MX66L51235FXDI-10G [Macronix]
3V, 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY;型号: | MX66L51235FXDI-10G |
厂家: | MACRONIX INTERNATIONAL |
描述: | 3V, 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY 时钟 内存集成电路 |
文件: | 总104页 (文件大小:1762K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MX66L51235F
MX66L51235F
3V, 512M-BIT [x 1/x 2/x 4]
CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
Key Features
• Multi I/O Support - Single I/O, Dual I/O, and Quad I/O
• Quad Peripheral Interface (QPI)
• Program/Erase Suspend and Resume operation
P/N: PM1832
MX66L51235F
Contents
1. FEATURES ..............................................................................................................................................................5
2. GENERAL DESCRIPTION .....................................................................................................................................6
Table 1. Read performance Comparison ....................................................................................................6
3. PIN CONFIGURATIONS .........................................................................................................................................7
4. PIN DESCRIPTION..................................................................................................................................................7
5. BLOCK DIAGRAM...................................................................................................................................................8
6. DATA PROTECTION................................................................................................................................................9
Table 2. Protected Area Sizes...................................................................................................................10
Table 3. 4K-bit Secured OTP Definition ....................................................................................................11
7. Memory Organization...........................................................................................................................................12
Table 4. Memory Organization ..................................................................................................................12
8. DEVICE OPERATION............................................................................................................................................13
8-1. Address Protocol ..................................................................................................................................... 15
8-2. Quad Peripheral Interface (QPI) Read Mode .......................................................................................... 17
9. COMMAND DESCRIPTION...................................................................................................................................18
Table 5. Command Set..............................................................................................................................18
9-1. Write Enable (WREN).............................................................................................................................. 23
9-2. Write Disable (WRDI)............................................................................................................................... 24
9-3. Read Identification (RDID)....................................................................................................................... 25
9-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES) ........................................... 26
9-5. Read Electronic Manufacturer ID & Device ID (REMS)........................................................................... 28
9-6. QPI ID Read (QPIID) ............................................................................................................................... 29
Table 6. ID Definitions ..............................................................................................................................29
9-7. Read Status Register (RDSR)................................................................................................................. 30
9-8. Read Configuration Register (RDCR)...................................................................................................... 31
9-9. Write Status Register (WRSR)................................................................................................................. 37
Table 7. Protection Modes.........................................................................................................................38
9-10. Enter 4-byte mode (EN4B) ...................................................................................................................... 41
9-11. Exit 4-byte mode (EX4B) ......................................................................................................................... 41
9-12. Read Data Bytes (READ) ........................................................................................................................ 42
9-13. Read Data Bytes at Higher Speed (FAST_READ) .................................................................................. 43
9-14. Dual Output Read Mode (DREAD).......................................................................................................... 44
9-15. 2 x I/O Read Mode (2READ) ................................................................................................................... 45
9-16. Quad Read Mode (QREAD) .................................................................................................................... 46
9-17. 4 x I/O Read Mode (4READ) ................................................................................................................... 47
9-18. 4 Byte Address Command Set................................................................................................................. 49
9-19. Burst Read............................................................................................................................................... 51
9-20. Performance Enhance Mode................................................................................................................... 52
9-21. Fast Boot ................................................................................................................................................. 55
Table 8. Fast Boot Register (FBR) ............................................................................................................55
9-22. Sector Erase (SE).................................................................................................................................... 58
9-23. Block Erase (BE32K)............................................................................................................................... 59
P/N: PM1832
Rev. 1.1, August 02, 2016
2
MX66L51235F
9-24. Block Erase (BE) ..................................................................................................................................... 60
9-25. Chip Erase (CE)....................................................................................................................................... 61
9-26. Page Program (PP) ................................................................................................................................. 62
9-27. 4 x I/O Page Program (4PP).................................................................................................................... 64
9-28. Deep Power-down (DP)........................................................................................................................... 65
9-29. Enter Secured OTP (ENSO).................................................................................................................... 66
9-30. Exit Secured OTP (EXSO)....................................................................................................................... 66
9-31. Read Security Register (RDSCUR)......................................................................................................... 66
9-32. Write Security Register (WRSCUR)......................................................................................................... 66
Table 9. Security Register Definition .........................................................................................................67
9-33. Write Protection Selection (WPSEL)........................................................................................................ 68
9-34. Advanced Sector Protection .................................................................................................................... 70
9-35. Program/Erase Suspend/Resume........................................................................................................... 78
9-36. Erase Suspend ........................................................................................................................................ 78
9-37. Program Suspend.................................................................................................................................... 78
9-38. Write-Resume.......................................................................................................................................... 80
9-39. No Operation (NOP) ................................................................................................................................ 80
9-40. Software Reset (Reset-Enable (RSTEN) and Reset (RST)) ................................................................... 80
9-41. Read SFDP Mode (RDSFDP).................................................................................................................. 82
Table 9. Signature and Parameter Identification Data Values ..................................................................83
Table 10. Parameter Table (0): JEDEC Flash Parameter Tables..............................................................84
Table 11. Parameter Table (1): Macronix Flash Parameter Tables............................................................86
10. RESET..................................................................................................................................................................88
Table 12. Reset Timing-(Power On)..........................................................................................................88
Table 13. Reset Timing-(Other Operation) ................................................................................................88
11. POWER-ON STATE .............................................................................................................................................89
12. ELECTRICAL SPECIFICATIONS........................................................................................................................90
Table 14. ABSOLUTE MAXIMUM RATINGS ............................................................................................90
Table 15. CAPACITANCE TA = 25°C, f = 1.0 MHz....................................................................................90
Table 16. DC CHARACTERISTICS (Temperature = -40 C to 85 C, VCC = 2.7V - 3.6V) ........................92
°
°
Table 17. AC CHARACTERISTICS (Temperature = -40 C to 85 C, VCC = 2.7V - 3.6V) .......................93
°
°
13. OPERATING CONDITIONS.................................................................................................................................94
Table 18. Power-Up/Down Voltage and Timing ........................................................................................96
13-1. INITIAL DELIVERY STATE...................................................................................................................... 96
14. ERASE AND PROGRAMMING PERFORMANCE..............................................................................................97
15. DATA RETENTION ..............................................................................................................................................97
16. LATCH-UP CHARACTERISTICS........................................................................................................................97
17. ORDERING INFORMATION................................................................................................................................98
18. PART NAME DESCRIPTION...............................................................................................................................99
19. PACKAGE INFORMATION................................................................................................................................100
20. REVISION HISTORY .........................................................................................................................................103
P/N: PM1832
Rev. 1.1, August 02, 2016
3
MX66L51235F
Figures
Figure 1. Serial Modes Supported...............................................................................................................................................13
Figure 2. Serial Input Timing........................................................................................................................................................14
Figure 3. Output Timing ...............................................................................................................................................................14
Figure 4. EAR Operation Segments ............................................................................................................................................16
Figure 5. Enable QPI Sequence..................................................................................................................................................17
Figure 6. Reset QPI Mode...........................................................................................................................................................17
Figure 7. Write Enable (WREN) Sequence (SPI Mode) ..............................................................................................................23
Figure 8. Write Enable (WREN) Sequence (QPI Mode)..............................................................................................................23
Figure 9. Write Disable (WRDI) Sequence (SPI Mode)...............................................................................................................24
Figure 10. Write Disable (WRDI) Sequence (QPI Mode).............................................................................................................25
Figure 11. Read Identification (RDID) Sequence (SPI mode only)..............................................................................................25
Figure 12. Read Electronic Signature (RES) Sequence (SPI Mode)...........................................................................................26
Figure 13. Read Electronic Signature (RES) Sequence (QPI Mode) .........................................................................................27
Figure 14. Release from Deep Power-down (RDP) Sequence (SPI Mode) ................................................................................27
Figure 15. Release from Deep Power-down (RDP) Sequence (QPI Mode)................................................................................27
Figure 16. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only) ......................................................28
Figure 17. Read Status Register (RDSR) Sequence (SPI Mode) ...............................................................................................30
Figure 18. Read Status Register (RDSR) Sequence (QPI Mode)...............................................................................................30
Figure 19. Read Configuration Register (RDCR) Sequence (SPI Mode)....................................................................................31
Figure 20. Read Configuration Register (RDCR) Sequence (QPI Mode)....................................................................................31
Figure 21. Program/Erase flow with read array data ...................................................................................................................32
Figure 22. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag) ...................................................................33
Figure 23. Write Status Register (WRSR) Sequence (SPI Mode)..............................................................................................37
Figure 24. Write Status Register (WRSR) Sequence (QPI Mode)..............................................................................................37
Figure 25. WRSR flow .................................................................................................................................................................39
Figure 26. WP# Setup Timing and Hold Timing during WRSR when SRWD=1 ..........................................................................40
Figure 27. Read Data Bytes (READ) Sequence (SPI Mode only)...............................................................................................42
Figure 28. Read at Higher Speed (FAST_READ) Sequence (SPI Mode) ...................................................................................43
Figure 29. Dual Read Mode Sequence .......................................................................................................................................44
Figure 30. 2 x I/O Read Mode Sequence (SPI Mode only) .........................................................................................................45
Figure 31. Quad Read Mode Sequence......................................................................................................................................46
Figure 32. 4 x I/O Read Mode Sequence (SPI Mode).................................................................................................................48
Figure 33. 4 x I/O Read Mode Sequence (QPI Mode).................................................................................................................48
Figure 34. Read Data Bytes using 4 Byte Address Sequence (READ4B)...................................................................................49
Figure 35. Read Data Bytes at Higher Speed using 4 Byte Address Sequence (FASTREAD4B)...............................................49
Figure 36. 2 x I/O Fast Read using 4 Byte Address Sequence (2READ4B)................................................................................50
Figure 37. 4 I/O Fast Read using 4 Byte Address sequence (4READ4B)...................................................................................50
Figure 38. SPI Mode....................................................................................................................................................................51
Figure 39. QPI Mode ...................................................................................................................................................................51
Figure 40. 4 x I/O Read performance enhance Mode Sequence (SPI Mode) ............................................................................53
Figure 41. 4 x I/O Read performance enhance Mode Sequence (QPI Mode) ............................................................................54
Figure 42. Fast Boot Sequence (QE Bit=0).................................................................................................................................56
Figure 43. Fast Boot Sequence (QE Bit=1).................................................................................................................................56
Figure 44. Read Fast Boot Register (RDFBR) Sequence ...........................................................................................................57
Figure 45. Write Fast Boot Register (WRFBR) Sequence...........................................................................................................57
Figure 46. Erase Fast Boot Register (ESFBR) Sequence...........................................................................................................57
Figure 47. Sector Erase (SE) Sequence (SPI Mode) ..................................................................................................................58
Figure 48. Sector Erase (SE) Sequence (QPI Mode)..................................................................................................................58
Figure 49. Block Erase 32KB (BE32K) Sequence (SPI Mode)....................................................................................................59
Figure 50. Block Erase 32KB (BE32K) Sequence (QPI Mode) ...................................................................................................59
Figure 51. Block Erase (BE) Sequence (SPI Mode)....................................................................................................................60
Figure 52. Block Erase (BE) Sequence (QPI Mode) ...................................................................................................................60
Figure 53. Chip Erase (CE) Sequence (SPI Mode).....................................................................................................................61
Figure 54. Chip Erase (CE) Sequence (QPI Mode).....................................................................................................................61
Figure 55. Page Program (PP) Sequence (SPI Mode)................................................................................................................63
Figure 56. Page Program (PP) Sequence (QPI Mode) ...............................................................................................................63
Figure 57. 4 x I/O Page Program (4PP) Sequence (SPI Mode only)...........................................................................................64
Figure 58. Deep Power-down (DP) Sequence (SPI Mode) .........................................................................................................65
Figure 59. Deep Power-down (DP) Sequence (QPI Mode)........................................................................................................65
Figure 60. WPSEL Flow...............................................................................................................................................................69
Figure 61. Advanced Sector Protection Overview .......................................................................................................................70
Figure 63. Read Lock Register (RDLR) Sequence......................................................................................................................71
Figure 62. Write Lock Register (WRLR) Sequence (SPI Mode)..................................................................................................71
Figure 64. SPB Lock Bit Set (SPBLK) Sequence........................................................................................................................72
Figure 65. Read SPB Lock Register (RDSPBLK) Sequence ......................................................................................................72
Figure 66. Read SPB Status (RDSPB) Sequence.......................................................................................................................74
Figure 67. SPB Erase (ESSPB) Sequence .................................................................................................................................74
Figure 68. SPB Program (WRSPB) Sequence............................................................................................................................74
Figure 69. Read DPB Register (RDDPB) Sequence...................................................................................................................75
Figure 70. Write DPB Register (WRDPB) Sequence...................................................................................................................75
Figure 71. Suspend to Read Latency ..........................................................................................................................................79
Figure 72. Resume to Read Latency...........................................................................................................................................79
Figure 73. Resume to Suspend Latency .....................................................................................................................................79
Figure 74. Software Reset Recovery...........................................................................................................................................81
Figure 75. Reset Sequence (SPI mode)......................................................................................................................................81
Figure 76. Reset Sequence (QPI mode) .....................................................................................................................................81
Figure 77. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence............................................................................82
Figure 78. RESET Timing............................................................................................................................................................88
Figure 79. Maximum Negative Overshoot Waveform..................................................................................................................90
Figure 80. Maximum Positive Overshoot Waveform....................................................................................................................90
Figure 81. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL.....................................................................................91
Figure 82. OUTPUT LOADING...................................................................................................................................................91
Figure 83. AC Timing at Device Power-Up ..................................................................................................................................94
Figure 84. Power-Down Sequence..............................................................................................................................................95
Figure 85. Power-up Timing.........................................................................................................................................................95
Figure 86. Power Up/Down and Voltage Drop.............................................................................................................................96
P/N: PM1832
Rev. 1.1, August 02, 2016
4
MX66L51235F
3V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
1. FEATURES
GENERAL
•
•
•
Command Reset
•
Supports Serial Peripheral Interface -- Mode 0 and
Mode 3
Program/Erase Suspend and Resume operation
Electronic Identification
•
Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
JEDEC 1-byte manufacturer ID and 2-byte device
ID
-
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and
1-byte device ID
Support Serial Flash Discoverable Parameters
(SFDP) mode
•
536,870,912 x 1 bit structure or 268,435,456 x 2 bits
(two I/O mode) structure or 134,217,728 x 4 bits (four
I/O mode) structure
•
•
Protocol Support
- Single I/O, Dual I/O and Quad I/O
Latch-up protected to 100mA from -1V to Vcc +1V
Low Vcc write inhibit is from 2.3V to 2.5V
Fast read for SPI mode
HARDWARE FEATURES
•
•
•
•
SCLK Input
- Serial clock input
•
SI/SIO0
- Support clock frequency up to 133MHz for all
protocols
- Serial Data Input or Serial Data Input/Output for 2
x I/O read mode and 4 x I/O read mode
SO/SIO1
- Serial Data Output or Serial Data Input/Output for
2 x I/O read mode and 4 x I/O read mode
WP#/SIO2
- Hardware write protection or serial data Input/Out-
put for 4 x I/O read mode
DNU/SIO3
- Support Fast Read, 2READ, DREAD, 4READ,
QREAD instructions.
