TIP30C [MOTOROLA]
1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS; 1安培功率晶体管互补硅80-100 VOLTS 30瓦
| 型号： | TIP30C |
| 厂家： | 
MOTOROLA |
| 描述： | 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS |
| 文件： | 总4页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by TIP29B/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general purpose amplifier and switching applications.
Compact TO–220 AB package.
MAXIMUM RATINGS
TIP29B
TIP30B
TIP29C
TIP30C
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
V
CEO
80
80
100
100
V
CB
EB
V
5.0
Collector Current — Continuous
Peak
I
C
1.0
3.0
80–100 VOLTS
30 WATTS
Base Current
I
B
0.4
Adc
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
30
0.24
Watts
W/ C
Total Power Dissipation @ T = 25 C
A
Derate above 25 C
P
D
2.0
0.016
Watts
W/ C
Unclamped Inductive Load Energy
(See Note 3)
E
32
mJ
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
CASE 221A–06
TO–220AB
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
62.5
C/W
C/W
θJA
4.167
θJC
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I = 30 mAdc, I = 0)
TIP29B, TIP30B
TIP29C, TIP30C
V
80
100
—
—
Vdc
CEO(sus)
C
B
Collector Cutoff Current (V
= 60 Vdc, I = 0)
I
CEO
—
0.3
mAdc
CE
B
Collector Cutoff Current
I
µAdc
CES
(V
CE
(V
CE
= 80 Vdc, V
= 100 Vdc, V
EB
= 0)
= 0)
TIP29B, TIP30B
TIP29C, TIP30C
—
—
200
200
EB
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I = 0)
I
—
1.0
mAdc
—
C
EBO
ON CHARACTERISTICS (1)
DC Current Gain (I = 0.2 Adc, V
= 4.0 Vdc)
= 4.0 Vdc)
h
FE
40
15
—
75
C
CE
CE
DC Current Gain (I = 1.0 Adc, V
C
Collector–Emitter Saturation Voltage (I = 1.0 Adc, I = 125 mAdc)
V
CE(sat)
—
—
0.7
1.3
Vdc
Vdc
C
B
Base–Emitter On Voltage (I = 1.0 Adc, V
C
= 4.0 Vdc)
V
BE(on)
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
f
3.0
20
—
—
MHz
—
T
(I = 200 mAdc, V
C CE
= 10 Vdc, f = 1.0 MHz)
test
Small–Signal Current Gain (I = 0.2 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle 2.0%.
(2) f = h • f
.
T
fe test
(3) This rating based on testing with L = 20 mH, R
C
= 100 Ω, V = 10 V, I = 1.8 A, P.R.F = 10 Hz.
CC C
BE
REV 1
Motorola, Inc. 1995
3.0
2.0
500
300
I
I
t
= I
B1 B2
/I = 10
T
= 150
°
C
V
= 2.0 V
C B
J
CE
t
′
s
′
= t – 1/8 t
s
s
f
1.0
T
= 25
°C
J
25°C
t @ V = 30 V
CC
0.7
0.5
f
100
70
–55
°
C
50
0.3
0.2
t @ V
CC
= 10 V
f
30
0.1
0.07
0.05
10
7.0
5.0
0.03
0.03 0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
0.03 0.05 0.07 0.1
0.5 0.7 1.0
, COLLECTOR CURRENT (AMP)
3.0
0.3
I
, COLLECTOR CURRENT (AMP)
I
C
C
Figure 1. DC Current Gain
Figure 2. Turn–Off Time
TURN–ON PULSE
APPROX
+11 V
V
CC
2.0
1.0
R
C
I
T
/I = 10
C B
= 25°C
J
t @ V
= 30 V
SCOPE
r
CC
V
0.7
0.5
in
V
0
in
EB(off)
R
B
V
t
1
0.3
t @ V
= 10 V
r
CC
C
<< C
jd
eb
t
3
APPROX
+11 V
–4.0 V
t
≤
7.0 ns
1
0.1
0.07
0.05
100 < t < 500
µ
s
t
@ V = 2.0 V
EB(off)
2
d
t
< 15 ns
V
3
in
DUTY CYCLE
APPROX –9.0 V
and R VARIED TO OBTAIN
≈ 2.0%
0.03
0.02
t
2
R
TURN–OFF PULSE
B
C
0.03 0.05 0.07 0.1
0.3
0.5 0.7 1.0
3.0
DESIRED CURRENT LEVELS.
I
, COLLECTOR CURRENT (AMP)
C
Figure 3. Switching Time Equivalent Circuit
Figure 4. Turn–On Time
10
3.0
0.1
T
= 150
°
C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
J
down. Safe operating area curves indicate I – V
tion; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
opera-
C
CE
1 ms
dc
The data of Figure 5 is based on T
= 150 C; T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ T = 25°C
C
BONDING WIRE LIMITED
J(pk)
5 ms
150 C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
CURVES APPLY BELOW
RATED V
TIP29B, 30B
TIP29C, 30C
CEO
0.1
1.0
4.0
10
20
40
100
V
, COLLECTOR–EMITTER VOLTAGE, (VOLTS)
CE
Figure 5. Active Region Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
3
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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TIP29B/D
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