TIP33C [MOTOROLA]
COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管型号: | TIP33C |
厂家: | MOTOROLA |
描述: | COMPLEMENTARY SILICON POWER TRANSISTORS |
文件: | 总4页 (文件大小:108K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by TIP33B/D
SEMICONDUCTOR TECHNICAL DATA
. . . for general–purpose power amplifier and switching applications.
•
•
•
•
10 A Collector Current
Low Leakage Current — I
= 0.7 mA @ 60 V
CEO
= 40 Typ @ 3.0 A
Excellent dc Gain — h
FE
*Motorola Preferred Device
High Current Gain Bandwidth Product — h = 3.0 min @ I = 0.5 A, f = 1.0 MHz
fe
C
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
MAXIMUM RATINGS
TIP33B
TIP34B
TIP33C
TIP34C
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
80 V
100 V
100 V
80 WATTS
V
80 V
CB
EB
V
5.0
Collector Current — Continuous
Peak (1)
I
C
10
15
Base Current — Continuous
Total Power Dissipation
I
3.0
Adc
B
P
D
@ T = 25 C
80
0.64
Watts
W/ C
C
Derate above 25 C
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
CASE 340D–01
TO–218AC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.56
35.7
Unit
C/W
C/W
Thermal Resistance, Junction to Case
Junction–To–Free–Air Thermal Resistance
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle
R
R
θJC
θJA
10%.
500
V
= 4.0 V
= 25°C
200
100
CE
T
J
50
20
10
NPN
PNP
5.0
0.1
1.0
10
I
, COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 30 mA, I = 0)
TIP33B, TIP34B
TIP33C, TIP34C
80
100
—
—
C
B
Collector–Emitter Cutoff Current
(V = 60 V, I = 0)
I
—
—
—
0.7
0.4
1.0
mA
mA
mA
CEO
TIP33B, TIP33C, TIP34B, TIP34C
CE
Collector–Emitter Cutoff Current
(V = Rated V , V = 0)
B
I
CES
EBO
CE CEO EB
Emitter–Base Cutoff Current
(V = 5.0 V, I = 0)
I
EB
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
—
(I = 1.0 A, V
= 4.0 V)
= 4.0 V)
40
20
—
100
C
CE
CE
(I = 3.0 A, V
C
Collector–Emitter Saturation Voltage
(I = 3.0 A, I = 0.3 A)
V
Vdc
Vdc
CE(sat)
—
—
1.0
4.0
C
B
(I = 10 A, I = 2.5 A)
C
B
Base–Emitter On Voltage
V
BE(on)
(I = 3.0 A, V
(I = 10 A, V
C
= 4.0 V)
= 4.0 V)
—
—
1.6
3.0
C
CE
CE
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
h
20
—
—
—
fe
(I = 0.5 A, V
C CE
= 10 V, f = 1.0 kHz)
Current–Gain — Bandwidth Product
(I = 0.5 A, V = 10 V, f = 1.0 MHz)
f
T
3.0
MHz
C
CE
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2.0%.
20
15
L = 200 µH
I
V
T
/I
≥
5.0
= 0 to 5.0 V
C B
BE(off)
15
10
= 100°C
C
300 µs
1.0 ms
5.0
dc
10
5.0
0
3.0
2.0
10 ms
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
TIP33C
TIP34C
1.0
0.5
TIP33B
TIP34B
TIP33C
TIP34C
TIP33B
TIP34B
0.2
0.1
T
= 25°C
C
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
0
20
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
40
60
80
100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
Figure 3. Maximum Rated Forward Bias
Safe Operating Area
FORWARD BIAS
REVERSE BIAS
The Forward Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
The Reverse Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during reverse biased turn–off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.
during forward bias. The data is based on T = 25 C; T
J(pk)
C
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be der-
ated thermally for T > 25 C.
C
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
Q
B
E
MILLIMETERS
INCHES
MIN
DIM
A
B
C
D
E
G
H
J
MIN
19.00
14.00
4.20
MAX
19.60
14.50
4.70
MAX
0.771
0.570
0.185
0.051
0.064
0.225
0.118
0.023
1.259
0.602
0.167
0.712
0.149
0.078
U
4
0.749
0.551
0.165
0.040
0.058
0.206
0.103
0.016
1.123
0.579
0.158
0.689
0.134
0.060
A
L
S
1.00
1.30
1.45
1.65
1
2
3
5.21
5.72
K
2.60
3.00
0.40
0.60
K
L
Q
S
U
V
28.50
14.70
4.00
32.00
15.30
4.25
17.50
3.40
18.10
3.80
1.50
2.00
D
J
STYLE 1:
PIN 1. BASE
H
V
2. COLLECTOR
3. EMITTER
G
4. COLLECTOR
CASE 340D–01
TO–218AC
ISSUE A
3
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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TIP33B/D
◊
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