MP111DS-LF-Z [MPS]
Analog Circuit,;
| 型号： | MP111DS-LF-Z |
| 厂家： | 
MONOLITHIC POWER SYSTEMS |
| 描述： | Analog Circuit, 光电二极管 |
| 文件： | 总12页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP111
Dying Gasp Storage and Release
Control IC
The Future of Analog IC Technology
DESCRIPTION
FEATURES
The MP111 is a dying gasp storage and release
controller. It charges storage capacitor from the
input during normal operation. Once the storage
capacitor is charged to the selected voltage, the
charge is stopped, and the storage capacitor is
separated from the input. The charging circuit
maintains the storage voltage after the charge
is completed.
Wide 4.5V to 18V Input Operating Range
2.5A dumping current from Storage to VIN
Built-in 250mA Current Limit for Charging
Storage Capacitor
User Programmable Storage and Release
Voltage
Dying Gasp FLAG Indicator
Available in SOIC-8 package
The MP111 keeps monitoring the input voltage,
and releases the charge from storage capacitor
to input capacitor when the input voltage is
lower than the selected release voltage. It
regulates the input voltage to keep it close to
release voltage for as long as possible.
APPLICATIONS
Cable/DSL/PON Modems
Home Gateway
Access Point Networks
All MPS parts are lead-free and adhere to the RoHS directive. For MPS green
status, please visit MPS website under Quality Assurance. “MPS” and “The
Future of Analog IC Technology” are Registered Trademarks of Monolithic
Power Systems, Inc.
The MP111 has built-in current limit circuit
during the charging up of the storage
capacitors. The storage and release voltage
can be programmed to user’s desired value by
external resistors.
The MP111 comes in an SOIC-8 package and
requires a minimum number of readily available
standard external components.
TYPICAL APPLICATION
V
Release
STORAGE
C3
2.2nF
V
=23V, V
=10.2V, P
=5W
VIN
STRG
RLES
RLES
4.5V to 18V
C2
15pF
2
8
C1
22
C4
22nF
R5
10
VIN
VMAX
R3
464k
Connect
to SW
3
1
7
FB2
BST
R4
49.9k
MP111
VSTRG
23V
STRG
FB1
V
Open Drain
Output
STORAGE
5V/div.
R1
845k
6
4
C5
2000
GASP
GND
V
IN
5
5V/div.
PG
R2
37.4k
10V/div.
GASP
10V/div.
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
1
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
ORDERING INFORMATION
Part Number*
Package
Top Marking
MP111DS
SOIC-8
MP111
* For Tape & Reel, add suffix –Z (eg.MP111DS–Z);
For RoHS, compliant packaging, add suffix –LF (eg. MP111DS–LF–Z).
PACKAGE REFERENCE
TOP VIEW
BST
VIN
1
2
3
4
8
7
6
5
VMAX
STRG
GASP
FB1
FB2
GND
SOIC-8
ABSOLUTE MAXIMUM RATINGS (1)
VIN ..................................................-0.3V to 22V
Thermal Resistance (4)
SOIC-8....................................90...... 45... C/W
θJA
θJC
V
V
V
V
V
V
BST.................................................-0.3V to 40V
BST-VIN………………………………-0.3V to 25V
MAX.................................................-0.3V to 42V
MAX-VIN………………………….......-0.3V to 25V
STRG ...............................................-0.3V to 32V
STRG-VIN……………………………..-0.3V to 25V
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ (MAX), the junction-to-
ambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD (MAX) = (TJ
(MAX)-TA)/θJA. Exceeding the maximum allowable power
dissipation will cause excessive die temperature, and the
regulator will go into thermal shutdown. Internal thermal
shutdown circuitry protects the device from permanent
damage.
VPG, VGASP .......................................-0.3V to 22V
All Other Pins.................................-0.3V to 6.5V
Junction Temperature...............................150C
Lead Temperature ....................................260C
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.
(2)
Continuous Power Dissipation (TA = +25°C)
............................................................. 1.2W
Junction Temperature...............................150C
Recommended Operating Conditions (3)
Supply Voltage VIN ...........................4.5V to 18V
Storage Voltage VSTRG ........................................
................................Vin to 2×VIN-0.8V(32V max)
Operating Junction Temp. (TJ). -40°C to +125°C
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
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© 2016 MPS. All Rights Reserved.
2
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
ELECTRICAL CHARACTERISTICS
VIN = 12V, TA = 25C, unless otherwise noted.
