MX27C8111PC-90 [Macronix]
8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE; 8M - BIT [ 1M ×8 / 512K X16 ]的CMOS OTP配页模式ROM型号: | MX27C8111PC-90 |
厂家: | MACRONIX INTERNATIONAL |
描述: | 8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE |
文件: | 总15页 (文件大小:490K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY
MX27C8111
8M-BIT [1M x8/512K x16] CMOS OTP ROM
WITH PAGE MODE
FEATURES
• With Page Mode function, 8-word/16-byte page
• 1M x 8 or 512K x 16 organization
• +12.5V programming voltage
• Completely TTL compatible
• Operating current: 60mA
• Standby current: 100uA
• Fast access time:90/100/120/150 ns
• Page mode access time 50/60/75 ns
• Totally static operation
• Package type:
- 42 pin plastic DIP
- 44 pin SOP
GENERAL DESCRIPTION
The MX27C8111 is a 8M-bit, One Time Programmable
Read Only Memory with page mode. It is organized as
1M x 8 or 512K x 16, operates from a single + 5 volt
supply, has a static standby mode, and features fast
singleaddresslocationprogramming. Allprogramming
signals are TTL levels, requiring a single pulse. For
programming outside from the system, existing
EPROM programmers may be used. The MX27C8111
supportsaintelligentfastprogrammingalgorithmwhich
canresultinprogrammingtimeoflessthantwominutes.
MX27C8111 provides Page Read Access Mode which
can greatly reduce the read access time. Normal read
accesstimeandPageModereadaccesstime isasfast
as 90/50ns. It is designed to be compatible with all
microprocessors and similar applications in which high
perofmrance, large bit storage and simple interfacing
are important design considerations.
This One Time Programmable Read Only Memory is
packagedinindustrystandard42pindual-in-lineplastic
package and 44 pin SOP packages.
PIN CONFIGURATIONS
PDIP
SOP
NC
NC
A8
A9
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A18
A17
A7
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A8
2
A9
3
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
Q15/A-1
Q7
A6
4
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
Q15/A1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
11
12
13
14
15
16
17
18
19
20
21
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
Q14
Q6
Q13
Q5
Q12
Q4
VCC
P/N: PM0329
REV. 2.6, AUG. 22, 2001
1
MX27C8111
PIN DESCRIPTION
BLOCK DIAGRAM
SYMBOL
A0~A18
Q0~Q14
CE
PIN NAME
CE
OE
Q0~Q14
Q15/A-1
CONTROL
LOGIC
OUTPUT
Address Input
BUFFERS
BYTE/VPP
Data Input/Output
Chip Enable Input
Output Enable Input
Word/Byte Selection
/Program Supply Voltage
Q15(Word mode)/
LSB addr. (Byte mode)
Power Supply Pin (+5V)
Ground Pin
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
Y-DECODER
X-DECODER
Y-SELECT
OE
BYTE/VPP
A0~A18
8M BIT
CELL
ADDRESS
INPUTS
Q15/A-1
MAXTRIX
VCC
GND
VCC
GND
TRUTH TABLE OF BYTE FUNCTION
BYTE MODE(BYTE = GND)
CE
H
OE
X
Q15/A-1
MODE
Q0-Q7
High Z
High Z
DOUT
SUPPLY CURRENT
Standby(ICC2)
X
Non selected
Non selected
Selected
L
H
X
Operating(ICC1)
Operating(ICC1)
L
L
A-1 input
WORD MODE(BYTE = VCC)
CE
H
OE
X
Q15/A-1
High Z
High Z
DOUT
MODE
Q0-Q14
High Z
High Z
DOUT
SUPPLY CURRENT
Standby(ICC2)
Non selected
Non selected
Selected
L
H
Operating(ICC1)
Operating(ICC1)
L
L
NOTE : X = H or L
P/N: PM0329
REV. 2.6, AUG. 22, 2001
2
MX27C8111
at VIH, VPP at its programming voltage.
