MPQ4560DN-AEC1-Z

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MPQ4560  
Industrial-Grade, 2A, 2MHz, 55V  
Step-Down Converter  
Available in AEC-Q100  
FEATURES  
DESCRIPTION  
Guaranteed Industrial Automotive  
Temperature Range Limits  
Wide 3.8V-to-55V Operating Input Range  
250mΩ Internal Power MOSFET  
Up to 2MHz Programmable Switching  
Frequency  
The MPQ4560 is a high-frequency, step-down,  
switching regulator with an integrated, high-  
side, high-voltage, power MOSFET. It provides  
a 2A output with current mode control for fast  
loop response and easy compensation.  
The  
wide  
3.8V-to-55V  
input  
range  
140μA Quiescent Current  
Ceramic Capacitor Stable  
Internal Soft-Start  
accommodates  
a
variety of step-down  
applications, including those in automotive input  
environment. A 12µA shutdown mode supply  
current allows use in battery-powered  
applications.  
Up to 95% Efficiency  
Output Adjustable from 0.8V to 52V  
Available in QFN10 (3mmx3mm) and  
SOIC8E Packages  
High-power conversion efficiency over a wide  
load range is achieved by scaling down the  
switching frequency in light load conditions to  
reduce the switching and gate driving losses.  
AEC-Q100 Qualified  
APPLICATIONS  
High-Voltage Power Conversion  
Automotive Systems  
Industrial Power Systems  
Distributed Power Systems  
Battery Powered Systems  
Frequency foldback prevents inductor current  
runaway during startup and thermal shutdown  
provides reliable, fault tolerant operation.  
By switching at 2MHz, the MPQ4560 can  
prevent electromagnetic interference problems,  
such as those found in AM radio and ADSL  
applications.  
All MPS parts are lead-free and adhere to the RoHS directive. For MPS green  
status, please visit MPS website under Products, Quality Assurance page.  
“MPS” and “The Future of Analog IC Technology” are Registered Trademarks of  
Monolithic Power Systems, Inc.  
The MPQ4560 is available in small 3mm x 3mm  
QFN10 and SOIC8E packages.  
TYPICAL APPLICATION  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
1
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
ORDERING INFORMATION  
Part Number  
MPQ4560DN*  
Package  
SOIC8E  
Top Marking  
MP4560DN  
T8  
Junction Temperature (TJ)  
MPQ4560DQ**  
QFN10 (3×3mm)  
SOIC8E  
40°C to +125°C  
MPQ4560DN-AEC1  
MPQ4560DQ-AEC1  
MP4560DN  
T8  
QFN10 (3×3mm)  
* For Tape & Reel, add suffix Z (e.g. MPQ4560DN-Z)  
For RoHS Compliant Packaging, add suffix LF, (e.g. MPQ4560DN-LFZ)  
** For Tape & Reel, add suffix Z (e.g. MPQ4560DQ-Z)  
For RoHS Compliant Packaging, add suffix LF, (e.g. MPQ4560DQ-LFZ)  
PACKAGE REFERENCE  
QFN10 (3x3mm)  
SOIC8E  
ABSOLUTE MAXIMUM RATINGS (1)  
Supply Voltage (VIN).................... 0.3V to +60V  
Switch Voltage (VSW)......... 0.5V to (VIN + 0.5V)  
BST to SW.................................... 0.3V to +5V  
All Other Pins................................ 0.3V to +5V  
Continuous Power Dissipation .......(TJ = 25°C)(2)  
QFN10 (3×3mm)........................................2.5W  
SOIC8E .....................................................2.5W  
Junction Temperature..............................150°C  
Lead Temperature ...................................260°C  
Storage Temperature.............. 65°C to +150°C  
Thermal Resistance (4)  
QFN10 (3x3mm).....................50 ......12 ...°C/W  
θJA θJC  
SOIC8E..................................50 ......10 ...°C/W  
Notes:  
1) Exceeding these ratings may damage the device  
2) The maximum allowable power dissipation is a function of the  
maximum junction temperature TJ(MAX), the junction-to-  
ambient thermal resistance θJA, and the ambient temperature  
TA. The maximum allowable continuous power dissipation at  
any ambient temperature is calculated by PD(MAX)=(TJ(MAX)-  
TA)/ θJA. Exceeding the maximum allowable power dissipation  
will cause excessive die temperature, and the regulator will go  
into thermal shutdown. Internal thermal shutdown circuitry  
protects the device from permanent damage.  