Parameter
Symbol
Condition
Min
Typ
Max
Units
V
Input Supply Voltage Range
Supply Current (Shutdown)
Supply Current (Quiescent)
VIN
IIN
4.5
18
1
μA
VEN = 0V
IIN
300
μA
VEN = 2V, VFB = 1.1V
VIN Under Voltage Lockout
Threshold Rising
3.0
3.5
4.0
V
INUVVth
VIN Under Voltage Lockout
Threshold Hysteresis
INUVHYS
VFB
350
1
mV
V
Feedback Voltage
0.95
1.05
Vstorage
Threshold-High
Refresh
Refresh
Refresh
VFB1_H
VFB+0.025 VFB+0.05
V
Vstorage
Threshold-Low
VFB1_L
VFB-0.05 VFB-0.025
50
V
Vstorage
Threshold-Hysteresis
VFB1_Hys
mV
Feedback Current
IFB
VFB1= VFB2=1V
10
1.05
1
nA
GASP High Threshold
GASP Low Threshold
VTHGASP
VTLGASP
VFB2
VFB2
GASP Delay
2
μs
GASPTd
GASP Sink Current
Capability
VGASP
Sink 4mA
0.4
10
V
GASP Leakage Current
IGASP_LEAK
VGASP=3.3V
nA
Input Inrush Current Limit
VIN=12V,
CSTORAGE from 0 to VIN
Charging
for
Charging
Storage IPRECHARGE_LIMIT
0.25
2.5
A
A
Capacitor
Current limit for Dumping
Charge from CSTORAGE to
VIN
IDUMP_LIMIT
Thermal Shutdown (5)
TSD
150
30
ºC
ºC
Thermal
Shutdown
THYS
Hysteresis (5)
Notes:
5) Guaranteed by design.
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
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© 2016 MPS. All Rights Reserved.
3
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
PIN FUNCTIONS
SOIC-8
Pin #
Name Description
Bootstrap. A capacitor and a resistor in series connected between this pin and DC/DC
converter’s SW node is required to charge storage capacitor.
1
BST
Supply Voltage. The MP111 operates from a +4.5V to +18V input rail. Input decoupling
capacitor is needed to decouple the input rail.
2
3
VIN
FB2
Feedback to set release voltage.
System Ground. This pin is the reference ground of the regulated output voltage.
For this reason care must be taken in PCB layout. Suggested to be connected to
GND with copper and vias.
4
GND
FB1
5
6
7
8
Feedback to set storage voltage.
GASP Open drain output to indicate dying gasp operation is active.
STRG Connect to storage capacitor for dying gasp storage and release operation.
VMAX Internal Supply. A 2.2nF ceramic capacitor is required for decoupling.
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
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© 2016 MPS. All Rights Reserved.
4
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 12V, VSTORAGE = 23V, VRELEASE=10.2V, For DCDC Converter: POUT=5W, VOUT=3.3V, TA = +25ºC,
unless otherwise noted.
Release Time vs.
Thermal Performance
Storage Capacitance
300
250
200
150
100
50
12
P=1W
10
8
6
P=3W
P=5W
4
2
0
0
0
500 1000 1500 2000 2500
0.0001 0.001 0.01 0.1
1
10
MAXIMUM HOLD UP TIME (s)
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
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© 2016 MPS. All Rights Reserved.
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MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN = 12V, VSTORAGE = 23V, VRELEASE=10.2V, For DCDC Converter: POUT=5W, VOUT=3.3V, TA = +25ºC,
unless otherwise noted.
V
Charge Up
V
Refresh
V
Release
STORAGE
STORAGE
STORAGE
V
V
V
V
V
STORAGE
5V/div.
STORAGE
5V/div.
STORAGE
5V/div.
V
V
V
IN
IN
IN
5V/div.
5V/div.
5V/div.
PG
PG
PG
10V/div.
10V/div.
10V/div.
GASP
10V/div.
GASP
10V/div.
GASP
10V/div.
Release Time vs. Power
Release Time vs. Power
Release Time vs. Power
P
= 5W
P
= 3W
P
= 1W
OUT
OUT
OUT
V
STORAGE
5V/div.
V
STORAGE
5V/div.
STORAGE
5V/div.
V
V
V
IN
IN
IN
5V/div.
PG
5V/div.
5V/div.
PG
PG
10V/div.
10V/div.
10V/div.
GASP
10V/div.
GASP
10V/div.
GASP
10V/div.
V
V
STORAGE
5V/div.
STORAGE
5V/div.
STORAGE
5V/div.
V
V
IN
V
IN
IN
5V/div.
5V/div.
5V/div.
PG
PG
PG
10V/div.
10V/div.
10V/div.