FUNCTIONAL DESCRIPTION
THE PROGRAMMING OF THE MX27C8111
AUTO IDENTIFY MODE
When the MX27C8111 is delivered, the chip has all
8Mbitsinthe"ONE"orHIGHstate."ZEROs"areloaded
into the MX27C8111 through the procedure of
programming.
Theautoidentifymodeallowsthereadingoutofabinary
code from an One Time Programmable Read Only
Memory that will identify its manufacturer and device
type. This mode is intended for use by programming
equipmentforthepurposeofautomaticallymatchingthe
device to be programmed with its corresponding
programming algorithm. This mode is functional in the
25°C±5°C ambient temperature range that is required
when programming the MX27C8111.
Forprogramming,thedatatobeprogrammedisapplied
with 16 bits in parallel to the data pins.
Vcc must be applied simultaneously or before Vpp, and
removed simultaneously or after Vpp. When
programming an MXIC One Time Programmable Read
Only Memory, a 0.1uF capacitor is required across Vpp
and ground to suppress spurious voltage transients
which may damage the device.
To activate this mode, the programming equipment
must force 12.0±0.5VonaddresslineA9ofthedevice.
Two identifier bytes may then be sequenced from the
device outputs by toggling address line A0 from VIL to
VIH. All other address lines must be held at VIL during
auto identify mode.
FAST PROGRAMMING
Byte 0 ( A0 = VIL) represents the manufacturer code,
andbyte1(A0=VIH), thedeviceidentifiercode. Forthe
MX27C8111, these two identifier bytes are given in the
Mode Select Table. All identifiers for manufacturer and
device codes will possess odd parity, with the MSB
(Q15) defined as the parity bit.
Thedeviceissetupinthefastprogrammingmodewhen
the programming voltage VPP = 12.75V is applied, with
VCC = 6.25 V and OE = VIH (Algorithm is shown in
Figure 1). The programming is achieved by applying a
single TTL low level 50us pulse to the CE input after
addresses and data line are stable. If the data is not
verified, an additional pulse is applied for a maximum of
25 pulses. This process is repeated while sequencing
through each address of the device. When the
programmingmodeiscompleted,thedatainalladdress
is verified at VCC = VPP = 5V ±10%.
READ MODE
The MX27C8111 provides page mode with 8 words/16
bytes per page. In order to get the benefit of fast page
read, the user should keep chip enable(CE) low and
toggle address A0~A2 in word mode or A-1~A2 in byte
mode. PageReadaccesstime(tPA)isequaltothedelay
from address stable to data output. It is twice as fast as
normal tACC and is highly recommended.
PROGRAM INHIBIT MODE
Programming of multiple MX27C8111's in parallel with
different data is also easily accomplished by using the
Program Inhibit Mode. Except for CE and OE, all like
inputs of the parallel MX27C8111 may be common. A
TTL low-level program pulse applied to an MX27C8111
CE input with VPP = 12.5 ± 0.5 V will program the
MX27C8111. A high-level CE input inhibits the other
MX27C8111s from being programmed.
WORD-WIDE MODE
With BYTE/VPP at VCC ±0.2V outputs Q0-7 present
data Q0-7 and outputs Q8-15 present data Q8-15, after
CE and OE are appropriately enabled.
PROGRAM VERIFY MODE
BYTE-WIDE MODE
Verification should be performed on the programmed
bits to determine that they were correctly programmed.
TheverificationshouldbeperformedwithOE atVIL,CE
With BYTE/VPP at GND ±0.2V, outputs Q8-15 are tri-
stated. IfQ15/A-1=VIH, outputsQ0-7presentdatabits
P/N: PM0329
REV. 2.6, AUG. 22, 2001
3
MX27C8111
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connectedtotheREADlinefromthesystemcontrolbus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits
Q0-7.
STANDBY MODE
The MX27C8111 has a CMOS standby mode which
reduces the maximum VCC current to 100 uA. It is
placed in CMOS standby when CE is at VCC ±0.3 V.