Recommended Operating Conditions (3)  
Supply Voltage VIN .......................... 3.8V to 55V  
Output Voltage VOUT........................ 0.8V to 52V  
Maximum Junction Temp. (TJ) ..............+125°C  
3) The device is not guaranteed to function outside of its  
operating conditions.  
4) Measured on JESD51-7 4-layer board.  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
2
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
ELECTRICAL CHARACTERISTICS  
VIN = 12V, VEN = 2.5V, VCOMP = 1.4V, TJ= 40°C to +125°C, unless otherwise noted. Typical Values  
are at TJ=25°C.  
Parameter  
Symbol Condition  
Min  
Typ  
Max Units  
TJ=25°C  
0.780 0.797 0.820  
4.5V < VIN <  
55V  
Feedback Voltage  
VFB  
40°C TJ 85°C  
40°C TJ 125°C  
0.772  
0.766  
0.829  
0.829  
1.0  
V
Feedback Leakage Current  
Upper Switch On Resistance (5)  
Upper Switch Leakage  
Current Limit  
IFB  
0.1  
μA  
mΩ  
μA  
A
TJ=25°C  
=
175  
160  
250  
330  
VBST VSW  
5V  
RDS(ON)  
ISW  
400  
VEN = 0V, VSW = 0V  
TJ=25°C  
1
2.6  
2.2  
3.2  
4.5  
4.7  
ILIM  
Duty Cycle 60%  
COMP to Current Sense  
Transconductance (5)  
GCS  
5.7  
A/V  
Error Amp Voltage Gain (6)  
Error Amp Transconductance  
Error Amp Min Source current  
Error Amp Min Sink current  
400  
120  
10  
V/V  
µA/V  
µA  
ICOMP = ±3µA  
VFB = 0.7V  
VFB = 0.9V  
TJ=25°C  
10  
3.0  
µA  
2.7  
2.4  
3.3  
3.6  
V
VIN UVLO Threshold  
VIN UVLO Hysteresis  
Soft-Start Time (5)  
0.35  
0.5  
1
V
0V < VFB < 0.8V  
0.19  
0.8  
ms  
TJ=25°C  
1.2  
1.3  
20  
MHz  
RFREQ  
=
Oscillator Frequency  
fSW  
95kΩ  
0.7  
Shutdown Supply Current  
Quiescent Supply Current  
Thermal Shutdown (5)  
Minimum Off Time (5)  
Minimum On Time (5)  
IS  
VEN < 0.3V  
12  
µA  
µA  
°C  
ns  
ns  
V
IQ  
No load, VFB = 0.9V (no switching)  
Hysteresis = 20°C  
140  
150  
100  
100  
1.55  
200  
tOFF  
tON  
TJ=25°C  
1.4  
1.3  
1.7  
1.8  
EN Rising Threshold  
EN Threshold Hysteresis  
320  
mV  
Note:  
5) Derived from bench characterization. Not tested in production.  
6) Guaranteed by design. Not tested in production.  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
3
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
PIN FUNCTIONS  
QFN SOIC8  
Pin # Pin #  
Name Description  
Switch Node. Output from the high-side switch. A low VF Schottky rectifier to ground  
is required. The rectifier must be close to the SW pins to reduce switching spikes.  
1, 2  
3
1
2
3
SW  
EN  
Enable Input. Pull this pin below the specified threshold to shutdown the chip. Pull it  
up above the specified threshold or leaving it floating to enable the chip.  
