2SC4093-T1RBH [NEC]
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,;
| 型号： | 2SC4093-T1RBH |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, |
| 文件： | 总8页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
PACKAGE DIMENSIONS
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
(Units: mm)
+0.2
−0.3
+0.2
−0.1
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
2.8
1.5
FEATURES
•
Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz
•
High Power Gains
S21e 2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz
5°
5°
5°
ORDERING INFORMATION
PART
5°
QUANTITY
NUMBER
PACKING STYLE
2SC4093-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
PIN CONNECTIONS
1. Collector
2. Emitter
of the tape.
3. Base
4. Emitter
2SC4093-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
20
12
V
V
3.0
V
100
mA
mW
C
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
200
Tj
150
Tstg
65 to +150
C
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
©
1991
2SC4093
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
ICBO
IEBO
MIN.
TYP.
MAX.
1.0
UNIT
A
TEST CONDITIONS
VCB = 10 V, IE = 0
1.0
A
VEB = 10 V, IC = 0
hFE
50
120
7.0
0.6
13
250
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Noise Figure
fT
GHz
pF
Cre
0.95
2.0
2
S21e
11
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF
1.1
dB
Classification of hFE
Rank
Marking
Range
R26/RBF *
R26
R27/RBG *
R28/RBH *
R28
R27
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
hEF Test Condtitions: VCE = 10 V, IC = 20 mA
2
2SC4093
TYPICAL CHARACTERISTICS (TA = 25 C)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
f = 1.0 GHz
Free Air
2
1
200
0.5
100
0.2
0.1
0
50
100
150
1
2
5
10
20
TA-Ambient Temperature-°C
VCB-Collector to Base Voltage-V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
20
10
0
200
100
50
VCE = 10 V
VCE = 10 V
f = 1.0 GHz
20
10
0.5
1
2
5
10
20
50
0.5
1
5
10
50
IC-Collector Current-mA
IC-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
20
10
5
30
VCE = 10 V
IC = 20 mA
VCE = 10 V
Gmax
20
|S21e|2
2
10
0
1
0.6
1
0.1
0.2
0.5
1.0
2.0
2
5
10
20
40
f-Frequency-GHz
IC-Collector Current-mA
3
2SC4093
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
5
4
3
2
VCE = 10 V
f = 1.0 GHz
1
0
0.5
1
5
10
50 70
IC-Collector Current-mA
S-PARAMETER
VCE =10 V, IC = 5 mA, ZO = 50
f (MHz)
200
S11
S11
76.5
S21
S21
129.6
105.6
92.2
80.8
71.9
63.1
55.2
48.5
41.9
36.4
S12
S12
47.2
43.2
38.6
40.5
40.5
44.3
45.6
44.8
49.3
47.3
S22
S22
28.1
34.9
37.7
39.8
41.6
45.4
49.4
56.1
61.8
68.0
0.730
0.583
0.522
0.518
0.519
0.539
0.552
0.555
0.570
0.582
11.712
7.379
5.551
4.026
3.406
2.744
2.512
2.122
2.028
1.740
0.048
0.056
0.072
0.072
0.088
0.089
0.106
0.111
0.134
0.135
0.772
0.600
0.526
0.471
0.441
0.428
0.406
0.388
0.380
0.367
400
118.8
146.2
166.5
178.3
166.6
157.4
149.0
140.9
134.0
600
800
1000
1200
1400
1600
1800
2000
VCE = 10 V, IC = 20 mA, ZO = 50
f (MHz)
200
S11
S11
114.9
153.0
172.8
173.4
162.6
154.7
147.7
141.2
133.9
128.7
S21
19.635
10.412
7.454
5.318
4.450
3.571
3.253
2.737
2.618
2.237
S21
111.0
93.3
84.4
75.5
68.8
61.4
54.6
49.0
43.0
38.4
S12
S12
46.1
58.1
55.6
61.1
58.2
58.7
55.3
53.1
52.1
48.4
S22
S22
42.5
41.2
41.0
42.5
43.2
47.8
53.0
62.2
67.4
75.5
0.454
0.395
0.384
0.408
0.420
0.442
0.455
0.468
0.486
0.502
0.033
0.041
0.060
0.073
0.094
0.103
0.127
0.137
0.165
0.170
0.497
0.359
0.315
0.283
0.256
0.247
0.227
0.212
0.198
0.186
400
600
800
1000
1200
1400
1600
1800
2000
4
2SC4093
S-PARAMETER
S
V
11e, S22e-FREQUENCY
CE = 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
1
0.6
2
0.2
2.0 GHz
5
S11e
0
IC = 20 mA
2.0 GHz
S22e
I
C
= 5 mA
−0.2
I
C
= 20 mA
0.2 GHz
0.2 GHz
−5
IC = 5 mA
−2
−0.6
−1
S
V
21e-FREQUENCY
CE = 10 V
S
V
12e-FREQUENCY
CE = 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
freq. = 0.2 to 2 GHz (Step 200 MHz)
90
90
120
120
60
60
S12e
IC = 20 mA
2.0 GHz
= 5 mA
I
C
= 5 mA
0.2 GHz
150
30
150
I
C
= 20 mA
30
S
21e
I
C
0.2 GHz
0.04 0.08 0.12 0.16 0.2
2.0 GHz
2.0 GHz
180
0
180
0
0
4
8
12
16 20
0
S21
S21
−150
−30
−150
−30
−60
−60
−120
−120
−90
−90
5
2SC4093
[MEMO]
6
2SC4093
[MEMO]
7
2SC4093
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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