2SA1376A-L-A
更新时间：2024-09-18 17:49:50
品牌：NEC
描述：Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN
概述
规格参数
数据手册2SA1376A-L-A 概述
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN 小信号双极晶体管
2SA1376A-L-A 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 包装说明： | SC-43B, 3 PIN | Reach Compliance Code： | compliant |
| 风险等级： | 5.84 | 最大集电极电流 (IC)： | 0.1 A |
| 集电极-发射极最大电压： | 200 V | 配置： | SINGLE |
| 最小直流电流增益 (hFE)： | 135 | JEDEC-95代码： | TO-92 |
| JESD-30 代码： | O-PBCY-T3 | 元件数量： | 1 |
| 端子数量： | 3 | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | ROUND | 封装形式： | CYLINDRICAL |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | PNP |
| 认证状态： | Not Qualified | 表面贴装： | NO |
| 端子形式： | THROUGH-HOLE | 端子位置： | BOTTOM |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | AMPLIFIER |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 120 MHz |
| Base Number Matches： | 1 |
2SA1376A-L-A 数据手册
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PDF下载DATA SHEET
SILICON TRANSISTORS
2SA1376, 1376A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH VOLTAGE AMPLIFIERS
FEATURES
PACKAGE DRAWING (UNIT: mm)
•
High voltage
VCEO: −180 V / −200 V
(2SA1376/2SA1376A)
Excellent hFE linearity
•
•
High total power dissipation in small dimension:
PT: 0.75 W
•
Complementary transistor with 2SC3478 and 2SC3478A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
2SA1376/2SA1376A
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT
Ratings
−200
−180/−200
−5
−100
−200
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
W
0.75
°C
°C
Tj
150
−55 to +150
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2SA1376/2SA1376A
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −200 V, IE = 0
VEB = −5 V, IC = 0
VCE = −10 V, IC = −10 mA
VCE = −10 V, IC = −100 mA
VCE = −10 V, IC = −10 mA
IC = −50 mA, IB = −5 mA
IC = −50 mA, IB = −5 mA
VCB = −30 V, IE = 0, f = 1.0 MHz
VCE = −10 V, IE = 10 mA
MIN.
TYP.
MAX.
−100
−100
Unit
nA
nA
−
IEBO
hFE1 **
hFE2 **
VBE **
VCE(sat) **
VBE(sat) **
Cob
135
81
300/200 600/400
−
DC current gain
−600
−650
−0.2
−0.8
3.5
−700
−0.3
−1.2
4.0
DC base voltage
mV
V
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Turn-on time
V
pF
MHz
µs
µs
fT
80
120
0.16
1.5
IC = −10 mA, IB1 = −IB2 = −1 mA,
VCC = –10 V
ton
Turn-off time
toff
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16194EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SA1376, 1376A
hFE CLASSIFICATION
Marking
hFE1
L
K
U
135 to 270
200 to 400
300 to 600
(The U rank is not available for the 2SA1376A.)
2
Data Sheet D16194EJ1V0DS
2SA1376, 1376A
TYPICAL CHARACTERISTICS (Ta = 25°C)
3
Data Sheet D16194EJ1V0DS
2SA1376, 1376A
4
Data Sheet D16194EJ1V0DS
2SA1376, 1376A
[MEMO|]
5
Data Sheet D16194EJ1V0DS
2SA1376, 1376A
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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redundancy, fire-containment, and anti-failure features.
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(Note)
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M8E 00. 4
2SA1376A-L-A 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SA1376A-U | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN | 获取价格 |
|
| 2SA1376A-U-A | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN | 获取价格 |
|
| 2SA1376AK | ETC | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-92 | 获取价格 |
|
| 2SA1376AL | ETC | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-92 | 获取价格 |
|
| 2SA1376AL-T | RENESAS | 2SA1376AL-T | 获取价格 |
|
| 2SA1376K | ETC | TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 100MA I(C) | TO-92 | 获取价格 |
|
| 2SA1376K-T | RENESAS | 2SA1376K-T | 获取价格 |
|
| 2SA1376L | ETC | TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 100MA I(C) | TO-92 | 获取价格 |
|
| 2SA1376L-A | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN | 获取价格 |
|
| 2SA1376L-T | RENESAS | 2SA1376L-T | 获取价格 |
|
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