- Configurable dummy cycle number for fast read
operation
Quad Peripheral Interface (QPI) available
Equal Sectors with 4K byte each, or Equal Blocks
with 32K byte each or Equal Blocks with 64K byte
each
•
•
•
•
•
- Do not use or serial data Input/Output for 4 x I/O
read mode
- Any Block can be erased individually
Programming :
•
•
•
RESET#
- Hardware Reset pin
PACKAGE
- 256byte page buffer
- Quad Input/Output page program(4PP) to enhance
program performance
-16-pin SOP (300mil)
-8-land WSON (8x6mm)
•
•
Typical 100,000 erase/program cycles
20 years data retention
-24-Ball BGA (5x5 ball array)
-All devices are RoHS Compliant and Halogen-
free
SOFTWARE FEATURES
•
Input Data Format
- 1-byte Command code
•
Advanced Security Features
- Block lock protection
The BP0-BP3 and T/B status bits define the size of
the area to be protected against program and erase
instructions
- Advanced sector protection function (Solid and
Password Protect)
•
Additional 4K bit security OTP
Features unique identifier
factory locked identifiable, and customer lockable
-
-
P/N: PM1832
Rev. 1.1, August 02, 2016
5
MX66L51235F
2. GENERAL DESCRIPTION
MX66L51235F is 512Mb bits Serial NOR Flash memory, which is configured as 67,108,864 x 8 internally. When it is
in two or four I/O mode, the structure becomes 268,435,456 bits x 2 or 134,217,728 bits x 4.
MX66L51235F features a serial peripheral interface and software protocol allowing operation on a simple 3-wire
bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a
serial data output (SO). Serial access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits
input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and RESET# pin become SIO0
pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX66L51235F MXSMIO® (Serial Multi I/O) provides sequential read operation on whole chip.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte),
or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX66L51235F utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Read performance Comparison
Dual Output
Fast Read
(MHz)
Quad Output
Fast Read
(MHz)
Dual IO
Fast Read
(MHz)
Quad IO
Fast Read
(MHz)
Numbers of
Dummy Cycles
Fast Read
(MHz)
4
6
-
-
-
84*
104
104
133
70
104
104*
133
104
104*
133
84
84*
104
133
8
104*
133
10
Note: * mean default status
P/N: PM1832
Rev. 1.1, August 02, 2016
6
MX66L51235F
4. PIN DESCRIPTION
3. PIN CONFIGURATIONS
16-PIN SOP (300mil)
SYMBOL
DESCRIPTION
CS#
Chip Select
1
2
3
4
5
6
7
8
SCLK
SI/SIO0
NC
DNU/SIO3
VCC
16
15
14
13
12
11
10
9
Serial Data Input (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or
4xI/O read mode)
Serial Data Output (for 1 x I/O)/
Serial Data Input & Output (for 2xI/O
or 4xI/O read mode)
SI/SIO0
RESET#
NC
NC
NC
NC
NC
NC
GND
WP#/SIO2
CS#
SO/SIO1
SCLK
SO/SIO1
Clock Input
Write protection: connect to GND or
Serial Data Input & Output (for 4xI/O
read mode)
WP#/SIO2
8-WSON (8x6mm)
Hardware Reset Pin Active low or
Serial Data Input & Output (for 4xI/O
read mode)N1 ote
RESET#/SIO3
(8WSON)
1
VCC
CS#
SO/SIO1
WP#/SIO2
GND
8
7
6
5
2
3
4
RESET#/SIO3
SCLK
DNU/SIO3 Note 2 Do Not Use or Serial Data Input &
(16SOP, 24BGA) Output (for 4xI/O read mode)
SI/SIO0
VCC
+ 3V Power Supply
GND
Ground
Notes:
(1). RESET# pin has internal pull up.
(2). When using 1 I/O or 2 I/O (QE bit not enabled), the
DNU/SIO3 pin of 16SOP & 24BGA can not connect
to GND. We suggest user to connect this pin to
VCC or floating.
24-BALL BGA (5x5 ball array)
5
NC
NC
NC
NC
NC
NC
4
3
2
1
DNU/SIO3
RESET#
VCC
WP#/SIO2
NC
NC
GND
NC
SI/SIO0
NC
SCLK
NC
SO/SIO1
NC
NC
NC
CS#
NC
A
B
C
D
E
P/N: PM1832
Rev. 1.1, August 02, 2016
7
MX66L51235F
5. BLOCK DIAGRAM
Address
Generator
Memory Array
Page Buffer
Data
Register
SI/SIO0
Y-Decoder
SRAM
Buffer
Sense
Amplifier
CS#
WP#/SIO2
Reset#/SIO3*(1)
DNU/SIO3*(2)
Mode
Logic
State
Machine
HV
Generator
SCLK
Clock Generator
Output
Buffer
SO/SIO1
Notes:
(1). For 8WSON.
(2). For 16SOP or 24BGA.
P/N: PM1832
Rev. 1.1, August 02, 2016
8
MX66L51235F
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC power-
up and power-down or from system noise.
• Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data.
•
•
Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic
Signature command (RES), and softreset command.
Advanced Security Features: there are some protection and security features which protect content from
inadvertent write and hostile access.
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be
protected as read only. The protected area definition is shown as Table 2 Protected Area Sizes, the protected
areas are more flexible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status
Register Write Protect bit.
- In four I/O and QPI mode, the feature of HPM will be disabled.
P/N: PM1832
Rev. 1.1, August 02, 2016
9
MX66L51235F
Table 2. Protected Area Sizes
Protected Area Sizes (T/B bit = 0)
Status bit
Protect Level
512Mb
BP3
0
BP2
0
BP1
0
BP0
0
0 (none)
0
0
0
1
1 (1 block, protected block 1023rd)
0
0
1
0
2 (2 blocks, protected block 1022nd~1023rd)
3 (4 blocks, protected block 1020th~1023rd)
4 (8 blocks, protected block 1016th~1023rd)
5 (16 blocks, protected block 1008th~1023rd)
6 (32 blocks, protected block 992nd~1023rd)
7 (64 blocks, protected block 960th~1023rd)
8 (128 blocks, protected block 896th~1023rd)
9 (256 blocks, protected block 768th~1023rd)
10 (512 blocks, protected block 512nd~1023rd)
11 (1024 blocks, protected all)
0
0
1
1
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
12 (1024 blocks, protected all)
1
1
0
1
13 (1024 blocks, protected all)
1
1
1
0
14 (1024 blocks, protected all)
1
1
1
1
15 (1024 blocks, protected all)
Protected Area Sizes (T/B bit = 1)
Status bit
Protect Level
512Mb
BP3
0
BP2
0
BP1
0
BP0
0
0 (none)
0
0
0
1
1 (1 block, protected block 0th)
2 (2 blocks, protected block 0th~1th)
3 (4 blocks, protected block 0th~3rd)
4 (8 blocks, protected block 0th~7th)
5 (16 blocks, protected block 0th~15th)
6 (32 blocks, protected block 0th~31st)
7 (64 blocks, protected block 0th~63rd)
8 (128 blocks, protected block 0th~127th)
9 (256 blocks, protected block 0th~255th)
10 (512 blocks, protected block 0th~511st)
11 (1024 blocks, protected all)
12 (1024 blocks, protected all)
13 (1024 blocks, protected all)
14 (1024 blocks, protected all)
15 (1024 blocks, protected all)
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
P/N: PM1832
Rev. 1.1, August 02, 2016
10
MX66L51235F
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting
device unique serial number - Which may be set by factory or system customer.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP command),
and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing Exit Security
OTP command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to "Table 9. Security Register Definition" for
security register bit definition and "Table 3. 4K-bit Secured OTP Definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range
xxx000~xxx00F
xxx010~xxx1FF
Size
Standard Factory Lock
ESN (electrical serial number)
N/A
Customer Lock
128-bit
3968-bit
Determined by customer
P/N: PM1832
Rev. 1.1, August 02, 2016
11
MX66L51235F
7. Memory Organization
Table 4. Memory Organization
Block(64K-byte) Block(32K-byte)
Sector
16383
Address Range
3FFF000h
3FFFFFFh
2047
individual 16 sectors
lock/unlock unit:4K-byte
16376
16375
3FF8000h
3FF7000h
3FF8FFFh
3FF7FFFh
1023
2046
2045
2044
2043
2042
16368
16367
3FF0000h
3FEF000h
3FF0FFFh
3FEFFFFh
16360
16359
3FE8000h
3FE7000h
3FE8FFFh
3FE7FFFh
1022
individual block
lock/unlock unit:64K-byte
16352
16351
3FE0000h
3FDF000h
3FE0FFFh
3FDFFFFh
16344
16343
3FD8000h
3FD7000h
3FD8FFFh
3FD7FFFh
1021
16336
3FD0000h
3FD0FFFh
individual block
lock/unlock unit:64K-byte
47
002F000h
002FFFFh
5
4
3
2
1
0
40
39
0028000h
027000h
0028FFFh
0027FFFh
2
1
individual block
lock/unlock unit:64K-byte
32
31
0020000h
001F000h
0020FFFh
001FFFFh
24
23
0018000h
0017000h
0018FFFh
0017FFFh
16
15
0010000h
000F000h
0010FFFh
000FFFFh
individual 16 sectors
lock/unlock unit:4K-byte
8
7
0008000h
0007000h
0008FFFh
0007FFFh
0
0
0000000h
0000FFFh
P/N: PM1832
Rev. 1.1, August 02, 2016
12
MX66L51235F
8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended
operation.
2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby
mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z.
3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode
until next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as "Serial Modes Supported".
5. For the following instructions: RDID, RDSR, RDSCUR, READ/READ4B, FAST_READ/FAST_READ4B,
2READ/2READ4B, DREAD/DREAD4B, 4READ/4READ4B, QREAD/QREAD4B, RDSFDP, RES, REMS, QPIID,
RDDPB, RDSPB, RDPASS, RDLR, RDEAR, RDFBR, RDSPBLK, RDCR, the shifted-in instruction sequence is
followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following
instructions: WREN, WRDI, WRSR, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, PP/PP4B, 4PP/4PP4B, DP,
ENSO, EXSO, WRSCUR, EN4B, EX4B, WPSEL, GBLK, GBULK, SPBLK, SUSPEND, RESUME, NOP, RSTEN,
RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will be
rejected and not executed.
6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is
neglected and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL CPHA
shift in
shift out
SCLK
SCLK
(Serial mode 0)
(Serial mode 3)
0
1
0
1
SI
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
P/N: PM1832
Rev. 1.1, August 02, 2016
13
MX66L51235F
Figure 2. Serial Input Timing
tSHSL
tSHCH
tCHCL
CS#
tCHSL
tSLCH
tCHSH
SCLK
tDVCH
tCHDX
tCLCH
MSB
LSB
SI
High-Z
SO
Figure 3. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQV
tCL
tSHQZ
tCLQX
SO
tCLQX
LSB
ADDR.LSB IN
SI
P/N: PM1832
Rev. 1.1, August 02, 2016
14
MX66L51235F
8-1. Address Protocol
The original 24 bit address protocol of serial Flash can only access density size below 128Mb. For the memory
above 128Mb, the 32bit address is requested for access higher memory size. The MX66L51235F has three different
methods ot access the whole density:
(1)Command entry 4-byte address mode
(2)Extended Address Register (EAR)
(3)4-byte Address Command Set
Enter 4-Byte Address Mode
In 4-byte Address mode, all instructions are 32-bits address clock cycles. Two dedicated instructions are available
to enter/exit this modality:
● Enter 4-byte address mode (EN4B)
● Exit 4-byte address mode (EX4B)
When 4-byte address mode is enabled, the EAR<1-0> becomes "don't care" for all instructions requiring 4-byte
address.
Extended Address Register (Configurable)
The device provides an 8-bit volatile register for extended Address Register: it indentifies the extended address
(A31~A24) above 128Mb density by using original 3-byte address.
Extended Address Register (EAR)
Bit 7
A31
Bit 6
A30
Bit 5
A29
Bit 4
A28
Bit 3
A27
Bit 2
A26
Bit 1
A25
Bit 0
A24
For the MX66L51235F the A31 to A26 are Don’t Care. During EAR, reading these bits will read as 0. The bit <1-0>
is default as "0".
P/N: PM1832
Rev. 1.1, August 02, 2016
15
MX66L51235F
Figure 4. EAR Operation Segments
03FFFFFFh
EAR<1-0>= 11
03000000h
02FFFFFFh
EAR<1-0>= 10
EAR<1-0>= 01
02000000h
01FFFFFFh
01000000h
00FFFFFFh
EAR<1-0>= 00
00000000h
When under EAR mode, Read, Program, Erase operates in the selected segment by using 3-byte address mode.
For the read operation, the whole array data can be continually read out with one command. Data output starts from
the selected 128Mb, but it can cross the boundary. When the last byte of the segment is reached, the next byte (in
a continuous reading) is the first byte of the next segment. However, the EAR (Extended Address Register) value
does not change. The random access reading can only be operated in the selected segment.
The Chip erase command will erase the whole chip and is not limited by EAR selected segment.
P/N: PM1832
Rev. 1.1, August 02, 2016
16
MX66L51235F
8-2. Quad Peripheral Interface (QPI) Read Mode
QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in
command cycles, address cycles and as well as data output cycles.
Enable QPI mode
By issuing 35H command, the QPI mode is enable. After QPI mode is enabled, the device enters quad mode (4-4-4)
without QE bit status changed.
Figure 5. Enable QPI Sequence
CS#
MODE 3
MODE 0
2
3
4
5
6
7
0
1
SCLK
SIO0
35h
SIO[3:1]
Reset QPI (RSTQIO)
To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device
returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles).
Note: For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction.
Figure 6. Reset QPI Mode
CS#
SCLK
SIO[3:0]
F5h
P/N: PM1832
Rev. 1.1, August 02, 2016
17
MX66L51235F
9. COMMAND DESCRIPTION
Table 5. Command Set
Read/Write Array Commands
2READ
(2 x I/O read
command)
Command
(byte)
READ
(normal read)
FAST READ
(fast read data)
DREAD
(1I 2O read)
QREAD
(1I 4O read)
4READ
Mode
Address Bytes
1st byte
SPI
3/4
SPI
3/4
SPI
3/4
SPI
3/4
SPI/QPI
3/4
SPI
3/4
03 (hex)
ADD1
ADD2
ADD3
0B (hex)
ADD1
ADD2
ADD3
Dummy*
BB (hex)
ADD1
ADD2
ADD3
Dummy*
3B (hex)
ADD1
ADD2
ADD3
Dummy*
EB (hex)
ADD1
6B (hex)
ADD1
ADD2
ADD3
Dummy*
2nd byte
3rd byte
ADD2
4th byte
ADD3
5th byte
Dummy*
Data Cycles
n bytes read out n bytes read out n bytes read out n bytes read out
Quad I/O read
with 6 dummy
cycles
n bytes read out
by Quad output
until CS# goes
high
until CS# goes
high
until CS# goes
high
by 2 x I/O until
CS# goes high
by Dual output
until CS# goes
high
Action
4PP
(quad page
program)
BE 32K
(block erase
32KB)
BE
Command
(byte)
PP
SE
CE
(chip erase)
(block erase
64KB)
(page program)
(sector erase)
Mode
Address Bytes
1st byte
SPI/QPI
3/4
SPI
3/4
SPI/QPI
3/4
SPI/QPI
3/4
SPI/QPI
3/4
SPI/QPI
0
02 (hex)
38 (hex)
ADD1
ADD2
ADD3
20 (hex)
ADD1
ADD2
ADD3
52 (hex)
ADD1
ADD2
ADD3
D8 (hex)
ADD1
ADD2
ADD3
60 or C7 (hex)
2nd byte
3rd byte
4th byte
5th byte
1-256
1-256
Data Cycles
to program the
selected page
quad input to
program the
selected page
to erase the
selected sector
to erase the
selected 32K
block
to erase the
selected block
to erase whole
chip
Action
* Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register.