Compensation. Output of the GM error amplifier. Control loop frequency  
compensation is applied to this pin.  
4
COMP  
Feedback. Input to the error amplifier. Sets the regulator voltage by comparing the  
tap of an external resistive divider connected between the output and GND to the  
internal +0.8V reference.  
5
4
FB  
GND, Ground. Connect as close as possible to the output capacitor and avoid the high-  
Exposed current switch paths. Connect exposed pad to GND plane for optimal thermal  
6
7
5
6
7
8
pad  
performance.  
Switching Frequency Program Input. Connect a resistor from this pin to ground to set  
the switching frequency.  
FREQ  
Input Supply. This supplies power to all the internal control circuitry, both BS  
regulators, and the high-side switch. Place a decoupling capacitor to ground close to  
this pin to minimize switching spikes.  
8, 9  
10  
VIN  
Bootstrap. Positive power supply for the internal floating high-side MOSFET driver.  
Connect a bypass capacitor between this pin and SW pin.  
BST  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
4
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
TYPICAL CHARACTERISTICS  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
5
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
TYPICAL CHARACTERISTICS (continued)  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
6
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
TYPICAL PERFORMANCE CHARACTERISTICS  
VIN = 12V, VOUT =3.3V, C1 = 4.7µF, C2 = 22µF, L1 = 10µH and TA = 25°C, unless otherwise noted.  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
7
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
VIN = 12V, VOUT =3.3V, C1 = 4.7µF, C2 = 22µF, L1 = 10µH and TA = 25°C, unless otherwise noted.  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
8
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
BLOCK DIAGRAM  
Figure 1: Functional Block Diagram  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
9
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
Enable Control  
The MPQ4560 has a dedicated enable control  
pin (EN) that can enable or disable the chip when  
the input voltage exceeds an upper threshold. Its  
falling threshold (turn-off) is 1.2V, and its rising  
threshold (turn-on) is 1.5V (300mV higher).  
OPERATION  
The MPQ4560 is an asynchronous, step-down,  
switching regulator with an integrated high-side,  
high-voltage,  
power  
MOSFET  
and  
a
programmable frequency. It provides a single  
highly-efficient solution with current-mode control  
for fast loop response and easy compensation. It  
features a wide input voltage range, internal soft-  
start control, and precise current limiting. Its very  
low operational quiescent current makes it  
suitable for battery-powered applications.  
When floating, an internal 1µA current source  
pulls EN up to ~3.0V to enable the chip. Pull-  
down requires a 1µA current.  
When EN is pulled below 1.2V, the chip enters its  
lowest shutdown current mode. When EN  
exceeds 0V but remains lower than its rising  
threshold, the chip remains in shutdown mode  
but the shutdown current increases slightly.  
PWM Control  
The MPQ4560 operates in a fixed-frequency,  
peak-current-control mode to regulate the output  
voltage at moderate-to-high output current. The  
internal clock initiates a PWM cycle. The power  
MOSFET turns ON and remains ON until its  
current reaches the value set by the COMP  
voltage. When the power switch is OFF, it  
remains OFF for at least 100ns before the next  
cycle starts. If the current in the power MOSFET  
does not reach the COMP-set current value  
within one PWM period, the power MOSFET  
remains ON, saving a turn-off operation.  
Under-Voltage Lockout  
Under-voltage lockout (UVLO) protects the chip  
from operating at insufficient supply voltage. The  
UVLO rising threshold is about 3.0V while its  
falling threshold is a consistent 2.6V.  
Internal Soft-Start  
Soft-start prevents the converter output voltage  
from overshooting during startup and short-circuit  
recovery. When the chip starts, the internal circuit  
generates a soft-start voltage (SS) ramping up  
Pulse-Skipping Mode  
from 0V to 2.6V. When it is less than the VREF  
,
Under light-load condition the switching  
frequency stretches the zero-voltage period to  
reduce the switching loss and driving loss.  
