TP3006 [MOTOROLA]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | TP3006 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总6页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by TP3006/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
The TP3006 is designed for cellular radio base station amplifiers up to 960
MHz. It incorporates high value emitter ballast resistors, gold metallizations and
offers a high degree of reliability and ruggedness. The TP3006 also features
input and output matching networks and high impedances. It can easily operate
in a full 870–960 MHz bandwidth in a simple circuit.
5 W, 870–960 MHz
•
•
Class AB Operation
RF POWER TRANSISTOR
NPN SILICON
Specified 26 Volts, 960 MHz Characteristics
Output Power — 5 Watts
Gain — 9 dB min
Efficiency — 45% min
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
Adc
°C
Collector–Emitter Voltage
Collector–Base Voltage
V
CER
V
CBO
V
EBO
45
55
Emitter–Base Voltage
3.5
Collector–Current — Continuous
Storage Temperature Range
Operating Junction Temperature
I
C
2
T
stg
– 40 to +100
200
T
J
°C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
25
0.14
Watts
W/°C
CASE 319–07, STYLE 2
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
Max
Unit
R
7
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 15 mA, R = 75 Ω)
V
V
V
45
3.5
55
—
—
—
—
—
—
—
—
4
Vdc
Vdc
Vdc
mA
(BR)CER
C
BE
Emitter–Base Breakdown Voltage
(I = 4 mAdc)
E
(BR)EBO
(BR)CBO
Collector–Base Breakdown Voltage
(I = 15 mAdc)
C
Collector–Emitter Leakage
I
CER
(V
CE
= 26 V, R = 75 Ω)
BE
ON CHARACTERISTICS
DC Current Gain
(I = 0.5 Adc, V
C CE
h
FE
15
—
100
—
= 10 Vdc)
NOTE:
(continued)
1. Thermal resistance is determined under specified RF operating condition at temperature test point (see drawing of the package).
REV 6
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V = 26 V, I = 0, f = 1 MHz )
C
—
8.5
—
pF
ob
CB
E
FUNCTIONAL TESTS IN CW
Common–Emitter Amplifier Power Gain
G
9
45
3
10.5
50
—
—
—
dB
%
p
(V
CC
= 26 V, P
out
= 5 W, I = 50 mA, f = 960 MHz)
CQ
Collector Efficiency
(V = 26 V, P
h
= 5 W, I = 50 mA, f = 960 MHz)
CC out
Q
Input Overdrive (no degradation in P
)
P
in
—
dB
out
= 26 V, I = 50 mA, f = 960 MHz)
(V
CC
Q
FUNCTIONAL TESTS IN 2 TONES
3rd Order Intermodulation
IMD3
IMD5
—
—
– 46
– 46
—
—
dB
dB
(V
CC
= 26 V, P
peak
= 5 W, I
= 50 mA, f = 900 MHz)
= 50 mA, f = 900 MHz)
CQ
5th Order Intermodulation
(V = 26 V, P = 5 W, I
CC peak
CQ
f = 870 MHz
Z
OL
960
f = 870 MHz
Z
in
Z
= 10 Ω
o
960
P
out
= 5 W (CW), V
CE
= 26 V, I
CQ
= 50 mA
f
Z
in
(Ω)
Z
OL
(Ω)
(MHz)
870
900
960
6.26 – j6.40
7.40 – j12.3
14.8 – j12.9
5.22 + j9.47
4.17+ j9.02
4.21 + j9.91
Figure 1. Series Equivalent Input and Output Impedances
TP3006
2
MOTOROLA RF DEVICE DATA
T2
T1
C5
+V
CC
C4
R2
C9
C8
C7
R3
D1
D2*
C6
R1
C3
RF OUTPUT
RF INPUT
C2
DUT
C1
*CONTACT WITH RF TRANSISTOR
50
Ω
50
Ω
C1
22 pF, 5%, Chip Capacitor 0805
330 pF, Chip Capacitor 0805
15 nF, 5%, Chip Capacitor 0805
6.8 F, 35 V, Chip Capacitor 0805
330 pF, Chip Capacitor 0805
SMD Diode
R1
R2
R3
T1
T2
2.2 Ω, 5%, Chip Resistor 1206
51 Ω, 5%, Chip Resistor 0805
470 Ω, 5%, Chip Resistor 0805 to be adjusted for I = 50 mA
SMD Transistor, BCX54 or Similar
Voltage Regulator 7805
C2,C3
C4,C7
C5,C9
C6,C8
D1,D2
Q
Figure 2. 960 MHz Electrical Schematic
TYPICAL CHARACTERITICS
CW – WIDEBAND
– 25
– 25
– 35
– 45
3rd ORDER
3rd ORDER
– 35
5th ORDER
5th ORDER
– 45
V
I
= 26 V
= 50 mA
V
I
= 26 V
= 100 mA
CE
CQ
CE
CQ
f = 900 MHz
f = 900 MHz
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
P
, OUTPUT POWER (WATTS)
P
, OUTPUT POWER (WATTS)
out
out
Figure 3. Intermodulation versus Output Power
Figure 4. Intermodulation versus Output Power
PEAK POWER
– 6 dB
IMD
0.1 MHz
MOTOROLA RF DEVICE DATA
TP3006
3
TYPICAL CHARACTERITICS
CW – WIDEBAND
8
7
6
5
4
3
60
50
40
30
20
V
= 24 V
CC
V
I
= 28 V
= 50 mA
CE
CQ
V
I
= 28 V
= 50 mA
2
1
CE
CQ
f = 960 MHz
f = 960 MHz
2
3
4
5
6
7
8
0
0.1
0.2
0.3
P , OUTPUT POWER (WATTS)
out
0.4
0.5
0.6
0.7
0.8
0.9
P
, OUTPUT POWER (WATTS)
out
Figure 5. Collector Efficiency versus Output Power
Figure 6. Output Power versus Input Power
T2
C9
R3
C5
R2
C4
C3
D1
T1
D2
C8
C7
R1
C2
C1
INPUT
OUTPUT
EPOXY GLASS 0.8 mm GI 180 PERSTORP DOUBLE SIDE 35 µm Cu.
Figure 7. 960 MHz Test Circuit Components View
TP3006
4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
Q 2 PL
-A-
L
M
M
M
0.15 (0.006)
T
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
IDENTIFICATION
NOTCH
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6
1
5
4
3
INCHES
MIN
MILLIMETER
DIM
A
B
C
D
E
F
H
J
MAX
0.985
0.375
0.260
0.125
0.114
0.085
0.170
0.006
0.110
MIN
24.52
9.02
5.85
2.93
2.59
1.91
4.07
0.11
2.29
MAX
25.01
9.52
6.60
3.17
2.90
2.15
4.31
0.15
2.79
-N-
0.965
0.355
0.230
0.115
0.102
0.075
0.160
0.004
0.090
2
K
F
D 2 PL
0.38 (0.015)
M
M
M
T
A
N
K
L
0.725 BSC
18.42 BSC
N
Q
0.225
0.125
0.241
0.135
5.72
3.18
6.12
3.42
M
M
M
B
0.38 (0.015)
T
A
N
STYLE 2:
PIN 1. EMITTER (COMMON)
2. BASE (INPUT)
J
3. EMITTER (COMMON)
4. EMITTER (COMMON)
5. COLLECTOR (OUTPUT)
6. EMITTER (COMMON)
C
H
E
SEATING
PLANE
-T-
CASE 319–07
ISSUE M
MOTOROLA RF DEVICE DATA
TP3006
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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TP3006/D
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