TIP116 [MOTOROLA]
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS; 达林顿2安培互补硅功率晶体管
| 型号： | TIP116 |
| 厂家： | 
MOTOROLA |
| 描述： | DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总6页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by TIP110/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for general–purpose amplifier and low–speed switching applications.
•
High DC Current Gain —
= 2500 (Typ) @ I = 1.0 Adc
Collector–Emitter Sustaining Voltage — @ 30 mAdc
h
FE
C
•
V
V
V
= 60 Vdc (Min) — TIP110, TIP115
= 80 Vdc (Min) — TIP111, TIP116
= 100 Vdc (Min) — TIP112, TIP117
CEO(sus)
CEO(sus)
CEO(sus)
•
Low Collector–Emitter Saturation Voltage —
= 2.5 Vdc (Max) @ I = 2.0 Adc
V
CE(sat)
C
•
•
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
TO–220AB Compact Package
*MAXIMUM RATINGS
*Motorola Preferred Device
TIP110,
TIP115
TIP111,
TIP116
TIP112,
TIP117
Rating
Symbol
Unit
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60–80–100 VOLTS
50 WATTS
Collector–Emitter Voltage
V
CEO
60
60
80
80
100
100
Vdc
Collector–Base Voltage
Emitter–Base Voltage
V
Vdc
Vdc
Adc
CB
EB
V
5.0
Collector Current — Continuous
Peak
I
C
2.0
4.0
Base Current
I
B
50
mAdc
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
50
0.4
Watts
W/ C
Total Power Dissipation @ T = 25 C
A
Derate above 25 C
P
D
2.0
0.016
Watts
W/ C
Unclamped Inductive Load Energy —
Figure 13
E
25
mJ
Operating and Storage Junction
T , T
J stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristics
CASE 221A–06
TO–220AB
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
2.5
C/W
θJC
θJA
Thermal Resistance, Junction to Ambient
R
62.5
C/W
T
T
C
A
3.0 60
2.0 40
T
C
1.0 20
T
A
0
0
0
20
40
60
80
100
C)
120
140
160
T, TEMPERATURE (
°
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 30 mAdc, I = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
60
80
100
—
—
—
C
B
Collector Cutoff Current
I
I
mAdc
mAdc
CEO
CBO
(V
CE
(V
CE
(V
CE
= 30 Vdc, I = 0)
TIP110, TIP115
TIP111, TIP116
TIP112 ,TIP117
—
—
—
2.0
2.0
2.0
B
= 40 Vdc, I = 0)
B
= 50 Vdc, I = 0)
B
Collector Cutoff Current
(V
CB
(V
CB
(V
CB
= 60 Vdc, I = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
—
—
—
1.0
1.0
1.0
E
= 80 Vdc, I = 0)
E
= 100 Vdc, I = 0)
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
2.0
mAdc
—
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 1.0 Adc, V
(I = 2.0 Adc, V
C
= 4.0 Vdc)
= 4.0 Vdc)
1000
500
—
—
C
CE
CE
Collector–Emitter Saturation Voltage
(I = 2.0 Adc, I = 8.0 mAdc)
V
—
2.5
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = 2.0 Adc, V = 4.0 Vdc)
V
BE(on)
—
2.8
C
CE
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
h
fe
25
—
—
(I = 0.75 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
C
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
C
pF
ob
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
—
—
200
100
CB
E
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
4.0
V
V
= 30 V
I
T
= I
= 25°C
CC
– 30 V
CC
/I = 250
B1 B2
J
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
t
s
I
C B
D , MUST BE FAST RECOVERY TYPE, eg:
1
2.0
1N5825 USED ABOVE I
≈
100 mA
100 mA
B
R
C
SCOPE
MSD6100 USED BELOW I
≈
B
TUT
V
2
R
B
t
f
approx
+ 8.0 V
1.0
0.8
D
1
t
≈
8.0 k
51
≈ 60
r
0
0.6
V
1
+ 4.0 V
for t and t , D is disconnected
approx
–12 V
0.4
25 µs
t
@ V
BE(off)
= 0
d
d
r
1
PNP
NPN
and V = 0, R and R are varied
2
B
C
t , t
≤ 10 ns
r
f
to obtain desired test currents.
DUTY CYCLE = 1.0%
0.2
0.04 0.06
For NPN test circuit, reverse diode,
polarities and input pulses.