SS overrides VREF so the error amplifier uses SS  
as the reference. When SS exceeds VREF, VREF  
regains control.  
Error Amplifier  
Thermal Shutdown  
The error amplifier compares the FB pin voltage  
(VFB) to the internal reference (VREF) and outputs  
a current proportional to the difference. This  
Thermal shutdown prevents the chip from  
operating at exceedingly high temperatures.  
When the silicon die temperature exceeds its  
upper threshold, the whole chip shuts down.  
When the temperature is less than its lower  
threshold, the chip is enabled again.  
output  
current  
charges  
the  
external  
compensation network to form VCOMP, which  
controls the power MOSFET current.  
During operation, the minimum VCOMP is clamped  
to 0.9V and its maximum is clamped to 2.0V.  
COMP is internally pulled down to GND in  
shutdown mode. Do not pull VCOMP above 2.6V.  
Floating Driver and Bootstrap Charging  
An external bootstrap capacitor powers the  
floating power MOSFET driver. This floating  
driver has its own UVLO protection. This UVLO’s  
rising threshold is 2.2V with a hysteresis of  
150mV. The driver’s UVLO is soft-start related:  
When the bootstrap voltage hits its UVLO  
threshold, the soft-start circuit resets. To prevent  
noise, there is 20µs delay before the reset action.  
When bootstrap UVLO is gone, the reset is off  
and then the soft-start process resumes.  
Internal Regulator  
An internal 2.6V regulator powers most of the  
internal circuits. This regulator takes the VIN  
input and operates in the full VIN range. When VIN  
exceeds 3.0V, the output of the regulator is in full  
regulation. When VIN is less than 3.0V, the output  
decreases.  
The dedicated internal bootstrap regulator  
regulates and charges the bootstrap capacitor to  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
10  
MPQ4560 2A, 2MHz, 55V STEP-DOWN CONVERTER  
~5V. When the voltage between the BST and SW  
During a short circuit, the VFB voltage is low and  
pulls down VSS to ~100mV above VFB. Removing  
the short circuit causes the output voltage to  
recover with VSS. When VFB is high enough, the  
frequency and current limit return to normal  
values.  
nodes is less than its regulation, a PMOS pass  
transistor from VIN to BST turns ON. The  
charging current path is from VIN, BST and then  
to SW. An external circuit must provide enough  
voltage headroom to facilitate charging.  
As long as VIN is sufficiently higher than VSW, the  
bootstrap capacitor can charge. When the power  
MOSFET is ON, VIN≈VSW so the bootstrap  
capacitor cannot charge. When the external  
diode is ON, the difference between VIN and VSW  
is at its largest, thus making it the best period to  
charge. When there is no current in the inductor,  
VSW=VOUT so the difference between VIN and VOUT  
can charge the bootstrap capacitor.  
Startup and Shutdown  
If both VIN and VEN exceed their respective  
thresholds, the chip starts. The reference block  
initiates to generate a stable reference voltage  
and currents, and then the internal regulator is  
enabled. The regulator provides a stable supply  
for the remaining circuitries.  
While the internal supply rail is up, an internal  
timer holds the power MOSFET OFF for about  
50µs to blank the startup noise. When the  
internal soft-start block is enabled, it first holds its  
SS output low to ensure the remaining circuitries  
are ready and then slowly ramps up.  
At higher duty cycles, the time period available  
for bootstrap charging is shorter so the bootstrap  
capacitor may not sufficiently charge. If the  
internal circuit does not have sufficient voltage  
and the bootstrap capacitor is not charged, extra  
external circuitry can ensure the bootstrap  
voltage is within the normal operational region.  
Three events can shut down the chip: VEN LOW,  
VIN LOW and thermal shutdown. During  
shutdown, the power MOSFET turns OFF first to  
avoid any fault triggering. Then VCOMP and the  
internal supply rail drop.  