P/N: PM1832
Rev. 1.1, August 02, 2016
18
MX66L51235F
Read/Write Array Commands (4 Byte Address Command Set)
Command
(byte)
READ4B
FAST READ4B
2READ4B
DREAD4B
4READ4B
QREAD4B
Mode
SPI
4
SPI
4
SPI
4
SPI
4
SPI/QPI
4
SPI
4
Address Bytes
1st byte
2nd byte
3rd byte
13 (hex)
0C (hex)
BC (hex)
3C (hex)
EC (hex)
6C (hex)
ADD1
ADD2
ADD3
ADD4
ADD1
ADD2
ADD3
ADD4
Dummy
ADD1
ADD2
ADD3
ADD4
Dummy
ADD1
ADD2
ADD3
ADD4
Dummy
ADD1
ADD2
ADD3
ADD4
Dummy
ADD1
ADD2
ADD3
ADD4
Dummy
4th byte
5th byte
6th byte
Data Cycles
read data byte by read data byte by read data byte by Read data byte by read data byte by Read data byte by
Action
4 byte address
4 byte address 2 x I/O with 4 byte Dual Output with 4 x I/O with 4 byte Quad Output with
address
4 byte address
address
4 byte address
BE4B
(block erase
64KB)
BE32K4B
(block erase
32KB)
SE4B
(Sector erase
4KB)
Command
(byte)
PP4B
4PP4B
Mode
SPI/QPI
4
SPI
4
SPI/QPI
4
SPI/QPI
4
SPI/QPI
4
Address Bytes
1st byte
2nd byte
3rd byte
12 (hex)
3E (hex)
DC (hex)
5C (hex)
21 (hex)
ADD1
ADD2
ADD3
ADD4
ADD1
ADD2
ADD3
ADD4
ADD1
ADD2
ADD3
ADD4
ADD1
ADD2
ADD3
ADD4
ADD1
ADD2
ADD3
ADD4
4th byte
5th byte
6th byte
Data Cycles
1-256
1-256
to program the
selected page
with 4byte
Quad input to
program the
selected page
with 4byte
to erase the
to erase the
to erase the
selected (64KB) selected (32KB) selected (4KB)
block with 4byte block with 4byte sector with 4byte
Action
address
address
address
address
address
P/N: PM1832
Rev. 1.1, August 02, 2016
19
MX66L51235F
Register/Setting Commands
RDCR
(read
WRSR
RDEAR
WREAR
RDSR
(read status
register)
Command
(byte)
WREN
WRDI
(write status/ (read extended (write extended
(write enable) (write disable)
configuration configuration
address
register)
address
register)
register)
SPI/QPI
15 (hex)
register)
SPI/QPI
01 (hex)
Values
Mode
1st byte
SPI/QPI
06 (hex)
SPI/QPI
04 (hex)
SPI/QPI
05 (hex)
SPI/QPI
C8 (hex)
SPI/QPI
C5 (hex)
2nd byte
3rd byte
4th byte
Values
5th byte
Data Cycles
1-2
1
sets the (WEL)
write enable
latch bit
resets the
(WEL) write
enable latch bit status register configuration
to read out the to read out the to write new read extended write extended
values of the values of the values of the
address
register
address
register
status/
configuration
register
Action
register
PGM/ERS
Suspend
(Suspends
Program/
Erase)
PGM/ERS
Resume
(Resumes
Program/
Erase)
WPSEL
(Write Protect
Selection)
EN4B
(enter 4-byte
mode)
EX4B
(exit 4-byte
mode)
Command
(byte)
EQIO
(Enable QPI)
RSTQIO
(Reset QPI)
Mode
1st byte
SPI/QPI
68 (hex)
SPI
QPI
SPI/QPI
B7 (hex)
SPI/QPI
E9 (hex)
SPI/QPI
SPI/QPI
35 (hex)
F5 (hex)
B0 (hex)
30 (hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
to enter and
Entering the Exiting the QPI to enter 4-byte to exit 4-byte
enable individal QPI mode
block protect
mode
mode and set mode and clear
4BYTE bit as 4BYTE bit to
Action
mode
"1"
be "0"
RDP (Release
DP (Deep
SBL
RDFBR
WRFBR
ESFBR
Command
(byte)
from deep
(Set Burst
Length)
SPI/QPI
(read fast boot (write fast boot (erase fast
power down)
power down)
register)
SPI
register)
SPI
boot register)
Mode
1st byte
SPI/QPI
B9 (hex)
SPI/QPI
AB (hex)
SPI
C0 (hex)
16(hex)
17(hex)
18(hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
1-4
4
enters deep
power down
mode
release from
deep power
down mode
to set Burst
length
Action
P/N: PM1832
Rev. 1.1, August 02, 2016
20
MX66L51235F
ID/Security Commands
REMS
(read electronic
manufacturer & (QPI ID Read)
device ID)
RDID
RES
ENSO
EXSO
Command
(byte)
QPIID
(read identific- (read electronic
RDSFDP
(enter secured (exit secured
ation)
ID)
OTP)
OTP)
Mode
Address Bytes
SPI
0
SPI/QPI
0
SPI
0
QPI
0
SPI/QPI
3
SPI/QPI
0
SPI/QPI
0
1st byte
2nd byte
3rd byte
4th byte
5th byte
9F (hex)
AB (hex)
90 (hex)
AF (hex)
5A (hex)
B1 (hex)
C1 (hex)
x
x
x
ADD1
ADD2
x
ADD1 (Note 1)
ADD3
Dummy (8)
outputs JEDEC to read out
output the
ID in QPI
interface
Read SFDP
mode
to enter the
4K-bit secured 4K-bit secured
OTP mode
to exit the
ID: 1-byte
Manufacturer
ID & 2-byte
Device ID
1-byte Device Manufacturer
ID
ID & Device ID
OTP mode
Action
WRSCUR
(write
security
register)
SPI/QPI
WRPASS
(write
password
register)
SPI
RDPASS
(read
password
register)
SPI
RDSCUR
(read security
register)
GBLK
GBULK
WRLR
RDLR
Command
(byte)
(gang block (gang block (write Lock (read Lock
lock)
unlock)
register)
register)
Mode
SPI/QPI
0
SPI/QPI
0
SPI/QPI
0
SPI
0
SPI
0
Address Bytes
0
0
0
1st byte
2nd byte
3rd byte
2B (hex)
2F (hex)
7E (hex)
98 (hex)
2C (hex)
2D (hex)
28 (hex)
27 (hex)
4th byte
5th byte
Data Cycles
2
2
1-8
1-8
to read value to set the
whole chip whole chip
of security lock-down bit write protect unprotect
register
as "1" (once
lock-down,
cannot be
updated)
Action
PASSULK
(password
unlock)
SPI
WRSPB
(SPB bit
program)
SPI
ESSPB
(all SPB bit (read SPB
erase)
SPI
0
RDSPB
SPBLK
(SPB lock
set)
RDSPBLK
(SPB lock
register read) register)
WRDPB
(write DPB
RDDPB
(read DPB
register)
SPI
Command
(byte)
status)
SPI
4
Mode
SPI
SPI
0
SPI
4
Address Bytes
0
4
0
4
1st byte
2nd byte
3rd byte
29 (hex)
E3 (hex)
ADD1
ADD2
ADD3
ADD4
E4 (hex)
E2 (hex)
ADD1
ADD2
ADD3
ADD4
1
A6 (hex)
A7 (hex)
E1 (hex)
ADD1
ADD2
ADD3
ADD4
1
E0 (hex)
ADD1
ADD2
ADD3
ADD4
1
4th byte
5th byte
Data Cycles
8
2
Action
P/N: PM1832
Rev. 1.1, August 02, 2016
21
MX66L51235F
Reset Commands
RST
(Reset
Memory)
Command
(byte)
NOP
RSTEN
(No Operation) (Reset Enable)
Mode
SPI/QPI
00 (hex)
SPI/QPI
66 (hex)
SPI/QPI
99 (hex)
1st byte
2nd byte
3rd byte
4th byte
5th byte
Action
Note 1: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SO/SIO1 which is different
from 1 x I/O condition.
Note 2: ADD=00H will output the manufacturer ID first and AD=01H will output device ID first.
Note 3: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hid-
den mode.
Note 4: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the
reset operation will be disabled.
Note 5: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)"
represents there are 8 clock cycles for the data in. Please note the number after "ADD" are based on 3-byte address
mode, for 4-byte address mode, which will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
22
MX66L51235F
9-1. Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP/
PP4B, 4PP/4PP4B, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, and WRSR, which are intended to change the
device content WEL bit should be set every time after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
Figure 7. Write Enable (WREN) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCLK
Command
06h
SI
High-Z
SO
Figure 8. Write Enable (WREN) Sequence (QPI Mode)
CS#
0
1
Mode 3
SCLK
Mode 0
Command
SIO[3:0]
06h
P/N: PM1832
Rev. 1.1, August 02, 2016
23
MX66L51235F
9-2. Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
The WEL bit is reset by following situations:
- Power-up
- Reset# pin driven low
- WRDI command completion
- WRSR command completion
- PP/PP4B command completion
- 4PP/4PP4B command completion
- SE/SE4B command completion
- BE32K/BE32K4B command completion
- BE/BE4B command completion
- CE command completion
- PGM/ERS Suspend command completion
- Reset command completion
- WRSCUR command completion
- WPSEL command completion
- GBLK command completion
- GBULK command completion
- WREAR command completion
- WRLR command completion
- WRPASS command completion
- PASSULK command completion
- SPBLK command completion
- WRSPB command completion
- ESSPB command completion
- WRDPB command completion
- WRFBR command completion
- ESFBR command completion
Figure 9. Write Disable (WRDI) Sequence (SPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
SCLK
Command
04h
SI
High-Z
SO
P/N: PM1832
Rev. 1.1, August 02, 2016
24
MX66L51235F
Figure 10. Write Disable (WRDI) Sequence (QPI Mode)
CS#
0
1
Mode 3
SCLK
Mode 0
Command
SIO[3:0]
04h
9-3. Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix
Manufacturer ID and Device ID are listed as Table 6 ID Definitions.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Figure 11. Read Identification (RDID) Sequence (SPI mode only)
CS#
0
1
2
3
4
5
6
7
8
9
10
13 14 15 16 17 18
28 29 30 31
Mode 3
Mode 0
SCLK
SI
Command
9Fh
Manufacturer Identification
Device Identification
High-Z
SO
7
6
5
2
1
0
15 14 13
MSB
3
2
1
0
MSB
P/N: PM1832
Rev. 1.1, August 02, 2016
25
MX66L51235F
9-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in Table 17 AC Characteristics. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The
RDP instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash from
deep power down mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 6 ID
Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design,
please use RDID instruction.
Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in
progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly
if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in
Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep
Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least
tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute
instruction.
Figure 12. Read Electronic Signature (RES) Sequence (SPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Command
ABh
t
3 Dummy Bytes
RES2
SI
23 22 21
MSB
3
2
1
0
Electronic Signature Out
High-Z
7
6
5
4
3
2
0
1
SO
MSB
Deep Power-down Mode
Stand-by Mode
P/N: PM1832
Rev. 1.1, August 02, 2016
26
MX66L51235F
Figure 13. Read Electronic Signature (RES) Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
SCLK
MODE 0
3 Dummy Bytes
Command
ABh
SIO[3:0]
X
X
X
X
X
X
H0 L0
MSB LSB
Data Out
Data In
Stand-by Mode
Deep Power-down Mode
Figure 14. Release from Deep Power-down (RDP) Sequence (SPI Mode)
CS#
t
RES1
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCLK
SI
Command
ABh
High-Z
SO
Deep Power-down Mode
Stand-by Mode
Figure 15. Release from Deep Power-down (RDP) Sequence (QPI Mode)
CS#
t
RES1
Mode 3
Mode 0
0
1
SCLK
Command
SIO[3:0]
ABh
Deep Power-down Mode
Stand-by Mode
P/N: PM1832
Rev. 1.1, August 02, 2016
27
MX66L51235F
9-5. Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction is an alternative to the Release from Power-down/Device ID instruction that provides both the
JEDEC assigned manufacturer ID and the specific device ID.
The REMS instruction is very similar to the Release from Power-down/Device ID instruction. The instruction is
initiated by driving the CS# pin low and shift the instruction code "90h" followed by two dummy bytes and one
bytes address (A7~A0). After which, the Manufacturer ID for Macronix (C2h) and the Device ID are shifted out
on the falling edge of SCLK with most significant bit (MSB) first. The Device ID values are listed in Table 6 of ID
Definitions. If the one-byte address is initially set to 01h, then the device ID will be read first and then followed by the
Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The
instruction is completed by driving CS# high.
Figure 16. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only)
CS#
0
1
2
3
4
5
6
7
8
9 10
Mode 3
Mode 0
SCLK
Command
90h
2 Dummy Bytes
SI
15 14 13
3
2
1
0
High-Z
SO
CS#
47
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
SCLK
ADD (1)
7
6
5
4
3
2
0
1
SI
Manufacturer ID
Device ID
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
SO
MSB
MSB
MSB
Notes:
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
P/N: PM1832
Rev. 1.1, August 02, 2016
28
MX66L51235F
9-6. QPI ID Read (QPIID)
User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue
QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant
bit (MSB) first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 6. ID Definitions
Command Type
MX66L51235F
Manufactory ID
C2
Memory type
Memory density
1A
RDID
RES
9Fh
20
Electronic ID
19
Device ID
19
ABh
90h
AFh
Manufactory ID
REMS
QPIID
C2
Manufactory ID
C2
Memory type
20
Memory density
1A
P/N: PM1832
Rev. 1.1, August 02, 2016
29
MX66L51235F
9-7. Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 17. Read Status Register (RDSR) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Mode 3
Mode 0
SCLK
SI
command
05h
Status Register Out
Status Register Out
High-Z
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 18. Read Status Register (RDSR) Sequence (QPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
N
SCLK
SIO[3:0]
05h
H0 L0 H0 L0 H0 L0
H0 L0
MSB
LSB
Status Byte Status Byte Status Byte
Status Byte
P/N: PM1832
Rev. 1.1, August 02, 2016
30
MX66L51235F
9-8. Read Configuration Register (RDCR)
The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at
any time (even in program/erase/write configuration register condition). It is recommended to check the Write in
Progress (WIP) bit before sending a new instruction when a program, erase, or write configuration register operation
is in progress.
The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration
Register data out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 19. Read Configuration Register (RDCR) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Mode 3
Mode 0
SCLK
SI
command
15h
Configuration register Out
Configuration register Out
High-Z
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 20. Read Configuration Register (RDCR) Sequence (QPI Mode)
CS#
Mode 3
Mode 0
N
0
1
2
3
4
5
6
7
SCLK
SIO[3:0]
15h
H0 L0 H0 L0 H0 L0
H0 L0
MSB
LSB
Config. Byte Config. Byte Config. Byte
Config. Byte
P/N: PM1832
Rev. 1.1, August 02, 2016
31
MX66L51235F
For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows:
Figure 21. Program/Erase flow with read array data
start
WREN command
RDSR command*
No
WEL=1?
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
No
WIP=0?
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Read array data
(same address of PGM/ERS)
No
Verify OK?
Yes
Program/erase successfully
Program/erase fail
Yes
Program/erase
another block?
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
No
Program/erase completed
P/N: PM1832
Rev. 1.1, August 02, 2016
32
MX66L51235F
Figure 22. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag)
start
WREN command
RDSR command*
No
WEL=1?
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
No
WIP=0?
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
RDSCUR command
P_FAIL/E_FAIL =1 ?
Yes
No
Program/erase successfully
Program/erase fail
Yes
Program/erase
another block?
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
No
Program/erase completed
P/N: PM1832
Rev. 1.1, August 02, 2016
33
MX66L51235F
Status Register
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the
device will not accept program/erase/write status register instruction. The program/erase command will be ignored
if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next
program/erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL
bit needs to be confirm to be 0.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area
(as defined in Table 2) of the device to against the program/erase instruction without hardware protection mode being
set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to
be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE),
Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0)
set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is unprotected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#,
RESET# are enable. While QE is "1", it performs Quad I/O mode and WP#, RESET# are disabled. In the other
word, if the system goes into four I/O mode (QE=1), the feature of HPM and RESET# will be disabled.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
Status Register
bit7
bit6
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
bit1
bit0
SRWD (status
register write
protect)
QE
(Quad
Enable)
WEL
(write enable
latch)
WIP
(write in
progress bit)
1=Quad
Enable
0=not Quad
Enable
1=write
enable
0=not write 0=not in write
1=write
operation
1=status
register write
disable
(note 1)
(note 1)
(note 1)
(note 1)
enable
operation
Non-volatile Non-volatile Non-volatile Non-volatile Non-volatile Non-volatile
bit bit bit bit bit bit
volatile bit
volatile bit
Note 1: see the Table 2 "Protected Area Size".
