16F [NAINA]
16AMP SILICON POWER DIODE; 16AMP硅功率二极管
| 型号： | 16F |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | 16AMP SILICON POWER DIODE |
| 文件： | 总1页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
16F/16FR
NAINA
16AMP SILICON POWER DIODE
DO-4
FEATURES
•
•
•
•
All Diffused Series
16F/ 16FR
A
Available in Normal & Reverse Polarity
Industrial Grade
Available In Avalanche Characteristic
4
*
Available In UNF and metric thread
C
A
ELECTRICALSPECIFICATIONS
16F/FR
16A
C
F
19
IF(A)
VFM
Maximum Average Forward
FR
10
0
Current Te=150 C
Maximum peak forward
1.2V
300A
80A
11A/F
voltage drop @ Rated IF(AV)
11.5
IFSMMaximum peak one cycle
M6 x 1.0
(non-rep) surge current 10msec
IFRMMaximum peak one cycle (non
-rep) surge current 10msec
Maximum I2t rating (non-rep.)
for 5 to 10 m sec.
I2t
450A2Sec
THERMALMECHANICAL SPECIFICATIONS
θJC
TJ
Tstg
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
1.5oC/W
-65oC to 150oC
-65oC to 150oC
Mounting torque (non-lubricated threads)
Approx, weight
0.14 M-Kg min, 0.17 M-kg max
7 gms.
W
ELECTRICALRATINGS
TYPE
VRRM
16F/16FR
10
100
70
20
40
60
80
100
120
140
160
Max. repetitive peak
voltage (v)
200 400 600
140 280 420
800 1000
1200 1400 1600
VR(RMS) Max. R.M.S. reverse voltage (V)
560
700
840
980 1120
VR
Max. D.C. Blocking Voltage (V)
Recommended R.M.S. working
Voltage(v)
100
40
200 400
60
800 1000
1200 1400 1600
80 160 240
320
100
400
100
480
100
560
100
640
100
IR(AV)
Max. Average reverse leakage
100
100 100 100
0
current @ VRMM Tc 25 C uA
NAINA SEMICONDUCTOR LTD,
D-95 SECTOR63 NOIDA (INDIA).
e-mail :sales@nainasemi.com, web site: www.nainasemi.com
相关型号：
16F(R)80
Rectifier Diode, 1 Phase, 1 Element, 16A, 800V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN
VISHAY
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