TIP120UA [MOTOROLA]

5A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB;


型号：	TIP120UA
厂家：	MOTOROLA
描述：	5A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB 晶体晶体管
文件：	总6页 (文件大小：254K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by TIP120/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2500 (Typ) @ I = 4.0 Adc

Collector–Emitter Sustaining Voltage — @ 100 mAdc

•

= 60 Vdc (Min) — TIP120, TIP125

= 80 Vdc (Min) — TIP121, TIP126

= 100 Vdc (Min) — TIP122, TIP127

CEO(sus)

•

Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I = 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ I = 5.0 Adc

•

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

TO–220AB Compact Package

*Motorola Preferred Device

*MAXIMUM RATINGS

TIP120,

TIP125

TIP121,

TIP126

TIP122,

TIP127

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

65 WATTS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

5.0

8.0

Base Current

120

mAdc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.52

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.0

0.016

Watts

W/ C

Unclamped Inductive Load Energy (1)

Operating and Storage Junction,

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.92

62.5

CASE 221A–06

TO–220AB

θJC

θJA

= 100 Ω.

(1) I = 1 A, L = 100 mH, P.R.F. = 10 Hz, V

= 20 V, R

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

Vdc

CEO(sus)

(I = 100 mAdc, I = 0)

TIP120, TIP125

TIP121, TIP126

TIP122, TIP127

100

—

Collector Cutoff Current

mAdc

CEO

CBO

= 30 Vdc, I = 0)

TIP120, TIP125

TIP121, TIP126

TIP122, TIP127

—

0.5

= 40 Vdc, I = 0)

= 50 Vdc, I = 0)

Collector Cutoff Current

= 60 Vdc, I = 0)

TIP120, TIP125

TIP121, TIP126

TIP122, TIP127

—

0.2

= 80 Vdc, I = 0)

= 100 Vdc, I = 0)

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

—

2.0

EBO

ON CHARACTERISTICS (1)

DC Current Gain

—

(I = 0.5 Adc, V

= 3.0 Vdc)

1000

—

(I = 3.0 Adc, V

Collector–Emitter Saturation Voltage

(I = 3.0 Adc, I = 12 mAdc)

Vdc

CE(sat)

—

2.0

4.0

(I = 5.0 Adc, I = 20 mAdc)

Base–Emitter On Voltage

(I = 3.0 Adc, V = 3.0 Vdc)

—

2.5

BE(on)

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain

4.0

—

(I = 3.0 Adc, V

= 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(V = 10 Vdc, I = 0, f = 0.1 MHz

TIP125, TIP126, TIP127

TIP120, TIP121, TIP122

—

300

200

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

5.0

PNP

NPN

– 30 V

& R VARIED TO OBTAIN DESIRED CURRENT LEVELS

MUST BE FAST RECOVERY TYPE, eg:

3.0

2.0

1N5825 USED ABOVE I

MSD6100 USED BELOW I

≈

100 mA

SCOPE

1.0

≈

TUT

0.7

0.5

approx

+ 8.0 V

≈

8.0 k

≈

120

0.3

0.2

= 30 V

/I = 250

+ 4.0 V

for t and t , D is disconnected

approx

–12 V

C B

B1 B2

25 µs

= I

= 25°C

0.1

and V = 0

0.07

0.05

t , t

≤ 10 ns

@ V

= 0

For NPN test circuit reverse all polarities.

BE(off)

DUTY CYCLE = 1.0%

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit

Figure 3. Switching Times

Motorola Bipolar Power Transistor Device Data

1.0

0.7

0.5

D = 0.5

0.3

0.2

0.1

(pk)

= r(t) R

JC(t)

°C/W MAX

0.1

= 1.92

0.07

0.05

0.02

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.03

0.02

– T = P

J(pk)

(pk)

JC(t)

DUTY CYCLE, D = t /t

1 2

0.01

SINGLE PULSE

0.05

0.01

0.02

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

t, TIME (ms)

Figure 4. Thermal Response

100 µs

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

500 µs

5.0

down. Safe operating area curves indicate I – V

limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

2.0

1.0

0.5

= 150°C

BONDING WIRE LIMITED

THERMALLY LIMITED

@ T = 25

1 ms

The data of Figure 5 is based on T

= 150 C; T is

C (SINGLE PULSE)

J(pk)

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T

5 ms

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

0.2

J(pk)

may be calculated from the data in Figure 4.

RATED V

0.1

< 150 C. T

CEO

J(pk)

TIP120, TIP125

TIP121, TIP126

TIP122, TIP127

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown

0.05

0.02

1.0

2.0 3.0

5.0 7.0 10

50 70 100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

10,000

5000

300

= 25°C

3000

2000

200

1000

500

= 25°C

100

300

200

= 4.0 Vdc

= 3.0 Adc

100

PNP

NPN

PNP

NPN

1.0

0.1

2.0

5.0

100 200

500 1000

0.2

0.5

1.0

2.0

5.0

100

f, FREQUENCY (kHz)

, REVERSE VOLTAGE (VOLTS)

Figure 6. Small–Signal Current Gain

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

NPN

PNP

TIP120, TIP121, TIP122

TIP125, TIP126, TIP127

20,000

10,000

20,000

= 4.0 V

10,000

7000

5000

= 150°C

3000

2000

3000

2000

25°C

1000

500

–55°C

1000

700

500

–55°C

300

200

300

200

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

0.1

0.2 0.3

0.5 0.7 1.0

I , COLLECTOR CURRENT (AMP)

2.0 3.0

5.0 7.0 10

, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

3.0

2.6

2.2

3.0

= 25°C

T = 25°C

= 2.0 A

4.0 A

I = 2.0 A

6.0 A

2.6

2.2

4.0 A

6.0 A

1.8

1.4

1.0

1.8

1.4

1.0

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

, BASE CURRENT (mA)

I , BASE CURRENT (mA)

Figure 9. Collector Saturation Region

3.0

2.5

2.0

3.0

= 25°C

T = 25°C

2.5

2.0

@ I /I = 250

C B

1.5

1.0

0.5

BE(sat)

1.5

1.0

0.5

@ V = 4.0 V

@ V

= 4.0 V

@ I /I = 250

C B

BE(sat)

@ I /I = 250

C B

CE(sat)

@ I /I = 250

C B

CE(sat)

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

0.1

0.2 0.3

0.5 0.7 1.0

I , COLLECTOR CURRENT (AMP)

2.0 3.0

5.0 7.0 10

, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

MIN

MILLIMETERS

DIM

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

–––

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

0.080

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A–06

TO–220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

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6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Bipolar Power Transistor Device Data

TIP120/D

◊

TIP120UA [MOTOROLA]

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