T2500B-A [MOTOROLA]

200V, 6A, TRIAC, TO-220AB;


型号：	T2500B-A
厂家：	MOTOROLA
描述：	200V, 6A, TRIAC, TO-220AB 可控硅三端双向交流开关
文件：	总4页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by T2500/D

SEMICONDUCTOR TECHNICAL DATA

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies.

•

Blocking Voltage to 800 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

TRIACs

6 AMPERES RMS

200 thru 800 VOLTS

•

MT2

MT1

CASE 221A-04

(TO-220AB)

STYLE 4

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Repetitive Peak Off-State Voltage

(T = –40 to +100°C, Gate Open)

DRM

Volts

T2500 B

200

400

600

800

On-State Current RMS

(Full Cycle Sine Wave 50 to 60 Hz)

(T = +80°C)

0.2

Amps

T(RMS)

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, T = +80°C)

TSM

I t

A s

Circuit Fusing Considerations

(t = 8.3 ms)

Peak Gate Power

(T = +80°C, Pulse Width = 1 µs)

Watts

Watt

Average Gate Power

(T = +80°C, t = 8.3 ms)

G(AV)

Peak Gate Trigger Current (Pulse Width = 10 µs)

Operating Junction Temperature Range

Storage Temperature Range

Amps

°C

GTM

–40 to +100

–40 to +150

stg

°C

1. V

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

Motorola Thyristor Device Data

Motorola, Inc. 1995

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

2.7

°C/W

θJC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

—

Volts

DRM

(Rated V , Gate Open,T = 100°C)

DRM

Maximum On-State Voltage (Either Direction)*

(I = 30 A Peak)

—

Gate Trigger Current (Continuous dc)

(V = 12 Vdc, R = 12 Ohms)

MT2(+), G(+)

—

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

Gate Trigger Voltage (Continuous dc) (All Quadrants)

(V = 12 Vdc, R = 12 Ohms)

Volts

—

0.2

1.25

—

2.5

—

(V = V

, R = 125 Ohms, T = 100°C)

DROM

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 150 mA)

—

Gate Controlled Turn-On Time

—

1.6

—

µs

(Rated V

, I = 10 A , I = 160 mA, Rise Time = 0.1 µs)

DRM

Critical Rate-of-Rise of Commutation Voltage

(Rated V , I = 6 A, Commutating di/dt = 3.2 A/ms,

dv/dt(c)

dv/dt

V/µs

DRM T(RMS)

Gate Unenergized, T = 80°C)

Critical Rate-of-Rise of Off-State Voltage

V/µs

(Rated V

Gate Open, T = 100°C)

, Exponential Voltage Rise,

DRM

T2500B

—

100

—

T2500D,M,N

*Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

QUADRANT DEFINITIONS

MT2(+)

QUADRANT II

QUADRANT I

MT2(+), G(–)

MT2(+), G(+)

ELECTRICAL CHARACTERISTICS of RECOMMENDED

BIDIRECTIONAL SWITCHES

USAGE

General

MBS4991

G(–)

G(+)

PART NUMBER

MBS4992

7.5 – 9.0 V

120 µA Max

0.2 V Max

QUADRANT III

QUADRANT IV

6.0 – 10 V

350 µA Max

0.5 V Max

– V

MT2(–), G(–)

MT2(–), G(+)

Temperature

Coefficient

0.02%/°C Typ

MT2(–)

See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.

Motorola Thyristor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

PLANE

–T–

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

MIN

MILLIMETERS

DIM

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.022

0.562

0.055

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.55

14.27

1.39

5.33

3.04

2.79

1.39

6.47

1.27

–––

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

0.080

2.04

CASE 221A-04

(TO–220AB)

Motorola Thyristor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.

JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

Motorola Thyristor Device Data

T2500/D

◊

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