40HF [NAINA]
SILICON POWER DIODES; 硅功率二极管
| 型号： | 40HF |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | SILICON POWER DIODES |
| 文件： | 总1页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
40HF/40HFR
NAINA
SILICON POWER DIODES
DO-5
FEATURES
•
•
•
•
All Diffused Series
40 HF/ HFR
7
Available in Normal & Reverse Polarity
Industrial Grade
POLARITY
Ø 4.0
A
C
27
12
Available In Avalanche Characteristic
* Available in metric and UNF thread
ELECTRICALSPECIFICATIONS
C
A
Reverse
Normal
17 A/F
11.5
M8 x 1.25
16
F(AV)
I
Maximum Average Forward
40A
1.2V
Ø 8.0
0
Current Te=140 C
VFM
IFRM
IFRM
Maximum peak forward
voltage drop @ Rated IF(AV)
Maximum peak one cycle
(non-rep) surge current 10 m sec
Maximum peak repetitive
surge current
POLARITY
A
C
A
500 A
200 A
C
Reverse
Normal
32
12
17 A/F
2
2
2
1200A Sec
I tMaximum I t rating (non-rep.)
for 5 to 10 m sec
11.5
M 8 x 1.25
THERMALMECHANICALSPECIFICATIONS
θJC
Tj
Maximum thermal resistance Junction to case
10C/W
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
-650C to 1500C
-650C to 2000C
0.4 M-kg min,
0.6 M-kg max
13.5 & 30 gms.
Tstg
W
ELECTRICALRATINGS
TYPE
VRRM
40HF/HFR
Max. repetitive peak reverse
voltage (v)
10
100
20
40
60
80
100
120
140
160
200 400 600
800 1000
1200 1400 1600
VR(RMS)
VR
Max. R.M.S. reverse voltage (V) 70
140 280 420
200 400 600
560
700
840
980 1120
Max. D.C. Blocking Voltage (V)
100
800 1000
1200 1400 1600
Recommended R.M.S. working
Voltage(v)
40
80
160 240
320
200
400
200
480
200
560
200
640
200
IR(AV)
Max. Average reverse leakage
200
200 200 200
current @ VRMM Tc 250C uA
NAINA SEMICONDUCTOR LTD
D95,SECTOR 63,NOIDA(INDIA)
e-mail: sales@nainasemi.com, web site :www.nainasemi.com
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