TIP105 [MOTOROLA]
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS; 达林顿8安培互补硅功率晶体管
| 型号： | TIP105 |
| 厂家： | 
MOTOROLA |
| 描述： | DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by TIP100/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for general–purpose amplifier and low–speed switching applications.
•
High DC Current Gain —
= 2500 (Typ) @ I = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 30 mAdc
h
FE
C
•
V
V
V
= 60 Vdc (Min) — TIP100, TIP105
= 80 Vdc (Min) — TIP101, TIP106
= 100 Vdc (Min) — TIP102, TIP107
CEO(sus)
CEO(sus)
CEO(sus)
•
Low Collector–Emitter Saturation Voltage —
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc
CE(sat)
CE(sat)
C
= 2.5 Vdc (Max) @ I = 8.0 Adc
C
•
•
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
TO–220AB Compact Package
*MAXIMUM RATINGS
*Motorola Preferred Device
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60–80–100 VOLTS
80 WATTS
V
CEO
60
60
80
80
100
100
V
CB
EB
V
5.0
Collector Current — Continuous
Peak
I
C
8.0
15
Adc
Adc
Base Current
I
B
1.0
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
80
0.64
Watts
W/ C
Unclamped Inductive Load Energy (1)
E
30
mJ
Total Power Dissipation @ T = 25 C
A
Derate above 25 C
P
D
2.0
0.016
Watts
W/ C
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
C/W
C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
1.56
62.5
θJC
CASE 221A–06
TO–220AB
θJA
(1) I = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, V
= 20 V, R = 100 Ω.
BE
C
CC
T
T
C
A
4.0 80
3.0 60
2.0 40
T
C
1.0 20
T
A
0
0
0
20
40
60
80
100
C)
120
140
160
T, TEMPERATURE (
°
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 30 mAdc, I = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
60
80
100
—
—
—
C
B
Collector Cutoff Current
I
µAdc
µAdc
mAdc
CEO
CBO
(V
CE
(V
CE
(V
CE
= 30 Vdc, I = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
—
—
—
50
50
50
B
= 40 Vdc, I = 0)
B
= 50 Vdc, I = 0)
B
Collector Cuttoff Current
I
(V
CB
(V
CB
(V
CB
= 60 Vdc, I = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
—
—
—
50
50
50
E
= 80 Vdc, I = 0)
E
= 100 Vdc, I = 0)
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
8.0
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
—
(I = 3.0 Adc, V
= 4.0 Vdc)
= 4.0 Vdc)
1000
200
20,000
—
C
CE
CE
(I = 8.0 Adc, V
C
Collector–Emitter Saturation Voltage
(I = 3.0 Adc, I = 6.0 mAdc)
V
Vdc
Vdc
CE(sat)
—
—
2.0
2.5
C
B
(I = 8.0 Adc, I = 80 mAdc)
C
B
Base–Emitter On Voltage
(I = 8.0 Adc, V = 4.0 Vdc)
V
—
2.8
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
h
fe
4.0
—
(I = 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz)
—
C
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
C
pF
ob
TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
—
—
300
200
CB
E
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
5.0
PNP
NPN
V
CC
– 30 V
t
s
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B
C
3.0
2.0
D , MUST BE FAST RECOVERY TYPE, eg:
1
1N5825 USED ABOVE I
≈
100 mA
100 mA
B
R
C
SCOPE
MSD6100 USED BELOW I
≈
t
B
f
1.0
TUT
V
2
R
B
0.7
0.5
approx
+ 8.0 V
D
1
≈
8.0 k
≈
51
120
0.3
0.2
0
t
r
V
1
V
= 30 V
/I = 250
CC
+ 4.0 V
for t and t , D is disconnected
approx
–12 V
I
I
C B
= I
25 µs
0.1
0.07
0.05
d
r
1
B1 B2
= 25°C
and V = 0
2
T
t , t
≤ 10 ns
t
@ V = 0 V
BE(off)
J
r
f
d
DUTY CYCLE = 1.0%
For NPN test circuit reverse all polarities.
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
0.1
0.07
0.05
(pk)
Z
R
= r(t) R
θ
θ
θ
JC(t)
JC
JC
°C/W MAX
0.05
0.02
= 1.56
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
1
t
2
0.01
0.02
T
– T = P
C
Z
J(pk)
(pk)
θ
JC(t)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.05 0.1
0.01
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
20
10
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
5 ms
5.0
down. Safe operating area curves indicate I – V
limits of
100 µs
C
CE
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1 ms
2.0
1.0
0.5
dc
T
= 150°C
J
BONDING WIRE LIMITED
THERMALLY LIMITED @ T = 25
°
C
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150 C; T is
C
C
J(pk)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
0.2
limits are valid for duty cycles to 10% provided T
CEO
J(pk)
< 150 C. T
may be calculated from the data in Figure 4.
0.1
J(pk)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown
0.05
0.02
1.0
2.0
5.0
10
20
50
100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active–Region Safe Operating Area
10,000
300
5000
T
V
= 25
°
C
T = 25°C
J
C
= 4.0 Vdc
3000
2000
CE
= 3.0 Adc
200
I
C
1000
C
ob
500
100
70
300
200
C
ib
100
50
30
20
50
PNP
NPN
PNP
NPN
10
1.0
30
0.1
2.0
5.0
10
20
50
100
200
500 1000
0.2
0.5
1.0
2.0
5.0
10
20
50
100
f, FREQUENCY (kHz)
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 6. Small–Signal Current Gain
Figure 7. Capacitance
3
Motorola Bipolar Power Transistor Device Data
NPN
PNP
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
20,000
10,000
5000
20,000
10,000
V
= 4.0 V
V
= 4.0 V
CE
CE
7000
5000
T
= 150°C
T = 150°C
J
J
25°C
25°C
3000
2000
3000
2000
–55°C
–55°C
1000
500
1000
700
500
300
200
300
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
I , COLLECTOR CURRENT (AMP)
C
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
3.0
2.6
2.2
3.0
T
= 25°C
T
= 25°C
J
J
2.6
2.2
I
= 2.0 A
4.0 A
6.0 A
I
= 2.0 A
4.0 A
6.0 A
C
C
1.8
1.4
1.0
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
I
, BASE CURRENT (mA)
I , BASE CURRENT (mA)
B
B
Figure 9. Collector Saturation Region
3.0
2.5
2.0
3.0
T
= 25°C
T = 25°C
J
J
2.5
2.0
V
V
@ I /I = 250
C B
BE(sat)
V
BE
@ V = 4.0 V
CE
1.5
1.0
0.5
1.5
1.0
0.5
V
@ V = 4.0 V
CE
BE
V
@ I /I = 250
C B
BE(sat)
V
@ I /I = 250
@ I /I = 250
C B
CE(sat)
C B
CE(sat)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
I , COLLECTOR CURRENT (AMP)
C
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
5
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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