P/N: PM1832
Rev. 1.1, August 02, 2016
34
MX66L51235F
Configuration Register
The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured
after the CR bit is set.
ODS bit
The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as
defined in "Output Driver Strength Table") of the device. The Output Driver Strength is defaulted as 30 Ohms when
delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed.
TB bit
The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect
area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as
“0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory
device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed.
4BYTE Indicator bit
By writing EN4B instruction, the 4BYTE bit may be set as "1" to access the address length of 32-bit for memory area
of higher density (large than 128Mb). The default state is "0" as the 24-bit address mode. The 4BYTE bit may be
cleared by power-off or writing EX4B instruction to reset the state to be "0".
Configuration Register
bit7
bit6
bit5
bit4
bit3
bit2
bit1
bit0
DC1
DC0
TB
ODS 2
ODS 1
ODS 0
(Dummy
cycle 1)
(Dummy
cycle 0)
4 BYTE
Reserved
(top/bottom (output driver (output driver (output driver
selected)
strength)
strength)
strength)
0=3-byte
address
mode
0=Top area
protect
(note 2)
(note 2)
1=4-byte
address
mode
x
x
1=Bottom
area protect
(Default=0)
(note 1)
(note 1)
(note 1)
(Default=0)
volatile bit
volatile bit
volatile bit
OTP
volatile bit
volatile bit
volatile bit
Note 1: see "Output Driver Strength Table"
Note 2: see "Dummy Cycle and Frequency Table (MHz)"
P/N: PM1832
Rev. 1.1, August 02, 2016
35
MX66L51235F
Output Driver Strength Table
ODS2
ODS1
ODS0
Description
Reserved
90 Ohms
60 Ohms
45 Ohms
Note
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Impedance at VCC/2
Reserved
20 Ohms
15 Ohms
30 Ohms (Default)
Dummy Cycle and Frequency Table (MHz)
Numbers of Dummy
Dual Output Fast
Quad Output Fast
DC[1:0]
Fast Read
clock cycles
Read
104
104
104
133
Read
104
84
104
133
00 (default)
8
6
8
104
104
104
133
01
10
11
10
Numbers of Dummy
DC[1:0]
Dual IO Fast Read
clock cycles
00 (default)
4
6
8
84
01
10
11
104
104
133
10
Numbers of Dummy
DC[1:0]
Quad IO Fast Read
clock cycles
00 (default)
6
4
8
84
70
104
133
01
10
11
10
P/N: PM1832
Rev. 1.1, August 02, 2016
36
MX66L51235F
9-9. Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before
sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write
Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1,
BP0) bits to define the protected area of memory (as shown in Table 2). The WRSR also can set or reset the Quad
enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/
SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot
be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and
not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes
high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress.
The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write
Enable Latch (WEL) bit is reset.
Figure 23. Write Status Register (WRSR) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Mode 3
Mode 0
SCLK
command
01h
Status
Register In
Configuration
Register In
SI
4
15 14
13
12 11
10 9
8
2
1
0
7
6
5
3
MSB
High-Z
SO
Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command.
Figure 24. Write Status Register (WRSR) Sequence (QPI Mode)
CS#
Mode 3
Mode 0
Mode 3
Mode 0
0
1
2
3
4
5
SCLK
CR in
SR in
Command
01h
H0 L0 H1 L1
SIO[3:0]
P/N: PM1832
Rev. 1.1, August 02, 2016
37
MX66L51235F
Software Protected Mode (SPM):
-
When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0 and T/B bit, is at software protected mode (SPM).
-
When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at
software protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
Hardware Protected Mode (HPM):
-
When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and T/B bit and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0 and T/B bit.
If the system enter QPI or set QE=1, the feature of HPM will be disabled.
Table 7. Protection Modes
Mode
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
Software protection
mode (SPM)
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
bits can be changed
The SRWD, BP0-BP3 of
status register bits cannot be
changed
The protected area
cannot
be program or erase.
Hardware protection
mode (HPM)
WP#=0, SRWD bit=1
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in
Table 2.
P/N: PM1832
Rev. 1.1, August 02, 2016
38
MX66L51235F
Figure 25. WRSR flow
start
WREN command
RDSR command
No
WEL=1?
Yes
WRSR command
Write status register data
RDSR command
No
WIP=0?
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
No
Verify OK?
Yes
WRSR successfully
WRSR fail
P/N: PM1832
Rev. 1.1, August 02, 2016
39
MX66L51235F
Figure 26. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
CS#
tSHWL
tWHSL
0
1
2
3
4
5
6
7
8
9
10 11 12
13 14
15
SCLK
01h
SI
High-Z
SO
Note: WP# must be kept high until the embedded operation finish.
P/N: PM1832
Rev. 1.1, August 02, 2016
40
MX66L51235F
9-10. Enter 4-byte mode (EN4B)
The EN4B instruction enables accessing the address length of 32-bit for the memory area of higher density (larger
than 128Mb). The device default is in 24-bit address mode; after sending out the EN4B instruction, the bit5 (4BYTE
bit) of security register will be automatically set to "1" to indicate the 4-byte address mode has been enabled. Once
the 4-byte address mode is enabled, the address length becomes 32-bit instead of the default 24-bit. There are
three methods to exit the 4-byte mode: writing exit 4-byte mode (EX4B) instruction, Reset or power-off.
All instructions are accepted normally, and just the address bit is changed from 24-bit to 32-bit.
The following command don't support 4bye address: RDSFDP, RES and REMS.
The sequence of issuing EN4B instruction is: CS# goes low → sending EN4B instruction to enter 4-byte mode(
automatically set 4BYTE bit as "1") → CS# goes high.
9-11. Exit 4-byte mode (EX4B)
The EX4B instruction is executed to exit the 4-byte address mode and return to the default 3-bytes address mode.
After sending out the EX4B instruction, the bit5 (4BYTE bit) of Configuration register will be cleared to be "0" to
indicate the exit of the 4-byte address mode. Once exiting the 4-byte address mode, the address length will return to
24-bit.
The sequence of issuing EX4B instruction is: CS# goes low → sending EX4B instruction to exit 4-byte mode
(automatically clear the 4BYTE bit to be "0") → CS# goes high.
P/N: PM1832
Rev. 1.1, August 02, 2016
41
MX66L51235F
9-12. Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address can't be any location if the device is still in
3-Byte mode. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single READ instruction. The address counter rolls over to 0 when the
highest address has been reached.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte or 4-byte
address on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out.
Figure 27. Read Data Bytes (READ) Sequence (SPI Mode only)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
command
03h
24-Bit Address
(Note)
23 22 21
MSB
3
2
1
0
SI
Data Out 1
Data Out 2
High-Z
2
7
6
5
4
3
1
7
0
SO
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
42
MX66L51235F
9-13. Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address can't be any
location if the device is still in 3-Byte mode. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single FAST_READ instruction. The
address counter rolls over to 0 when the highest address has been reached.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→ 3-byte or 4-byte address on SI→ 8 dummy cycles (default)→ data out on SO→ to end FAST_
READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 28. Read at Higher Speed (FAST_READ) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
Mode 3
Mode 0
SCLK
Command
0Bh
24-Bit Address
(Note)
SI
23 22 21
3
2
1
0
High-Z
SO
CS#
47
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
SCLK
Configurable
Dummy Cycle
7
6
5
4
3
2
0
1
SI
DATA OUT 2
DATA OUT 1
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
SO
MSB
MSB
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
43
MX66L51235F
9-14. Dual Output Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address can't be any location if the device is still in 3-Byte mode. The address is
automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single DREAD instruction. The address counter rolls over to 0 when the highest address has been
reached. Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing DREAD instruction is: CS# goes low
sending DREAD instruction 3-byte or 4-byte
→
→
address on SIO0 8 dummy cycles (default) on SIO0
data out interleave on SIO1 & SIO0
to end DREAD
→
→
→
operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 29. Dual Read Mode Sequence
CS#
30 31 32
39 40 41 42 43 44 45
0
1
2
3
4
5
6
7
8
9
SCLK
…
…
Data Out
Data Out
1
Configurable
Dummy Cycle
Command
24 ADD Cycle
2
…
A23 A22
A1 A0
D4 D2
D6 D4
D7 D5
3B
D6
D7
D0
SI/SIO0
High Impedance
D1
D5 D3
SO/SIO1
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
44
MX66L51235F
9-15. 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address can't be any location if the device is still in 3-Byte mode. The address is
automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single 2READ instruction. The address counter rolls over to 0 when the highest address has been
reached. Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of
previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing 2READ instruction is: CS# goes low sending 2READ instruction 3-byte or 4-byte
→
→
address interleave on SIO1 & SIO0 4 dummy cycles (default) on SIO1 & SIO0 data out interleave on SIO1 &
→
→
SIO0 to end 2READ operation can use CS# to high at any time during data out.
→
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 30. 2 x I/O Read Mode Sequence (SPI Mode only)
CS#
Mode 3
Mode 0
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
17 18 19 20 21 22 23 24 25 26 27 28 29 30
SCLK
Data
Data
Configurable
Dummy Cycle
12 ADD Cycles
(Note)
Command
Out 1
Out 2
D6 D4 D2 D0 D6 D4 D2 D0
A22 A20 A18
A4 A2 A0
BBh
SI/SIO0
D7 D5 D3 D1 D7 D5 D3 D1
A23 A21 A19
A5 A3 A1
SO/SIO1
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
45
MX66L51235F
9-16. Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the QREAD instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address can't be any location if the device is still in 3-Byte mode. The address is automatically
increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a
single QREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once
writing QREAD instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing QREAD instruction is: CS# goes low
sending QREAD instruction → 3-byte or 4-byte
→
address on SI
8 dummy cycle (Default)
data out interleave on SO3, SO2, SO1 & SO0
to end QREAD
→
→
→
operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 31. Quad Read Mode Sequence
CS#
29 30 31 32 33
38 39 40 41 42
0
1
2
3
4
5
6
7
8
9
SCLK
…
…
Configurable
dummy cycles
Data
Out 1
Data Data
Out 2 Out 3
Command
6B
24 ADD Cycles
…
A23A22
A2 A1 A0
D4 D0 D4 D0 D4
SIO0
SIO1
SIO2
SIO3
High Impedance
High Impedance
High Impedance
D5 D1 D5 D1 D5
D6 D2 D6 D2 D6
D7 D3 D7 D3 D7
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
46
MX66L51235F
9-17. 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address can't be any location if the device is still in 3-Byte mode. The address is automatically
increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a
single 4READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once
writing 4READ instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low sending
→
4READ instruction 3-byte or 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0 6 dummy cycles (Default)
→
→
data out interleave on SIO3, SIO2, SIO1 & SIO0 to end 4READ operation can use CS# to high at any time
→
→
during data out.
4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence
of issuing 4READ instruction QPI mode is: CS# goes low sending 4READ instruction 3-byte or 4-byte address
→
→
interleave on SIO3, SIO2, SIO1 & SIO0 6 dummy cycles (Default) data out interleave on SIO3, SIO2, SIO1 &
→
→
SIO0 to end 4READ operation can use CS# to high at any time during data out.
→
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
P/N: PM1832
Rev. 1.1, August 02, 2016
47
MX66L51235F
Figure 32. 4 x I/O Read Mode Sequence (SPI Mode)
CS#
23 24
10 11 12 13 14 15 16 17 18 19 20 21 22
Mode 3
Mode 0
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
SCLK
Data
Data
Data
Command
6 ADD Cycles
Performance
enhance
Out 1
Out 2 Out 3
indicator (Note 1)
Configurable
Dummy Cycle (Note 3)
A20 A16 A12 A8 A4 A0
D4 D0 D4 D0 D4 D0
P4 P0
EBh
SIO0
SIO1
SIO2
SIO3
A21 A17 A13 A9 A5 A1
A22 A18 A14 A10 A6 A2
D5 D1 D5 D1 D5 D1
D6 D2 D6 D2 D6 D2
P5 P1
P6 P2
A23 A19 A15 A11 A7 A3
D7 D3 D7 D3 D7 D3
P7 P3
Notes:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
Figure 33. 4 x I/O Read Mode Sequence (QPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MODE 3
MODE 0
MODE 3
MODE 0
SCLK
EB
SIO[3:0]
H0 L0 H1 L1 H2 L2 H3 L3
A5 A4 A3 A2 A1 A0
X
X
X
X
X
X
MSB
Data Out
24-bit Address
(Note)
Configurable
Dummy Cycle
Data In
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
48
MX66L51235F
9-18. 4 Byte Address Command Set
The operation of 4-byte address command set was very similar to original 3-byte address command set. The
only different is all the 4-byte command set request 4-byte address (A31-A0) followed by instruction code. The
command set support 4-byte address including: READ4B, Fast_Read4B, DREAD4B, 2READ4B, QREAD4B,
4READ4B, PP4B, 4PP4B, SE4B, BE32K4B, BE4B. Please note that it is not necessary to issue EN4B command
before issuing any of 4-byte command set.
Figure 34. Read Data Bytes using 4 Byte Address Sequence (READ4B)
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Command
13h
32-bit address
31 30 29
MSB
3
2
1
0
SI
DataOut 1
DataOut 2
7
High Impedance
2
SO
7
6
5
4
3
1
0
MSB
Figure 35. Read Data Bytes at Higher Speed using 4 Byte Address Sequence (FASTREAD4B)
CS#
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39
SCLK
Command
0Ch
32-bit address
31 30 29
3
2
1
0
SI
High Impedance
SO
CS#
55
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54
SCLK
Configurable
Dummy cycles
SI
7
6
5
4
3
2
0
1
DATAOUT2
DATAOUT1
7
6
5
4
3
2
1
0
7
SO
7
6
5
4
3
2
0
1
MSB
MSB
MSB
P/N: PM1832
Rev. 1.1, August 02, 2016
49
MX66L51235F
Figure 36. 2 x I/O Fast Read using 4 Byte Address Sequence (2READ4B)
CS#
Mode 3
Mode 0
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
21 22 23 24 25 26 27 28 29 30 31 32 33 34
SCLK
Configurable
Dummy Cycle
(Note)
Data
Out 1
Data
Out 2
16 ADD Cycles
Command
D6 D4 D2 D0 D6 D4 D2 D0
A30 A28 A26
A31 A29 A27
A4 A2 A0
BCh
SI/SIO0
D7 D5 D3 D1 D7 D5 D3 D1
A5 A3 A1
SO/SIO1
Note: Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
Figure 37. 4 I/O Fast Read using 4 Byte Address sequence (4READ4B)
CS#
23 24 25 26
Mode 3
Mode 0
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
SCLK
Command
8 ADD Cycles
Performance
Data
Out 1
Data
Out 2
Data
Out 3
enhance
indicator
Configurable
Dummy Cycle
(Note)
A16
A12 A8 A4 A0
D4 D0 D4 D0 D4 D0
A28 A24
A29 A25
A20
P4 P0
ECh
SIO0
SIO1
SIO2
SIO3
A21 A17 A13 A9 A5 A1
P5 P1
P6 P2
P7 P3
D5 D1 D5 D1 D5 D1
D6 D2 D6 D2 D6 D2
A30 A26 A22 A18 A14 A10 A6 A2
A31 A27
A23 A19 A15 A11 A7 A3
D7 D3 D7 D3 D7 D3
Note: Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
P/N: PM1832
Rev. 1.1, August 02, 2016
50
MX66L51235F
9-19. Burst Read
The Burst Read feature allows applications to fill a cache line with a fixed length of data without using multiple read
commands. Burst Read is disabled by default at power-up or reset. Burst Read is enabled by setting the Burst
Length. When the Burst Length is set, reads will wrap on the selected boundary (8/16/32/64-bytes) containing the
initial target address. For example if an 8-byte Wrap Depth is selected, reads will wrap on the 8-byte-page-aligned
boundary containing the initial read address.