The DC quiescent current of the floating driver is  
about 20µA. Make sure the bleeding current at  
the SW node exceeds this value, such that:  
Programmable Oscillator  
VO  
An external resistor (RFREQ) from the FREQ pin to  
ground sets the MPQ4560 oscillating frequency.  
The value of RFREQ can be calculated from:  
IO  
20A  
(R1R2)  
Current Comparator and Current Limit  
100000  
A current-sense MOSFET accurately senses the  
power MOSFET’s current. The result goes to the  
high-speed current comparator for current-mode  
control.: When the power MOSFET turns ON, the  
comparator is first blanked till the end of the turn-  
on transition to avoid noise issues. The  
comparator then compares the power switch  
current to VCOMP. When the sensed current  
exceeds VCOMP, the comparator output is LOW,  
turning OFF the power MOSFET. The  
cycle-by-cycle maximum current of the internal  
power MOSFET is internally limited.  
RFREQ(kΩ) =  
-5  
fS(kHz)  
For example, for fSW=500kHz, RFREQ=195k.  
Short Circuit Protection  
When the output is shorted to the ground, the  
switching frequency folds back and the current  
limit falls to lower the short-circuit current. When  
VFB is zero, the current limit drops to about 50%  
of its full current limit. When VFB exceeds 0.4V,  
current limit reaches 100%.  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
11  
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
APPLICATION INFORMATION  
To determine the inductance, allow the inductor’s  
peak-to-peak ripple current to approximately  
equal 30% of the maximum switch current limit.  
Make sure that the peak inductor current is less  
than the maximum switch current limit. The  
inductance value can be calculated by:  
COMPONENT SELECTION  
Setting the Output Voltage  
A resistive voltage divider from the output voltage  
to FB pin sets the output voltage. The voltage  
divider divides the output voltage down to the  
feedback voltage by the ratio:  
VOUT  
VOUT  
R2  
L1=  
(1-  
)
VFB=VOUT  
fs ΔIL  
V
IN  
R1+R2  
Where VOUT is the output voltage, VIN is the input  
voltage, fS is the switching frequency, and ∆IL is  
the peak-to-peak inductor ripple current.  
Thus the output voltage is:  
R1+R2  
R2  
VOUT =VFB   
Choose an inductor that will not saturate under  
the maximum inductor peak current. The peak  
inductor current can be calculated by:  
For example, the value for R2 can be 10kΩ. With  
this value, R1 is:  
VOUT  
VOUT  
R1=12.5(VOUT -0.8)(KΩ)  
ILP ILOAD  
1  
2 fS L1  
V
IN  
So for a 3.3V output voltage, R2 is 10kΩ, and R1  
is 31.6kΩ.  
Where ILOAD is the load current.  
Table 1 lists several suitable inductors from  
various manufacturers. The different inductor  
choices include price vs. size requirements and  
any EMI requirements.  
Inductor  
The inductor provides constant current to the  
output load while being driven by the switched  
input voltage. A larger-value inductor will result in  
lower ripple current that will lower the output  
ripple voltage. However, a larger inductor value  
will be physically larger, have higher series  
resistance, or lower saturation current.  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
12  
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
Table 1: Inductor Selection Guide  
Inductance  
Max DCR  
(Ω)  
Current Rating  
(A)  
Dimensions  
Part Number  
(µH)  
L × W × H (mm3)  
Wurth Electronics  
7447789004  
744066100  
744771115  
744771122  
TDK  
4.7  
10  
15  
22  
0.033  
0.035  
0.025  
0.031  
2.9  
3.6  
7.3×7.3×3.2  
10×10×3.8  
12×12×6  
3.75  
3.37  
12×12×6  
RLF7030T-4R7  
SLF10145T-100  
SLF12565T-150M4R2  
SLF12565T-220M3R5  
Toko  
4.7  
10  
15  
22  
0.031  
0.0364  
0.0237  
0.0316  
3.4  
3
7.3×6.8×3.2  
10.1×10.1×4.5  
12.5×12.5×6.5  
12.5×12.5×6.5  
4.2  
3.5  
FDV0630-4R7M  
919AS-100M  
919AS-160M  
919AS-220M  
4.7  
10  
16  
22  
0.049  
0.0265  
0.0492  
0.0776  
3.3  
4.3  
3.3  
3
7.7×7×3  
10.3×10.3×4.5  
10.3×10.3×4.5  
10.3×10.3×4.5  
Output Rectifier Diode  
Choose a diode whose maximum reverse voltage  
rating exceeds the maximum input voltage, and  
whose current rating exceeds the maximum load  
current. Table 2 lists example Schottky diodes  
and manufacturers.  