GASP
10V/div.
GASP
10V/div.
GASP
10V/div.
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
6
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
BLOCK DIAGRAM
VMAX
VSTORAGE
BST
Boost/Charge/
Release
Circuitry
VIN
FB2
FB1
Logic Control
GASP
GND
Figure 1 – Functional Block Diagram
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
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© 2016 MPS. All Rights Reserved.
7
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
OPERATION
MP111 is a dying gasp storage and release
control IC. It charges the storage capacitors
from input supply during power start up and
keeps refreshing the storage voltage at a
regulated value during normal operation.
MP111 continuously monitors the input voltage.
Once the input voltage is lower than the
programmed release voltage in case of losing
input power, it releases the charge from the
storage capacitors to input, and keeps the input
voltage regulated to the release voltage for as
long as possible. It allows the system to
respond to input power failure.
Release
MP111 keeps monitoring the input voltage.
Once the input voltage is lower than selected
release voltage in case of losing input power,
MP111 moves the charge from high voltage
storage capacitor to low input voltage capacitor.
The release voltage can be determined by
choosing appropriate input resistance divider.
The maximum LDO release current can be as
high as 2.5A. Until the storage capacitor voltage
is near the input voltage, the input voltage loses
its regulation and reduces further. A conceptual
release process of MP111 is shown in Figure 3.
Start-Up
Vstorage
During the power start-up, there are two periods
to charge the storage capacitors. In the first
period, the MP111 pre-charges the large
storage capacitors from 0 to nearly VIN with
built-in inrush current limit. Once the storage
voltage is close to the input voltage, the storage
voltage is boosted and regulated at target
voltage.
VIN
Vrelease
Input UVLO of DC/DC converter
GASP
The BST pin of MP111 should connect to the
DCDC switch node. Only after the DCDC is
enabled, the MP111 will start boosting. Figure 2
shows the charging build-up process of MP111.
t
Figure 3 – Timing of Releasing
Gasp Indicator
When the FB2 voltage, feedback voltage for the
input power, is higher than 1.05XVFB2, the
GASP pin will be pulled high. Connect a resistor
across VIN and GASP can drive GASP high.
When the FB voltage is lower than 1.00XVFB2
,
the GASP voltage will be internally pulled low.
GASP voltage can be used as communication
indicator signal which states input power
availability.
Figure 2 – Timing of Charging
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
8
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
APPLICATION INFORMATION
SET STORAGE VOLTAGE
The storage voltage can be set by choosing
appropriate external feedback resistors R1 and
R2 which is shown in Figure 4.
Figure 5 – Release Feedback Circuit
Similarly, the release voltage is set by:
R3
VRELEASE (1
) VFB2
R4
However, the selection of R3 and R4 not only
determines the release voltage, but impacts the
stability. Generally, choosing R3 to be
300~500kꢀ is recommended for a stable
performance with 47μF Cin. Table 2 lists the
recommended resistors setup for different
release voltages.
Figure 4 – Feedback Circuit for Storage
Voltage
The storage voltage is determined by:
R1
VSTORAGE (1
) VFB1
R2
Here is the example, if the storage voltage is
set to be 20V, choose R2 to be 40kΩ, R1 will be
then given by:
Table 2 – Resistor Selection for Different
Release Voltages
40k(20 VFB2
)
VRELEASE
R1
(kΩ)
475
464
324
R2
Cf
(pF)
15
15
15
Cin
(μF)
47
47
47
R1
760k
(V)
11
10.2
9.0
(kΩ)
47.5
49.9
40.2
VFB2
Table 1 lists the recommended resistors for
different storage voltages.
Table 1 – Resistor Selection for Different
Storage Voltages
Select Storage Capacitor
The Storage Capacitor is for energy storage
during normal operation and the energy will be
released to VIN in case of losing input power.
VSTORAGE (V)
R1 (kΩ)
R2 (kΩ)
15
19
23
750
750
850
53.2
41.6
37.4
Typically,
a
general purpose electrolytic
capacitor is recommended.
Select Release Voltage and Input Capacitors
The release voltage can be set by choosing
external feedback resistors R3 and R4 which is
shown in Figure 5.
The voltage rating of storage capacitor needs to
be higher than the targeted storage voltage.
The voltage rating of storage capacitor can be
fully utilized since the voltage on storage
capacitor is very stable during normal
operation. There will
be less
ripple
current/voltage for most of the time during
normal operation. The ripple current rating of
storage cap can be less consideration.
The needed capacitance is dependent on how
long the dying gasp time based on typically
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
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© 2016 MPS. All Rights Reserved.
