2SC3622-L [NEC]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN;
| 型号： | 2SC3622-L |
| 厂家： | 
NEC |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN |
| 文件： | 总6页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTORS
2SC3622, 3622A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES
PACKAGE DRAWING (UNIT: mm)
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High hFE:
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA
Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
High VEBO:
VEBO: 12 V (2SC3622)
VEBO: 15 V (2SC3622A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Ratings
2SC3622 2SC3622A
Parameter
Symbol
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC(DC)
PT
60
50
V
V
12
15
V
150
250
150
mA
mW
°C
°C
Tj
−55 to +150
Tstg
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 50 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
nA
−
IEBO
VEB = 10 V, IC = 0
100
hFE1 *
hFE2 *
VBE *
VCE(sat) *
VBE(sat) *
fT
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 100 mA
VCE = 5.0 V, IC = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 50 mA, IB = 5.0 mA
VCE = 5.0 V, IE = −10 mA
1000
200
1800
350
560
0.07
0.8
3200
DC current gain
DC base voltage
mV
V
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
0.30
1.2
V
250
3.0
MHz
pF
µs
Cob
VCB = 5 V, IE = 0, f = 1.0 MHz
ton
VCC = 10 V, VBE(off) = –2.7 V
IC = 50 mA
0.13
0.72
1.22
µs
Storage temperature
Fall time
tstg
IB1 = −IB2 = 1 mA
µs
toff
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16151EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SC3622, 3622A
hFE CLASSIFICATION
Marking
hFE1
L
K
1000 to 2000
1600 to 3200
2
Data Sheet D16151EJ1V0DS
2SC3622, 3622A
TYPICAL CHARACTERISTICS (Ta = 25°C)
3
Data Sheet D16151EJ1V0DS
2SC3622, 3622A
4
Data Sheet D16151EJ1V0DS
2SC3622, 3622A
[MEMO]
5
Data Sheet D16151EJ1V0DS
2SC3622, 3622A
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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patents, copyrights or other intellectual property rights of NEC or others.
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•
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 00. 4
相关型号：
2SC3622-L-A
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN
NEC
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