The output rectifier diode supplies the current to  
the inductor when the high-side switch is OFF.  
Use a Schottky diode to reduce losses from the  
diode forward voltage and recovery times.  
Table 2: Diode Selection Guide  
Voltage/  
Current  
Rating  
Diodes  
Manufacturer  
B290-13-F  
B380-13-F  
90V, 2A  
80V, 3A  
100V, 2A  
100V, 3A  
Diodes Inc.  
Diodes Inc.  
Central Semi  
Central Semi  
CMSH2-100M  
CMSH3-100MA  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
13  
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
Input Capacitor  
VOUT  
VOUT  
ΔVOUT  
1  
RESR  
The input current to the step-down converter is  
discontinuous and requires a capacitor to supply  
the AC current to the step-down converter while  
maintaining the DC input voltage. Use capacitors  
with low equivalent series resistances (ESR) for  
the best performance. Ceramic capacitors are  
best, but tantalum or low-ESR electrolytic  
capacitors may also suffice.  
fS L  
VIN  
The characteristics of the output capacitor also  
affect the stability of the regulation system. The  
MPQ4560 can be optimized for a wide range of  
capacitances and ESR values.  
Compensation Components  
MPQ4560 employs current-mode control for easy  
compensation and fast transient response. The  
COMP pin controls the system stability and  
transient response. The COMP pin is the output  
of the internal error amplifier. A series capacitor-  
For simplification, choose the input capacitor with  
an RMS current rating greater than half of the  
maximum load current. The input capacitor (C1)  
can be electrolytic, tantalum, or ceramic.  
resistor  
combination  
sets  
a
pole-zero  
When using electrolytic or tantalum capacitors,  
place a small, high-quality, ceramic capacitor  
(0.1μF) as close to the IC as possible. When  
using ceramic capacitors, make sure that they  
have enough capacitance to provide sufficient  
charge to prevent excessive voltage ripple at the  
input. The input voltage ripple caused by  
capacitance is approximately:  
combination to control the control system’s  
characteristics. The DC gain of the voltage  
feedback loop is:  
VFB  
AVDC RLOAD GCS AVEA  
VOUT  
Where  
AVEA is the error-amplifier voltage gain,  
400V/V;  
ILOAD  
VOUT  
VOUT  
VIN   
1  
fS C1  
VIN  
V
IN  
GCS is the current-sense transconductance,  
5.6A/V; and  
Output Capacitor  
The output capacitor (C2) maintains the DC  
output voltage. Use ceramic, tantalum, or low-  
ESR electrolytic capacitors. Low-ESR capacitors  
are preferred to keep the output voltage ripple  
low. The output voltage ripple can be estimated  
as:  
RLOAD is the load resistor value.  
The system has two important poles: One from  
the compensation capacitor (C3) and the output  
resistor of error amplifier, and the other due to  
the output capacitor and the load resistor. These  
poles are located at:  
   
VOUT  
VOUT  
VIN  
1
   
RESR  
VOUT  
1  
   
fS L  
8fS C2  
GEA  
   
fP1   
2πC3AVEA  
Where L is the inductor value and RESR is the  
ESR value of the output capacitor.  
