2SC4228-R44 [NEC]

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD, SC-70, 3 PIN;


型号：	2SC4228-R44
厂家：	NEC
描述：	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD, SC-70, 3 PIN
文件：	总7页 (文件大小：105K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4228

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN SUPER MINIMOLD

DESCRIPTION

The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

package.

FEATURES

•

Low noise : NF = 1.9 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz

High gain : S^21e²= 7.5 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz

3-pin super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4228

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

2SC4228-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

Tstg

−65 to +150

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10452EJ01V0DS (1st edition)

(Previous No. P10372EJ2V0DS00)

The mark shows major revised points.

Date Published December 2003 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 1993, 2003

2SC4228

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

ICBO

IEBO

VCB = 10 V, IE = 0 mA

−

1.0

250

µA

−

VEB = 1 V, IC = 0 mA

VCE = 3 V, IC = 5 mA

Note 1

hFE

100

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

VCE = 3 V, IC = 5 mA, f = 2 GHz

5.5

−

8.0

7.5

1.9

0.3

–

GHz

S21e²VCE = 3 V, IC = 5 mA, f = 2 GHz

−

VCE = 3 V, IC = 5 mA, f = 2 GHz

VCB = 3 V, IE = 0 mA, f = 1 MHz

3.2

0.7

Note 2

Reverse Transfer Capacitance

Cre

−

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

R43

R44

R45

Marking

hFE Value

50 to 100

80 to 160

125 to 250

Data Sheet PU10452EJ01V0DS

2SC4228

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

250

200

150

100

f = 1 MHz

Free Air

0.5

0.2

0.1

100

125

(˚C)

150

Ambient Temperature T

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

VCE = 3 V

0.5

Base to Emitter Voltage VBE (V)

Collector to Emitter Voltage VCE (V)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

200

100

VCE = 3 V

CE = 3 V

f = 2 GHz

0.5

(mA)

Collector Current I

Collector Current I (mA)

Remark The graphs indicate nominal characteristics.

Data Sheet PU10452EJ01V0DS

2SC4228

INSERTION POWER GAIN

vs. FREQUENCY

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

CE = 3 V

f = 2 GHz

IC = 5 mA

0.5

0.1

0.2

0.5

Frequency f (GHz)

Collector Current I (mA)

NOISE FIGURE vs.

COLLECTOR CURRENT

CE = 3 V

f = 2 GHz

0.5

Collector Current I (mA)

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/

Data Sheet PU10452EJ01V0DS

2SC4228

PACKAGE DIMENSIONS

3-PIN SUPER MINIMOLD (UNIT: mm)

2.1 0.1

1.25 0.1

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

(EIAJ : SC-70)

Data Sheet PU10452EJ01V0DS

2SC4228

•

The information in this document is current as of December, 2003. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

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liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

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(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4-0110

Data Sheet PU10452EJ01V0DS

2SC4228

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

http://www.ncsd.necel.com/

E-mail: salesinfo@ml.ncsd.necel.com (sales and general)

techinfo@ml.ncsd.necel.com (technical)

5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)

TEL: +852-3107-7303

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California Eastern Laboratories, Inc.

TEL: +1-408-988-3500 FAX: +1-408-988-0279

http://www.cel.com/

0310

2SC4228-R44 [NEC]

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