To set the Burst Length, drive CS# low → send SET BURST LENGTH instruction code → send WRAP CODE
→drive CS# high. Refer to the table below for valid 8-bit Wrap Codes and their corresponding Wrap Depth.
Data
00h
01h
02h
03h
1xh
Wrap Around
Wrap Depth
8-byte
Yes
Yes
Yes
Yes
No
16-byte
32-byte
64-byte
X
Once Burst Read is enabled, it will remain enabled until the device is power-cycled or reset. The SPI and QPI mode
4READ and 4READ4B read commands support the wrap around feature after Burst Read is enabled. To change
the wrap depth, resend the Burst Read instruction with the appropriate Wrap Code. To disable Burst Read, send the
Burst Read instruction with Wrap Code 1xh. “EBh” supports wrap around feature after wrap around is enabled. Both
SPI (8 clocks) and QPI (2 clocks) command cycle can be accepted by this instruction. The SIO[3:1] are don't care
during SPI mode.
Figure 38. Burst Read - SPI Mode
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
SCLK
SIO
D7
D6
D5
D4
D3
D2
D1
D0
C0h
Figure 39. Burst Read - QPI Mode
CS#
0
1
2
3
Mode 3
Mode 0
SCLK
C0h
H0
L0
SIO[3:0]
MSB LSB
Note: MSB=Most Significant Bit
LSB=Least Significant Bit
P/N: PM1832
Rev. 1.1, August 02, 2016
51
MX66L51235F
9-20. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles.
Performance enhance mode is supported in both SPI and QPI mode.
In QPI mode, “EBh” "ECh" and SPI “EBh” "ECh" commands support enhance mode. The performance enhance
mode is not supported in dual I/O mode.
To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh
can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer
toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered.
Issuing ”FFh” data cycle can also exit enhance mode. The system then will leave performance enhance mode and
return to normal operation.
After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of
the first clock as address instead of command cycle.
This sequence of issuing 4READ instruction especially useful in random access: CS# goes low→send 4READ
instruction→3-bytes or 4-bytes address interleave on SIO3, SIO2, SIO1 & SIO0→performance enhance toggling
bit P[7:0]→ 4 dummy cycles (Default) →data out until CS# goes high → CS# goes low (the following 4READ
instruction is ignored) → 3-bytes or 4-bytes random access address.
To conduct the Performance Enhance Mode Reset operation in SPI mode, FFh data cycle(8 clocks in 3-byte
address mode)/3FFh data cycle(10 clocks in 4-byte address mode), should be issued in 1I/O sequence. In QPI
Mode, FFFFFFFFh data cycle(8 clocks in 3-byte address mode)/FFFFFFFFFFh data cycle (10 clocks in 4-byte
address mode), in 4I/O should be issued.
If the system controller is being Reset during operation, the flash device will return to the standard SPI operation.
P/N: PM1832
Rev. 1.1, August 02, 2016
52
MX66L51235F
Figure 40. 4 x I/O Read Performance Enhance Mode Sequence (SPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
n
SCLK
Data
Data
Out 2
Data
Out n
Command
6 ADD Cycles
(Note 2)
Performance
enhance
Out 1
indicator (Note 1)
Configurable
Dummy Cycle (Note 2)
P4 P0
D4 D0 D4 D0
D4 D0
A20 A16 A12 A8 A4 A0
EBh
SIO0
SIO1
SIO2
A21 A17 A13 A9 A5 A1
A22 A18 A14 A10 A6 A2
D5 D1 D5 D1
D6 D2 D6 D2
D5 D1
D6 D2
P5 P1
P6 P2
A23 A19 A15 A11 A7 A3
D7 D3 D7 D3
D7 D3
P7 P3
SIO3
CS#
n+1
...........
n+7......n+9 ........... n+13
...........
Mode 3
Mode 0
SCLK
Data
Out 1
Data
Out 2
Data
Out n
6 ADD Cycles
(Note 2)
Performance
enhance
indicator (Note 1)
Configurable
Dummy Cycle (Note 2)
D4 D0 D4 D0
D4 D0
P4 P0
A20 A16 A12 A8 A4 A0
SIO0
SIO1
SIO2
SIO3
D5 D1 D5 D1
D6 D2 D6 D2
D5 D1
D6 D2
A21 A17 A13 A9 A5 A1
A22 A18 A14 A10 A6 A2
P5 P1
P6 P2
D7 D3 D7 D3
D7 D3
A23 A19 A15 A11 A7 A3
P7 P3
Notes:
1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator.
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
P/N: PM1832
Rev. 1.1, August 02, 2016
53
MX66L51235F
Figure 41. 4 x I/O Read Performance Enhance Mode Sequence (QPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
SCLK
EBh
SIO[3:0]
X
X
X
X
H0 L0 H1 L1
MSB LSB MSB LSB
A5 A4 A3 A2 A1 A0
P(7:4)P(3:0)
Data In
Data Out
performance
enhance
indicator
Configurable
Dummy Cycle (Note 1)
CS#
SCLK
n+1 .............
Mode 0
SIO[3:0]
X
X
X
X
H0 L0 H1 L1
MSB LSB MSB LSB
A5 A4 A3 A2 A1 A0
P(7:4)P(3:0)
Data Out
6 Address cycles
(Note)
performance
enhance
indicator
Configurable
Dummy Cycle (Note 1)
Notes:
1.
Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
2.
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF.
P/N: PM1832
Rev. 1.1, August 02, 2016
54
MX66L51235F
9-21. Fast Boot
The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset
without any read instruction.
A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of
delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and
ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register
bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default
number of delay cycles is 13 cycles, and there is a 16bytes boundary address for the start of boot code access.
When CS# starts to go low, data begins to output from default address after the delay cycles (default as 13 cycles).
After CS# returns to go high, the device will go back to standard SPI mode and user can start to input command. In
the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output.
Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle,
reset command, or hardware reset operation.
The fast Boot feature can support Single I/O and Quad I/O interface. If the QE bit of Status Register is “0”, the data
is output by Single I/O interface. If the QE bit of Status Register is set to “1”, the data is output by Quad I/O interface.
Table 8. Fast Boot Register (FBR)
Bits
Description
FBSA (FastBoot Start
Address)
Bit Status
16 bytes boundary address for the start of boot
code access.
Default State
Type
Non-
Volatile
31 to 4
FFFFFFF
Non-
Volatile
3
2 to 1
0
x
1
11
1
00: 7 delay cycles
01: 9 delay cycles
10: 11 delay cycles
11: 13 delay cycles
0=FastBoot is enabled.
1=FastBoot is not enabled.
FBSD (FastBoot Start
Delay Cycle)
Non-
Volatile
Non-
Volatile
FBE (FastBoot Enable)
Note: If FBSD = 11, the maximum clock frequency is 133 MHz
If FBSD = 10, the maximum clock frequency is 104 MHz
If FBSD = 01, the maximum clock frequency is 84 MHz
If FBSD = 00, the maximum clock frequency is 70 MHz
P/N: PM1832
Rev. 1.1, August 02, 2016
55
MX66L51235F
Figure 42. Fast Boot Sequence (QE Bit=0)
CS#
0
-
n+1
n+13 n+15
n+12 n+14
n+10n+11
Mode 3
Mode 0
-
-
-
-
-
n
n+2
n+4 n+5 n+6
n+8 n+9
n+7
n+3
SCLK
SI
Delay Cycles
Don’t care or High Impedance
Data Out 1
Data Out 2
High Impedance
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
MSB
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
Figure 43. Fast Boot Sequence (QE Bit=1)
CS#
-
-
-
-
-
-
-
n
n+1 n+2 n+3 n+5 n+6 n+7 n+8 n+9
0
Mode 3
Mode 0
SCLK
Data
Out 1
Delay Cycles
Data
Data
Data
Out 3
Out 2
Out 4
High Impedance
4
0
0
4
4
4
0
4
0
SIO0
SIO1
SIO2
SIO3
High Impedance
High Impedance
High Impedance
5
6
7
1
5
6
7
1
5
6
1
5
6
7
1
2
3
5
6
7
2
3
2
3
2
3
7
MSB
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
P/N: PM1832
Rev. 1.1, August 02, 2016
56
MX66L51235F
Figure 44. Read Fast Boot Register (RDFBR) Sequence
CS#
0
1
2
3
4
5
6
7
8
9
10
37 38 39 40 41
Mode 3
Mode 0
SCLK
Command
16h
SI
Data Out 1
Data Out 2
26 25 24 7 6
High-Z
SO
7
6
5
MSB
MSB
Figure 45. Write Fast Boot Register (WRFBR) Sequence
CS#
0
1
2
3
4
5
6
7
8
9
37 38 39
Mode 3
Mode 0
10
SCLK
Command
17h
Fast Boot Register
SI
7
6
26 25 24
5
MSB
High-Z
SO
Figure 46. Erase Fast Boot Register (ESFBR) Sequence
CS#
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCLK
Command
18h
SI
High-Z
SO
P/N: PM1832
Rev. 1.1, August 02, 2016
57
MX66L51235F
9-22. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used
for any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit
before sending the Sector Erase (SE). Any address of the sector (Please refer to "Table 4. Memory Organization")
is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least
significant bit of the address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. Address bits [Am-A12] (Am is the most significant address) select
the sector address.
To enter the 4-byte address mode, please refer to the "9-10. Enter 4-byte mode (EN4B)" section.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte or 4-byte address
on SI→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE
timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Sector Erase (SE) instruction will not be executed on the block.
Figure 47. Sector Erase (SE) Sequence (SPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
24-Bit Address
(Note)
Command
20h
SI
A23 A22
A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 48. Sector Erase (SE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
(Note)
Command
SIO[3:0]
20h A5 A4 A3 A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
58
MX66L51235F
9-23. Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch
(WEL) bit before sending the Block Erase (BE32K). Any address of the block (Please refer to "Table 4. Memory
Organization") is a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte
boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not
executed.
Address bits [Am-A15] (Am is the most significant address) select the 32KB block address. The default read mode is
3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or
to define EAR bit. To enter the 4-byte address mode, please refer to the "9-10. Enter 4-byte mode (EN4B)" section.
The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte or 4-byte
address on SI→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the
tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector
Protect Mode), the Block Erase (BE32K) instruction will not be executed on the block.
Figure 49. Block Erase 32KB (BE32K) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
Mode 3
Mode 0
SCLK
Command
52h
24-Bit Address
(Note)
SI
A23 A22
A2
A0
A1
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 50. Block Erase 32KB (BE32K) Sequence (QPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
SCLK
24-Bit Address
(Note)
Command
SIO[3:0]
52h A5 A4 A3 A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
59
MX66L51235F
9-24. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "Table 4. Memory
Organization") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the "9-10. Enter
4-byte mode (EN4B)" section.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte or 4-byte address
on SI→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block
is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode),
the Block Erase (BE) instruction will not be executed on the block.
Figure 51. Block Erase (BE) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
Mode 3
Mode 0
SCLK
Command
D8h
24-Bit Address
(Note)
SI
A23 A22
A2
A0
A1
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 52. Block Erase (BE) Sequence (QPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
SCLK
24-Bit Address
(Note)
Command
SIO[3:0]
D8h A5 A4 A3 A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
60
MX66L51235F
9-25. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE
timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
When the chip is under "Block protect (BP) Mode" (WPSEL=0). The Chip Erase (CE) instruction will not be
executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0".
When the chip is under "Advanced Sector Protect Mode" (WPSEL=1). The Chip Erase (CE) instruction will be
executed on unprotected block. The protected Block will be skipped. If one (or more) 4K byte sector was protected
in top or bottom 64K byte block, the protected block will also skip the chip erase command.
Figure 53. Chip Erase (CE) Sequence (SPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
SCLK
SI
Command
60h or C7h
Figure 54. Chip Erase (CE) Sequence (QPI Mode)
CS#
0
1
Mode 3
Mode 0
SCLK
Command
60h or C7h
SIO[3:0]
P/N: PM1832
Rev. 1.1, August 02, 2016
61
MX66L51235F
9-26. Page Program (PP)
The Page Program (PP) instruction is for programming memory bits to "0". One to 256 bytes can be sent to the
device to be programmed. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL)
bit before sending the Page Program (PP). If more than 256 data bytes are sent to the device, only the last 256
data bytes will be accepted and the previous data bytes will be disregarded. The Page Program instruction requires
that all the data bytes fall within the same 256-byte page. The low order address byte A[7:0] specifies the starting
address within the selected page. Bytes that will cross a page boundary will wrap to the beginning of the selected
page. The device can accept (256 minus A[7:0]) data bytes without wrapping. If 256 data bytes are going to be
programmed, A[7:0] should be set to 0.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the "9-10. Enter
4-byte mode (EN4B)" section.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte or 4-byte address
on SI→ at least 1-byte on data on SI→ CS# goes high.
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be
executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP
timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Page Program (PP) instruction will not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM1832
Rev. 1.1, August 02, 2016
62
MX66L51235F
Figure 55. Page Program (PP) Sequence (SPI Mode)
CS#
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
02h
Data Byte 1
24-Bit Address
(Note)
23 22 21
MSB
3
2
1
0
7
6
5
4
3
2
0
1
SI
MSB
CS#
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCLK
Data Byte 2
Data Byte 3
Data Byte 256
7
6
5
4
3
2
0
7
6
5
4
3
2
0
7
6
5
4
3
2
0
1
1
1
SI
MSB
MSB
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 56. Page Program (PP) Sequence (QPI Mode)
CS#
Mode 3
Mode 0
0
1
2
SCLK
Command
02h
24-Bit Address
(Note)
H255 L255
SIO[3:0]
H0 L0 H1 L1 H2 L2 H3 L3
Data Byte Data Byte Data Byte Data Byte
A5 A4 A3 A2 A1 A0
......
Data Byte
256
Data In
1
2
3
4
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
63
MX66L51235F
9-27. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to
"1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1,
SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of
application. The other function descriptions are as same as standard page program.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the "9-10. Enter
4-byte mode (EN4B)" section.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte or 4-byte
address on SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector
Protect Mode), the Quad Page Program (4PP) instruction will not be executed.
Figure 57. 4 x I/O Page Program (4PP) Sequence (SPI Mode only)
CS#
10 11 12 13 14 15 16 17 18 19 20 21
Data Data Data Data
0
1
2
3
4
5
6
7
8
9
Mode 3
Mode 0
SCLK
Command
38h
6 Address cycle
Byte 1 Byte 2 Byte 3 Byte 4
A16
A8 A4 A0
A12
A20
4
0
4
0
4
0
4
0
SIO0
SIO1
SIO2
SIO3
A21 A17 A13 A9 A5 A1
5
6
7
1
2
3
5
6
7
1
2
3
5
6
7
1
2
3
5
6
7
1
2
3
A22
A14 A10 A6 A2
A18
A7
A23 A19 A15 A11
A3
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1832
Rev. 1.1, August 02, 2016
64
MX66L51235F
9-28. Deep Power-down (DP)
The Deep Power-down (DP) instruction places the device into a minimum power consumption state, Deep
Powerdown mode, in which the quiescent current is reduced from ISB1 to ISB2.
The sequence of issuing DP instruction: CS# goes low→ send DP instruction code→ CS# goes high. The CS# must
go high at the byte boundary (after exactly eighth bits of the instruction code have been latched-in); otherwise the
instruction will not be executed. Both SPI (8 clocks) and QPI (2 clocks) command cycle can be accepted by this
instruction. SIO[3:1] are "don't care".