1
fP2  
For ceramic capacitors, the capacitance  
dominates the impedance at the switching  
frequency and contributes the most to the output  
voltage ripple. For simplification, the output  
voltage ripple can be estimated by:  
2πC2RLOAD  
Where,  
transconductance, 120μA/V.  
GEA  
is the error-amplifier  
The system has one important zero due to the  
compensation capacitor and the compensation  
resistor (R3). This zero is located at:  
VOUT  
VOUT  
ΔVOUT  
1  
8 fS2 L C2  
V
IN  
1
For tantalum or electrolytic capacitors, the ESR  
dominates the impedance at the switching  
frequency. For simplification, the output ripple is  
approximately:  
fZ1   
2πC3R3  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
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© 2013 MPS. All Rights Reserved.  
14  
MPQ4560 2A, 2MHz, 55V STEP-DOWN CONVERTER  
The system may have another significant zero if  
the output capacitor has a large capacitance or a  
high ESR value. This zero is located at:  
values, set the compensation zero (fZ1) <0.25 ×fC  
to provide sufficient phase margin. C3 is then:  
4
C3   
1
2πR3fC  
fESR  
2πC2RESR  
3. C5 is required if the ESR zero of the output  
capacitor is located at <0.5 ×fSW , or the following  
relationship is valid:  
In this case, a third pole set by the compensation  
capacitor (C5) and the compensation resistor can  
compensate for the effect of the ESR zero. This  
pole is located at:  
fS  
2
1
2πC2RESR  
1
fP3  
If this is the case, use C5 to set the pole (fP3) at  
the location of the ESR zero. Determine the C5:  
2πC5R3  
The goal of compensation design is to shape the  
converter transfer function for a desired loop  
gain. The system crossover frequency where the  
feedback loop has unity gain is important: Lower  
crossover frequencies result in slower line and  
load transient responses, while higher crossover  
frequencies lead to system instability. Generally,  
set the crossover frequency to ~0.1×fSW.  
C2RESR  
C5   
R3  
High-Frequency Operation  
The switching frequency of MPQ4560 can be  
programmed up to 2MHz by an external resistor.  
The minimum on time of MPQ4560 is about  
100ns (typ). Pulse-skipping occurs more readily  
at higher switching frequencies due to the  
minimum ON time.  
Table 3: Compensation Values for Typical  
Output Voltage/Capacitor Combinations  
VOUT  
(V)  
C2  
(µF)  
R3  
(kΩ)  
C3  
(pF)  
C6  
(pF)  
L (µH)  
4.7  
Since the internal bootstrap circuitry has higher  
impedance, which may not sufficiently charge the  
bootstrap capacitor during each (1D)×τS  
charging period, add an external bootstrap  
charging diode if the switching frequency is about  
2MHz (see External Bootstrap Diode section for  
detailed implementation information).  
1.8  
2.5  
3.3  
5
33  
22  
22  
33  
22  
32.4  
26.1  
68.1  
47.5  
16  
680  
680  
220  
330  
470  
None  
None  
None  
None  
2
4.7 - 6.8  
6.8 -10  
15 - 22  
10  
With higher switching frequencies, the capacitors’  
inductive reactances (XL) dominate so that the  
ESL of input/output capacitors determine the  
input/output ripple voltages at higher switching  
frequencies. As a result, use high-frequency  
ceramic capacitors as input decoupling  
capacitors and output filtering capacitors for high-  
frequency operation.  
12  
To optimize the compensation components for  
conditions not listed in Table 3, follow these  
steps:  
1. Choose R3 to set the desired crossover  
frequency:  
External Bootstrap Diode  
An external bootstrap diode from the 5V rail to  
the BST pin may enhance the efficiency under  
the following conditions:  
2πC2f VOUT  
R3   
C   
GEAGCS  
VFB  
There is a 5V rail available in the system;  
VIN 5V;  
Where fC is the desired crossover frequency.  
