2SD2163-L-AZ [NEC]
暂无描述;型号: | 2SD2163-L-AZ |
厂家: | NEC |
描述: | 暂无描述 晶体 开关 放大器 晶体管 功率放大器 |
文件: | 总4页 (文件大小:99K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
PACKAGE DRAWING (UNIT: mm)
The 2SD2163 is a mold power transistor developed for low-
speed high-current switching. This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
• Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)
Electrode Connection
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
150
VCEO
100
V
VEBO
8.0
V
IC(DC)
10
A
IC(pulse)*
IB(DC)
20
1.0
A
A
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
PT (Tc = 25°C)
PT (Ta = 25°C)
Tj
30
W
W
°C
°C
2.0
150
Tstg
−55 to +150
*
PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 100 V, IE = 0
VCE = 2.0 V, IC = 10 A
MIN.
TYP.
MAX.
10
Unit
µA
hFE**
1,000
6,000
1.1
30,000
1.5
Collector saturation voltage VCE(sat)** IC = 10 A, IB = 25 mA
V
V
Base saturation voltage
Turn-on time
VBE(sat)**
IC = 10 A, IB = 25 mA
1.8
2.0
ton
tstg
tf
IC = 10 A, IB1 = −IB2 = 25 mA
RL = 5.0 Ω, VCC ≅ 50 V
Refer to the test circuit.
1.0
µs
µs
µs
Storage time
5.0
Fall time
2.0
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE
M
L
K
J
1,000 to 3,000
2,000 to 5,000
4,000 to 10,000
8,000 to 30,000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SD2163
TYPICAL CHARACTERISTICS (Ta = 25°C)
Case Temperature TC ( C)
°
Collector to Emitter Voltage VCE (V)
Ta = 25°C
(without heatsink)
(with infinite heatsink)
Case Temperature TC ( C)
Pulse Width PW (s)
°
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
2
Data Sheet D16139EJ1V0DS
2SD2163
Collector Current IC (A)
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
3
Data Sheet D16139EJ1V0DS
2SD2163
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
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•
•
•
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M8E 00. 4
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