After CS# goes high there is a delay of tDP before the device transitions from Stand-by mode to Deep Power-down
mode and before the current reduces from ISB1 to ISB2. Once in Deep Power-down mode, all instructions will be
ignored except Release from Deep Power-down (RDP).
The device exits Deep Power-down mode and returns to Stand-by mode if it receives a Release from Deep
Powerdown (RDP) instruction, power-cycle, or reset. Please refer to "Figure 14. Release from Deep Power-down (RDP)
Sequence (SPI Mode)" and "Figure 15. Release from Deep Power-down (RDP) Sequence (QPI Mode)".
Figure 58. Deep Power-down (DP) Sequence (SPI Mode)
CS#
t
DP
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCLK
SI
Command
B9h
Stand-by Mode
Deep Power-down Mode
Figure 59. Deep Power-down (DP) Sequence (QPI Mode)
CS#
t
DP
Mode 3
Mode 0
0
1
SCLK
Command
SIO[3:0]
B9h
Stand-by Mode
Deep Power-down Mode
P/N: PM1832
Rev. 1.1, August 02, 2016
65
MX66L51235F
9-29. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While device is in 4K-bit secured
OTPmode, main array access is not available. The additional 4K-bit secured OTP is independent from main array
and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Please note that after issuing ENSO command user can only access secure OTP region with standard read or
program procedure. Furthermore, once security OTP is lock down, only read related commands are valid.
9-30. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-31. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-32. Write Security Register (WRSCUR)
The WRSCUR instruction sets the LDSO bit of the Security Register. The WREN (Write Enable) instruction is
required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit)
for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
P/N: PM1832
Rev. 1.1, August 02, 2016
66
MX66L51235F
Security Register
The definition of the Security Register bits is as below:
Write Protection Selection bit. Please reference to "9-33. Write Protection Selection (WPSEL)".
Erase Fail bit. The Erase Fail bit is a status flag, which shows the status of last Erase operation. It will be set to "1",
if the erase operation fails. It will be set to "0", if the last operation is successful. Please note that it will not interrupt
or stop any operation in the flash memory.
Program Fail bit. The Program Fail bit is a status flag, which shows the status of last Program operation. It will be
set to "1", if the program operation fails or the program region is protected. It will be set to "0", if the last operation is
successful. Please note that it will not interrupt or stop any operation in the flash memory.
Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use
ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB
is set to "1". ESB is cleared to "0" after erase operation resumes.
Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may
use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command,
PSB is set to "1". PSB is cleared to "0" after program operation resumes.
Secured OTP Indicator bit. The Secured OTP indicator bit shows the Secured OTP area is locked by factory or
not. When it is "0", it indicates non-factory lock; "1" indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for
customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured
OTP area cannot be updated any more. While it is in 4K-bit secured OTP mode, main array access is not allowed.
Table 9. Security Register Definition
bit7
bit6
bit5
bit4
bit3
bit2
bit1
bit0
ESB
(Erase
PSB
(Program
LDSO
(indicate if
Secured OTP
indicator bit
WPSEL
E_FAIL
P_FAIL
Reserved
Suspend bit) Suspend bit) lock-down)
0=Block Lock
(BP) protection
mode
1=Advanced
Sector protection
mode
0=normal
Program
succeed
1=indicate
Program
failed
0 = not lock-
0=normal
Erase
succeed
1=indicate
Erase failed
(default=0)
0=Erase
is not
suspended suspended
1= Erase 1= Program
suspended suspended
0=Program
is not
down
1 = lock-down
(cannot
0 = non-
factory
lock
1 = factory
lock
-
program/
erase
OTP)
(default=0)
(default=0)
(default=0)
(default=0)
Non-volatile
bit
Non-volatile bit
(OTP)
Non-volatile
bit (OTP)
Volatile bit
Volatile bit Volatile bit Volatile bit
Volatile bit
(OTP)
P/N: PM1832
Rev. 1.1, August 02, 2016
67
MX66L51235F
9-33. Write Protection Selection (WPSEL)
There are two write protection methods provided on this device, (1) Block Lock (BP) protection mode (2) Advanced
Sector protection mode. If WPSEL=0, flash is under BP protection mode . If WPSEL=1, flash is under Advanced
Sector protection mode. The default value of WPSEL is “0”. WPSEL command can be used to set WPSEL=1.
Please note that WPSEL is an OTP bit. Once WPSEL is set to 1, there is no chance to recovery WPSEL back
to “0”. If the flash is put on BP mode, the Advanced Sector protection mode is disabled. Contrarily, if flash is on the
Advanced Sector protection mode, the BP mode is disabled.
Every time after the system is powered-on, and the Security Register bit 7 is checked to be WPSEL=1, all
the blocks or sectors will be write protected by Dynamic Protected Bit (DPB) in default. User may only unlock
the blocks or sectors via GBULK instruction. Program or erase functions can only be operated after the Unlock
instruction is conducted.
When WPSEL = 0: Block Lock (BP) protection mode,
Array is protected by BP3~BP0 and BP bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7 of status
register that can be set by WRSR command.
When WPSEL =1: Advanced Sector protection mode,
Blocks are individually protected by their own SPB or DPB lock bits which are set to “1” after power up. When the
system accepts and executes WPSEL instruction, the bit 7 in security register will be set. It will activate WRLR,
RDLR, WRPASS, RDPASS, PASSULK, WRSPB, ESSPB, SPBLK, RDSPBLK, WRDPB, RDDPB, GBLK, GBULK
etc instructions to conduct block lock protection and replace the original Software Protect Mode (SPM) use (BP3~BP0)
indicated block methods. Under the Advanced Sector protection mode (WPSEL=1), hardware protection is
performed by driving WP#=0. Once WP#=0 all array blocks/sectors are protected regardless of the contents of SPB
or DPB lock bits.
The sequence of issuing WPSEL instruction is: CS# goes low → sending WPSEL instruction to enter the individual
block protect mode → CS# goes high. The WREN command must be executed before issuing the WPSEL
command.
Write Protection Selection
Start
(Default in BP Mode)
WPSEL=1
WPSEL=0
Set
WPSEL Bit
Advanced
Sector Protection
Block Protection
(BP)
Set
Bit 1 =0
Lock Register
Bit 2 =0
Password
Protection
Solid
Protection
Dynamic
Protection
P/N: PM1832
Rev. 1.1, August 02, 2016
68
MX66L51235F
Figure 60. WPSEL Flow
start
WREN command
RDSCUR command
Yes
WPSEL=1?
No
WPSEL disable,
block protected by BP[3:0]
WPSEL command
RDSR command
No
WIP=0?
Yes
RDSCUR command
No
WPSEL=1?
Yes
WPSEL set successfully
WPSEL set fail
WPSEL enable.
Block protected by Advance Sector Protection
P/N: PM1832
Rev. 1.1, August 02, 2016
69
MX66L51235F
9-34. Advanced Sector Protection
There are two ways to implement software Advanced Sector Protection on this device: Password method or Solid
method. Through these two protection methods, user can disable or enable the programming or erasing operation
to any individual sector or all sectors.
There is a non-volatile (SPB) and volatile (DPB) protection bit related to the single sector in main flash array. Each
of the sectors is protected from programming or erasing operation when the bit is set. The temporary unprotect solid
write protect bit (USPB) can temporarily unprotect the sectors protected by SPB.
The figure below helps describing an overview of these methods. The device is default to the Solid mode when
shipped from factory. The detail algorithm of advanced sector protection is shown as follows:
Figure 61. Advanced Sector Protection Overview
Start
Bit 1=0
Bit 2=0
Set
Lock Register ?
Solid Protection Mode
Password Protection Mode
Set 64 bit Password
Set
SPBLK = 0
SPB Lock bit locked
All SPB can not be changeable
SPB Lock Bit ?
SPBLK = 1
SPB Lock bit Unlocked
SPB is changeable
Temporary Unprotect
SPB bit (USPB)
SPB Access Register
(SPB)
Dynamic Protect Bit Register
(DPB)
Sector Array
SPB=1 Write Protect
USPB=0 SPB bit is disabled
USPB=1 SPB bit is effective
DPB=1 sector protect
SPB=0 Write Unprotect
DPB=0 sector unprotect
DPB 0
DPB 1
SA 0
SA 1
SPB 0
SPB 1
DPB 2
SA 2
SPB 2
:
:
:
:
:
:
USPB
DPB N-1
DPB N
SA N-1
SA N
SPB N-1
SPB N
P/N: PM1832
Rev. 1.1, August 02, 2016
70
MX66L51235F
9-34-1. Lock Register
User can choose favorite sector protecting method via setting Lock Register bits 1 and 2. Lock Register is a 16-
bit one-time programmable register. Once bit 1 or bit 2 has been programmed (cleared to "0"), they will be locked
in that mode and the others will be disabled permanently. Bit 1 and Bit 2 can not be programmed at the same time,
otherwise the device will abort the operation.
If user selects Password Protection mode, the password setting is required. User can set password by issuing
WRPASS command.
Lock Register
Bit 15-3
Bit 2
Bit 1
Bit0
Reserved
Password Protection Mode Lock Bit
0=Password Protection Mode Enable
1= Password Protection Mode not
enable (Default =1)
Solid Protection Mode Lock Bit
Reserved
0=Solid Protection Mode Enable
1= Solid Protection Mode not enable (Default =1)
x
x
OTP
OTP
OTP
OTP
Notes:
1. While bit 2 or bit 1 has been "0" status, other bits can't be changed any more. If set lock register program mode,
program fail will be set to "1".
2. While bit 2 and bit 1 is "1" status,other bits can be programmed, program fail will be set to "1".
Figure 63. Read Lock Register (RDLR) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Mode 3
Mode 0
SCLK
SI
command
2Dh
Register Out
Register Out
High-Z
SO
7
6
5
4
3
2
1
0
15 14 13 12 11 10
MSB
9
8
7
MSB
Figure 62. Write Lock Register (WRLR) Sequence (SPI Mode)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Mode 3
Mode 0
SCLK
Command
2Ch
Lock Register In
SI
4
15 14
12 11
10
13
8
2
1
0
9
7
6
5
3
MSB
High-Z
SO
P/N: PM1832
Rev. 1.1, August 02, 2016
71
MX66L51235F
9-34-2. SPB Lock Bit (SPBLB)
The Solid Protection Bit Lock Bit (SPBLB) is assigned to control all SPB status. It is unique and volatile.
The default status of this register is determined by Lock Register bit 1 and bit 2 status. Refer to SPB Lock Register
for more SPB Lock information.
When under Solid Protect Mode, there is no software command sequence requested to unlock this bit. To clear the
SPB lock bit, just take the device through a reset or a power-up cycle. When under Password Protection Mode, in
order to prevent modification, the SPB Lock Bit must be set after all SPBs are setting the desired status.
SPB Lock Register
Bit
7-1
Description
Reserved
Bit Status
X
Default
0000000
Type
Volatile
0= SPB bit protected
1= SPB bit unprotected
Solid protected Mode=1
Password Protected Mode=0
0
SPBLK (Lock SPB Bit)
Volatile
Figure 64. SPB Lock Bit Set (SPBLK) Sequence
CS#
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SCLK
Command
A6h
SI
High-Z
SO
Figure 65. Read SPB Lock Register (RDSPBLK) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Mode 3
Mode 0
SCLK
SI
command
A7h
Register Out
Register Out
High-Z
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
P/N: PM1832
Rev. 1.1, August 02, 2016
72
MX66L51235F
9-34-3. Solid Protection Bits
The Solid write Protection bit (SPB) is a nonvolatile bit with the same endurances as the Flash memory. It is
assigned to each sector individually.
When a SPB is set to “1”, the associated sector may be protected, preventing any program or erase operation on
this sector. The SPB bits are set individually by WRSPB command. However, it cannot be cleared individually.
Issuing the ESSPB command will erase all SPB in the same time.
To unprotect a protected sector (corresponding SPB cleared to “0”), the SPB lock bit must be unlocked first. Under
password protection mode (lock register bit 2 set as "0"), a PASSULK command is requested before unlocking SPB
lock bit. However, while the device is under Solid Protection mode (lock register bit 1 set as "0"), just
a reset or a power-up cycle can unlock the SPB lock bit.
After the SPB lock bit unlocked, the SPB status can be changed for desired settings. To lock the Solid Protection
Bits after the modification has finished, the SPB Lock Bit must be set once again.
To verify the programming state of the SPB for a given sector, issuing a RDSPB Command to the device is required.
Note:
1. Once SPB Lock Bit is set, its program or erase command will not be executed and time-out without programming
or erasing the SPB.
SPB Register
Bit
Description
Bit Status
Default
Type
00h= SPB for the sector address unprotected
FFh= SPB for the sector address protected
7 to 0 SPB (Solid protected Bit)
00h
Non-volatile
P/N: PM1832
Rev. 1.1, August 02, 2016
73
MX66L51235F
Figure 66. Read SPB Status (RDSPB) Sequence
CS#
0
1
2
3
4
5
6
7
8
9
37 38 39 40 41 42 43 44 45 46 47
Mode 3
Mode 0
SCLK
Command
E2h
32-Bit Address
A31 A30
A2 A1 A0
SI
MSB
Data Out
High-Z
SO
7
6
5
4
3
2
1
0
MSB
Figure 67. SPB Erase (ESSPB) Sequence
CS#
0
1
2
3
4
5
6
7
Mode 3
SCLK
Mode 0
Command
E4h
SI
High-Z
SO
Figure 68. SPB Program (WRSPB) Sequence
CS#
0
1
2
3
4
5
6
7
8
9
37 38 39
Mode 3
Mode 0
SCLK
Command
E3h
32-Bit Address
A31 A30
A2 A1 A0
SI
MSB
P/N: PM1832
Rev. 1.1, August 02, 2016
74
MX66L51235F
9-34-4. Dynamic Write Protection Bits
The Dynamic Protection features a volatile type protection to each individual sector. It can protect sectors from
unintentional change, and is easy to disable when there are necessary changes.
All DPBs are default as protected (FFh) after reset or upon power up cycle. Via setting up Dynamic Protection bit (DPB)
by write DPB command (WRDPB), user can cancel the Dynamic Protection of associated sector.
The Dynamic Protection only works on those unprotected sectors whose SPBs are cleared. After the DPB state is
cleared to “0”, the sector can be modified if the SPB state is unprotected state.
DPB Register
Bit
Description
Bit Status
Default
Type
00h= DPB for the sector address unprotected
FFh= DPB for the sector address protected
7 to 0 DPB (Dynamic protected Bit)
FFh
Volatile
Figure 69. Read DPB Register (RDDPB) Sequence
CS#
0
1
2
3
4
5
6
7
8
9
37 38 39 40 41 42 43 44 45 46 47
Mode 3
Mode 0
SCLK
Command
E0h
32-Bit Address
A31 A30
A2 A1 A0
SI
MSB
Data Out
High-Z
SO
7
6
5
4
3
2
1
0
MSB
Figure 70. Write DPB Register (WRDPB) Sequence
CS#
0
1
2
3
4
5
6
7
8
9
37 38 39 40 41 42 43 44 45 46 47
Mode 3
Mode 0
SCLK
Command
E1h
Data Byte 1
32-Bit Address
A31 A30
A2 A1 A0
SI
7
6
5
4
3
2
1
0
MSB
MSB
P/N: PM1832
Rev. 1.1, August 02, 2016
75
MX66L51235F
9-34-5. Temporary Un-protect Solid write protect bit (USPB)
Temporary Un-protect Solid write Protect Bit is volatile bit. Software can temporarily unprotect write protect sectors
despite of SPBs' property when DPBs are cleared. While the USPB=1, all the SPBs’ property is masked.
Notes:
1. Upon power up, the USPB status is default protected. The USPB can be unprotected (to “0”) or protected (to “1”)
as often as needed. The hardware reset will reset USPB/DPB to their default values.
