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NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
+0.1
–0.05
0.1
0.3 ± 0.05
FEATURES
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = 50 V
3
0 to 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
2
1
Collector to Base Voltage
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT
60
50
V
V
+0.1
0.2
–0
Collector to Emitter Voltage
Emitter to Base Voltage
0.6
0.5
0.5
0.75 ± 0.05
5.0
100
200
200
150
V
1.0
1.6 ± 0.1
Collector Current (DC)
mA
mA
mW
°C
Collector Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
Junction Temperature
1: Emitter
2: Base
3: Collector
Tj
Storage Temperature Range
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
Tstg
–55 to + 150 °C
2. When mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Collector Cut-off Current
ICBO
VCB = 60 V, IE = 0
100
100
nA
nA
−
Emitter Cut-off Current
IEBO
VEB = 5.0 V, IC = 0
Note
hFE1
VCE = 6.0 V, IC = 0.1 mA
VCE = 6.0 V, IC = 1.0 mA
VCE = 6.0 V, IC = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 100 mA, IB = 10 mA
VCE = 6.0 V, IE = −10 mA
VCE = 6.0 V, IE = 0, f = 1.0 MHz
50
90
DC Current Gain
hFE2
200
0.62
0.15
0.86
250
3.0
600
−
Note
VBE
V
Base to Emitter Voltage
Note
VCE(sat)
VBE(sat)
fT
0.3
1.0
V
Collector Saturation Voltage
Note
V
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
150
MHz
pF
Cob
4.0
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSFICATION
Marking
hFE2
L4
L5
L6
L7
300 to 600
90 to 180
135 to 270
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published July 2001 NS CP(K)
Printed in Japan
D15616EJ1V0DS00 (1st edition)
2001
©
2SC4783
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
300
V
CE = 6.0 V
Free air
30
10
3
250
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
200
150
˚C
˚C
25
1
= 75
˚C
A
T
–25
0.3
0.1
100
2
50
0.03
0.01
0
25
50
75
100
125
150
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
A - Ambient Temperature - ˚C
V
BE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
100
10
45
1.0
0.9
0.8
0.7
0.6
0.5
40
35
30
25
80
60
8
6
0.4
0.3
20
15
10
0.2
40
20
4
2
I = 0.1 mA
B
I
B
= 5.0 µA
0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
V
CE - Collector to Emitter Voltage - V
V
CE - Collector to Emitter Voltage - V
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
10
1
f = 1.0 MHz
V
BE(sat)
0.5
5
0.2
0.1
2
1
0.05
0.5
V
CE(sat)
0.02
0.01
0.2
0.1
.
I
C
= 10
50
I
B
1
2
5
10
20
100
1
2
5
10
20
50
100
I
C
- Collector Current - mA
V
CB - Collector to Base Voltage - V
2
Data Sheet D15616EJ1V0DS
2SC4783
DC CURRENT GAIN vs. COLLECTOR CURRENT
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
1000
500
V
CE = 6.0 V
T
A
= 75˚C
25˚C
500
−25˚C
V
CE = 6 V
1 V
200
100
50
200
100
50
20
10
20
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
I
C
- Collector Current - mA
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
1000
500
V
CE = 6 V
1 V
200
100
50
20
10
−1
−2
−5
−10
−20
−50 −100
I
E
- Emitter Current - mA
3
Data Sheet D15616EJ1V0DS
2SC4783
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
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M8E 00. 4
2SC4783-A 相关器件
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2SC4783-L4 | RENESAS | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, SC-75, 3 PIN | 获取价格 | |
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2SC4783-L7 | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 | |
2SC4783-L7-A | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 | |
2SC4783L4-T1-AT | RENESAS | TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),SC-75 | 获取价格 | |
2SC4783L6-T1-A | RENESAS | TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),SC-75 | 获取价格 | |
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