The MX27C8111 also has a TTL-standby mode which
reduces the maximum VCC current to 1.5 mA. It is
placed in TTL-standby when CE is at VIH. When in
standby mode, the outputs are in a high-impedance
state, independent of the OE input.
SYSTEM CONSIDERATIONS
During the switch between active and standby
conditions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magnitude
of these transient current peaks is dependent on the
outputcapacitanceloadingofthedevice. Ataminimum,
a0.1uFceramiccapacitor(highfrequency,lowinherent
inductance) should be used on each device between
Vcc and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on One Time
ProgrammableReadOnlyMemoryarrays, a4.7uFbulk
electrolytic capacitor should be used between VCC and
GND for each eight devices. The location of the
capacitor should be close to where the power supply is
connected to the array.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-
line control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not
occur.
It is recommended that CE be decoded and used as the
MODE SELECT TABLE
BYTE/
MODE
CE
OE
VIL
VIL
VIL
VIH
X
A9
X
A0
X
Q15/A-1
Q15 Out
VIH
VPP(5)
VCC
GND
GND
X
Q8-14
Q0-7
Read (Word)
VIL
VIL
VIL
VIL
VIH
VIL
VIH
VIH
VIL
VIL
Q8-14 Out
High Z
High Z
High Z
High Z
Q8-14 In
Q8-14 Out
High Z
00H
Q0-7 Out
Q8-15 Out
Q0-7 Out
High Z
High Z
Q0-7 In
Q0-7 Out
High Z
C2H
Read (Upper Byte)
Read (Lower Byte)
Output Disable
Standby
X
X
X
X
VIL
X
X
High Z
High Z
Q15 In
Q15 Out
High Z
0B
X
X
X
Program
VIH
VIL
VIH
VIL
VIL
X
X
VPP
VPP
VPP
VCC
VCC
Program Verify
Program Inhibit
Manufacturer Code(3)
Device Code(3)
X
X
X
X
VH
VH
VIL
VIH
1B
38H
16H
4. See DC Programming Characteristics for VPP voltages.
5. BYTE/VPP is intended for operation under DC Voltage conditions
only.
NOTES: 1. VH = 12.0V ±0.5V
2. X = Either VIH or VIL.
3. A1-A8, A10-A18 = VIL(for auto select)
6. Manufacture code = 00C2H
Device code = B816H
P/N: PM0329
REV. 2.6, AUG. 22, 2001
4
MX27C8111
FIGURE 1. FAST PROGRAMMING FLOW CHART
START
ADDRESS = FIRST LOCATION
VCC = 6.25V
VPP = 12.75V
X = 0
PROGRAM ONE 50us PULSE
INCREMENT X
INTERACTIVE
SECTION
YES
X = 25?
NO
FAIL
VERIFY WORD
?
PASS
NO
LAST ADDRESS
INCREMENT ADDRESS
FAIL
YES
VCC = VPP = 5.25V
VERIFY SECTION
FAIL
DEVICE FAILED
VERIFY ALL WORDS
?
PASS
DEVICE PASSED
P/N: PM0329
REV. 2.6, AUG. 22, 2001
5
MX27C8111
SWITCHING TEST CIRCUITS
DEVICE
UNDER
TEST
1.8K ohm
+5V
DIODES = IN3064
OR EQUIVALENT
CL
6.2K ohm
CL = 100 pF including jig capacitance
SWITCHING TEST WAVEFORMS
2.0V
0.8V
2.0V
TEST POINTS
AC driving levels
0.8V
OUTPUT
INPUT
AC TESTING: AC driving levels are 2.4V/0.4V.
Input pulse rise and fall times are < 10ns.
P/N: PM0329
REV. 2.6, AUG. 22, 2001
6
MX27C8111
ABSOLUTE MAXIMUM RATINGS
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended period may affect reliability.
RATING
VALUE
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9 & VPP
0oC to 70oC
-65oC to 125oC
-0.5V to 7.0V
NOTICE:
-0.5V to VCC + 0.5V
-0.5V to 7.0V
Specifications contained within the following tables are subject to
change.
-0.5V to 13.5V
DC/AC Operating Conditions for Read Operation
MX27C8111
-90
-10
-12
-15
Operating Temperature
Vcc Power Supply
Commercial
0°C to 70°C
5V ±5%
0°C to 70°C
5V ±10%
0°C to 70°C
5V ±10%
0°C to 70°C
5V ±10%
DC CHARACTERISTICS
SYMBOL
VOH
VOL
VIH
PARAMETER
MIN.
MAX.
UNIT
CONDITIONS
Output High Voltage
Output Low Voltage
Input High Voltage
2.4
V
V
IOH = -0.4mA
IOL = 2.1mA
0.4
VCC + 0.5
0.8
2.0
-0.3
-10
-10
V
VIL
Input Low Voltage
V
ILI
Input Leakage Current
Output Leakage Current
VCC Power-Down Current
VCC Standby Current
VCC Active Current
VPP Supply Current Read
10
uA
uA
uA
mA
mA
uA
VIN = 0 to 5.5V
ILO
10
VOUT = 0 to 5.5V
CE = VCC ±0.3V
ICC3
ICC2
ICC1
IPP
100
1.5
CE = VIH
60
CE = VIL, f=5MHz, Iout = 0mA
CE = OE = VIL, VPP = 5.5V
10
CAPACITANCE TA = 25oC, f = 1.0 MHz (Sampled only)
SYMBOL
CIN
PARAMETER
TYP.
8
MAX.
12
UNIT
pF
CONDITIONS
VIN = 0V
Input Capacitance
Output Capacitance
VPP Capacitance
COUT
CVPP
8
12
pF
VOUT = 0V
VPP = 0V
18
25
pF
P/N: PM0329
REV. 2.6, AUG. 22, 2001
7
MX27C8111
AC CHARACTERISTICS
27C8111-90
27C8111-10
27C8111-12
27C8111-15
SYMBOL PARAMETER
MIN.
MAX.
90
MIN. MAX. MIN. MAX. MIN. MAX. UNIT CONDITIONS
tACC
tCE
tPA
Address to Output Delay
Chip Enable to Output Delay
Page Address to Output Delay
Output Enable to Output Delay
OE High to Output Float,
or CE High to Output Float
Output Hold from Address,
CE or OE which ever occurred first
BYTE Access Time
100
100
50
120
120
60
150
150
75
ns
ns
ns
ns
ns
CE = OE = VIL
OE = VIL
90
50
CE = OE =VIL
CE = VIL
tOE
tDF
45
45
50
65
0
30
0
30
0
35
0
0
50
0
tOH
0
0
ns
tBHA
tOHB
tBHZ
90
70
100
70
120
70
150
70
ns
ns
ns
BYTE Output Hold Time
0
0
0
0
BYTE Output Delay Time
tBLZ
BYTE Output Set Time
10
10
10
10
ns
DC PROGRAMMING CHARACTERISTICS TA = 25oC ±5oC
SYMBOL
VOH
VOL
VIH
PARAMETER
MIN.
MAX.
UNIT
CONDITIONS
IOH = -0.40mA
IOL = 2.1mA
Output High Voltage
2.4
V
Output Low Voltage
0.4
V
Input High Voltage
2.0
VCC + 0.5
0.8
V
VIL
Input Low Voltage
-0.3
-10
V
ILI
Input Leakage Current
A9 Auto Select Voltage
VCC Supply Current (Program & Verify)
VPP Supply Current(Program)
Fast Programming Supply Voltage
Fast Programming Voltage
10
uA
V
VIN = 0 to 5.5V
VH
11.5
12.5
50
ICC3
IPP2
VCC1
VPP1
mA
mA
V
30
CE = VIL, OE = VIH
6.00
12.5
6.50
13.0
V
AC PROGRAMMING CHARACTERISTICS TA = 25oC ±5oC
SYMBOL
tAS
PARAMETER
MIN.
2.0
2.0
2.0
0
TYP.
