NE-8 [MPSIND]

E-BEAM GUN SWITCHING POWER SUPPLY; 电子束枪开关电源
NE-8
元器件型号: NE-8
生产厂家: MPS INDUSTRIES, INC.    MPS INDUSTRIES, INC.
描述和应用:

E-BEAM GUN SWITCHING POWER SUPPLY
电子束枪开关电源

开关 电子
PDF文件: 总1页 (文件大小:60K)
下载文档:  下载PDF数据表文档文件
型号参数:NE-8参数

NE800100

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE800196

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE800199

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE800199

RF SMALL SIGNAL, FET

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0 RENESAS

NE800200

RF SMALL SIGNAL, FET

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0 RENESAS

NE800296

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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1 CEL

NE800400

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE800495-4

RF SMALL SIGNAL, FET

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0 RENESAS

NE800495-4

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE800495-5

RF SMALL SIGNAL, FET

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0 RENESAS

NE800495-6

RF SMALL SIGNAL, FET

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0 RENESAS

NE800495-6

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE800495-7

RF SMALL SIGNAL, FET

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0 RENESAS

NE800495-7

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE800495-8

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL