MX29LV800CTMC-70_技术文档

MX29LV800C T/B

8M-BIT[1Mx8/512Kx16]CMOSSINGLEVOLTAGE

3VONLYFLASHMEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Singlepowersupplyoperation

• Ready/Busy# pin (RY/BY#)

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion

- 3.0V only operation for read, erase and program

operation

• Fast access time: 45R/55R/70/90ns

• Lowpowerconsumption

• Sectorprotection

- Hardware method to disable any combination of

sectors from program or erase operations

-Temporarysectorunprotectedallowscodechanges

in previously locked sectors.

- 30mA maximum active current

- 0.2uA typical standby current

• Commandregisterarchitecture

• CFI (Common Flash Interface) compliant

- Flash device parameters stored on the device and

provide the host system to access

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Package type:

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• FullycompatiblewithMX29LV800BT/BBdevice

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability

- Automatically program and verify data at specified

address

- 44-pin SOP

- 48-pin TSOP

• Erasesuspend/EraseResume

- 48-ball CSP (6 x 8mm)

- Suspends sector erase operation to read data from,

orprogramdatato,any sectorthatisnotbeingerased,

then resumes the erase

- 48-ball CSP (4 x 6mm)

- All Pb-free devices are RoHS Compliant

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• Status Reply

- Data# polling & Toggle bit for detection of program

anderaseoperationcompletion

• 10 years data retention

GENERAL DESCRIPTION

The MX29LV800C T/B is a 8-mega bit Flash memory

organized as 1M bytes of 8 bits or 512K words of 16

bits. MXIC's Flash memories offer the most cost-effec-

tive and reliable read/write non-volatile random access

memory. The MX29LV800C T/B is packaged in 44-pin

SOP, 48-pinTSOP, and 48-ball CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV800C T/B uses a 2.7V~3.6V VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29LV800C T/B offers access time as

fast as 45ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV800C T/B has separate chip enable

(CE#) and output enable (OE#) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV800CT/B uses a command register to manage

this functionality. The command register allows for 100%

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1

MX29LV800C T/B

PIN CONFIGURATIONS

44 SOP(500 mil)

PIN DESCRIPTION

SYMBOL PIN NAME

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

RESET#

WE#

A8

A9

A10

A11

A12

A13

A14

RY/BY#

A18

A17

A7

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

A0~A18

Address Input

Q0~Q14 Data Input/Output

A6

A5

A4

A3

A2

A1

A0

CE#

GND

OE#

Q0

Q8

Q1

Q9

Q2

Q10

Q3

Q11

Q15/A-1

CE#

Q15(Word mode)/LSB addr(Byte mode)

Chip Enable Input

WE#

Write Enable Input

A15

A16

BYTE#

Word/Byte Selection input

BYTE#

GND

Q15/A-1

Q7

Q14

Q6

Q13

Q5

Q12

Q4

RESET# Hardware Reset Pin

OE#

Output Enable Input

Ready/Busy Output

RY/BY#

VCC

GND

NC

Power Supply Pin (2.7V~3.6V)

Ground Pin

VCC

Pin Not Connected Internally

48TSOP (StandardType) (12mm x 20mm)

A15

A14

A13

A12

A11

A10

A9

1

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

A16

BYTE#

GND

Q15/A-1

Q7

2

3

4

5

6

Q14

Q6

7

A8

8

Q13

Q5

NC

9

NC

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

Q12

Q4

WE#

RESET#

NC

VCC

Q11

Q3

MX29LV800CT/CB

NC

RY/BY#

A18

A17

A7

Q10

Q2

Q9

Q1

A6

Q8

A5

Q0

A4

OE#

GND

CE#

A0

A3

A2

A1

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REV. 1.4, APR. 24, 2006

2

MX29LV800C T/B

48-Ball CSP (Ball Pitch = 0.8 mm,Top View, Balls Facing Down, 6 x 8 mm)

Q15/

A-1

GND

A13

A9

A12

A8

A14

A15

A16

BYTE#

6

5

4

3

2

1

A10

NC

Q7

Q5

Q14

Q12

Q13

Q6

Q4

A11

NC

RE-

SET#

WE#

VCC

RY/

BY#

NC

A17

A4

A18

A6

NC

A5

A1

Q2

Q0

Q10

Q8

Q11

Q9

Q3

Q1

A7

A3

A2

C

GND

A0

E

CE#

F

OE#

G

A

B

D

H

48-Ball CSP (Balls Facing Down, 4 x 6 mm)

NC

A11

WE#

A9

A2

A1

A0

A4

A6

A17

NC

6

5

4

3

2

1

A3

A5

A7

A10

A8

A13

A12

A14

A15

A18

CE#

Q8

Q10

Q9

Q4

Q5

Q11

Q6

A16

Q7

GND

OE#

Q0

NC

Q2

NC

Q1

C

Q13

Q15

GND

Q3

E

VCC

F

Q12

G

Q14

J

A

B

D

H

K

L

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3

MX29LV800C T/B

BLOCK STRUCTURE

TABLE 1:MX29LV800CT SECTOR ARCHITECTURE

Sector

Sector Size

Address range

Sector Address

Byte Mode Word Mode Byte Mode (x8)

Word Mode (x16) A18 A17 A16 A15 A14 A13 A12

SA0

SA1

SA2

SA3

SA4

SA5

SA6

SA7

SA8

SA9

64Kbytes 32Kwords

00000h-0FFFFh

10000h-1FFFFh

20000h-2FFFFh

30000h-3FFFFh

40000h-4FFFFh

50000h-5FFFFh

60000h-6FFFFh

70000h-7FFFFh

80000h-8FFFFh

90000h-9FFFFh

A0000h-AFFFFh

B0000h-BFFFFh

C0000h-CFFFFh

D0000h-DFFFFh

E0000h-EFFFFh

F0000h-F7FFFh

F8000h-F9FFFh

FA000h-FBFFFh

FC000h-FFFFFh

00000h-07FFFh

08000h-0FFFFh

10000h-17FFFh

18000h-1FFFFh

20000h-27FFFh

28000h-2FFFFh

30000h-37FFFh

38000h-3FFFFh

40000h-47FFFh

48000h-4FFFFh

50000h-57FFFh

58000h-5FFFFh

60000h-67FFFh

68000h-6FFFFh

70000h-77FFFh

78000h-7BFFFh

7C000h-7CFFFh

7D000h-7DFFFh

7E000h-7FFFFh

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

X

0

X

0

X

0

SA10 64Kbytes 32Kwords

SA11 64Kbytes 32Kwords

SA12 64Kbytes 32Kwords

SA13 64Kbytes 32Kwords

SA14 64Kbytes 32Kwords

SA15 32Kbytes 16Kwords

SA16

SA17

8Kbytes

4Kwords

8Kwords

1

0

1

SA18 16Kbytes

1

X

Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.

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MX29LV800C T/B

TABLE 2:MX29LV800CB SECTOR ARCHITECTURE

Sector

Sector Size

Address range

Sector Address

Byte Mode Word Mode Byte Mode (x8)

Word Mode (x16) A18 A17 A16 A15 A14 A13 A12

SA0

SA1

SA2

SA3

SA4

SA5

SA6

SA7

SA8

SA9

16Kbytes

8Kbytes

8Kwords

4Kwords

00000h-03FFFh

04000h-05FFFh

06000h-07FFFh

08000h-0FFFFh

10000h-1FFFFh

20000h-2FFFFh

30000h-3FFFFh

40000h-4FFFFh

50000h-5FFFFh

60000h-6FFFFh

70000h-7FFFFh

80000h-8FFFFh

90000h-9FFFFh

A0000h-AFFFFh

B0000h-BFFFFh

C0000h-CFFFFh

D0000h-DFFFFh

E0000h-EFFFFh

F0000h-FFFFFh

00000h-01FFFh

02000h-02FFFh

03000h-03FFFh

04000h-07FFFh

08000h-0FFFFh

10000h-17FFFh

18000h-1FFFFh

20000h-27FFFh

28000h-2FFFFh

30000h-37FFFh

38000h-3FFFFh

40000h-47FFFh

48000h-4FFFFh

50000h-57FFFh

58000h-5FFFFh

60000h-67FFFh

68000h-6FFFFh

70000h-77FFFh

78000h-7FFFFh

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

X

0

1

32Kbytes 16Kwords

64Kbytes 32Kwords

1

X

SA10 64Kbytes 32Kwords

SA11 64Kbytes 32Kwords

SA12 64Kbytes 32Kwords

SA13 64Kbytes 32Kwords

SA14 64Kbytes 32Kwords

SA15 64Kbytes 32Kwords

SA16 64Kbytes 32Kwords

SA17 64Kbytes 32Kwords

SA18 64Kbytes 32Kwords

Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.

P/N:PM1183

REV. 1.4, APR. 24, 2006

5

MX29LV800C T/B

BLOCK DIAGRAM

WRITE

CE#

OE#

WE#

CONTROL

INPUT

PROGRAM/ERASE

STATE

MACHINE

(WSM)

HIGH VOLTAGE

LOGIC

RESET#

STATE

REGISTER

FLASH

ARRAY

ADDRESS

LATCH

ARRAY

A0-A18

SOURCE

HV

AND

COMMAND

DATA

BUFFER

Y-PASS GATE

DECODER

PGM

SENSE

DATA

COMMAND

DATA LATCH

AMPLIFIER

HV

PROGRAM

DATA LATCH

I/O BUFFER

Q0-Q15/A-1

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REV. 1.4, APR. 24, 2006

6

MX29LV800C T/B

AUTOMATIC PROGRAMMING

dard microprocessor write timings. The device will auto-

matically pre-program and verify the entire array. Then

the device automatically times the erase pulse width,

provides the erase verification, and counts the number of

sequences. A status bit toggling between consecutive

read cycles provides feedback to the user as to the sta-

tus of the erasing operation.

The MX29LV800C T/B is byte programmable using the

Automatic Programming algorithm. The Automatic Pro-

gramming algorithm makes the external system do not

need to have time out sequence nor to verify the data

programmed. The typical chip programming time at room

temperature of the MX29LV800C T/B is less than 10

seconds.

Register contents serve as inputs to an internal state-

machine which controls the erase and programming cir-

cuitry. During write cycles, the command register inter-

nally latches address and data needed for the program-

ming and erase operations. During a system write cycle,

addresses are latched on the falling edge, and data are

latched on the rising edge of WE# or CE#, whichever

happens first.

AUTOMATIC PROGRAMMING ALGORITHM

MXIC's Automatic Programming algorithm requires the

user to only write program set-up commands (including

2 unlock write cycle and A0H) and a program command

(program data and address). The device automatically

times the programming pulse width, provides the pro-

gram verification, and counts the number of sequences.

A status bit similar to DATA# polling and a status bit

toggling between consecutive read cycles, provide feed-

back to the user as to the status of the programming

operation.Refer to write operation status, table 8, for more

information on these status bits.

MXIC's Flash technology combines years of EPROM

experience to produce the highest levels of quality, reli-

ability, and cost effectiveness. The MX29LV800C T/B

electrically erases all bits simultaneously using Fowler-

Nordheim tunneling. The bytes are programmed by us-

ing the EPROM programming mechanism of hot elec-

tron injection.

During a program cycle, the state-machine will control

the program sequences and command register will not

respond to any command set. During a Sector Erase

cycle, the command register will only respond to Erase

Suspend command. After Erase Suspend is completed,

the device stays in read mode. After the state machine

has completed its task, it will allow the command regis-

ter to respond to its full command set.

AUTOMATIC CHIP ERASE

The entire chip is bulk erased using 10 ms erase pulses

according to MXIC's Automatic Chip Erase algorithm.

Typical erasure at room temperature is accomplished in

less than 25 second. The Automatic Erase algorithm

automatically programs the entire array prior to electri-

cal erase. The timing and verification of electrical erase

are controlled internally within the device.

AUTOMATIC SELECT

AUTOMATIC SECTOR ERASE

The auto select mode provides manufacturer and device

identification, and sector protection verification, through

identifier codes output on Q7~Q0. This mode is mainly

adapted for programming equipment on the device to be

programmed with its programming algorithm.When pro-

gramming by high voltage method, automatic select mode

requires VID (11.5V to 12.5V) on address pin A9 and

other address pin A6, A1 and A0 as referring toTable 3.

In addition, to access the automatic select codes in-sys-

tem, the host can issue the automatic select command

through the command register without requiring VID, as

shown in table 5.

The MX29LV800CT/B is sector(s) erasable using MXIC's

Auto Sector Erase algorithm. The Automatic Sector

Erase algorithm automatically programs the specified

sector(s) prior to electrical erase. The timing and verifi-

cation of electrical erase are controlled internally within

the device. An erase operation can erase one sector,

multiple sectors, or the entire device.

AUTOMATIC ERASE ALGORITHM

MXIC's Automatic Erase algorithm requires the user to

write commands to the command register using stan-

To verify whether or not sector being protected, the sec-

tor address must appear on the appropriate highest order

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7

MX29LV800C T/B

address bit (seeTable 1 andTable 2).The rest of address

bits, as shown in table 3, are don't care. Once all neces-

sary bits have been set as required, the programming

equipment may read the corresponding identifier code on

Q7~Q0.

TABLE 3. MX29LV800CT/B AUTO SELECT MODE OPERATION

A18 A11 A9 A8 A6 A5 A1 A0

Description

Mode CE# OE# WE#

|

A7

X

|

A2

X

Q15~Q0

A12 A10

Manufacturer Code

L

H

X

VID

L

C2H

22DAH

Read Device ID

Word

Byte

Word

X

H

Silicon (Top Boot Block)

X

XXDAH

ID

Device ID

X

225BH

(Bottom Boot Block) Byte

X

XX5BH

XX01H

Sector Protection

Verification

L

H

SA

X

VID

X

L

X

H

L

(protected)

XX00H

(unprotected)

NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High

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8

MX29LV800C T/B

The single cycle Query command is valid only when the

device is in the Read mode, including Erase Suspend,

Standby mode, and Read ID mode;however, it is ignored

otherwise.

QUERY COMMAND AND COMMON FLASH

INTERFACE (CFI) MODE

MX29LV800CT/B is capable of operating in the CFI mode.

This mode all the host system to determine the manu-

facturer of the device such as operating parameters and

configuration.Two commands are required in CFI mode.

Query command of CFI mode is placed first, then the

Reset command exits CFI mode.These are described in

Table 4.

The Reset command exits from the CFI mode to the

Read mode, or Erase Suspend mode, or read ID mode.

The command is valid only when the device is in the CFI

mode.

TABLE 4-1. CFI mode: Identification Data Values

(All values in these tables are in hexadecimal)

Description

Address

Data

(ByteMode)

(WordMode)

Query-unique ASCII string "QRY"

20

22

24

26

28

2A

2C

2E

30

32

34

10

11

12

13

14

15

16

17

18

19

1A

0051

0052

0059

0002

0000

0040

0000

Primary vendor command set and control interface ID code

Address for primary algorithm extended query table

Alternate vendor command set and control interface ID code (none)

Address for secondary algorithm extended query table (none)

TABLE 4-2. CFI Mode: System Interface Data Values

(All values in these tables are in hexadecimal)

Description

Address

Data

(ByteMode)

(WordMode)

VCC supply, minimum (2.7V)

36

38

3A

3C

3E

40

42

44

46

48

4A

4C

1B

1C

1D

1E

1F

20

21

22

23

24

25

26

0027

0036

0000

0004

0000

000A

0000

0005

0000

0004

0000

VCC supply, maximum (3.6V)

VPP supply, minimum (none)

VPP supply, maximum (none)

Typical timeout for single word/byte write (2^Nus)

Typical timeout for Minimum size buffer write (2^Nus)

Typical timeout for individual block erase (2^Nms)

Typical timeout for full chip erase (2^Nms)

Maximum timeout for single word/byte write times (2^NX Typ)

Maximum timeout for buffer write times (2^NX Typ)

Maximum timeout for individual block erase times (2^NX Typ)

Maximum timeout for full chip erase times (not supported)

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9

MX29LV800C T/B

TABLE 4-3. CFI Mode: Device Geometry Data Values

(All values in these tables are in hexadecimal)

Description

Address

Data

(ByteMode)

(WordMode)

Device size (2^Nbytes)

4E

50

52

54

56

58

5A

5C

5E

60

62

64

66

68

6A

6C

6E

70

72

74

76

78

27

28

29

2A

2B

2C

2D

2E

2F

30

31

32

33

34

35

36

37

38

39

3A

3B

3C

0014

0002

0000

0004

0000

0040

0000

0001

0000

0020

0000

0080

0000

000E

0000

0001

Flash device interface code (refer to the CFI publication 100)

Maximum number of bytes in multi-byte write (not supported)

Number of erase block regions

Erase block region 1 information (refer to the CFI publication 100)

Erase block region 2 information

Erase block region 3 information

Erase block region 4 information

TABLE 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values

(All values in these tables are in hexadecimal)

Description

Address

Data

(ByteMode)

(WordMode)

Query-unique ASCII string "PRI"

80

82

84

86

88

8A

8C

8E

90

92

94

96

98

40

41

42

43

44

45

46

47

48

49

4A

4B

4C

0050

0052

0049

0031

0030

0000

0002

0001

0004

0000

Major version number, ASCII

Minor version number, ASCII

Address sensitive unlock (0=required, 1= not required)

Erase suspend (2= to read and write)

Sector protect (N= # of sectors/group)

Temporarysectorunprotected(1=supported)

Sectorprotect/unprotectedscheme

SimultaneousR/Woperation(0=notsupported)

Burst mode type (0=not supported)

Page mode type (0=not supported)

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10

MX29LV800C T/B

TABLE 5. MX29LV800CT/B COMMAND DEFINITIONS

First Bus

Bus Cycle

Second Bus Third Bus

Fourth Bus

Cycle

Fifth Bus

Cycle

Sixth Bus

Cycle

Command

Cycle

Cycle Addr Data Addr

Data Addr

Data Addr Data Addr

Data Addr Data

Reset

1

4

XXXH F0H

RA RD

Read

Read Silicon ID Word

Byte

555H AAH 2AAH 55H 555H 90H ADI

AAAH AAH 555H 55H AAAH 90H ADI

DDI

Sector Protect

Verify

Word

555H AAH 2AAH 55H 555H 90H (SA) XX00H

x02H XX01H

Byte

4

AAAH AAH 555H 55H AAAH 90H (SA) 00H

x04H 01H

Program

Word

Byte

Word

Byte

Word

Byte

4

6

1

555H AAH 2AAH 55H 555H A0H PA

AAAH AAH 555H 55H AAAH A0H PA

PD

Chip Erase

Sector Erase

555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H

555H 10H

AAAH 10H

AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H

555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H

SA

30H

AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H

Sector Erase Suspend

Sector Erase Resume

XXXH B0H

XXXH 30H

55H 98

AAH 98

CFI Query

Word

Byte

Note:

1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care.

(Refer to table 3)

DDI = Data of Device identifier : C2H for manufacture code, 22DA/DA(Top), and 225B/5B(Bottom) for device code.

X = X can be VIL or VIH

RA=Address of memory location to be read.

RD=Data to be read at location RA.

2. PA = Address of memory location to be programmed.

PD = Data to be programmed at location PA.

SA = Address of the sector.

3. The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or

555H to Address A10~A-1 in byte mode.

Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA).

Write Sequence may be initiated with A11~A18 in either state.

4. For Sector Protect Verify operation: If read out data is 01H, it means the sector has been protected. If read out data is 00H,

it means the sector is still not being protected.

5. Any number of CFI data read cycle are permitted.

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11

MX29LV800C T/B

COMMAND DEFINITIONS

Device operations are selected by writing specific ad-

dress and data sequences into the command register.

Writing incorrect address and data values or writing them

in the improper sequence will reset the device to the

read mode. Table 5 defines the valid register command

sequences. Note that the Erase Suspend (B0H) and

Erase Resume (30H) commands are valid only while the

Sector Erase operation is in progress.

TABLE 6. MX29LV800CT/B BUS OPERATION

ADDRESS

Q8~Q15

DESCRIPTION

CE# OE# WE#RESET# A18 A10 A9 A8 A6 A5 A1 A0 Q0~Q7 BYTE BYTE

A12 A11

A7

A2

=VIH

=VIL

Read

L

H

AIN

Dout

Dout Q8~Q14

=High Z

Q15=A-1

DIN

Write

L

X

H

X

H

X

L

X

H

X

H

L

AIN

X

DIN(3)

Reset

High Z High Z High Z

DIN DIN High Z

Temporary sector unlock

Output Disable

Standby

X

VID

H

AIN

X

L

High Z High Z High Z

Vcc±

0.3V

L

Vcc±

0.3V

VID

H

X

Sector Protect

H

L

SA

X

L

H

L

X

H

L

DIN

X

Chip Unprotected

Sector Protection Verify

L

H

SA

VID

CODE(5)

NOTES:

1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 5.

2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.

3. Refer to Table 5 for valid Data-In during a write operation.

4. X can be VIL or VIH.

5. Code=00H/XX00H means unprotected.

Code=01H/XX01H means protected.

6. A18~A12=Sector address for sector protect.

7. The sector protect and chip unprotected functions may also be implemented via programming equipment.

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MX29LV800C T/B

REQUIREMENTS FOR READING ARRAY DATA

STANDBY MODE

To read array data from the outputs, the system must

drive the CE# and OE# pins to VIL. CE# is the power

control and selects the device. OE# is the output control

and gates array data to the output pins.WE# should re-

main at VIH.

When using both pins of CE# and RESET#, the device

enter CMOS Standby with both pins held at Vcc ± 0.3V.

If CE# and RESET# are held at VIH, but not within the

range ofVCC ± 0.3V, the device will still be in the standby

mode, but the standby current will be larger.During Auto

Algorithm operation,Vcc active current (Icc2) is required

even CE# = "H" until the operation is completed. The

device can be read with standard access time (tCE) from

either of these standby modes, before it is ready to read

data.

The internal state machine is set for reading array data

upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory con-

tent occurs during the power transition. No command is

necessary in this mode to obtain array data. Standard

microprocessor read cycles that assert valid address on

the device address inputs produce valid data on the de-

vice data outputs.The device remains enabled for read

access until the command register contents are altered.

OUTPUT DISABLE

With the OE# input at a logic high level (VIH), output

from the devices are disabled.This will cause the output

pins to be in a high impedance state.

WRITE COMMANDS/COMMAND SEQUENCES

To program data to the device or erase sectors of memory

, the system must drive WE# and CE# to VIL, and OE#

to VIH.

RESET# OPERATION

The RESET# pin provides a hardware method of reset-

ting the device to reading array data.When the RESET#

pin is driven low for at least a period of tRP, the device

immediately terminates any operation in progress, tri-

states all output pins, and ignores all read/write com-

mands for the duration of the RESET# pulse.The device

also resets the internal state machine to reading array

data. The operation that was interrupted should be

reinitiated once the device is ready to accept another

command sequence, to ensure data integrity

An erase operation can erase one sector, multiple sec-

tors , or the entire device. Table indicates the address

space that each sector occupies. A "sector address"

consists of the address bits required to uniquely select a

sector.The "Writing specific address and data commands

or sequences into the command register initiates device

operations. Table 1 defines the valid register command

sequences.Writing incorrect address and data values or

writing them in the improper sequence resets the device

to reading array data. Section has details on erasing a

sector or the entire chip, or suspending/resuming the erase

operation.

Current is reduced for the duration of the RESET# pulse.

When RESET# is held at VSS±0.3V, the device draws

CMOS standby current (ICC4).If RESET# is held atVIL

but not within VSS±0.3V, the standby current will be

greater.

After the system writes the autoselect command se-

quence, the device enters the autoselect mode.The sys-

tem can then read autoselect codes from the internal

register (which is separate from the memory array) on

Q7-Q0.Standard read cycle timings apply in this mode.

Refer to the Autoselect Mode and Autoselect Command

Sequence section for more information.

The RESET# pin may be tied to system reset circuitry.

A system reset would that also reset the Flash memory,

enabling the system to read the boot-up firmware from

the Flash memory.

If RESET# is asserted during a program or erase opera-

tion, the RY/BY# pin remains a "0" (busy) until the inter-

nal reset operation is complete, which requires a time of

tREADY (during Embedded Algorithms).The system can

thus monitor RY/BY# to determine whether the reset op-

eration is complete. If RESET# is asserted when a pro-

ICC2 in the DC Characteristics table represents the ac-

tive current specification for the write mode. The "AC

Characteristics" section contains timing specification

table and timing diagrams for write operations.

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MX29LV800C T/B

The Automatic Chip Erase does not require the device to

be entirely pre-programmed prior to executing the Auto-

matic Chip Erase. Upon executing the Automatic Chip

Erase, the device will automatically program and verify

the entire memory for an all-zero data pattern. When the

device is automatically verified to contain an all-zero pat-

tern, a self-timed chip erase and verify begin. The erase

and verify operations are completed when the data on Q7

is "1" at which time the device returns to the Read mode.

The system is not required to provide any control or tim-

ing during these operations.

gram or erase operation is completed within a time of

tREADY (not during Embedded Algorithms).The system

can read data tRH after the RESET# pin returns toVIH.

Refer to the AC Characteristics tables for RESET# pa-

rameters and to Figure 22 for the timing diagram.

READ/RESET COMMAND

The read or reset operation is initiated by writing the read/

reset command sequence into the command register.

Microprocessor read cycles retrieve array data. The de-

vice remains enabled for reads until the command regis-

ter contents are altered.

When using the Automatic Chip Erase algorithm, note

that the erase automatically terminates when adequate

erase margin has been achieved for the memory array

(no erase verification command is required).

If program-fail or erase-fail happen, the write of F0H will

reset the device to abort the operation. A valid com-

mand must then be written to place the device in the

desired state.

If the Erase operation was unsuccessful, the data on Q5

is "1" (see Table 8), indicating the erase operation ex-

ceed internal timing limit.

The automatic erase begins on the rising edge of the last

WE# or CE# pulse, whichever happens first in the com-

mand sequence and terminates when the data on Q7 is

"1" at which time the device returns to the Read mode,

or the data on Q6 stops toggling for two consecutive read

cycles at which time the device returns to the Read mode.

SILICON-ID READ COMMAND

Flash memories are intended for use in applications where

the local CPU alters memory contents. As such, manu-

facturer and device codes must be accessible while the

device resides in the target system. PROM program-

mers typically access signature codes by raising A9 to

a high voltage (VID). However, multiplexing high voltage

onto address lines is not generally desired system de-

sign practice.

The MX29LV800C T/B contains a Silicon-ID-Read op-

eration to supple traditional PROM programming meth-

odology. The operation is initiated by writing the read

silicon ID command sequence into the command regis-

ter. Following the command write, a read cycle with

A1=VIL, A0=VIL retrieves the manufacturer code of C2H/

00C2H. A read cycle with A1=VIL, A0=VIH returns the

device code of DAH/22DAH for MX29LV800CT, 5BH/

225BH for MX29LV800CB.

SET-UP AUTOMATIC CHIP/SECTOR ERASE COM-

MANDS

Chip erase is a six-bus cycle operation. There are two

"unlock" write cycles. These are followed by writing the

"set-up" command 80H. Two more "unlock" write cycles

are then followed by the chip erase command 10H or

sector erase command 30H.

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MX29LV800C T/B

TABLE 7. SILICON ID CODE

Pins

A0

A1 Q15~Q8 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Code (Hex)

Manufacture code Word VIL VIL 00H

Byte VIL VIL

Word VIH VIL 22H

for MX29LV800CT Byte VIH VIL

Device code Word VIH VIL 22H

for MX29LV800CB Byte VIH VIL

1

0

1

0

1

0

1

0

1

0

1

0

00C2H

X

C2H

Device code

22DAH

X

DAH

225BH

X

5BH

Sector Protection Word X

Verification Byte X

VIH X

01H (Protected)

00H (Unprotected)

READING ARRAY DATA

RESET COMMAND

The device is automatically set to reading array data

after device power-up.No commands are required to re-

trieve data.The device is also ready to read array data

after completing an Automatic Program or Automatic

Erase algorithm.

Writing the reset command to the device resets the de-

vice to reading array data.Address bits are don't care for

this command.

The reset command may be written between the se-

quence cycles in an erase command sequence before

erasing begins. This resets the device to reading array

data.Once erasure begins, however, the device ignores

reset commands until the operation is complete.

After the device accepts an Erase Suspend command,

the device enters the Erase Suspend mode. The sys-

tem can read array data using the standard read tim-

ings, except that if it reads at an address within erase-

suspended sectors, the device outputs status data. Af-

ter completing a programming operation in the Erase

Suspend mode, the system may once again read array

data with the same exception.See "Erase Suspend/Erase

Resume Commands" for more information on this mode.

The system must issue the reset command to re-en-

able the device for reading array data if Q5 goes high, or

while in the autoselect mode.See the "Reset Command"

section, next.

The reset command may be written between the se-

quence cycles in a program command sequence before

programming begins. This resets the device to reading

array data (also applies to programming in Erase Sus-

pend mode). Once programming begins, however, the

device ignores reset commands until the operation is

complete.

The reset command may be written between the se-

quence cycles in an SILICON ID READ command se-

quence.Once in the SILICON ID READ mode, the reset

command must be written to return to reading array data

(also applies to SILICON ID READ during Erase Sus-

pend).

If Q5 goes high during a program or erase operation, writ-

ing the reset command returns the device to reading ar-

ray data (also applies during Erase Suspend).

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15

MX29LV800C T/B

SECTOR ERASE COMMANDS

Erase operation. When the Erase Suspend Command is

issued during the sector erase operation, the device re-

quires a maximum 20us to suspend the sector erase

operation.However, when the Erase Suspend command

is written during the sector erase time-out, the device

immediately terminates the time-out period and suspends

the erase operation. After this command has been ex-

ecuted, the command register will initiate erase suspend

mode. The state machine will return to read mode auto-

matically after suspend is ready. At this time, state ma-

chine only allows the command register to respond to

Erase Resume, program data to , or read data from any

sector not selected for erasure.

The Automatic Sector Erase does not require the device

to be entirely pre-programmed prior to executing the Au-

tomatic Sector Erase Set-up command and Automatic

Sector Erase command. Upon executing the Automatic

Sector Erase command, the device will automatically pro-

gram and verify the sector(s) memory for an all-zero data

pattern. The system is not required to provide any con-

trol or timing during these operations.

When the sector(s) is automatically verified to contain

an all-zero pattern, a self-timed sector erase and verify

begin. The erase and verify operations are complete

when either the data on Q7 is "1" at which time the de-

vice returns to the Read mode, or the data on Q6 stops

toggling for two consecutive read cycles at which time

the device returns to the Read mode. The system is not

required to provide any control or timing during these

operations.

The system can determine the status of the program

operation using the Q7 or Q6 status bits, just as in the

standard program operation.After an erase-suspend pro-

gram operation is complete, the system can once again

read array data within non-suspended sectors.

When using the Automatic sector Erase algorithm, note

that the erase automatically terminates when adequate

erase margin has been achieved for the memory array

(no erase verification command is required). Sector

erase is a six-bus cycle operation. There are two "un-

lock" write cycles. These are followed by writing the

set-up command 80H. Two more "unlock" write cycles

are then followed by the sector erase command 30H.

The sector address is latched on the falling edge of WE#

or CE#, whichever happens later, while the command

(data) is latched on the rising edge of WE# or CE#,

whichever happens first. Sector addresses selected are

loaded into internal register on the sixth falling edge of

WE# or CE#, whichever happens later. Each succes-

sive sector load cycle started by the falling edge of WE#

or CE#, whichever happens later must begin within 50us

from the rising edge of the preceding WE# or CE#, which-

ever happens first. Otherwise, the loading period ends

and internal auto sector erase cycle starts. (Monitor Q3

to determine if the sector erase timer window is still open,

see section Q3, Sector EraseTimer.) Any command other

than Sector Erase (30H) or Erase Suspend (B0H) during

the time-out period resets the device to read mode.

ERASE RESUME

This command will cause the command register to clear

the suspend state and return back to Sector Erase mode

but only if an Erase Suspend command was previously

issued. Erase Resume will not have any effect in all

other conditions.Another Erase Suspend command can

be written after the chip has resumed erasing.The mini-

mum time from Erase Resume to next Erase Suspend

is 400us.Repeatedly suspending the device more often

may have undetermined effects.

WORD/BYTE PROGRAM COMMAND SEQUENCE

The device programs one byte of data for each program

operation. The command sequence requires four bus

cycles, and is initiated by writing two unlock write cycles,

followed by the program set-up command. The program

address and data are written next, which in turn initiate

the Embedded Program algorithm. The system is not

required to provide further controls or timings. The device

automatically generates the program pulses and verifies

the programmed cell margin. Table 1 shows the address

and data requirements for the byte program command

sequence.

ERASE SUSPEND

When the Embedded Program algorithm is complete, the

device then returns to reading array data and addresses

are no longer latched. The system can determine the

status of the program operation by using Q7, Q6, or RY/

This command only has meaning while the state ma-

chine is executing Automatic Sector Erase operation, and

therefore will only be responded during Automatic Sector

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16

MX29LV800C T/B

BY#.See "Write Operation Status" for information on these

status bits.

is complete, or if the device enters the Erase Suspend

mode, DATA# polling produces a "1" on Q7.This is analo-

gous to the complement/true datum out-put described

for the Automatic Program algorithm: the erase function

changes all the bits in a sector to "1" prior to this, the

device outputs the "complement," or "0". The system

must provide an address within any of the sectors se-

lected for erasure to read valid status information on Q7.

Any commands written to the device during the Em-

bedded Program Algorithm are ignored. Note that a

hardware reset immediately terminates the programming

operation. The Byte Program command sequence should

be reinitiated once the device has reset to reading array

data, to ensure data integrity.

After an erase command sequence is written, if all sec-

tors selected for erasing are protected, DATA# polling on

Q7 is active for approximately 100 us, then the device

returns to reading array data. If not all selected sectors

are protected, the Automatic Erase algorithm erases the

unprotected sectors, and ignores the selected sectors

that are protected.

Programming is allowed in any sequence and across

sector boundaries. A bit cannot be programmed from a

"0" back to a "1". Attempting to do so may halt the

operation and set Q5 to "1" , or cause the DATA# polling

algorithm to indicate the operation was successful.

However, a succeeding read will show that the data is

still "0". Only erase operations can convert a "0" to a

"1".

When the system detects Q7 has changed from the

complement to true data, it can read valid data at Q7-Q0

on the following read cycles. This is because Q7 may

change asynchronously with Q0-Q6 while Output Enable

(OE#) is asserted low.

WRITE OPERATION STATUS

The device provides several bits to determine the sta-

tus of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/

BY#. Table 10 and the following subsections describe

the functions of these bits. Q7, RY/BY#, and Q6 each

offer a method for determining whether a program or erase

operation is complete or in progress.These three bits are

discussed first.

RY/BY# :Ready/Busy

The RY/BY# is a dedicated, open-drain output pin that

indicates whether an Automatic Erase/Program algorithm

is in progress or complete. The RY/BY# status is valid

after the rising edge of the final WE# or CE#, whichever

happens first, in the command sequence.Since RY/BY#

is an open-drain output, several RY/BY# pins can be tied

together in parallel with a pull-up resistor toVCC.

Q7:Data# Polling

The DATA# polling bit, Q7, indicates to the host system

whether an Automatic Algorithm is in progress or com-

pleted, or whether the device is in Erase Suspend.DATA#

polling is valid after the rising edge of the finalWE# pulse

in the program or erase command sequence.

If the output is low (Busy), the device is actively erasing

or programming.(This includes programming in the Erase

Suspend mode.) If the output is high (Ready), the device

is ready to read array data (including during the Erase

Suspend mode), or is in the standby mode.

During the Automatic Program algorithm, the device out-

puts on Q7 the complement of the datum programmed to

Q7.This Q7 status also applies to programming during

Erase Suspend.When the Automatic Program algorithm

is complete, the device outputs the datum programmed

to Q7.The system must provide the program address to

read valid status information on Q7.If a program address

falls within a protected sector, DATA# polling on Q7 is

active for approximately 1 us, then the device returns to

reading array data.

Table 8 shows the outputs for RY/BY# during write op-

eration.

Q6:Toggle BIT I

Toggle Bit I on Q6 indicates whether an Automatic Pro-

gram or Erase algorithm is in progress or complete, or

whether the device has entered the Erase Suspend mode.

Toggle Bit I may be read at any address, and is valid

after the rising edge of the final WE# or CE#, whichever

During the Automatic Erase algorithm, DATA# polling pro-

duces a "0" on Q7.When the Automatic Erase algorithm

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17

MX29LV800C T/B

happens first, in the command sequence (prior to the

program or erase operation), and during the sector time-

out.

is actively erasing or is erase-suspended. Q6, by com-

parison, indicates whether the device is actively eras-

ing, or is in Erase Suspend, but cannot distinguish which

sectors are selected for erasure. Thus, both status bits

are required for sectors and mode information. Refer to

Table 8 to compare outputs for Q2 and Q6.

During an Automatic Program or Erase algorithm opera-

tion, successive read cycles to any address cause Q6

to toggle. The system may use either OE# or CE# to

control the read cycles.When the operation is complete,

Q6 stops toggling.

ReadingToggle Bits Q6/ Q2

After an erase command sequence is written, if all sec-

tors selected for erasing are protected, Q6 toggles and

returns to reading array data. If not all selected sectors

are protected, the Automatic Erase algorithm erases the

unprotected sectors, and ignores the selected sectors

that are protected.

Whenever the system initially begins reading toggle bit

status, it must read Q7-Q0 at least twice in a row to

determine whether a toggle bit is toggling. Typically, the

system would note and store the value of the toggle bit

after the first read. After the second read, the system

would compare the new value of the toggle bit with the

first. If the toggle bit is not toggling, the device has com-

pleted the program or erase operation. The system can

read array data on Q7-Q0 on the following read cycle.

The system can use Q6 and Q2 together to determine

whether a sector is actively erasing or is erase sus-

pended.When the device is actively erasing (that is, the

Automatic Erase algorithm is in progress), Q6 toggling.

When the device enters the Erase Suspend mode, Q6

stops toggling. However, the system must also use Q2

to determine which sectors are erasing or erase-sus-

pended. Alternatively, the system can use Q7.

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the sys-

tem also should note whether the value of Q5 is high

(see the section on Q5). If it is, the system should then

determine again whether the toggle bit is toggling, since

the toggle bit may have stopped toggling just as Q5 went

high. If the toggle bit is no longer toggling, the device

has successfully completed the program or erase opera-

tion. If it is still toggling, the device did not complete the

operation successfully, and the system must write the

reset command to return to reading array data.

If a program address falls within a protected sector, Q6

toggles for approximately 2 us after the program com-

mand sequence is written, then returns to reading array

data.

Q6 also toggles during the erase-suspend-program mode,

and stops toggling once the Automatic Program algorithm

is complete.

The remaining scenario is that system initially determines

that the toggle bit is toggling and Q5 has not gone high.

The system may continue to monitor the toggle bit and

Q5 through successive read cycles, determining the sta-

tus as described in the previous paragraph. Alternatively,

it may choose to perform other system tasks. In this

case, the system must start at the beginning of the al-

gorithm when it returns to determine the status of the

operation.

Table 8 shows the outputs for Toggle Bit I on Q6.

Q2:Toggle Bit II

The "Toggle Bit II" on Q2, when used with Q6, indicates

whether a particular sector is actively erasing (that is,

the Automatic Erase algorithm is in process), or whether

that sector is erase-suspended. Toggle Bit II is valid

after the rising edge of the final WE# or CE#, whichever

happens first, in the command sequence.

Q5

ExceededTiming Limits

Q5 will indicate if the program or erase time has exceeded

the specified limits (internal pulse count). Under these

conditions Q5 will produce a "1". This time-out condition

indicates that the program or erase cycle was not suc-

cessfully completed. Data# Polling and Toggle Bit are

Q2 toggles when the system reads at addresses within

those sectors that have been selected for erasure. (The

system may use either OE# or CE# to control the read

cycles.) But Q2 cannot distinguish whether the sector

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18

MX29LV800C T/B

the only operating functions of the device under this con-

dition.

operation, it specifies that the entire chip is bad or com-

bination of sectors are bad.

If this time-out condition occurs during sector erase op-

eration, it specifies that a particular sector is bad and it

may not be reused. However, other sectors are still func-

tional and may be used for the program or erase opera-

tion. The device must be reset to use other sectors.

Write the Reset command sequence to the device, and

then execute program or erase command sequence. This

allows the system to continue to use the other active

sectors in the device.

If this time-out condition occurs during the byte program-

ming operation, it specifies that the entire sector con-

taining that byte is bad and this sector may not be re-

used, (other sectors are still functional and can be re-

used).

The time-out condition will not appear if a user tries to

program a non blank location without erasing.Please note

that this is not a device failure condition since the device

was incorrectly used.

If this time-out condition occurs during the chip erase

TABLE 8. WRITE OPERATION STATUS

Status

Q7

Q6

Q5

Q3

Q2 RY/BY#

(Note1)

(Note2)

Byte Program in Auto Program Algorithm

Auto Erase Algorithm

Q7# Toggle

0

N/A

1

No

0

Toggle

0

1

Toggle

0

Toggle

0

1

Erase Suspend Read

(Erase Suspended Sector)

No

Toggle

N/A Toggle

In Progress

Erase Suspended Mode

Erase Suspend Read

Data

Data Data Data Data

1

0

(Non-Erase Suspended Sector)

Erase Suspend Program

Q7# Toggle

0

1

N/A N/A

Byte Program in Auto Program Algorithm

N/A

1

No

Toggle

Exceeded

Time Limits Auto Erase Algorithm

0

Toggle

1

Toggle

0

Erase Suspend Program

Q7# Toggle

N/A N/A

Note:

1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.

See "Q5:Exceeded Timing Limits " for more information.

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MX29LV800C T/B

WRITE PULSE "GLITCH" PROTECTION

Q3

Sector EraseTimer

Noise pulses of less than 5ns(typical) on CE# or WE#

will not initiate a write cycle.

After the completion of the initial sector erase command

sequence, the sector erase time-out will begin. Q3 will

remain low until the time-out is complete. DATA# polling

andToggle Bit are valid after the initial sector erase com-

mand sequence.

LOGICAL INHIBIT

Writing is inhibited by holding any one of OE# = VIL,

CE# = VIH or WE# = VIH. To initiate a write cycle CE#

and WE# must be a logical zero while OE# is a logical

one.

If DATA# polling or the Toggle Bit indicates the device

has been written with a valid erase command, Q3 may

be used to determine if the sector erase timer window is

still open. If Q3 is high ("1") the internally controlled

erase cycle has begun; attempts to write subsequent

commands to the device will be ignored until the erase

operation is completed as indicated by DATA# polling or

Toggle Bit. If Q3 is low ("0"), the device will accept

additional sector erase commands. To insure the com-

mand has been accepted, the system software should

check the status of Q3 prior to and following each sub-

sequent sector erase command. If Q3 were high on the

second status check, the command may not have been

accepted.

POWER SUPPLY DECOUPLING

In order to reduce power switching effect, each device

should have a 0.1uF ceramic capacitor connected be-

tween itsVCC and GND.

POWER-UP SEQUENCE

The MX29LV800CT/B powers up in the Read only mode.

In addition, the memory contents may only be altered

after successful completion of the predefined command

sequences.

DATA PROTECTION

The MX29LV800C T/B is designed to offer protection

against accidental erasure or programming caused by

spurious system level signals that may exist during power

transition. During power up the device automatically re-

sets the state machine in the Read mode. In addition,

with its control register architecture, alteration of the

memory contents only occurs after successful comple-

tion of specific command sequences. The device also

incorporates several features to prevent inadvertent write

cycles resulting fromVCC power-up and power-down tran-

sition or system noise.

TEMPORARY SECTOR UNPROTECTED

This feature allows temporary unprotected of previously

protected sector to change data in-system.TheTempo-

rary Sector Unprotected mode is activated by setting

the RESET# pin toVID(11.5V-12.5V). During this mode,

formerly protected sectors can be programmed or erased

as un-protected sector. Once VID is remove from the

RESET# pin, all the previously protected sectors are

protected again.

LOWVCCWRITE INHIBIT

SECTOR PROTECTION

When VCC is less than VLKO the device does not ac-

cept any write cycles. This protects data during VCC

power-up and power-down.The command register and

all internal program/erase circuits are disabled, and the

device resets. Subsequent writes are ignored untilVCC

is greater thanVLKO. The system must provide the proper

signals to the control pins to prevent unintentional write

whenVCC is greater thanVLKO.

The MX29LV800CT/B features hardware sector protec-

tion. This feature will disable both program and erase

operations for these sectors protected. To activate this

mode, the programming equipment must force VID on

address pin A9 and OE# (suggest VID = 12V). Pro-

gramming of the protection circuitry begins on the falling

edge of the WE# pulse and is terminated on the rising

edge. Please refer to sector protect algorithm and wave-

P/N:PM1183

REV. 1.4, APR. 24, 2006

20

MX29LV800C T/B

form.

To verify programming of the protection circuitry, the pro-

gramming equipment must forceVID on address pin A9

( with CE# and OE# at VIL and WE# at VIH). When

A1=VIH, A0=VIL, A6=VIL, it will produce a logical "1"

code at device output Q0 for a protected sector. Other-

wise the device will produce 00H for the unprotected

sector. In this mode, the addresses, except for A1, are

don't care. Address locations with A1 =VIL are reserved

to read manufacturer and device codes. (Read Silicon

ID)

It is also possible to determine if the sector is protected

in the system by writing a Read Silicon ID command.

Performing a read operation with A1=VIH, it will produce

a logical "1" at Q0 for the protected sector.

CHIP UNPROTECTED

The MX29LV800CT/B also features the chip unprotected

mode, so that all sectors are unprotected after chip un-

protected is completed to incorporate any changes in the

code. It is recommended to protect all sectors before

activating chip unprotected mode.

To activate this mode, the programming equipment must

force VID on control pin OE# and address pin A9. The

CE# pins must be set at VIL. Pins A6 must be set to

VIH. Refer to chip unprotected algorithm and waveform

for the chip unprotected algorithm. The unprotection

mechanism begins on the falling edge of the WE# pulse

and is terminated on the rising edge.

It is also possible to determine if the chip is unprotected

in the system by writing the Read Silicon ID command.

Performing a read operation with A1=VIH, it will produce

00H at data outputs (Q0-Q7) for an unprotected sector.

It is noted that all sectors are unprotected after the chip

unprotected algorithm is completed.

P/N:PM1183

REV. 1.4, APR. 24, 2006

21

MX29LV800C T/B

ABSOLUTE MAXIMUM RATINGS

OPERATING RATINGS

StorageTemperature

Plastic Packages . . . . . . . . . . . . . ..... -65^oC to +150^oC

Commercial (C) Devices

Ambient Temperature (T^A). . . . . . . . . . . . 0°C to +70°C

AmbientTemperature

with Power Applied. . . . . . . . . . . . . .... -65^oC to +125^oC

Voltage with Respect to Ground

Industrial (I) Devices

Ambient Temperature (T^A). . . . . . . . . . -40°C to +85°C

VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V

A9, OE#, and

V^CCSupply Voltages

V^CCfor regulated voltage range. . . . . . +3.0 V to 3.6 V

V^CCfor full voltage range. . . . . . . . . . . +2.7 V to 3.6 V

RESET# (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V

All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V

Output Short Circuit Current (Note 3) . . . . . . 200 mA

Operating ranges define those limits between which the

functionality of the device is guaranteed.

Notes:

1. Minimum DC voltage on input or I/O pins is -0.5 V.

During voltage transitions, input or I/O pins may over-

shoot VSS to -2.0 V for periods of up to 20 ns. See

Figure 6. Maximum DC voltage on input or I/O pins is

VCC +0.5 V. During voltage transitions, input or I/O

pins may overshoot to VCC +2.0 V for periods up to

20 ns.

2. Minimum DC input voltage on pins A9, OE#, and

RESET# is -0.5V.During voltage transitions, A9, OE#,

and RESET# may overshoot VSS to -2.0 V for peri-

ods of up to 20 ns. See Figure 6. Maximum DC input

voltage on pin A9 is +12.5 V which may overshoot to

14.0 V for periods up to 20 ns.

3.No more than one output may be shorted to ground at

a time. Duration of the short circuit should not be

greater than one second.

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device.

This is a stress rating only; functional operation of the

device at these or any other conditions above those in-

dicated in the operational sections of this data sheet is

not implied. Exposure of the device to absolute maxi-

mum rating conditions for extended periods may affect

device reliability.

P/N:PM1183

REV. 1.4, APR. 24, 2006

22

MX29LV800C T/B

CAPACITANCE TA = 25^oC, f = 1.0 MHz

SYMBOL

CIN1

PARAMETER

MIN.

TYP

MAX.

8

UNIT

pF

CONDITIONS

VIN = 0V

Input Capacitance

Control Pin Capacitance

Output Capacitance

CIN2

12

pF

VIN = 0V

COUT

12

pF

VOUT = 0V

TABLE 9. DC CHARACTERISTICS TA = -40^oC to 85^oC,VCC = 2.7V~3.6V

Symbol PARAMETER

MIN.

TYP

MAX.

± 1

35

± 1

12

4

UNIT

uA

CONDITIONS

ILI

Input Leakage Current

VIN = VSS to VCC

ILIT

ILO

ICC1

A9 Input Leakage Current

Output Leakage Current

VCC Active Read Current

uA

VCC=VCC max; A9=12.5V

VOUT = VSS to VCC, VCC=VCC max

CE#=VIL, OE#=VIH @5MHz

uA

7

2

mA

uA

(Byte Mode)

@1MHz

7

12

4

CE#=VIL, OE#=VIH @5MHz

2

(Word Mode)

@1MHz

ICC2

ICC3

ICC4

VCC Active write Current

VCC Standby Current

During Reset

15

0.2

30

5

CE#=VIL, OE#=VIH

CE#; RESET#=VCC ± 0.3V

RESET#=VSS ± 0.3V

5

uA

ICC5

VIL

Automatic sleep mode

Input Low Voltage(Note 1)

Input High Voltage

Voltage for Automatic

Select and Temporary

Sector Unprotected

Output Low Voltage

Output High Voltage(TTL)

Output High Voltage

(CMOS)

0.2

5

uA

V

VIH=VCC ± 0.3V; VIL=VSS ± 0.3V

-0.5

0.8

VIH

VID

0.7xVCC

VCC+ 0.3

V

11.5

12.5

0.45

V

VCC=3.3V

VOL

IOL = 4.0mA, VCC= VCC min

IOH = -2mA, VCC=VCC min

IOH = -100uA, VCC min

VOH1

VOH2

0.85xVCC

VCC-0.4

VLKO

Low VCC Lock-Out Voltage

(Note 4)

1.4

2.1

V

NOTES:

1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.

VIL min. = -2.0V for pulse width is equal to or less than 20 ns.

2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns

If VIH is over the specified maximum value, read operation cannot be guaranteed.

3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.

4. Not 100% tested.

P/N:PM1183

REV. 1.4, APR. 24, 2006

23

MX29LV800C T/B

AC CHARACTERISTICS TA = -40^oC to 85^oC,VCC = 2.7V~3.6V (RestrictedVCC=3.0V~3.6V for 45R/55R)

TABLE 10. READ OPERATIONS

Parameter

Std.

Speed Options

Description

Test Setup

45R 55R 70 90 Unit

tRC

Read CycleTime (Note 1)

Address to Output Delay

CE# to Output Delay

OE# to Output Delay

OE# High to Output Float (Note1)

Output Enable Read

MIN. 45

CE#=OE#=VIL MAX. 45

55

30

25

0

70 90

30 35

25 30

ns

tACC

tCE

OE#=VIL

CE#=VIL

MAX. 45

MAX. 30

MAX. 25

tOE

tDF

tOEH

MIN.

MIN. 10

CE#=OE#=VIL MIN.

0

HoldTime

Toggle and Data# Polling

10

0

10 10

tOH

Address to Output hold

0

TEST CONDITIONS:

• Input pulse levels: 0V/3.0V.

• Input rise and fall times is equal to or less than 5ns.

• Outputload:1TTLgate+100pF(Includingscopeandjig),for29LV800CT/B-90.1TTL gate+30pF(Includingscope

and jig) for 29LV800C T/B-70

• Reference levels for measuring timing: 1.5V.

NOTES:

1. Not 100% tested.

2. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven.

P/N:PM1183

REV. 1.4, APR. 24, 2006

24

MX29LV800C T/B

SWITCHINGTEST CIRCUITS

DEVICE UNDER

2.7K ohm

+3.3V

TEST

CL

6.2K ohm

DIODES=IN3064

OR EQUIVALENT

CL= 100pF Including jig capacitance

(30pF for MX29LV800CT/CB-70)

SWITCHINGTESTWAVEFORMS

3.0V

TEST POINTS

0V

INPUT

OUTPUT

AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".

Input pulse rise and fall times are < 5ns.

P/N:PM1183

REV. 1.4, APR. 24, 2006

25

MX29LV800C T/B

FIGURE 1.READTIMINGWAVEFORMS

tRC

VIH

ADD Valid

Addresses

VIL

tACC

tCE

VIH

CE#

VIL

VIH

WE#

VIL

tOE

tDF

tOEH

VIH

OE#

VIL

tACC

tOH

HIGH Z

VOH

VOL

Outputs

DATA Valid

VIH

VIL

RESET#

P/N:PM1183

REV. 1.4, APR. 24, 2006

26

MX29LV800C T/B

AC CHARACTERISTICS TA = -40^oC to 85^oC,VCC = 2.7V~3.6V (RestrictedVCC=3.0V~3.6V for 45R/55R)

TABLE 11. Erase/Program Operations

Parameter

Std.

Speed Options

45R 55R 70

Description

90

0

Unit

ns

tWC

Write Cycle Time (Note 1)

Address Setup Time

MIN.

45

0

55

0

70

0

tAS

ns

tAH

Address Hold Time

45

35

0

45

35

0

45

35

0

45

0

ns

tDS

Data Setup Time

ns

tDH

Data Hold Time

ns

tOES

tGHWL

Output Enable Setup Time

Read Recovery Time Before Write

(OE# High to WE# Low)

CE# Setup Time

0

ns

0

ns

tCS

MIN.

TYP.

MIN.

MAX.

MIN.

TYP.

MIN.

TYP.

MAX.

0

ns

us

sec

us

ns

us

ns

ms

us

tCH

CE# Hold Time

tWP

Write Pulse Width

35

30

9

35

30

9

35

30

9

35

30

9

tWPH

tWHWH1

Write Pulse Width High

ProgrammingOperation(Note2)

(Byte/Wordprogramtime)

Sector Erase Operation (Note 2)

VCC Setup Time (Note 1)

Recovery Time from RY/BY#

Program/Erase Valid to RY/BY# Delay

Write Pulse Width for Sector Protect

(A9, OE# Control)

BYTE

WORD

11

0.7

50

0

11

tWHWH2

tVCS

0.7 0.7 0.7

50

0

50

0

50

0

tRB

tBUSY

tWPP1

90

100

10

100

12

50

90

100 100 100

10 10 10

100 100 100

tWPP2

Write Pulse Width for Chip Unprotected

(A9, OE# Control)

12

50

12

50

12

50

tBAL

Sector Address Load Time

NOTES:

1. Not 100% tested.

2. See the "Erase and Programming Performance" section for more information.

P/N:PM1183

REV. 1.4, APR. 24, 2006

27

MX29LV800C T/B

AC CHARACTERISTICS TA = -40^oC to 85^oC,VCC = 2.7V~3.6V (RestrictedVCC=3.0V~3.6V for 45R/55R)

TABLE 12. Alternate CE# Controlled Erase/Program Operations

Parameter

Std.

Speed Options

45R 55R 70

Description

90

0

Unit

ns

us

sec

tWC

Write CycleTime (Note 1)

CommandWrite CycleTime

Address SetupTime

Address HoldTime

Data SetupTime

MIN.

TYP.

45

0

55

0

70

0

tCWC

tAS

tAH

45

35

0

45

35

0

45

35

0

45

0

tDS

tDH

Data HoldTime

tOES

tGHEL

tWS

Output Enable SetupTime

Read RecoveryTime BeforeWrite

WE# SetupTime

0

tWH

WE# HoldTime

0

tCP

CE# PulseWidth

35

30

9

35

30

9

35

30

9

35

30

9

tCPH

tWHWH1

CE# Pulse Width High

Programming

Byte

Word

Operation(note2)

11

0.7

11

tWHWH2

Sector Erase Operation (note2)

0.7 0.7 0.7

NOTE:

1. Not 100% tested.

2. See the "Erase and Programming Performance" section for more information.

P/N:PM1183

REV. 1.4, APR. 24, 2006

28

MX29LV800C T/B

FIGURE 2. COMMANDWRITETIMINGWAVEFORM

VCC

3V

VIH

Addresses

ADD Valid

VIL

tAH

tAS

VIH

VIL

WE#

CE#

tWPH

tCWC

tOES

tWP

VIH

VIL

tCS

tCH

tDH

VIH

VIL

OE#

Data

tDS

VIH

VIL

DIN

P/N:PM1183

REV. 1.4, APR. 24, 2006

29

MX29LV800C T/B

AUTOMATIC PROGRAMMING TIMING WAVEFORM

ing after automatic programming starts. Device outputs

DATA# during programming and DATA# after program-

ming on Q7. (Q6 is for toggle bit; see toggle bit, DATA#

polling, timing waveform)

One byte data is programmed. Verify in fast algorithm

and additional verification by external control are not re-

quired because these operations are executed automati-

cally by internal control circuit. Programming comple-

tion can be verified by DATA# polling and toggle bit check-

FIGURE 3.AUTOMATIC PROGRAMMINGTIMINGWAVEFORM

Program Command Sequence(last two cycle)

Read Status Data (last two cycle)

tWC

tAS

PA

555h

PA

Address

CE#

tAH

tCH

tGHWL

OE#

WE#

tWHWH1

tWP

tCS

tWPH

tDS tDH

Status

A0h

PD

DOUT

Data

tBUSY

tRB

RY/BY#

tVCS

VCC

NOTES:

1.PA=Program Address, PD=Program Data, DOUT is the true data the program address

P/N:PM1183

REV. 1.4, APR. 24, 2006

30

MX29LV800C T/B

FIGURE 4.AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data A0H Address 555H

Write Program Data/Address

Data Poll

Increment

Address

from system

No

Verify Word Ok ?

YES

Last Address ?

YES

Auto Program Completed

P/N:PM1183

REV. 1.4, APR. 24, 2006

31

MX29LV800C T/B

FIGURE 5. CE# CONTROLLED PROGRAMTIMINGWAVEFORM

PA for program

555 for program

2AA for erase

SA for sector erase

555 for chip erase

Data Polling

Address

PA

tWC

tWH

tAS

tAH

WE#

OE#

tGHEL

tCP

tWHWH1 or 2

CE#

Data

tWS

tDS

tCPH

tBUSY

tDH

DOUT

DQ7

PD for program

30 for sector erase

10 for chip erase

A0 for program

55 for erase

tRH

RESET#

RY/BY#

NOTES:

1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device.

2.Figure indicates the last two bus cycles of the command sequence.

P/N:PM1183

REV. 1.4, APR. 24, 2006

32

MX29LV800C T/B

AUTOMATIC CHIP ERASE TIMING WAVEFORM

matic erase starts. Device outputs 0 during erasure

and 1 after erasure on Q7.(Q6 is for toggle bit;see toggle

bit, DATA# polling, timing waveform)

All data in chip are erased. External erase verification is

not required because data is verified automatically by

internal control circuit. Erasure completion can be veri-

fied by DATA# polling and toggle bit checking after auto-

FIGURE 6. AUTOMATIC CHIP ERASETIMINGWAVEFORM

Erase Command Sequence(last two cycle)

Read Status Data

tWC

tAS

VA

2AAh

555h

Address

CE#

tAH

tCH

tGHWL

OE#

WE#

tWHWH2

tWP

tCS

tWPH

tDS tDH

In

Progress

55h

10h

Complete

Data

tBUSY

tRB

RY/BY#

tVCS

VCC

NOTES:

SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").

P/N:PM1183

REV. 1.4, APR. 24, 2006

33

MX29LV800C T/B

FIGURE 7.AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 80H Address 555H

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 10H Address 555H

Data Pall from System

NO

Data=FFh ?

YES

Auto Chip Erase Completed

P/N:PM1183

REV. 1.4, APR. 24, 2006

34

MX29LV800C T/B

AUTOMATIC SECTOR ERASE TIMING WAVEFORM

Sector indicated by A12 to A18 are erased. External

erase verify is not required because data are verified

automatically by internal control circuit. Erasure comple-

tion can be verified by DATA# polling and toggle bit check-

ing after automatic erase starts. Device outputs 0 dur-

ing erasure and 1 after erasure on Q7. (Q6 is for toggle

bit; see toggle bit, DATA# polling, timing waveform)

FIGURE 8.AUTOMATIC SECTOR ERASETIMINGWAVEFORM

Erase Command Sequence(last two cycle)

Read Status Data

VA

tWC

tAS

Sector

VA

2AAh

Address

CE#

Address 0

Address 1

Address n

tAH

tCH

tGHWL

OE#

WE#

tWHWH2

tBAL

tWP

tCS

tWPH

tDS tDH

In

Progress

55h

30h

Complete

Data

tBUSY

tRB

RY/BY#

tVCS

VCC

NOTES:

SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").

P/N:PM1183

REV. 1.4, APR. 24, 2006

35

MX29LV800C T/B

FIGURE 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 80H Address 555H

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 30H Sector Address

NO

Last Sector

to Erase

YES

Data Poll from System

NO

Data=FFh

YES

Auto Sector Erase Completed

P/N:PM1183

REV. 1.4, APR. 24, 2006

36

MX29LV800C T/B

FIGURE 10. ERASE SUSPEND/ERASE RESUME FLOWCHART

START

Write Data B0H

ERASE SUSPEND

NO

Toggle Bit checking Q6

not toggled

YES

Read Array or

Program

Reading or

NO

Programming End

YES

Write Data 30H

Delay at least

400us (note)

ERASE RESUME

Continue Erase

Another

NO

Erase Suspend ?

YES

Note:Repeatedly suspending the device more often may have undetermined effects.

P/N:PM1183

REV. 1.4, APR. 24, 2006

37

MX29LV800C T/B

FIGURE 11. IN-SYSTEM SECTOR PROTECT/UNPROTECTEDTIMINGWAVEFORM (RESET# Control)

VID

VIH

RESET#

SA, A6

A1, A0

Valid*

Sector Protect or Chip Unprotect

Verify

40h

Status

Data

60h

Sector Protect =150us

Chip Unprotect =15ms

1us

CE#

WE#

OE#

Note: When sector protect, A6=0, A1=1, A0=0. When chip unprotect, A6=1, A1=1, A0=0.

P/N:PM1183

REV. 1.4, APR. 24, 2006

38

MX29LV800C T/B

FIGURE 12. SECTOR PROTECTTIMINGWAVEFORM (A9, OE# Control)

A1

A6

12V

3V

A9

tVLHT

Verify

12V

3V

OE#

tVLHT

tWPP 1

WE#

CE#

tOESP

Data

01H

F0H

tOE

Sector Address

A18-A12

P/N:PM1183

REV. 1.4, APR. 24, 2006

39

MX29LV800C T/B

FIGURE 13.SECTOR PROTECTION ALGORITHM (A9, OE# Control)

START

Set Up Sector Addr

PLSCNT=1

OE#=VID, A9=VID, CE#=VIL

A6=VIL

Activate WE# Pulse

Time Out 150us

Set WE#=VIH, CE#=OE#=VIL

A9 should remain VID

.

Read from Sector

Addr=SA, A1=1

No

Data=01H?

PLSCNT=32?

Yes

Device Failed

Yes

Protect Another

Sector?

Remove VID from A9

Write Reset Command

Sector Protection

Complete

P/N:PM1183

REV. 1.4, APR. 24, 2006

40

MX29LV800C T/B

FIGURE 14. IN-SYSTEM SECTOR PROTECTION ALGORITHMWITH RESET#=VID

START

PLSCNT=1

RESET#=VID

Wait 1us

No

Temporary Sector

Unprotect Mode

First Write

Cycle=60H

Yes

Set up sector address

Write 60H to sector address

with A6=0, A1=1, A0=0

Wait 150us

Verify sector protect :

write 40H with A6=0,

A1=1, A0=0

Increment PLSCNT

Reset PLSCNT=1

Read from sector address

No

PLSCNT=25?

Data=01H ?

Yes

Device failed

Yes

Protect another

sector?

No

Remove VID from RESET#

Write reset command

Sector protect complete

P/N:PM1183

REV. 1.4, APR. 24, 2006

41

MX29LV800C T/B

FIGURE 15. IN-SYSTEM CHIP UNPROTECTION ALGORITHM WITH RESET#=VID

START

PLSCNT=1

RESET#=VID

Wait 1us

No

Temporary Sector

Unprotect Mode

First Write

Cycle=60H ?

Yes

All sector

Protect all sectors

protected?

Yes

Set up first sector address

Chip unprotect :

write 60H with

A6=1, A1=1, A0=0

Wait 50ms

Verify chip unprotect

write 40H to sector address

with A6=1, A1=1, A0=0

Increment PLSCNT

Read from sector address

with A6=1, A1=1, A0=0

No

Set up next sector address

PLSCNT=1000?

Data=00H ?

Yes

Device failed

Yes

Last sector

verified?

No

Remove VID from RESET#

Write reset command

Chip unprotect complete

P/N:PM1183

REV. 1.4, APR. 24, 2006

42

MX29LV800C T/B

FIGURE 16.TIMINGWAVEFORM FOR CHIP UNPROTECTION (A9, OE# Control)

A1

12V

Vcc 3V

A9

A6

tVLHT

Verify

12V

Vcc 3V

OE#

tVLHT

time out 50ms

tWPP 2

WE#

CE#

tOESP

Data

00H

F0H

tOE

A18-A12

Sector Address

Notes: tVLHT (Voltage transition time)=4us min.

tWPP1 (Write pulse width for sector protect)=100ns min, 10us(Typ.)

tWPP2 (Write pulse width for chip unprotected)=100ns min, 12ms(Typ.)

tOESP (OE# setup time to WE# active)=4us min.

P/N:PM1183

REV. 1.4, APR. 24, 2006

43

MX29LV800C T/B

FIGURE 17. CHIP UNPROTECTION ALGORITHM (A9, OE# Control)

START

Protect All Sectors

PLSCNT=1

Set OE#=A9=VID

CE#=VIL,A6=1

Activate WE# Pulse

Time Out 50ms

Increment

PLSCNT

Set OE#=CE#=VIL

A9=VID,A1=1

Set Up First Sector Addr

Read Data from Device

No

Data=00H?

Yes

PLSCNT=1000?

Increment

Sector Addr

Yes

Device Failed

No

All sectors have

been verified?

Yes

Remove VID from A9

Write Reset Command

Chip Unprotect

Complete

* It is recommended before unprotect whole chip, all sectors should be protected in advance.

P/N:PM1183

REV. 1.4, APR. 24, 2006

44

MX29LV800C T/B

WRITE OPERATION STATUS

FIGURE 18. DATA# POLLING ALGORITHM

Start

Read Q7~Q0

Add.=VA(1)

Yes

Q7 = Data ?

No

Q5 = 1 ?

Yes

Read Q7~Q0

Add.=VA

Yes

(2)

Q7 = Data ?

No

FAIL

Pass

NOTE : 1.VA=Valid address for programming

2.Q7 should be re-checked even Q5="1" because Q7 may change

simultaneously with Q5.

P/N:PM1183

REV. 1.4, APR. 24, 2006

45

MX29LV800C T/B

FIGURE 19.TOGGLE BIT ALGORITHM

Start

Read Q7-Q0

(Note 1)

NO

Toggle Bit Q6 =

Toggle ?

YES

NO

Q5= 1?

YES

Read Q7~Q0 Twice

(Note 1,2)

NO

Toggle bit Q6=

Toggle?

YES

Program/Erase Operation

Not Complete,Write

Reset Command

Program/Erase

operation Complete

Note:1.Read toggle bit twice to determine whether or not it is toggling.

2. Recheck toggle bit because it may stop toggling as Q5 change to "1".

P/N:PM1183

REV. 1.4, APR. 24, 2006

46

MX29LV800C T/B

FIGURE 20. DATA# PollingTimings (During Automatic Algorithms)

tRC

VA

Address

CE#

tACC

tCE

tCH

tOE

OE#

WE#

tOEH

tDF

tOH

High Z

Complement

Status Data

Complement

Status Data

True

Valid Data

DQ7

Q0-Q6

tBUSY

RY/BY#

NOTES:

1. VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.

2. CE# must be toggled when DATA# polling.

P/N:PM1183

REV. 1.4, APR. 24, 2006

47

MX29LV800C T/B

FIGURE 21.Toggle BitTimings (During Automatic Algorithms)

tRC

VA

Address

CE#

tACC

tCE

tCH

tOE

OE#

tDF

tOEH

WE#

tOH

High Z

Valid Status

(second read)

Valid Status

(first read)

Valid Data

Q6/Q2

(stops toggling)

tBUSY

RY/BY#

NOTES:

1. VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle,

and array data read cycle.

2. CE# must be toggled when toggle bit toggling.

P/N:PM1183

REV. 1.4, APR. 24, 2006

48

MX29LV800C T/B

TABLE 13.AC CHARACTERISTICS

Parameter Std Description

Test Setup All Speed Options Unit

tREADY1

RESET# PIN Low (During Automatic Algorithms)

MAX

20

us

to Read or Write (See Note)

tREADY2

RESET# PIN Low (NOT During Automatic

Algorithms) to Read or Write (See Note)

RESET# Pulse Width (During Automatic Algorithms)

RESET# HighTime Before Read (See Note)

RY/BY# Recovery Time (to CE#, OE# go low)

MAX

500

ns

tRP

tRH

tRB

MIN

500

50

0

ns

Note: Not 100% tested

FIGURE 22. RESET# TIMINGWAVEFORM

RY/BY#

CE#, OE#

RESET#

tRH

tRP

tREADY2

Reset Timing NOT during Automatic Algorithms

tREADY1

RY/BY#

tRB

CE#, OE#

RESET#

tRP

Reset Timing during Automatic Algorithms

P/N:PM1183

REV. 1.4, APR. 24, 2006

49

MX29LV800C T/B

AC CHARACTERISTICS

TABLE 14.WORD/BYTE CONFIGURATION (BYTE#)

Parameter

Description

Speed Options

Unit

JEDEC Std

-45R -55R -70 -90

tELFL/tELFH CE# to BYTE# Switching Low or High

Max

Min

5

ns

tFLQZ

tFHQV

BYTE# Switching Low to Output HIGH Z

BYTE# Switching High to Output Active

25 25

45 55

25

70

30

90

FIGURE 23. BYTE# TIMINGWAVEFORM FOR READ OPERATIONS (BYTE# switching from byte mode to word

mode)

CE#

OE#

tELFH

BYTE#

DOUT

(Q0-Q7)

DOUT

(Q0-Q14)

Q0~Q14

Q15/A-1

DOUT

(Q15)

VA

tFHQV

P/N:PM1183

REV. 1.4, APR. 24, 2006

50

MX29LV800C T/B

FIGURE 24. BYTE# TIMINGWAVEFORM FOR READ OPERATIONS (BYTE# switching from word mode to byte

mode)

CE#

OE#

tELFH

BYTE#

DOUT

(Q0-Q14)

DOUT

(Q0-Q7)

Q0~Q14

Q15/A-1

DOUT

(Q15)

VA

tFLQZ

FIGURE 25. BYTE# TIMINGWAVEFORM FOR PROGRAM OPERATIONS

CE#

The falling edge of the last WE# signal

WE#

BYTE#

tAS

tAH

P/N:PM1183

REV. 1.4, APR. 24, 2006

51

MX29LV800C T/B

TABLE 15.TEMPORARY SECTOR UNPROTECTED

Parameter Std. Description

Test Setup All Speed Options Unit

tVIDR

tRSP

VID Rise and Fall Time (See Note)

Min

500

4

ns

us

RESET# Setup Time for Temporary Sector Unprotected

Note:

Not 100% tested

FIGURE 26.TEMPORARY SECTOR UNPROTECTEDTIMING DIAGRAM

12V

RESET#

0 or Vcc

Program or Erase Command Sequence

tVIDR

CE#

WE#

tRSP

RY/BY#

FIGURE 27. Q6 vs Q2 for Erase and Erase Suspend Operations

Enter Embedded

Erasing

Erase

Enter Erase

Erase

Suspend

Suspend Program

Resume

Erase

Erase Suspend

Read

Erase

WE#

Q6

Suspend

Program

Complete

Q2

NOTES:

The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended

P/N:PM1183

REV. 1.4, APR. 24, 2006

52

MX29LV800C T/B

FIGURE 28.TEMPORARY SECTOR UNPROTECTED ALGORITHM

Start

RESET# = VID (Note 1)

Perform Erase or Program Operation

Operation Completed

RESET# = VIH

Temporary Sector Unprotect Completed(Note 2)

Note :

1. All protected sectors are temporary unprotected.

VID=11.5V~12.5V

2. All previously protected sectors are protected again.

P/N:PM1183

REV. 1.4, APR. 24, 2006

53

MX29LV800C T/B

FIGURE 29. ID CODE READTIMINGWAVEFORM

VCC

3V

VID

ADD

A9

VIH

VIL

VIH

VIL

ADD

A0

tACC

VIH

VIL

A1

ADD

A2-A8

VIH

A10-A18 ^VIL

CE#

VIH

VIL

VIH

VIL

tCE

WE#

OE#

tOE

VIH

VIL

tDF

tOH

VIH

VIL

DATA

Q0-Q15

DATA OUT

DAH/5BH (Byte)

C2H/00C2H

22DAH/225BH (Word)

P/N:PM1183

REV. 1.4, APR. 24, 2006

54

MX29LV800C T/B

RECOMMENDED OPERATING CONDITIONS

At Device Power-Up

AC timing illustrated in Figure A is recommended for the supply voltages and the control signals at device power-up.

If the timing in the figure is ignored, the device may not operate correctly.

VCC(min)

VCC

GND

tVR

tACC

tR or tF

VIH

VIL

Valid

ADDRESS

CE#

Address

tF

tCE

tR

VIH

VIL

VIH

VIL

WE#

tF

tOE

tR

VIH

VIL

OE#

VIH

VIL

WP#/ACC

DATA

VOH

VOL

High Z

Valid

Ouput

Figure A. ACTiming at Device Power-Up

Notes

Symbol

Parameter

Min.

Max.

Unit

us/V

tVR

tR

VCC RiseTime

1

20

500000

20

Input Signal RiseTime

Input Signal Fall Time

1,2

tF

20

Notes :

1. Sampled, not 100% tested.

2. This specification is applied for not only the device power-up but also the normal operations.

P/N:PM1183

REV. 1.4, APR. 24, 2006

55

MX29LV800C T/B

ERASE AND PROGRAMMING PERFORMANCE (1)

LIMITS

PARAMETER

MIN.

TYP.(2)

MAX.(3)

UNITS

Sector Erase Time

0.7

14

9

15

sec

Chip Erase Time

Byte Programming Time

Word Programming Time

Chip Programming Time

300

360

27

us

11

9

us

Byte Mode

Word Mode

sec

5.8

17

sec

Erase/Program Cycles

100,000

Cycles

Note: 1. Not 100% Tested, Excludes external system level over head.

2.Typical values measured at 25°C, 3V.

3. Maximum values measured at 25°C, 2.7V.

LATCH-UP CHARACTERISTICS

MIN.

-1.0V

MAX.

Input Voltage with respect to GND on OE#, RESET#, A9

Input Voltage with respect to GND on all power pins, Address pins, CE# and WE#

Input Voltage with respect to GND on all I/O pins

12.5V

-1.0V

VCC + 1.0V

+100mA

-1.0V

Current

-100mA

Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.

P/N:PM1183

REV. 1.4, APR. 24, 2006

56

MX29LV800C T/B

ORDERING INFORMATION

PART NO.

ACCESS

OPERATING

STANDBY

PACKAGE

Remark

TIME (ns) Current MAX. (mA) Current MAX. (uA)

MX29LV800CTMC-55R

MX29LV800CBMC-55R

MX29LV800CTMC-70

MX29LV800CBMC-70

MX29LV800CTMC-90

MX29LV800CBMC-90

MX29LV800CTTC-55R

55

70

90

55

30

5

44 Pin SOP

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

44 Pin SOP

MX29LV800CBTC-55R

MX29LV800CTTC-70

MX29LV800CBTC-70

MX29LV800CTTC-90

MX29LV800CBTC-90

MX29LV800CTXBC-55R

MX29LV800CBXBC-55R

MX29LV800CTXBC-70

MX29LV800CBXBC-70

MX29LV800CTXBC-90

MX29LV800CBXBC-90

55

70

90

55

70

90

30

5

MX29LV800CTMI-55R

MX29LV800CBMI-55R

MX29LV800CTMI-70

MX29LV800CBMI-70

MX29LV800CTMI-90

MX29LV800CBMI-90

MX29LV800CTTI-55R

55

70

90

55

30

5

44 Pin SOP

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

MX29LV800CBTI-55R

MX29LV800CTTI-70

MX29LV800CBTI-70

55

70

30

5

P/N:PM1183

REV. 1.4, APR. 24, 2006

57

MX29LV800C T/B

PART NO.

ACCESS

OPERATING

STANDBY

PACKAGE

Remark

TIME (ns) Current MAX. (mA) Current MAX. (uA)

MX29LV800CTTI-90

MX29LV800CBTI-90

MX29LV800CTXBI-55R

MX29LV800CBXBI-55R

MX29LV800CTXBI-70

MX29LV800CBXBI-70

MX29LV800CTXBI-90

MX29LV800CBXBI-90

MX29LV800CTXEC-55R

MX29LV800CBXEC-55R

MX29LV800CTXEC-70

MX29LV800CBXEC-70

MX29LV800CTXEC-90

MX29LV800CBXEC-90

MX29LV800CTXEI-55R

MX29LV800CBXEI-55R

MX29LV800CTXEI-70

MX29LV800CBXEI-70

MX29LV800CTXEI-90

MX29LV800CBXEI-90

90

55

70

90

55

70

90

55

70

90

30

5

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

44 Pin SOP

MX29LV800CTMC-55Q

MX29LV800CBMC-55Q

MX29LV800CTMC-70G

MX29LV800CBMC-70G

55

70

30

5

PB free

P/N:PM1183

REV. 1.4, APR. 24, 2006

58

MX29LV800C T/B

PART NO.

ACCESS

OPERATING

STANDBY

PACKAGE

Remark

TIME (ns) Current MAX. (mA) Current MAX. (uA)

MX29LV800CTMC-90G

MX29LV800CBMC-90G

MX29LV800CTTC-55Q

90

55

30

5

44 Pin SOP

PB free

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

MX29LV800CBTC-55Q

MX29LV800CTTC-70G

MX29LV800CBTC-70G

MX29LV800CTTC-90G

MX29LV800CBTC-90G

MX29LV800CTXBC-55Q

MX29LV800CBXBC-55Q

MX29LV800CTXBC-70G

MX29LV800CBXBC-70G

MX29LV800CTXBC-90G

MX29LV800CBXBC-90G

55

70

90

55

70

90

30

5

PB free

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

44 Pin SOP

MX29LV800CTMI-55Q

MX29LV800CBMI-55Q

MX29LV800CTMI-70G

MX29LV800CBMI-70G

MX29LV800CTMI-90G

MX29LV800CBMI-90G

MX29LV800CTTI-55Q

55

70

90

55

30

5

PB free

44 Pin SOP

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Ball CSP

MX29LV800CBTI-55Q

MX29LV800CTTI-70G

MX29LV800CBTI-70G

MX29LV800CTTI-90G

MX29LV800CBTI-90G

MX29LV800CTXBI-55Q

55

70

90

55

30

5

PB free

(Ball Size:0.3mm)

P/N:PM1183

REV. 1.4, APR. 24, 2006

59

MX29LV800C T/B

PART NO.

ACCESS

OPERATING

STANDBY

PACKAGE

Remark

PB free

TIME (ns) Current MAX. (mA) Current MAX. (uA)

MX29LV800CBXBI-55Q

MX29LV800CTXBI-70G

MX29LV800CBXBI-70G

MX29LV800CTXBI-90G

MX29LV800CBXBI-90G

MX29LV800CTXEC-55Q

MX29LV800CBXEC-55Q

MX29LV800CTXEC-70G

MX29LV800CBXEC-70G

MX29LV800CTXEC-90G

MX29LV800CBXEC-90G

MX29LV800CTXEI-55Q

MX29LV800CBXEI-55Q

MX29LV800CTXEI-70G

MX29LV800CBXEI-70G

MX29LV800CTXEI-90G

MX29LV800CBXEI-90G

MX29LV800CTTI-45Q

MX29LV800CBTI-45Q

MX29LV800CTXBI-45Q

MX29LV800CBXBI-45Q

MX29LV800CTXEI-45Q

MX29LV800CBXEI-45Q

55

70

90

55

70

90

55

70

90

45

30

5

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Pin TSOP

(NormalType)

48 Pin TSOP

(NormalType)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.3mm)

48 Ball CSP

(Ball Size:0.4mm)

48 Ball CSP

(Ball Size:0.4mm)

P/N:PM1183

REV. 1.4, APR. 24, 2006

60

MX29LV800C T/B

PART NO.

ACCESS

OPERATING

STANDBY

PACKAGE

Remark

TIME (ns) Current MAX. (mA) Current MAX. (uA)

MX29LV800CTXHC-55R

MX29LV800CBXHC-55R

MX29LV800CTXHC-70

MX29LV800CBXHC-70

MX29LV800CTXHC-90

MX29LV800CBXHC-90

MX29LV800CTXHI-55R

MX29LV800CBXHI-55R

MX29LV800CTXHI-70

MX29LV800CBXHI-70

MX29LV800CTXHI-90

MX29LV800CBXHI-90

MX29LV800CTXHC-55Q

MX29LV800CBXHC-55Q

MX29LV800CTXHC-70G

MX29LV800CBXHC-70G

MX29LV800CTXHC-90G

MX29LV800CBXHC-90G

MX29LV800CTXHI-55Q

MX29LV800CBXHI-55Q

MX29LV800CTXHI-70G

MX29LV800CBXHI-70G

MX29LV800CTXHI-90G

MX29LV800CBXHI-90G

55

70

90

55

70

90

55

70

90

55

70

90

30

5

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

48 Ball CSP

(4 x 6 mm)

PB free

P/N:PM1183

REV. 1.4, APR. 24, 2006

61

MX29LV800C T/B

PART NAME DESCRIPTION

MX 29 LV 800 C T T C 70 G

OPTION:

G: Lead-free package

R: Restricted VCC (3.0V~3.6V)

Q: Restricted VCC (3.0V~3.6V) with Lead-free package

blank: normal

SPEED:

45: 45ns

55: 55ns

70: 70ns

90: 90ns

TEMPERATURE RANGE:

C: Commercial (0˚C to 70˚C)

I: Industrial (-40˚C to 85˚C)

PACKAGE:

M: SOP

T: TSOP

X: FBGA (CSP)

XB - 0.3mm Ball (6x8mm)

XE - 0.4mm Ball (6x8mm)

XH - 0.32mm Ball (4x6mm)

BOOT BLOCK TYPE:

T: Top Boot

B: Bottom Boot

REVISION:

C

DENSITY & MODE:

800: 8M, x8/x16 Boot Block

TYPE:

L, LV: 3V

DEVICE:

28, 29:Flash

P/N:PM1183

REV. 1.4, APR. 24, 2006

62

MX29LV800C T/B

PACKAGE INFORMATION

P/N:PM1183

REV. 1.4, APR. 24, 2006

63

MX29LV800C T/B

P/N:PM1183

REV. 1.4, APR. 24, 2006

64

MX29LV800C T/B

48-Ball CSP (for MX29LV800CTXBC/BTXBI/BBXBC/BBXBI)

P/N:PM1183

REV. 1.4, APR. 24, 2006

65

MX29LV800C T/B

48-Ball CSP (for MX29LV800CTXEC/BTXEI/BBXEC/BBXEI)

P/N:PM1183

REV. 1.4, APR. 24, 2006

66

MX29LV800C T/B

48-Ball CSP (for MX29LV800CTXHC/BTXHI/BBXHC/BBXHI)

Title: Package Outline for CSP 48BALL(4x6x1.0MM, BALL PITCH 0.5MM, BALL DIAMETER 0.32MM)

TOP VIEW

BOTTOM VIEW

6.00 ± 0.08

5.00

0.50

0.32 ± 0.05

(48X)

6

5

4

3

2

1

6

5

4

3

2

1

4.00 ± 0.08

2.50

0.50

A B C D E F G H J K L

L K J H G F E D C B A

4

A1 CORNER

A1 INDICATOR

0.63 ± 0.10

DETAIL

SIDE VIEW

0.08

SEATING PLANE

0.20 ± 0.06

Note:

1. Although many dimensions are similar to those of JEDEC Publication 95, MO-225, this specific package is not registered.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.08 mm

P/N:PM1183

REV. 1.4, APR. 24, 2006

67

MX29LV800C T/B

REVISION HISTORY

Revision No. Description

Page

P1

Date

MAY/12/2005

JUL/22/2005

1.0

1.1

1. Removed "Preliminary"

1. Added Pb-free package information for 44-SOP

2. Added "Recommended Operating Conditions"

1. Modified Erase Resume from delay 10ms to delay 400us

2. Added tCWC in table 12

P57

P54

P16,37

P28

All

1.2

JAN/12/2006

MAR/03/2006

1.3

1.4

1. Added access time:45Rns

1. Added 48-CSP(4x6mm) package

P1,3,61,67 APR/24/2006

P20,23

2. Added VLKO description

P/N:PM1183

REV. 1.4, APR. 24, 2006

68

MX29LV800C T/B

MACRONIX INTERNATIONALCO., LTD.

Headquarters:

TEL:+886-3-578-6688

FAX:+886-3-563-2888

Europe Office :

TEL:+32-2-456-8020

FAX:+32-2-456-8021

Hong Kong Office :

TEL:+86-755-834-335-79

FAX:+86-755-834-380-78

Japan Office :

Kawasaki Office :

TEL:+81-44-246-9100

FAX:+81-44-246-9105

Osaka Office :

TEL:+81-6-4807-5460

FAX:+81-6-4807-5461

Singapore Office :

TEL:+65-6346-5505

FAX:+65-6348-8096

Taipei Office :

TEL:+886-2-2509-3300

FAX:+886-2-2509-2200

MACRONIX AMERICA, INC.

TEL:+1-408-262-8887

FAX:+1-408-262-8810

http : //www.macronix.com

MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.


型号：	MX29LV800CTMC-70
厂家：	MACRONIX INTERNATIONAL
描述：	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M - BIT [ 1Mx8 / 512K X16 ] CMOS单电压3V仅限于Flash存储器闪存存储内存集成电路光电二极管
文件：	总69页 (文件大小：784K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MX29LV800CTMC-70 [Macronix]

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