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2SC3583 [NEC]

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR; 微波低噪声放大器NPN硅外延型晶体管

2SC3583


元器件型号：	2SC3583
生产厂家：	NEC
描述和应用：	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延型晶体管晶体放大器晶体管微波光电二极管
PDF文件：	总8页 (文件大小：105K)
下载文档：	下载PDF数据表文档文件
型号参数：2SC3583参数

2SC3583(NE68133)

Discrete

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18 ETC

2SC3583-A

暂无描述

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0 NEC

2SC3583-A

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

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0 NEC

2SC3583Q

BJT

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50 NEC

2SC3583-Q

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

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0 NEC

2SC3583-Q

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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0 RENESAS

2SC3583-Q-A

暂无描述

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0 NEC

2SC3583-Q-A

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

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0 NEC

2SC3583R

BJT

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31 NEC

2SC3583-R

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

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0 NEC

2SC3583-R

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

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0 NEC

2SC3583R33

BJT

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21 NEC

2SC3583-R33

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

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0 NEC

2SC3583-R33

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

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0 NEC

2SC3583R34

BJT

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31 NEC

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