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I
, COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
P
(pk)
Z
R
= r(t) R
θ
θ
θ
JC(t)
JC
JC
°C/W MAX
0.05
0.07
0.05
= 2.5
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
0.03
0.02
1
1
t
2
T
– T = P
C
Z
0.01
J(pk)
(pk)
θ
JC(t)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.05 0.1
0.01
0.01
0.02
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
ACTIVE–REGION SAFE–OPERATING AREA
10
10
4.0
2.0
4.0
1 ms
5 ms
dc
2.0
T
= 150°C
J
T
= 150°C
dc
J
BONDING WIRE LIMITED
THERMALLY LIMITED
1.0
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T = 25°C (SINGLE PULSE)
C
@ T = 25
°C (SINGLE PULSE)
C
SECONDARY BREAKDOWN LIMITED
SECONDARY BREAKDOWN LIMITED
TIP115
TIP116
TIP117
TIP110
TIP111
TIP112
CURVES APPLY BELOW
RATED V
CURVES APPLY BELOW
RATED V
CEO
CEO
0.1
1.0
0.1
1.0
10
40
60 80 100
10
60 80 100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 5. TIP115, 116, 117
Figure 6. TIP110, 111, 112
200
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
T
= 25°C
C
100
70
down. Safe operating area curves indicate I – V
limits of
C
CE
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
50
The data of Figures 5 and 6 is based on T
= 150 C;
J(pk)
is variable depending on conditions. Second breakdown
C
ob
T
C
30
20
C
ib
pulse limits are valid for duty cycles to 10% provided T
J(pk)
may be calculated from the data in Figure 4.
< 150 C. T
J(pk)
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
PNP
NPN
10
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0
4.0 6.0 10
20
40
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitance
3
Motorola Bipolar Power Transistor Device Data
NPN
PNP
TIP110, 111, 112
TIP115, 116, 117
6.0 k
6.0 k
V
= 3.0 V
T
= 125°C
V
= 3.0 V
CE
J
CE
T
= 125°C
4.0 k
3.0 k
4.0 k
3.0 k
J
25°C
25°C
2.0 k
2.0 k
–55°C
–55°C
1.0 k
800
1.0 k
800
600
600
400
300
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
I , COLLECTOR CURRENT (AMP)
C
0.4 0.6
1.0
2.0
4.0
I
, COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
3.4
3.0
2.6
2.2
1.8
3.4
T
= 25°C
T
= 25°C
J
J
I
=
C
3.0
2.6
2.2
1.8
1.4
0.5 A
I
=
C
1.0 A
4.0 A
2.0 A
0.5 A
1.0 A
2.0 A
4.0 A
1.4
1.0
0.6
1.0
0.6
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
, BASE CURRENT (mA)
I , BASE CURRENT (mA)
B
B
Figure 9. Collector Saturation Region
2.2
1.8
1.4
2.2
T
= 25°C
T
= 25°C
J
J
1.8
1.4
V
@ I /I = 250
C B
BE(sat)
V
@ I /I = 250
C B
BE(sat)
V
BE
@ V = 3.0 V
CE
V
@ V
CE
= 3.0 V
BE
1.0
0.6
0.2
1.0
0.6
0.2
V
@ I /I = 250
C B
V
@ I /I = 250
CE(sat)
CE(sat) C B
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
I , COLLECTOR CURRENT (AMP)
C
0.4
0.6
1.0
2.0
4.0
I
, COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
NPN
PNP
TIP110, 111, 112
TIP115, 116, 117
+0.8
0
+0.8
0
*APPLIES FOR I /I
C B
≤
h
/3
*APPLIES FOR I /I
≤
h
/3
FE
C B
FE
–0.8
–1.6
–2.4
–0.8
–1.6
25°C to 150°C
25°C to 150°C
*
θ
for V
VC CE(sat)
*
θ
for V
CE(sat)
VC
–55°C to 25°C
–2.4
–3.2
–55°C to 25°C
25°
C to 150°C
25°C to 150°C
–3.2
θ
for V
BE
VC
–55
°C to 25°C
θ
for V
BE
VC
–55°C to 25°C
–4.0
–4.8
–4.0
–4.8
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I
, COLLECTOR CURRENT (AMP)
I , COLLECTOR CURRENT (AMP)
C
C
Figure 11. Temperature Coefficients
5
4
5
10
10
REVERSE
FORWARD
REVERSE
FORWARD
10
4
10
10
3
3
10
10
V
= 30 V
CE
V
= 30 V
CE
2
2
1
0
10
10
10
T
= 150°C
J
T
= 150°C
J
1
10
10
100°C
0
100°C
25
°
C
25
°C
–1
–1
10
10
–0.6 –0.4 –0.2
0
+0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4
–0.6 –0.4 –0.2
0
+0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4
V
, BASE-EMITTER VOLTAGE (VOLTS)
V , BASE-EMITTER VOLTAGE (VOLTS)
BE
BE
Figure 12. Collector Cut-Off Region
VOLTAGE AND CURRENT WAVEFORMS
TEST CIRCUIT
t
≈ 3.5 ms (SEE NOTE A)
w
V
MONITOR
CE
0 V
INPUT
VOLTAGE
MJE254
–5 V
100 mH
+
R
BB1
INPUT
TUT
100 ms
2 k
Ω
V
= 20 V
0.71 A
CC
COLLECTOR
CURRENT
50
Ω
–
I
R
100
C
BB2
Ω
50
Ω
MONITOR
0 V
R
=
+
–
S
V
V
BB1
= 10 V
CER
0.1
Ω
V
= 0
BB2
COLLECTOR
VOLTAGE
20 V
V
CE(sat)
Note A: Input pulse width is increased until I
NPN test shown; for PNP test
= 0.71 A,
CM
reverse all polarity and use MJE224 driver.
Figure 13. Inductive Load Switching
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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TIP110/D
◊
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