2. Choose C3 to achieve the desired phase  
margin. For applications with typical inductor  
3.3V<VOUT<5V; and  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
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15  
MPQ4560 2A, 2MHz, 55V STEP-DOWN CONVERTER  
for high duty-cycle operation (when VOUT/VIN >  
65%).  
The bootstrap diode can be a low cost one such  
as IN4148 or BAT54.  
Figure 2: External Bootstrap Diode  
At no-load or light-load, the converter may  
operate in pulse-skipping mode in order to  
maintain output-voltage regulation. Thus there is  
less time to refresh the BS voltage. For sufficient  
gate voltage during pulse-skipping, VINVOUT>3V.  
For example, if the VOUT=3.3V, VIN must be  
exceed 3.3V+3V=6.3V to maintain sufficient BST  
voltage at no-load or light-load. To meet this  
requirement, the EN pin can program the input  
UVLO voltage to VOUT+3V.  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
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16  
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
TYPICAL APPLICATION CIRCUITS  
Figure 3: Typical Application, 1.8V Output  
Figure 4: Typical Application, 5V Output  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
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17  
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
3) Route SW away from sensitive analog  
areas such as FB.  
PCB LAYOUT GUIDE  
PCB layout is very important for stable  
operation. Try to duplicate the EVB layout for  
optimum performance.  
4) Connect IN, SW, and especially GND to  
large copper surfaces to cool the chip to  
improve thermal performance and long-  
term reliability.  
For changes, please follow these guidelines  
and use Figure 5 as reference.  
5) Place the compensation components close  
to the MPQ4560. Avoid placing the  
compensation components close to or  
under high dv/dt SW node, or inside the  
high di/dt power loop. If necessary, add a  
ground plane to isolate the loops.  
1) Place the input decoupling capacitor and  
the catch diode as close to the MPQ4560  
(VIN pin, SW pin and PGND) as possible,  
with traces that are very short and fairly  
wide. This can help to greatly reduce the  
voltage spike on SW node, and the EMI  
noise.  
6) Switching loss increases at higher  
frequencies.  
To  
improve  
thermal  
2) Ensure all feedback connections are short  
and direct. Place the feedback resistors  
and compensation components as close to  
the chip as possible. Try to run the  
feedback trace as far from the inductor and  
noisy power traces as possible. Run the  
feedback trace on the side of the PCB  
opposite of the inductor with a ground  
plane separating the two.  
conduction, add a grid of thermal vias  
under the exposed pad. Use small vias  
(15mil barrel diameter) so that the hole fills  
during the plating process: larger vias can  
cause solder-wicking during the reflow  
process. The pitch (distance between the  
centers) between these thermal vias is  
typically 40mil.  
MPQ4560 Typical Application Circuit  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
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© 2013 MPS. All Rights Reserved.  
18  
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
GND  
L1  
R1  
SW  
C4  
D1  
R6  
C2  
C1  
Vin  
GND  
GND  
Vo  
TOP Layer  
Bottom Layer  
MPQ4560DN Layout Guide  
GND  
L1  
R1  
SW  
C4  
D1  
R6  
C2  
C1  
Vin  
GND  
GND  
Vo  
TOP Layer  
Bottom Layer  
MPQ4560DQ Layout Guide  
Figure 5: MPQ4560 Typical Application Circuit and PCB Layout Guide  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
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© 2013 MPS. All Rights Reserved.  
19  
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
PACKAGE INFORMATION  
3mm × 3mm QFN10 (EXPOSED PAD)  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
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© 2013 MPS. All Rights Reserved.  
20  
MPQ4560 2A, 2MHz, 55V, STEP-DOWN CONVERTER  
SOIC8E  
NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee that third  
party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not  
assume any legal responsibility for any said applications.  
MPQ4560 Rev. 1.1  
3/29/2013  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2013 MPS. All Rights Reserved.  
21  

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