9
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
application. Assume the input release current is
example, a 25V rated electrolytic capacitor would
be used for a 16V to 20V application.
IRELEASE when input voltage is regulated at
VRELEASE for the DCDC converter. The storage
voltage of MP111 is VSTORAGE, and the required
dying gasp time is TDASP. The necessary storage
capacitance can be calculated as following
equation:
However, since the MP111 tightly regulates the
storage voltage, the storage capacitor almost has
no AC ripple current going through it. The
resulting refresh rate of the MP111 is very low
which allows customers to safely use a 90%
capacitor derating (6). For example, a 25V
electrolytic capacitor, can safely handle a storage
voltage of up to 22V. Table 3 is some
recommended storage electrolytic capacitors
which can be used in typical xDSL application
IRELEASE TDASP
Cs
VSTORAGE VRELEASE
If
IRELEASE=1A,
TD=20ms,
VSTORAGE=20V,
VRELEASE=10V, the needed storage capacitance is
2000μF. Generally, the storage capacitance
should be chosen a little bit large to avoid
capacitance reduction at high voltage offset.
PCB Layout Guide
PCB layout is very important to achieve stable
operation. Please follow these guidelines and
take the EVB board layout for references.
In typical xDSL applications using a 12V input
supply, it is recommended to set the storage
voltage higher than 20V to fully utilize the high
1) Connect the BST pin as close as possible to
the SW node of DCDC converter through a
resistor and a small ceramic capacitor. Try to
avoid interconnect the feedback path.
voltage
energy
and
minimize
storage
capacitance requirements. Generally, a 25V
rated electrolytic capacitor can be used. The
lifetime of electrolytic capacitors can be severely
impacted by both environmental and electrical
factors. One of the most critical electrical factors
is the AC RMS ripple current through the
capacitor which leads to increased capacitor core
temperatures. Normally, for typical industrial
uses, it is recommended to derate the capacitor
voltage rating by as much as 70%-80%. For
2) Ensure all feedback connections are short
and direct. Place the feedback resistors and
compensation components as close to the
chip as possible.
3) Keep the connection of the storage
capacitors and STRG pin as short and wide
as possible.
Table 3 – Recommended Storage Capacitors
Part #
Vender
Sanyo
Kemet
Capacitance
1500μF
Voltage
25V
25V
Operating Temp
-40 to +105C
-40 to +105C
-40 to +105C
25ME1500WX
PEH526HAB4270M3
EEUFR1E152B
2700μF
1500μF
Panasonic
25V
Notes:
6) “Applying voltage does not affect the life time because the self heating by applying voltage can be ignored”, from Sanyo.
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
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© 2016 MPS. All Rights Reserved.
10
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
TYPICAL APPLICATION CIRCUITS
VIN
4.5V to 18V
C3
2.2nF
C2
15pF
C1
22
R3
464 k
VIN
FB2
VMAX
STRG
VSTRG
23V
R5
10k
R1
845k
C5
2000
MP111
R4
49. 9k
FB1
R2
37.4k
GASP
GND
C4
22nF
R5
10
BST
SW
VOUT
VIN
MPS DC/DC
converter
Figure 6 – MP111 Application Circuit
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
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© 2016 MPS. All Rights Reserved.
11
MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
PACKAGE INFORMATION
SOIC8
0.189(4.80)
0.197(5.00)
0.050(1.27)
0.024(0.61)
0.063(1.60)
8
5
0.150(3.80)
0.157(4.00)
0.228(5.80)
0.244(6.20)
0.213(5.40)
PIN 1 ID
1
4
TOP VIEW
RECOMMENDED LAND PATTERN
0.053(1.35)
0.069(1.75)
SEATING PLANE
0.004(0.10)
0.010(0.25)
0.0075(0.19)
0.0098(0.25)
0.013(0.33)
0.020(0.51)
SEE DETAIL "A"
0.050(1.27)
BSC
SIDE VIEW
FRONT VIEW
0.010(0.25)
0.020(0.50)
x 45o
NOTE:
1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN
BRACKET IS IN MILLIMETERS.
GAUGE PLANE
0.010(0.25) BSC
2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS.
3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH
OR PROTRUSIONS.
4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING)
SHALL BE 0.004" INCHES MAX.
0.016(0.41)
0.050(1.27)
0o-8o
5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION AA.
6) DRAWING IS NOT TO SCALE.
DETAIL "A"
NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee that third
party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not
assume any legal responsibility for any said applications.
MP111 Rev. 1.0
12/30/2016
www.MonolithicPower.com
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
12
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