2SD2161-L [NEC]
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, ISOLATED TO-220, FULL PACK-3;
| 型号： | 2SD2161-L |
| 厂家： | 
NEC |
| 描述： | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, ISOLATED TO-220, FULL PACK-3 |
| 文件： | 总6页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
ORDERING INFORMATION
The 2SD2161 is a Darlington power transistor that can directly drive
from the IC output. This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
Ordering Name
2SD2161
Package
Isolated TO-220
In addition,
a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
(Isolated TO-220)
FEATURES
• High hFE due to Darlington connection
hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
VCBO
Conditions
Ratings
100
100
7.0
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
VCEO
V
VEBO
V
5.0
IC(DC)
A
PW ≤ 300 µs,
10
IC(pulse)
A
duty cycle ≤ 10%
Base current (DC)
IB(DC)
PT
0.5
20
A
TC = 25°C
TA = 25°C
Total power dissipation
W
W
°C
°C
2.0
Junction temperature
Storage temperature
Tj
150
−55 to +150
Tstg
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14864EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SD2161
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 100 V, IE = 0 A
MIN.
TYP.
MAX.
1.0
Unit
µA
VCE = 2.0 V, IC = 2.0 ANote
VCE = 2.0 V, IC = 4.0 ANote
IC = 2.0 A, IB = 2.0 mANote
IC = 2.0 A, IB = 2.0 mANote
VCE = 5.0 V, IC = 0.5 A
2,000
500
8,000
20,000
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
1.5
2.0
V
V
30
35
MHz
pF
µs
Cob
VCB = 10 V, IE = 0 A, f = 1.0 MHz
IC = 2.0 A, RL = 25 Ω,
IB1 = −IB2 = 2.0 mA, VCC ≅ 50 V
Refer to the test circuit.
ton
1.0
3.5
1.2
µs
Storage time
tstg
µs
Fall time
tf
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE1
M
L
K
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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2
Data Sheet D14864EJ2V0DS
2SD2161
TYPICAL CHARACTERISTICS (TA = 25°C)
Case Temperature TC (°C)
Case Temperature TC (°C)
Single pulse
Collector to Emitter Voltage VCE (V)
Without
heatsink
Rth(j – a)
With infinite heatsink
Pulse Width PW (s)
3
Data Sheet D14864EJ2V0DS
2SD2161
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Data Sheet D14864EJ2V0DS
2SD2161
PACKAGE DRAWING (UNIT: mm)
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Data Sheet D14864EJ2V0DS
2SD2161
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 00. 4
相关型号：
2SD2161-M
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, ISOLATED TO-220, FULL PACK-3
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