MAX.
UNIT
Address Setup Time
OE Setup Time
us
us
us
us
us
ns
us
us
us
ns
tOES
tDS
Data Setup Time
tAH
Address Hold Time
Data Hold Time
tDH
2.0
0
tDFP
tVCS
tVPS
tPW
Chip Enable to Output Float Delay
VCC Setup Time
130
150
2.0
2.0
BYTE/VPP Setup Time
CE initial Program Pulse Width
Data valid from OE
50
tOE
P/N: PM0329
REV. 2.6, AUG. 22, 2001
8
MX27C8111
WAVEFORMS
NORMAL READ CYCLE(WORD MODE)
ADDRESS
INPUTS
DATA ADDRESS
tACC
CE
OE
tCE
tDF
DATA
OUT
VALID DATA
tOE
tOH
PAGE MODE READ CYCLE
A4-A18
VALID ADDRESS
A0~A2 (Word mode)
A-1~A2 (Byte mode)
tACC
CE
tPA
tPA
tPA
OE
tDF
tOH
tOE
DATA OUT
P/N: PM0329
REV. 2.6, AUG. 22, 2001
9
MX27C8111
WAVEFORMS
NORMAL READ CYCLE(BYTE MODE)
HIGH-Z
HIGH-Z
A-1
tACC
tOH
BYTE/VPP
Q0-Q7
VALID DATA
VALID DATA
tBHA
tOHB
VALID DATA
Q15-Q8
tBHZ
tBLZ
FAST PROGRAMMING ALGORITHM WAVEFORM
PROGRAM
VERIFY
VIH
Addresses
VALID ADDRESS
VIL
tAH
tAS
DATA OUT VALID
DATA SET
DATA
tDFP
tDS
tDH
VPP1
VCC
BYTE/VPP
tVPS
tVCS
VCC1
VCC
VCC
CE
VIH
VIL
tOE
tOES
tPW
VIH
VIL
OE
P/N: PM0329
REV. 2.6, AUG. 22, 2001
10
MX27C8111
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO.
ACCESS TIME
OPERATING CURRENT
STANDBY CURRENT
PACKAGE
(ns)
90
MAX.(mA)
MAX.(uA)
100
MX27C8111MC-90
MX27C8111MC-10
MX27C8111MC-12
MX27C8111MC-15
MX27C8111PC-90
MX27C8111PC-10
MX27C8111PC-12
MX27C8111PC-15
60
60
60
60
60
60
60
60
44 PIn SOP (ROM pin out)
44 PIn SOP (ROM pin out)
44 Pin SOP(ROM pin out)
44 Pin SOP(ROM pin out)
42 PIn PDIP (ROM pin out)
42 PIn PDIP(ROM pin out)
42 Pin PDIP(ROM pin out)
42 Pin PDIP(ROM pin out)
100
120
150
90
100
100
100
100
100
120
150
100
100
100
P/N: PM0329
REV. 2.6, AUG. 22, 2001
11
MX27C8111
PACKAGE INFORMATION
42-PIN PLASTIC DIP(600 mil)
P/N: PM0329
REV. 2.6, AUG. 22, 2001
12
MX27C8111
44-PIN PLASTIC SOP
P/N: PM0329
REV. 2.6, AUG. 22, 2001
13
MX27C8111
Revision History
Revision No. Description
Page
Date
2.0
1) Eliminate Interactive Programming Mode.
5/30/1997
2) Programming pulse change, from 100us to 50us
IPP : 100uA---->10uA
2.1
2.2
2.3
2.4
2.5
2.6
8/8/1997
Add 100ns speed grade.
1/31/1998
Add 90ns speed grade.
4/07/1998
90ns speed grade VCC=5V±10%-->5V±5%
Correct 42PIN plastic DIP package information error
To modify Package Information
5/06/1998
P12
MAR/02/2000
AUG/22/2001
P12,13
P/N: PM0329
REV. 2.6, AUG. 22, 2001
14
MX27C8111
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15
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