MBR35100R [NAINA]
Schottky Power Diode, 35A; 肖特基功率二极管， 35A
| 型号： | MBR35100R |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | Schottky Power Diode, 35A |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR3545 thru
MBR35100R
Naina Semiconductor Ltd.
Schottky Power Diode, 35A
Features
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•
•
•
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Fast Switching
Low forward voltage drop
High surge capability
High efficiency, low power loss
Normal and Reverse polarity
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Test
Conditions
Parameter
Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
VRRM
VRMS
VDC
IF
45
32
45
35
60
42
60
35
80
57
80
35
100
70
V
V
V
A
DC blocking voltage
100
35
Continuous forward current
TC ≤ 110oC
TC = 25oC
Surge non-repetitive forward
current, half-sine wave
IFSM
VF
600
0.68
1.5
600
0.75
1.5
600
0.84
1.5
600
0.84
1.5
A
V
IF = 35 A
TJ = 25oC
Forward voltage
VR = 20V,
TJ = 25oC
Reverse current
IR
mA
VR = 20V,
TJ = 125oC
25
25
25
25
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
Maximum thermal resistance, junction to
case
oC/
W
oC
Rth(JC)
1.5
Operating junction temperature range
Storage temperature
TJ
Tstg
F
-55 to 150
-55 to 175
2.0
oC
Mounting torque (non-lubricated threads)
Approximate allowable weight
Nm
g
W
5.0
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
MBR3545 thru
MBR35100R
Naina Semiconductor Ltd.
Package Outline
ALL DIMENSIONS IN MM
2
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
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