High Current Levels
Glass-Passivated Chip for Stability
Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
SENSITIVE GATE TRIACs
2.5 AMPERES RMS
200 thru 600 VOLTS
MT2
G
MT2
MT1
MT2
CASE 77-08
MT1
(TO-225AA)
STYLE 5
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Suffix
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage
B
D
M
V
DRM
200
400
600
Volts
(T = 25 to 100°C, Gate Open)
J
T2322, T2323
RMS On-State Current (T = 70°C)
(Full-Cycle Sine Wave 50 to 60 Hz)
I
2.5
Amps
Amps
C
T(RMS)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz)
I
TSM
25
2
I t
2
A s
Circuit Fusing
(t = 8.3 ms)
2.6
Peak Gate Power (1 µs)
P
10
0.15
Watts
Watt
Amp
°C
GM
Average Gate Power (T = 60°C + 38.3 ms)
P
G(AV)
C
Peak Gate Current (1 µs)
I
0.5
GM
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +110
–40 to +150
8
J
T
°C
stg
(2)
Mounting Torque (6-32 Screw)
—
in. lb.
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not
appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Consult factory for lead bending options.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
3.5
60
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
θJA
ELECTRICAL CHARACTERISTICS (T = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(V = Rated V , Gate Open)
I
DRM
T
J
T
J
= 25°C
= 100°C
—
—
—
0.2
10
0.75
µA
mA
D
DRM
Peak On-State Voltage*
(I = 10 A)
V
TM
Volts
T2323 Series
T2322 Series
—
—
1.7
1.7
2.6
2.2
TM
Gate Trigger Current (Continuous dc)
(V = 12 V, R = 30 Ω)
I
mA
GT
D
L
All Modes
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–),I G(+) T2323 Series
T2322 Series
T2323 Series
—
—
—
—
—
—
10
25
40
Gate Trigger Voltage (Continuous dc)
V
GT
Volts
(V = 12 Vdc, R = 30 Ω, T = 25°C)
—
0.15
1
—
2.2
—
D
D
L
L
C
C
(V = V
, R = 125 Ω, T = 100°C)
DRM
Holding Current
(V = 12 V, I
I
—
—
10
1
15
1.8
100
4
30
2.5
—
mA
µs
H
= 150 mA, Gate Open)
D
TM
Gate Controlled Turn-On Time
(V = Rated V , I = 10 A pk, I = 60 mA)
t
gt
D
DRM TM
Critical Rate-of-Rise of Off-State Voltage
(V = Rated V , Exponential Waveform, T = 100°C)
G
dv/dt
V/µs
V/µs
D
DRM
Critical Rate-of-Rise of Commutation Voltage
(V = Rated V , I = 3.5 A pk, Commutating
C
dv/dt(c)
—
D
DRM TM
di/dt = 1.26 A/ms, Gate Unenergized, T = 90°C)
C
*Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
2
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–B–
NOTES:
F
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q
2. CONTROLLING DIMENSION: INCH.
M
INCHES
MILLIMETERS
–A–
DIM
A
B
C
D
F
MIN
MAX
0.435
0.305
0.105
0.026
0.130
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2
3
0.425
0.295
0.095
0.020
0.115
STYLE 5:
PIN 1. MT 1
H
2. MT 2
3. GATE
K
G
H
J
K
M
Q
R
S
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
TYP
TYP
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.055
0.035
0.155
–––
3.76
1.15
0.64
3.69
1.02
4.01
1.39
0.88
3.93
–––
R
M
M
M
0.25 (0.010)
A
B
S
U
V
D 2 PL
M
M
M
0.25 (0.010)
A
B
CASE 77-08
(TO–225AA)
3
Motorola Thyristor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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Literature Distribution Centers:
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T2322/D
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