2SC5180-T1FB [NEC]
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4;
| 型号： | 2SC5180-T1FB |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
•
Low current consumption and high gain
S21e2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
S21e2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
4-pin super minimold Package
•
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5180
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
2SC5180-T1
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
5
V
V
3
2
V
10
30
mA
mW
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
Tj
150
−65 to +150
Tstg
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10517EJ01V0DS (1st edition)
(Previous No. P12104EJ2V0DS00)
Date Published August 2004 CP(K)
The mark shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1994 , 2004
Printed in Japan
2SC5180
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
−
−
−
−
−
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
100
100
140
nA
nA
−
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 7 mA
Note 1
hFE
70
RF Characteristics
−
−
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
fT
fT
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
VCE = 1 V, IC = 5 mA, f = 2.0 GHz
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
VCE = 1 V, IC = 5 mA, f = 2.0 GHz
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
VCB = 2 V, IE = 0 mA, f = 1.0 MHz
12
10
10
8.5
−
15.5
13
GHz
GHz
dB
S21e2
S21e2
NF
−
12
−
11
dB
1.5
1.5
0.3
2.0
2.0
0.5
dB
−
Noise Figure (2)
NF
dB
Note 2
−
Reverse Transfer Capacitance
Cre
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
T84
Marking
hFE Value
70 to 140
2
Data Sheet PU10517EJ01V0DS
2SC5180
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
200
100
0.5
0.4
0.3
0.2
f = 1 MHz
Free Air
30 mW
0.1
0
0
50
100
150
1.0
2.0
3.0
4.0
5.0
Ambient Temperature T
A
(˚C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
50
40
30
20
10
25
20
15
10
5
VCE = 2 V
200
180
160
140
120
µ
µ
µ
µ
µ
A
A
A
A
A
100
µ
A
80
60
40
µ
A
A
A
µ
µ
IB = 20 A
µ
0
0.5
1.0
0
1.0
2.0
3.0
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
500
18
16
14
12
10
8
f = 2 GHz
V
CE = 2 V
200
100
50
V
CE = 2 V
V
CE = 1 V
VCE = 1 V
20
10
6
4
1
1
2
5
10
20
(mA)
50
100
2
5
10
Collector Current I
C
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
3
Data Sheet PU10517EJ01V0DS
2SC5180
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
14
12
10
8
4
3
2
f = 2 GHz
f = 2 GHz
VCE = 2 V
VCE = 1 V
VCE = 1 V
VCE = 2 V
1
0
6
4
1
2
10
1
2
5
10
20
100
5
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10517EJ01V0DS
2SC5180
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
2.1 0.2
1.25 0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
5
Data Sheet PU10517EJ01V0DS
2SC5180
•
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
6
Data Sheet PU10517EJ01V0DS
2SC5180
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0406
相关型号：
2SC5180-T1FB-A
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4
NEC
2SC5180-T2FB
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4
NEC
2SC5180-T2FB-A
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4
NEC
2SC5180FB
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-4
NEC
2SC5181
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC
2SC5181-FB-A
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC
2SC5181-T1
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC
2SC5181-T1FB-A
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC
©2020 ICPDF网 联系我们和版权申明