2. Please refer to "9-34-7. Sector Protection States Summary Table" for the sector state with the protection status of
DPB/SPB/USPB bits.
9-34-6. Gang Block Lock/Unlock (GBLK/GBULK)
These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is a chip-based
protected or unprotected operation. It can enable or disable all DPB.
The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction.
The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction
→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed.
9-34-7. Sector Protection States Summary Table
Protection Status
Sector State
DPB bit
SPB bit
USPB bit
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Unprotect
Unprotect
Unprotect
Protect
Protect
Protect
Protect
Protect
P/N: PM1832
Rev. 1.1, August 02, 2016
76
MX66L51235F
9-34-8. SPB Password Protection Mode
The security level of Password Protection Method is higher than the Solid protection mode. The 64 bit password is
requested before modify SPB lock bit status. When device is under password protection mode, the SPB lock bit is
cleared to “0”, after a power-up cycle or Reset Command.
A correct password is required for PASSULK command, to unlock the SPB lock bit. Await 2us is necessary
to unlocked the device after valid password is given. After that, the SPB bits are allows to be changed. The
PASSULK command are issued slower than 2 μs every time, to prevent hacker from trying all the 64-bit password
combinations.
To place the device in password protection mode, a few more steps are required. First, prior to entering the
password protection mode, it is necessary to set a 64-bit password to verify it. Password verification is only
allowed during the password programming operation. Second, the password protection mode is then activated by
programming the Password Protection Mode Lock Bit to clear to ”0”. This operation is not reversible. Once the bit is
programmed, it cannot be erased, and the device remains permanently in password protection mode, and the 64-bit
password can neither be retrieved nor reprogrammed. Moreover, all commands to the address where the password
is stored are disabled.
The password is all “1”s when shipped from the factory, it is only capable of programming "0"s under WRPASS
command. All 64-bit password combinations are valid as a password. No special address is required for
programming the password. The password is no longer readable after the Password Protection mode is selected by
programming Lock register bit 2 to "0".
Once sector under protected status, device will ignores the program/erase command, enable status polling and
returns to read mode without contents change. The DPB, SPB and SPB lock bit status of each sector can be
verified by issuing RDDPB, RDSPB, and RDSPBLK commands.
● The unlock operation may fail if the password provided by PASSULK command does not match the previously
entered password. It causes the same result when a programming operation is performed on a protected sector.
The P_FAIL bit is set to 1 and the WIP Bit remains set.
● It is not allowed to execute the PASSULK command faster than every 100us ± 20us. The reason behind it is to
make it impossible to hack into the system by running through all the combinations of a set of 64-bit password (58
million years). To verify if the device has completed the password unlock command and is available to process
a new password command, the Read Status Register command is needed to read the WIP bit. When a valid
password is provided the password unlock command does not insert the 100us delay before returning the WIP
bit to zero.
● It is not feasible to set the SPB Lock bit if the password is missing after the Password Mode is selected.
Password Register (PASS)
Field
Name
Description
Bits
Function Type
Default State
Non-volatile OTP storage of 64 bit password. The
password is no longer readable after the password
protection mode is selected by programming Lock
register bit 2 to zero.
Hidden
Password
63 to 0 PWD
OTP FFFFFFFFFFFFFFFFh
P/N: PM1832
Rev. 1.1, August 02, 2016
77
MX66L51235F
9-35. Program/Erase Suspend/Resume
The device allow the interruption of Sector-Erase, Block-Erase or Page-Program operations and conduct other
operations.
After issue suspend command, the system can determine if the device has entered the Erase-Suspended mode
through Bit2 (PSB) and Bit3 (ESB) of security register. (please refer to "Table 9. Security Register Definition")
The latency time of erase operation :
Suspend to suspend ready timing: 20us.
Resume to another suspend timing: 1ms.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-36. Erase Suspend
Erase suspend allow the interruption of all erase operations. After the device has entered Erase-Suspended mode,
the system can read any sector(s) or Block(s) except those being erased by the suspended erase operation.
Reading the sector or Block being erase suspended is invalid.
After erase suspend, WEL bit will be clear, only read related, resume and reset command can be accepted. (including:
03h, 0Bh, 3Bh, 6Bh, BBh, EBh, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h, 66h, 99h,
00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
If the system issues an Erase Suspend command after the sector erase operation has already begun, the device
will not enter Erase-Suspended mode until 20us time has elapsed.
Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state
of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is
cleared to "0" after erase operation resumes.
9-37. Program Suspend
Program suspend allows the interruption of all program operations. After the device has entered Program-
Suspended mode, the system can read any sector(s) or Block(s) except those being programmed by the suspended
program operation. Reading the sector or Block being program suspended is invalid.
After program suspend, WEL bit will be cleared, only read related, resume and reset command can be accepted.
(including: 03h, 0Bh, 3Bh, 6Bh, BBh, EBh, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h,
66h, 99h, 00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the
state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB
is cleared to "0" after program operation resumes.
P/N: PM1832
Rev. 1.1, August 02, 2016
78
MX66L51235F
Figure 71. Suspend to Read Latency
Program latency : 20us
Erase latency:20us
Suspend Command
Read Command
CS#
[B0]
Figure 72. Resume to Read Latency
TSE/TBE/TPP
Resume Command
Read Command
CS#
[30]
Figure 73. Resume to Suspend Latency
1ms
Suspend
Command
[B0]
Resume Command
CS#
[30]
P/N: PM1832
Rev. 1.1, August 02, 2016
79
MX66L51235F
9-38. Write-Resume
The Write operation is being resumed when Write-Resume instruction issued. ESB or PSB (suspend status bit) in
Status register will be changed back to “0”
The operation of Write-Resume is as follows: CS# drives low → send write resume command cycle (30h) → drive
CS# high. By polling Busy Bit in status register, the internal write operation status could be checked to be completed
or not. The user may also wait the time lag of TSE, TBE, TPP for Sector-erase, Block-erase or Page-programming.
WREN (command "06") is not required to issue before resume. Resume to another suspend operation requires
latency time of 1ms.
Please note that, if "performance enhance mode" is executed during suspend operation, the device can not
be resumed. To restart the write command, disable the "performance enhance mode" is required. After the
"performance enhance mode" is disabled, the write-resume command is effective.
9-39. No Operation (NOP)
The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-40. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command following a Reset (RST)
command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then, which
makes the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. For details, please refer to "Table 13. Reset Timing-
(Other Operation)" for tREADY2.
P/N: PM1832
Rev. 1.1, August 02, 2016
80
MX66L51235F
Figure 74. Software Reset Recovery
Stand-by Mode
66
99
CS#
tReady2
Mode
Note: Refer to "Table 13. Reset Timing-(Other Operation)" for tReady2 data.
Figure 75. Reset Sequence (SPI mode)
tSHSL
CS#
Mode 3
Mode 0
Mode 3
Mode 0
SCLK
SIO0
Command
66h
Command
99h
Figure 76. Reset Sequence (QPI mode)
tSHSL
CS#
MODE 3
MODE 3
MODE 0
MODE 3
MODE 0
SCLK
MODE 0
Command
Command
SIO[3:0]
66h
99h
P/N: PM1832
Rev. 1.1, August 02, 2016
81
MX66L51235F
9-41. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address
bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS#
to high at any time during data out.
SFDP is a JEDEC standard, JESD216.
Figure 77. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
SCLK
Command
5Ah
24 BIT ADDRESS
SI
23 22 21
3
2
1
0
High-Z
SO
CS#
47
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
SCLK
Dummy Cycle
7
6
5
4
3
2
0
1
SI
DATA OUT 2
DATA OUT 1
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
SO
MSB
MSB
MSB
P/N: PM1832
Rev. 1.1, August 02, 2016
82
MX66L51235F
Table 9. Signature and Parameter Identification Data Values
SFDP Table (JESD216) below is for MX66L51235FMI-10G, MX66L51235FZ2I-10G and MX66L51235FXDI-10G
Add (h) DW Add Data (h/b) Data
Description
Comment
(Byte)
(Bit)
(Note1)
(h)
00h
07:00
53h
53h
01h
02h
03h
04h
05h
15:08
23:16
31:24
07:00
15:08
46h
44h
50h
00h
01h
46h
44h
50h
00h
01h
SFDP Signature
Fixed: 50444653h
SFDP Minor Revision Number
SFDP Major Revision Number
Start from 00h
Start from 01h
This number is 0-based. Therefore,
0 indicates 1 parameter header.
Number of Parameter Headers
Unused
06h
07h
08h
09h
0Ah
0Bh
23:16
31:24
07:00
15:08
23:16
31:24
01h
FFh
00h
00h
01h
09h
01h
FFh
00h
00h
01h
09h
00h: it indicates a JEDEC specified
header.
ID number (JEDEC)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Start from 00h
Start from 01h
How many DWORDs in the
Parameter table
0Ch
0Dh
0Eh
07:00
15:08
23:16
30h
00h
00h
30h
00h
00h
First address of JEDEC Flash
Parameter table
Parameter Table Pointer (PTP)
Unused
0Fh
10h
11h
12h
13h
31:24
07:00
15:08
23:16
31:24
FFh
C2h
00h
01h
04h
FFh
C2h
00h
01h
04h
ID number
(Macronix manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
it indicates Macronix manufacturer
ID
Start from 00h
Start from 01h
Parameter Table Length
(in double word)
How many DWORDs in the
Parameter table
14h
15h
16h
07:00
15:08
23:16
60h
00h
00h
60h
00h
00h
First address of Macronix Flash
Parameter table
Parameter Table Pointer (PTP)
Unused
17h
31:24
FFh
FFh
P/N: PM1832
Rev. 1.1, August 02, 2016
83
MX66L51235F
Table 10. Parameter Table (0): JEDEC Flash Parameter Tables
SFDP Table below is for MX66L51235FMI-10G, MX66L51235FZ2I-10G and MX66L51235FXDI-10G
Add (h) DW Add Data (h/b) Data
Description
Comment
(Byte)
(Bit)
(Note1)
(h)
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not support 4KB erase
Block/Sector Erase sizes
Write Granularity
01:00
01b
0: 1Byte, 1: 64Byte or larger
02
03
1b
0b
Write Enable Instruction Required 0: not required
for Writing to Volatile Status
1: required 00h to be written to the
Registers
status register
30h
E5h
0: use 50h opcode,
1: use 06h opcode
Write Enable Opcode Select for
Writing to Volatile Status Registers
Note: If target flash status register is
nonvolatile, then bits 3 and 4 must
be set to 00b.
04
0b
Contains 111b and can never be
changed
Unused
07:05
111b
4KB Erase Opcode
31h
32h
33h
15:08
16
20h
1b
20h
F3h
FFh
(1-1-2) Fast Read (Note2)
0=not support 1=support
Address Bytes Number used in
addressing flash array
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
18:17
19
01b
0b
Double Transfer Rate (DTR)
Clocking
0=not support 1=support
(1-2-2) Fast Read
(1-4-4) Fast Read
(1-1-4) Fast Read
Unused
0=not support 1=support
0=not support 1=support
0=not support 1=support
20
21
1b
1b
22
1b
23
1b
Unused
31:24
FFh
Flash Memory Density
37h:34h 31:00
1FFF FFFFh
(1-4-4) Fast Read Number of Wait 0 0000b: Not supported; 0 0100b: 4
04:00
38h
0 0100b
states (Note3)
0 0110b: 6; 0 1000b: 8
44h
EBh
08h
6Bh
(1-4-4) Fast Read Number of
Mode Bits (Note4)
Mode Bits:
000b: Not supported; 010b: 2 bits
07:05
010b
EBh
(1-4-4) Fast Read Opcode
39h
3Ah
3Bh
15:08
20:16
(1-1-4) Fast Read Number of Wait 0 0000b: Not supported; 0 0100b: 4
0 1000b
states
0 0110b: 6; 0 1000b: 8
(1-1-4) Fast Read Number of
Mode Bits
Mode Bits:
000b: Not supported; 010b: 2 bits
23:21
31:24
000b
6Bh
(1-1-4) Fast Read Opcode
P/N: PM1832
Rev. 1.1, August 02, 2016
84
MX66L51235F
SFDP Table below is for MX66L51235FMI-10G, MX66L51235FZ2I-10G and MX66L51235FXDI-10G
Add (h) DW Add Data (h/b) Data
Description
Comment
(Byte)
(Bit)
(Note1)
(h)
(1-1-2) Fast Read Number of Wait 0 0000b: Not supported; 0 0100b: 4
04:00
0 1000b
states
0 0110b: 6; 0 1000b: 8
3Ch
08h
(1-1-2) Fast Read Number of
Mode Bits
Mode Bits:
000b: Not supported; 010b: 2 bits
07:05
15:08
20:16
000b
3Bh
(1-1-2) Fast Read Opcode
3Dh
3Eh
3Fh
3Bh
04h
BBh
(1-2-2) Fast Read Number of Wait 0 0000b: Not supported; 0 0100b: 4
0 0100b
states
0 0110b: 6; 0 1000b: 8
(1-2-2) Fast Read Number of
Mode Bits
Mode Bits:
000b: Not supported; 010b: 2 bits
23:21
000b
(1-2-2) Fast Read Opcode
(2-2-2) Fast Read
Unused
31:24
00
BBh
0b
0=not support 1=support
0=not support 1=support
03:01
04
111b
1b
40h
FEh
(4-4-4) Fast Read
Unused
07:05
111b
FFh
FFh
Unused
43h:41h 31:08
45h:44h 15:00
FFh
FFh
Unused
(2-2-2) Fast Read Number of Wait 0 0000b: Not supported; 0 0100b: 4
20:16
46h
0 0000b
000b
states
0 0110b: 6; 0 1000b: 8
00h
(2-2-2) Fast Read Number of
Mode Bits
Mode Bits:
000b: Not supported; 010b: 2 bits
23:21
(2-2-2) Fast Read Opcode
Unused
47h
31:24
FFh
FFh
FFh
FFh
49h:48h 15:00
(4-4-4) Fast Read Number of Wait 0 0000b: Not supported; 0 0100b: 4
20:16
4Ah
0 0100b
states
0 0110b: 6; 0 1000b: 8
44h
(4-4-4) Fast Read Number of
Mode Bits
Mode Bits:
000b: Not supported; 010b: 2 bits
23:21
010b
EBh
0Ch
20h
0Fh
52h
10h
D8h
00h
FFh
(4-4-4) Fast Read Opcode
4Bh
4Ch
4Dh
4Eh
4Fh
50h
51h
52h
53h
31:24
07:00
15:08
23:16
31:24
07:00
15:08
23:16
31:24
EBh
0Ch
20h
0Fh
52h
10h
D8h
00h
FFh
Sector/block size = 2^N bytes (Note5)
0Ch: 4KB; 0Fh: 32KB; 10h: 64KB
Sector Type 1 Size
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector/block size = 2^N bytes
00h: N/A; 0Fh: 32KB; 10h: 64KB
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size = 2^N bytes
00h: N/A; 0Fh: 32KB; 10h: 64KB
Sector Type 3 erase Opcode
Sector Type 4 Size
00h: N/A, This sector type doesn't
exist
Sector Type 4 erase Opcode
P/N: PM1832
Rev. 1.1, August 02, 2016
85
MX66L51235F
Table 11. Parameter Table (1): Macronix Flash Parameter Tables
SFDP Table below is for MX66L51235FMI-10G, MX66L51235FZ2I-10G and MX66L51235FXDI-10G
Add (h) DW Add Data (h/b) Data
Description
Comment
2000h=2.000V
2700h=2.700V
3600h=3.600V
(Byte)
(Bit)
(Note1)
(h)
07:00
15:08
00h
36h
00h
36h
Vcc Supply Maximum Voltage
61h:60h
1650h=1.650V, 1750h=1.750V
2250h=2.250V, 2300h=2.300V
2350h=2.350V, 2650h=2.650V
2700h=2.700V
23:16
31:24
00h
27h
00h
27h
Vcc Supply Minimum Voltage
63h:62h
H/W Reset# pin
H/W Hold# pin
0=not support 1=support
0=not support 1=support
0=not support 1=support
0=not support 1=support
00
01
02
03
1b
0b
1b
1b
Deep Power Down Mode
S/W Reset
Reset Enable (66h) should be
issued before Reset Opcode
1001 1001b
(99h)
S/W Reset Opcode
65h:64h 11:04
F99Dh
Program Suspend/Resume
Erase Suspend/Resume
Unused
0=not support 1=support
0=not support 1=support
12
13
14
15
1b
1b
1b
Wrap-Around Read mode
Wrap-Around Read mode Opcode
0=not support 1=support
1b
66h
67h
23:16
C0h
C0h
64h
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
Wrap-Around Read data length
31:24
64h
64h:8B&16B&32B&64B
Individual block lock
0=not support 1=support
00
01
1b
0b
Individual block lock bit
(Volatile/Nonvolatile)
0=Volatile 1=Nonvolatile
1110 0001b
(E1h)
Individual block lock Opcode
09:02
10
Individual block lock Volatile
protect bit default protect status
0=protect 1=unprotect
0b
CB85h
6Bh:68h
Secured OTP
Read Lock
Permanent Lock
Unused
0=not support 1=support
0=not support 1=support
0=not support 1=support
11
12
1b
0b
13
0b
15:14
31:16
11b
FFh
FFh
Unused
FFh
FFh
Unused
6Fh:6Ch 31:00
MX66L51235FMI-10G-SFDP_2016-08-02,SF10
P/N: PM1832
Rev. 1.1, August 02, 2016
86
MX66L51235F
Note 1: h/b is hexadecimal or binary.
