200NS [NAINA]
Standard Recovery Diodes (Stud and Flat Base Type); 标准恢复二极管（梭哈和平底型）
| 型号： | 200NS |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | Standard Recovery Diodes (Stud and Flat Base Type) |
| 文件： | 总2页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
200NS(R)
Naina Semicoonductor Ltd.
Standard Recoveery Diodes (Stud and Flat Base Type)
Features
•
•
•
•
Diffused Series
Industrial grade
Available in Normal and Reverse polarity
Metric and UNF thread type
Electrical Specifications (TE = 250C, unless
otherwise noted)
Symbol
Parameters
Values Units
Maximum avg. forward current @ TE
150OC
==
IF(AV)
200
1.4
A
V
A
A
Maximum peak forward voltage drop
@ rated IF(AV)
VFM
IFSM
IFRM
I2t
Maximum peak one cycle (non-rep)
surge current @ 10 msec
4000
11000
Maximum peak repetitive surge
current
Maximum I2t rating (non-rep) for 5 to
92500 A2sec
10 msec
DO-205AA (DO-8)
Electrical Ratings (TE = 250C, unless otherwise noted)
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VR(RMS),
V
Maximum
IR(AV), Maximum
avg. reverse
leakage current
(µA)
VR, Maximum
DC blocking
voltage
Recommended RMS
RMS reverse
voltage
(V)
Type
number
Voltage
Code
working voltag
(V)
e
(V)
10
20
100
200
70
140
280
420
560
700
840
980
1120
100
200
40
80
40
400
400
160
240
320
400
480
560
640
60
600
600
200NS(R)
80
800
800
200
100
120
140
160
1000
1200
1400
1600
1000
1200
1400
1600
200NS(R)
Naina Semiconductor Ltd.
Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted)
Symbol
Rth(JC)
TJ
Parameters
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Values
0.23
Units
0C/W
0C
-65 to 150
-65 to 200
Tstg
0C
Mounting torque (non-lubricated threads)
Approximate allowable weight
2.0 (min) – 3.0 (max)
150
W
G
ALL DIMENSIONS IN MM
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