MBR40040CT [NAINA]
Silicon Schottky Diode, 400A; 硅肖特基二极管， 400A
| 型号： | MBR40040CT |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | Silicon Schottky Diode, 400A |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR40020CT thru
MBR40040CTR
Naina Semiconductor Ltd.
Silicon Schottky Diode, 400A
Features
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•
•
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Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
MBR40020CT MBR40030CT MBR40035CT MBR40040CT
Parameter
Symbol
Conditions
Units
(R)
(R)
(R)
(R)
Repetitive peak
reverse voltage
VRRM
20
30
35
40
V
RMS reverse voltage
DC blocking voltage
VRMS
VDC
14
20
21
30
25
35
28
40
V
V
Average forward
current
IF(AV)
TC ≤ 125 oC
400
400
400
400
A
Non-repetitive
forward surge
current, half sine-
wave
TC = 25 oC
tp = 8.3 ms
IFSM
3000
3000
3000
3000
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
MBR40020CT MBR40030CT MBR40035CT MBR40040CT
Parameter
Symbol
Conditions
Units
(R)
(R)
(R)
(R)
IF = 200 A
TJ = 25 oC
DC forward voltage
VF
0.68
0.68
0.68
0.68
V
VR = 20 V
TJ = 25 oC
5
5
5
5
DC reverse current
IR
mA
VR = 20 V
TJ = 125oC
200
200
200
200
Thermal Characteristics (TJ = 25oC unless otherwise specified)
MBR40020CT MBR40030CT MBR40035CT MBR40040CT
Parameter
Symbol
Units
oC/W
oC
(R)
(R)
(R)
(R)
Thermal resistance
junction to case
RthJ-C
0.35
0.35
0.35
0.35
Operating, storage
temperature range
- 40 to +175
- 40 to +175
- 40 to +175
- 40 to +175
TJ , Tstg
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
MBR40020CT thru
MBR40040CTR
Naina Semiconductor Ltd.
Package Outline
ALL DIMENSIONS IN MM
Ordering Table
MBR
400
20
CT
1
2
3
4
1 – Device Type
MBR = Schottky Barrier Diode Module
>
2 – Current Rating = IF(AV)
3 – Voltage = VRRM
4 – Polarity
>
>
CT = Normal (Cathode to Base)
CTR = Reverse (Anode to Base)
2
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
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