Note 2: (x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2),
and (4-4-4)
Note 3: Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4: Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller
if they are specified. (eg,read performance enhance toggling bits)
Note 5: 4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h
Note 6: All unused and undefined area data is blank FFh for SFDP Tables that are defined in Parameter
Identification Header. All other areas beyond defined SFDPTable are reserved by Macronix.
P/N: PM1832
Rev. 1.1, August 02, 2016
87
MX66L51235F
10. RESET
Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at
the following states:
- Standby mode
- All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on.
- 3-byte address mode
If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data
could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to
minimum.
Figure 78. RESET Timing
CS#
tRHSL
SCLK
tRH
tRS
RESET#
tRLRH
tREADY1 / tREADY2
Table 12. Reset Timing-(Power On)
Symbol Parameter
tRHSL Reset# high before CS# low
Min.
10
Typ.
Max.
Unit
us
tRS
tRH
Reset# setup time
Reset# hold time
15
15
ns
ns
tRLRH Reset# low pulse width
10
us
tREADY1 Reset Recovery time
35
us
Table 13. Reset Timing-(Other Operation)
Symbol Parameter
tRHSL Reset# high before CS# low
Min.
10
Typ.
Max.
Unit
us
tRS
tRH
Reset# setup time
Reset# hold time
15
15
ns
ns
tRLRH Reset# low pulse width
10
us
Reset Recovery time (During instruction decoding)
Reset Recovery time (for read operation)
40
35
us
us
Reset Recovery time (for program operation)
tREADY2 Reset Recovery time(for SE4KB operation)
Reset Recovery time (for BE64K/BE32KB operation)
Reset Recovery time (for Chip Erase operation)
Reset Recovery time (for WRSR operation)
310
12
25
100
40
us
ms
ms
ms
ms
P/N: PM1832
Rev. 1.1, August 02, 2016
88
MX66L51235F
11. POWER-ON STATE
The device is at below states when power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct
level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the flash device has no response to any command.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the "power-up timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is
recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response
to any command. The data corruption might occur during the stage while a write, program, erase cycle is in
progress.
P/N: PM1832
Rev. 1.1, August 02, 2016
89
MX66L51235F
12. ELECTRICAL SPECIFICATIONS
Table 14. ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
Industrial grade
-40°C to 85°C
-65°C to 150°C
-0.5V to VCC+0.5V
-0.5V to VCC+0.5V
-0.5V to 4.0V
NOTICE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot Vss to -2.0V and Vcc to +2.0V for periods up to 20ns, see
Figure 79, and Figure 80.
Figure 80. Maximum Positive Overshoot Waveform
Figure 79. Maximum Negative Overshoot Waveform
20ns
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
20ns
Table 15. CAPACITANCE TA = 25°C, f = 1.0 MHz
Symbol Parameter Min.
Typ.
Max.
35
Unit
Conditions
VIN = 0V
CIN
Input Capacitance
pF
pF
COUT Output Capacitance
32
VOUT = 0V
P/N: PM1832
Rev. 1.1, August 02, 2016
90
MX66L51235F
Figure 81. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Input timing reference level
Output timing reference level
0.8VCC
0.2VCC
0.7VCC
0.8V
AC
Measurement
Level
0.5VCC
Note: Input pulse rise and fall time are <5ns
Figure 82. OUTPUT LOADING
25K ohm
+1.8V
DEVICE UNDER
TEST
CL
25K ohm
CL=30pF Including jig capacitance
P/N: PM1832
Rev. 1.1, August 02, 2016
91
MX66L51235F
Table 16. DC CHARACTERISTICS (Temperature = -40 C to 85 C, VCC = 2.7V - 3.6V)
°
°
Symbol Parameter
Notes
Min.
Typ.
Max.
Units Test Conditions
VCC = VCC Max,
uA
ILI
Input Load Current
Output Leakage Current
1
±4
VIN = VCC or GND
VCC = VCC Max,
uA
ILO
1
1
±4
100
40
VOUT = VCC or GND
VIN = VCC or GND,
CS# = VCC
ISB1 VCC Standby Current
20
4
uA
Deep Power-down
Current
VIN = VCC or GND,
CS# = VCC
ISB2
uA
f=104MHz, (4 x I/O read)
mA SCLK=0.1VCC/0.9VCC,
SO=Open
40
30
ICC1 VCC Read
1
1
20
f=84MHz,
mA SCLK=0.1VCC/0.9VCC,
SO=Open
VCC Program Current
Program in Progress,
CS# = VCC
ICC2
(PP)
20
20
40
30
mA
VCC Write Status
ICC3
Program status register in
mA
Register (WRSR) Current
progress, CS#=VCC
VCC Sector/Block (32K,
ICC4 64K) Erase Current
(SE/BE/BE32K)
Erase in Progress,
CS#=VCC
1
1
20
30
40
mA
VCC Chip Erase Current
Erase in Progress,
CS#=VCC
ICC5
(CE)
50
mA
VIL
VIH
VOL
Input Low Voltage
Input High Voltage
Output Low Voltage
-0.5
0.8
V
0.7VCC
VCC+0.4
V
V
V
0.2
IOL = 100uA
IOH = -100uA
VOH Output High Voltage
Notes:
VCC-0.2
1. Typical values at VCC = 3.3V, T = 25 C. These currents are valid for all product versions (package and speeds).
°
2. Typical value is calculated by simulation.
P/N: PM1832
Rev. 1.1, August 02, 2016
92
MX66L51235F
Table 17. AC CHARACTERISTICS (Temperature = -40 C to 85 C, VCC = 2.7V - 3.6V)
°
°
Symbol Alt. Parameter
Min.
Typ.
Max. Unit
fSCLK
fRSCLK
fC Clock Frequency for all commands (except Read)
fR Clock Frequency for READ instructions
fT Clock Frequency for 2READ instructions
fQ Clock Frequency for 4READ instructions
D.C.
133
50
MHz
MHz
MHz
MHz
ns
84(7)
84(7)
fTSCLK
tCH(1)
Others (fSCLK)
3.3
9
tCLH Clock High Time
Normal Read (fRSCLK)
ns
Others (fSCLK)
Normal Read (fRSCLK)
3.3
9
0.1
0.1
3
ns
ns
V/ns
V/ns
ns
tCL(1)
tCLL Clock Low Time
tCLCH(2)
tCHCL(2)
Clock Rise Time (peak to peak)
Clock Fall Time (peak to peak)
tSLCH tCSS CS# Active Setup Time (relative to SCLK)
tCHSL CS# Not Active Hold Time (relative to SCLK)
tDVCH tDSU Data In Setup Time
3
2
ns
ns
tCHDX
tCHSH
tSHCH
tDH Data In Hold Time
2
3
3
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
CS# Active Hold Time (relative to SCLK)
CS# Not Active Setup Time (relative to SCLK)
Read
tSHSL(3) tCSH CS# Deselect Time
Write/Erase/Program
30
tSHQZ(2) tDIS Output Disable Time
8
9
7
Loading: 30pF
Loading: 15pF
Clock Low to Output Valid
tCLQV
tV
Loading: 30pF/15pF
tHO Output Hold Time
Write Protect Setup Time
Write Protect Hold Time
tCLQX
tWHSL(3)
tSHWL(3)
tDP(2)
1
20
100
CS# High to Deep Power-down Mode
CS# High to Standby Mode without Electronic Signature
Read
CS# High to Standby Mode with Electronic Signature Read
Write Status/Configuration Register Cycle Time
Write Extended Address Register
Byte-Program
10
30
tRES1(2)
us
tRES2(2)
tW
tWREAW
tBP
30
40
us
ms
ns
40
16
30
us
tPP
Page Program Cycle Time
0.5
1.5
ms
0.008+
tPP(5)
Page Program Cycle Time (n bytes)
(nx0.004)
1.5
ms
(6)
tSE
tBE32
tBE
Sector Erase Cycle Time
30
120
650
650
300
ms
ms
ms
s
Block Erase (32KB) Cycle Time
Block Erase (64KB) Cycle Time
Chip Erase Cycle Time
150
280
110
tCE
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Typical values given for TA=25 C. Not 100% tested.
°
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Test condition is shown as Figure 81 and Figure 82.
5. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to
program the whole 256 bytes or only a few bytes between 1~256 bytes.
6. “n”=how many bytes to program. In the formula, while n=1, byte program time=12us.
7. By default dummy cycle value. Please refer to the "Table 1. Read performance Comparison".
P/N: PM1832
Rev. 1.1, August 02, 2016
93
MX66L51235F
13. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in Figure 83 and Figure 84 are for the supply voltages and the control signals at device power-
up and power-down. If the timing in the figures is ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 83. AC Timing at Device Power-Up
VCC(min)
VCC
GND
tVR
tSHSL
CS#
tSHCH
tSLCH
tCHSL
tCHSH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
MSB IN
LSB IN
SI
High Impedance
SO
Symbol
Parameter
Notes
Min.
Max.
Unit
tVR
VCC Rise Time
1
500000
us/V
Notes:
1. Sampled, not 100% tested.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
Table 17. AC CHARACTERISTICS.
P/N: PM1832
Rev. 1.1, August 02, 2016
94
MX66L51235F
Figure 84. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
Figure 85. Power-up Timing
V
CC
V
(max)
CC
Chip Selection is Not Allowed
V
(min)
CC
Device is fully accessible
tVSL
V
WI
time
P/N: PM1832
Rev. 1.1, August 02, 2016
95
MX66L51235F
Figure 86. Power Up/Down and Voltage Drop
When powering down the device, VCC must drop below VPWD for at least tPWD to ensure the device will initialize
correctly during power up. Please refer to "Figure 86. Power Up/Down and Voltage Drop" and "Table 18. Power-Up/
Down Voltage and Timing" below for more details.
VCC
VCC (max.)
Chip Select is not allowed
VCC (min.)
tVSL
Full Device
Access
Allowed
(max.)
V
PWD
tPWD
Time
Table 18. Power-Up/Down Voltage and Timing
Symbol Parameter
Min.
Max.
Unit
us
V
tVSL
VWI
VPWD
VCC(min.) to device operation
Command Inhibit Voltage
800
2.3
2.5
0.9
VCC voltage needed to below VPWD for ensuring initialization will occur
V
tPWD The minimum duration for ensuring initialization will occur
VCC VCCPower Supply
300
2.7
us
V
3.6
Note: These parameters are characterized only.
13-1. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
P/N: PM1832
Rev. 1.1, August 02, 2016
96
MX66L51235F
14. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Typ. (1)
Max. (2)
40
Unit
ms
ms
s
Write Status Register Cycle Time
Sector Erase Cycle Time (4KB)
Block Erase Cycle Time (32KB)
Block Erase Cycle Time (64KB)
Chip Erase Cycle Time
30
0.15
0.28
110
120
0.65
0.65
300
30
s
s
Byte Program Time (via page program command)
Page Program Time
16
us
0.15
100,000
1.5
ms
cycles
Erase/Program Cycle
Notes:
1. Typical program and erase time assumes the following conditions: 25 C, 3.3V, and all zero pattern.
°
2. Under worst conditions of 85 C and 2.7V.
°
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming
command.
4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=3.3V, and 100K
cycle with 90% confidence level.
15. DATA RETENTION
Parameter
Condition
Min.
Max.
Unit
Data retention
55˚C
20
years
16. LATCH-UP CHARACTERISTICS
Min.
Max.
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
-1.0V
-1.0V
2 VCCmax
VCC + 1.0V
+100mA
-100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N: PM1832
Rev. 1.1, August 02, 2016
97
MX66L51235F
17. ORDERING INFORMATION
PART NO.
CLOCK (MHz) TEMPERATURE
PACKAGE
Remark
MX66L51235FMI-10G
MX66L51235FZ2I-10G
MX66L51235FXDI-10G
104
104
104
-40 C to 85 C
16-SOP (300mil)
8-WSON (8x6mm)
°
°
-40 C to 85 C
°
°
24-Ball BGA
-40 C to 85 C
°
°
(5x5 ball array)
P/N: PM1832
Rev. 1.1, August 02, 2016
98
MX66L51235F
18. PART NAME DESCRIPTION
MX 66 51235F Z2
L
I
10 G
OPTION:
G: RoHS Compliant & Halogen-free
SPEED:
10: 104MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M: 16-SOP (300mil)
Z2: 8-WSON (8x6mm)
XD: 24-Ball BGA (5x5 ball array)
DENSITY & MODE:
51235F: 512Mb
TYPE:
L: 3V
DEVICE:
66: Serial NOR Flash
P/N: PM1832
Rev. 1.1, August 02, 2016
99
MX66L51235F
19. PACKAGE INFORMATION
P/N: PM1832
Rev. 1.1, August 02, 2016
100
MX66L51235F
P/N: PM1832
Rev. 1.1, August 02, 2016
101
MX66L51235F
P/N: PM1832
Rev. 1.1, August 02, 2016
102
MX66L51235F
20. REVISION HISTORY
Revision No. Description
Page
Date
1.0
1. Corrected content error
P5,7,8,24,32,33, JUN/06/2013
39,41,43,58-59,65,
P
71,76,78,80-81,93,96
P
2. Removed "Advanced Information"
3. Added USPB information.
4. Modified Reset timing definition.
5. Added Power Up/Down and Voltage Drop information
6. Added note on WP# setup
P4
P73,79
P84,91
P99
P40
7. Modified maximum CIN and COUT.
P93
"Figure 81. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL"
8. Modified
. P94
P92-93
1.1
1. Updated parameters for DC/AC Characteristics
2. Updated Erase and Programming Performance
3. Content correction
AUG/02/2016
P97
P51-52,62,65,
67,70-77,96
P90
P102
P100
4. Modified VCC to Ground Potential parameter
5. Updated 24-Ball BGA (5x5 ball array) package outline
6. Updated 16-pin SOP (300mil) package outline
7. Updated 8-land WSON (8x6mm) package outline
8. Added Key features
P101
P1
9. Updated tVR descriptions
P94,96
P46
P52-54
P87
10. Revised "9-16. Quad Read Mode (QREAD)" descriptions
11. Revised Performance Enhance Mode Reset descriptions
12. Revised Note 6 of SFDP Tables
P/N: PM1832
Rev. 1.1, August 02, 2016
103
MX66L51235F
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104
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