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2SJ199 [NEC]

P-CHANNEL MOS FET FOR SWITCHING; P沟道MOS FET切换
2SJ199
元器件型号： 2SJ199
生产厂家： NEC    NEC
描述和应用：

P-CHANNEL MOS FET FOR SWITCHING
P沟道MOS FET切换

晶体 小信号场效应晶体管 开关
PDF文件： 总6页 (文件大小：310K)
下载文档：  下载PDF数据表文档文件
型号参数：2SJ199参数
 查看货源

2SJ199-T2

 Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD, SC-62, 3 PIN

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0 NEC

2SJ199-T2

 TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,1A I(D),SOT-89

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0 RENESAS

2SJ199-T2-AY

 TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,1A I(D),SOT-89

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0 RENESAS

2SJ200

 High Power Amplifier Application

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318 TOSHIBA

2SJ200

 P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

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404 TOSHIBA

2SJ200_07

 High Power Amplifier Application

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33 TOSHIBA

2SJ200O

 TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR

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35 ETC

2SJ200-O

 TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power

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0 TOSHIBA

2SJ200Y

 TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR

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21 ETC

2SJ200-Y

 暂无描述

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0 TOSHIBA

2SJ201

 P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

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329 TOSHIBA

2SJ201

 High-Power Amplifier Application

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168 TOSHIBA

2SJ201

 High-Power Amplifier Application

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232 TOSHIBA

2SJ201_07

 High-Power Amplifier Application

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35 TOSHIBA

2SJ201_09

 High-Power Amplifier Application

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43 TOSHIBA
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