N02M083WL1A [NANOAMP]
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit; 2MB超低功耗异步医疗CMOS SRAM 256Kx8位
| 型号： | N02M083WL1A |
| 厂家： | 
NANOAMP SOLUTIONS, INC. |
| 描述： | 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit |
| 文件： | 总9页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02M083WL1A
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
Features
The N02M083WL1A is an integrated memory
device intended for non life-support (Class 1 or 2)
medical applications. This device comprises a 2
Mbit Static Random Access Memory organized as
262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Low standby current
3µA maximum at 3.6V
• Very low operating current
2 mA at 3.6V and 1Mhz (Typical)
medical users. The base design is the same as
NanoAmp’s N02M0818L2A, which has further
reliability processing for life-support (Class 3)
medical applications. The device operates with two
chip enable (CE1 and CE2) controls and output
enable (OE) to allow for easy memory expansion.
The N02M083WL1A is optimal for various
• Very low Page Mode operating current
0.5mA at 3.6V and 1Mhz (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
applications where low-power is critical such as
battery backup and hand-held devices. The device
can operate over a very wide temperature range of
• Automatic power down to standby mode
• TTL compatible three-state output driver
o
o
-40 C to +85 C and is available in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Product Family
Standby
Current
Operating
Current (Icc),
Max
Operating
Power
Part Number
Package Type
Speed
Temperature Supply (Vcc)
(ISB), Max
N02M083WL1AN 32 - STSOP I
N02M083WL1AD Known Good Die
-40oC to +85oC
2.3V - 3.6V 70ns @ 2.3V
3.0 µA
2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
Pin Function
OE
32
A11
A9
1
A10
31
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
2
CE1
30
A8
3
I/O7
29
A13
WE
CE2
A15
VCC
4
I/O6
28
5
I/O5
27
6
I/O4
26
7
N02M083WL1A
STSOP
I/O3
25
8
VSS
24
9
A17
A16
A14
A12
A7
10
11
12
13
14
15
16
23
22
21
20
19
18
17
I/O2
I/O1
I/O0
A0
Power
Ground
A1
A6
A2
A5
A3
A4
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NanoAmp Solutions, Inc.
Functional Block Diagram
N02M083WL1A
Word
Address
Inputs
Address
Decode
Logic
A - A
0
3
Input/
Output
Mux
Page
16K Page
x 16 word
x 8 bit
Address
Inputs
Address
A - A
Decode
Logic
4
17
and
I/O - I/O
0
7
RAM Array
Buffers
CE1
CE2
WE
OE
Control
Logic
Functional Description
I/O0 - I/O7
CE1
CE2
WE
OE
MODE
POWER
Standby1
Standby1
Write2
H
X
L
L
L
X
L
X
X
L
X
X
X2
L
H
High Z
High Z
Standby
Standby
Active
H
H
H
Data In
Data Out
High Z
H
H
Active
Active
Read
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
1
Capacitance
Item
Symbol
CIN
Test Condition
Min
Max
8
Unit
pF
VIN = 0V, f = 1 MHz, TA = 25oC
VIN = 0V, f = 1 MHz, TA = 25oC
Input Capacitance
I/O Capacitance
CI/O
8
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc.
N02M083WL1A
1
Absolute Maximum Ratings
Item
Symbol
VIN,OUT
VCC
Rating
–0.3 to VCC+0.3
–0.3 to 4.5
500
Unit
V
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
V
PD
mW
oC
oC
oC
TSTG
Storage Temperature
–40 to 125
TA
Operating Temperature
-40 to +85
240oC, 10sec(Lead only)
TSOLDER
Soldering Temperature and Time
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Typ1
Item
Symbol
Test Conditions
Min.
Max
Unit
VCC
VDR
VIH
VIL
Supply Voltage
Data Retention Voltage
Input High Voltage
2.3
1.8
VCC-0.6
3.6
V
V
Chip Disabled3
VCC+0.3
0.6
V
Input Low Voltage
–0.3
V
VOH
VOL
ILI
IOH = 0.2mA
IOL = -0.2mA
VCC–0.2
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V
0.2
0.5
0.5
V
VIN = 0 to VCC
µA
µA
ILO
OE = VIH or Chip Disabled
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
ICC1
ICC2
1.5
2.0
mA
mA
@ 1 µs Cycle Time2
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
10.0
12.0
@ 70 ns Cycle Time2
Page Mode Operating Supply Current
@ 70 ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
ICC3
4.0
2.0
mA
VIN = VCC or 0V
Chip Disabled
Maximum Standby Current3
ISB1
20.0
10.0
µA
µA
tA= 85oC, VCC = 2.3 V
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
Maximum Data Retention Current3
IDR
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23207-01 11/01/02
3
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
Power Savings with Page Mode Operation (WE = V )
N02M083WL1A
IH
Page Address (A4 - A17)
Word Address (A0 - A3)
Open page
...
Word 16
Word 1
Word 2
CE1
CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23207-01 11/01/02
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
Timing Test Conditions
N02M083WL1A
Item
0.1VCC to 0.9 VCC
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
Operating Temperature
Timing
2.3 - 3.6 V
2.7 - 3.6 V
Item
Symbol
Units
Min.
Max.
Min.
Max.
tRC
tAA
Read Cycle Time
100
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
100
100
35
70
70
35
tCO
tOE
tLZ
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
15
10
0
10
5
tOLZ
tHZ
30
30
0
20
20
tOHZ
tOH
tWC
tCW
tAW
tWP
tAS
0
0
15
100
70
70
50
0
10
70
50
50
40
0
Chip Enable to End of Write
Address Valid to End of Write
Write Pulse Width
Address Setup Time
tWR
tWHZ
tDW
tDH
tOW
Write Recovery Time
0
0
Write to High-Z Output
30
20
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
50
0
40
0
10
5
ns
Stock No. 23207-01 11/01/02
5
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N02M083WL1A
Timing of Read Cycle (CE1 = OE = V , WE = CE2 = V )
IL
IH
t
RC
Address
Data Out
t
AA
t
OH
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=V )
IH
t
RC
Address
t
AA
t
HZ
CE1
CE2
t
CO
t
LZ
t
OHZ
t
OE
OE
t
OLZ
High-Z
Data Valid
Data Out
Stock No. 23207-01 11/01/02
6
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N02M083WL1A
Timing Waveform of Write Cycle (WE control)
t
WC
Address
CE1
t
WR
t
AW
t
CW
CE2
WE
t
t
AS
WP
t
t
DH
DW
High-Z
Data Valid
Data In
t
WHZ
t
OW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
t
WR
AW
CE1
t
CW
t
(for CE2 Control, use
inverted signal)
AS
t
t
WP
WE
t
t
DH
DW
Data Valid
Data In
t
LZ
WHZ
High-Z
Data Out
Stock No. 23207-01 11/01/02
7
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N02M083WL1A
32-Lead STSOP-I Package (N32)
11.80±0.10
0.50mm REF
8.0±0.10
0.27
0.17
13.40±0.20
SEE DETAIL B
DETAIL B
1.10±0.15
o
o
0 -8
0.20
0.00
0.80mm REF
Note:
1. All dimensions in millimeters
2. Package dimensions exclude molding flash
Stock No. 23207-01 11/01/02
8
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
Ordering Information
N02M083WL1A
N02M083WL1AX-XX X
I = Industrial, -40°C to 85°C
Temperature
70 = 70ns @ 2.7 volts
Performance
N = 32-pin STSOP I
D = Known good die (KGD)
Package Type
Revision History
Revision #
Date
11/01/02
Change Description
Initial Release
01
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23207-01 11/01/02
9
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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